BSI IMAGE SENSOR PACKAGE WITH VARIABLE-HEIGHT SILICON FOR EVEN RECEPTION OF DIFFERENT WAVELENGTHS
    58.
    发明申请
    BSI IMAGE SENSOR PACKAGE WITH VARIABLE-HEIGHT SILICON FOR EVEN RECEPTION OF DIFFERENT WAVELENGTHS 有权
    BSI图像传感器包含可变高度硅,以便接收不同波长

    公开(公告)号:US20120199926A1

    公开(公告)日:2012-08-09

    申请号:US13114243

    申请日:2011-05-24

    摘要: A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semiconductor region has a first thickness between the first light sensing element and the rear face and a second thickness between the second light sensing element and the rear face such that the first and second light sensing elements receive light of substantially the same intensity. A dielectric region is provided at least substantially filling a space of the semiconductor region adjacent at least one of the light sensing elements. The dielectric region may include at least one light guide.

    摘要翻译: 提供了一种用于背面照明的微电子图像传感器组件及其制造方法。 该组件包括具有在正面暴露的触点的微电子元件和被布置成通过后表面接收不同波长的光的光感测元件。 半导体区域在第一光感测元件和后表面之间具有第一厚度,并且在第二光感测元件和后表面之间具有第二厚度,使得第一和第二光感测元件接收基本上相同强度的光。 提供至少基本上填充与至少一个光感测元件相邻的半导体区域的空间的电介质区域。 电介质区域可以包括至少一个光导。

    BSI IMAGE SENSOR PACKAGE WITH EMBEDDED ABSORBER FOR EVEN RECEPTION OF DIFFERENT WAVELENGTHS
    59.
    发明申请
    BSI IMAGE SENSOR PACKAGE WITH EMBEDDED ABSORBER FOR EVEN RECEPTION OF DIFFERENT WAVELENGTHS 有权
    具有嵌入式吸收器的BSI图像传感器包,用于接收不同波长

    公开(公告)号:US20120199925A1

    公开(公告)日:2012-08-09

    申请号:US13111258

    申请日:2011-05-19

    IPC分类号: H01L31/0232 H01L31/18

    摘要: A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semiconductor region has an opening overlying at least one of first and second light sensing elements, the semiconductor region having a first thickness between the first light sensing element and the rear face and a second thickness between the second light sensing element and the rear face. A light-absorbing material overlies the semiconductor region within the opening above at least one of the light sensing elements such that the first and second light sensing elements receive light of substantially the same intensity.

    摘要翻译: 提供了一种用于背面照明的微电子图像传感器组件及其制造方法。 该组件包括具有在正面暴露的触点的微电子元件和被布置成通过后表面接收不同波长的光的光感测元件。 半导体区域具有覆盖第一和第二光感测元件中的至少一个的开口,该半导体区域在第一光感测元件和后表面之间具有第一厚度,在第二光感测元件与后表面之间具有第二厚度。 光吸收材料覆盖至少一个感光元件之内的开口内的半导体区域,使得第一和第二光感测元件接收基本上相同强度的光。