摘要:
A semiconductor device having a flip-chip package and a method for fabricating the same are provided. A flip-chip package after being tested to be functionally workable is mounted on a carrier and is electrically connected to the carrier by a plurality of first conductive elements, the flip-chip package having a first chip mounted on a substrate in a flip-chip manner. At least a second chip is mounted on the flip-chip package and is electrically connected to the carrier by a plurality of second conductive elements. An encapsulant is formed on the carrier for encapsulating the flip-chip package and the second chip. A plurality of solder balls are implanted on a bottom surface of the carrier, such that the first and second chips can be electrically connected to an external device via the solder balls. The above arrangement can effectively improve the yield of a fabricated product and reduce packaging costs.
摘要:
A semiconductor package and a fabrication method thereof are provided in which a chip is mounted on a substrate, and a dielectric layer is applied over the substrate and chip, with bond fingers formed on the substrate and electric contacts formed on the chip being exposed outside. A metal layer is formed over the dielectric layer and the exposed bond fingers and electric contacts, and patterned to form a plurality of conductive traces that electrically connect the electric contacts of the chip to the bond fingers of the substrate. The conductive traces replace conventional wire bonding technology and thus eliminate the occurrence of wire sweep or short circuits in fabrication processes. Therefore, a low profile chip with a reduced pitch between adjacent electric contacts can be used without being limited to feasibility of the wire bonding technology.
摘要:
A substrate and a fabrication method thereof are proposed, with at least a check point being formed on the substrate. Prior to wire bonding and/or molding processes, cleanness of the substrate (cleaned by plasma) is determined according to color variation of the check point, so as to allow only cleaned and contamination-free substrates to be subsequently formed with bonding wires and encapsulants thereon. Thereby, qualities of wire-bonded electrical connection and encapsulant adhesion for the substrate can be assured, which helps prevent the occurrence of delamination between the encapsulant and the substrate. Moreover, the check point formed on the substrate is made during general substrate fabrication by using current equipment and technique, and in a manner as not to interfere with trace routability on the substrate; thereby, costs and complexity of substrate fabrication would not undesirably increased.
摘要:
A method of fabricating BGA (Ball Grid Array) packages is proposed, which utilizes a specially-designed carrier to serve as an auxiliary tool to package semiconductor chips on substrates. The carrier is formed with a plurality of cavities respective for receiving a substrate and in communication with an injection gate, such that no injection gate is required on the substrate, thereby not restricting the trace routability on the substrate. Moreover, a two-piece type of mold is allowed being used to form a number of encapsulation bodies at one time, making the fabrication more productive and cost-effective. Furthermore, the proposed BGA fabrication method can be implemented without having to provide an air outlet in the substrate but allows the resulted encapsulation body to be free of voids to assure the quality of the packages. The proposed BGA fabrication method is therefore more advantageous to use than the prior art.
摘要:
Conventional configuration of a lead frame, particularly a lead frame in a Lead-on-Chip package, is substituted by one having inward ends of leads thereof arranged in unprecedented ways, resulting in bigger gap between any two adjacent inward ends of inner leads, leading to bigger Inner Lead Pitch of a lead frame in which the space available is inherently limited. It is by the new configuration that an IC packaging process can be immunized against the difficulty resulting from too small Inner Lead Pitch of a lead frame, and the bottle neck in the process of packaging an IC subject to the tendency of minimizing the size of an IC can thus be overcome.
摘要:
A semiconductor packaging technology is proposed for the fabrication of a chip-on-chip (COC) based multi-chip module (MCM) with molded underfill. The proposed semiconductor packaging technology is characterized by the provision of a side gap of an empirically-predetermined width between the overlying chips mounted through COC technology over an underlying chip to serve as an air vent during molding process. This allows the injected molding material to flow freely into the flip-chip undergaps during molding process. In actual application, the exact width of the side gap is empirically predetermined through molded-underfill simulation experiments to find the optimal value. Based on experimental data, it is found that this side gap width should be equal to or less than 0.3 mm to allow optimal underfill effect. The optimal value for this side gap width may be varied for different package specifications.
摘要:
A method of fabricating a FCBGA (Flip-Chip Bal-Grid-Array) package with molded underfill is proposed, which is characterized by the forming of a mold-buffering opening in the solder mask at the exit of the vent hole in the substrate, wherein the mold-buffering opening is dimensioned to be greater in width than the inside diameter of the vent hole, so that during molding process when the encapsulation material infiltrates to the exit of the vent hole, it can be confined within the mold-buffering opening, thereby preventing it from flashing to nearby solder-ball pads. Since there would substantially exist no mold flash over the exposed surface of the solder mask and the solder-ball pads, the resulted FCBGA package would be assured in the quality of its outer appearance and the bonding between the solder-ball pads and the subsequently attached solder balls thereon.
摘要:
A method is proposed for bonding a BGA (Ball Grid Array) package to a circuit board without causing the collapsing of the BGA package against the circuit board. The proposed method is characterized in the use of two groups of solder balls of different reflow collapse degrees, which are arranged in an interspersed manner among each other in the ball grid array. In one embodiment, the first group of solder balls are homogenously made of a solder material of a specific melting point; and the second group of solder balls each include an outer portion and a core portion, with the outer portion having substantially the same melting point as the first group of solder balls, and the core portion being greater in melting point than the outer portion. In another embodiment, the second group of solder balls are greater in melting point than the first group of solder balls. During the solder-reflow process, when the first group of solder balls are entirely melted, the second group of solder balls are only partly melted or entirely unmelted and thus are capable of providing a solid support to the BGA package to prevent the collapsing of BGA package against circuit board.
摘要:
A semiconductor die includes a crack stopper on an under-bump metallization (UBM) layer. The crack stopper is in the shape of hollow cylinder with at least two openings.
摘要:
A die has a first surface, a second surface opposite the first surface, and sidewalls includes a first portion and a second portion, wherein the first portion is closer to the first surface than the second portion. A fillet contacts the first portion of sidewalls of the die and encircles the die. A work piece is bonded to the die through solder bumps, with the second surface facing the work piece. A first underfill is filled a gap between the die and the work piece, wherein the first underfill contacts the fillet, and wherein the first underfill and the fillet are formed of different materials.