Method for providing pinhole free dielectric layers
    1.
    发明授权
    Method for providing pinhole free dielectric layers 失效
    提供无针孔电介质层的方法

    公开(公告)号:US4519851A

    公开(公告)日:1985-05-28

    申请号:US621335

    申请日:1984-06-15

    摘要: A method is taught for repairing pinholes in dielectric layers and thereby avoiding metal shorts. The method is applied after the dielectric has been deposited on a base of conductive metallurgy and involves heating the metal-dielectric layers in an oxygen ambient and thereby oxidizing any exposed metal. The metal-oxide formed in the pinhole effectively insulates the underlying metal from a subsequently deposited metal; and, hence acts to prevent metal-to-metal shorts.

    摘要翻译: 教导了一种修复电介质层中针孔的方法,从而避免金属短路。 在将电介质沉积在导电冶金基底上之后应用该方法,并且涉及在氧环境中加热金属 - 电介质层,从而氧化任何暴露的金属。 形成在针孔中的金属氧化物有效地将下面的金属与随后沉积的金属绝缘; 并因此起到防止金属对金属短路的作用。