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1.发明授权Semiconductor device, manufacturing method of semiconductor device, and power source device 有权半导体装置，半导体装置的制造方法以及电源装置公开(公告)号：US08728867B2
公开(公告)日：2014-05-20
申请号：US13355792
申请日：2012-01-23
IPC分类号： H01L21/44
CPC分类号： H01L23/48 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05005 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05541 , H01L2224/05573 , H01L2224/05644 , H01L2224/0603 , H01L2224/26175 , H01L2224/2745 , H01L2224/2746 , H01L2224/29019 , H01L2224/29036 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/2912 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29499 , H01L2224/32225 , H01L2224/32245 , H01L2224/325 , H01L2224/32502 , H01L2224/32506 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48245 , H01L2224/48247 , H01L2224/48644 , H01L2224/48744 , H01L2224/4903 , H01L2224/73265 , H01L2224/83193 , H01L2224/83194 , H01L2224/83801 , H01L2224/83851 , H01L2924/00013 , H01L2924/01029 , H01L2924/01322 , H01L2924/13064 , H01L2924/15311 , H01L2924/181 , H01L2224/83439 , H01L2924/00014 , H01L2924/00012 , H01L2924/0132 , H01L2924/01047 , H01L2924/0105 , H01L2924/0665 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area.
摘要翻译： 半导体器件的制造包括在支撑板的半导体芯片安装区域和半导体芯片的后表面中的一个上形成具有第一金属的层和具有第二金属的层; 在第一金属层和第二金属层之间形成与第一金属层和第二金属层之间的一个区域对应的区域的另一层 的半导体芯片安装区域和半导体芯片的背面; 以及在将所述半导体芯片定位在所述半导体芯片安装区域中之后，形成与所述第一金属和所述第二金属合金的层，以将半导体芯片与半导体芯片安装区域接合。
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2.发明申请SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND POWER SOURCE DEVICE 有权半导体器件，半导体器件的制造方法和电源器件公开(公告)号：US20120211901A1
公开(公告)日：2012-08-23
申请号：US13355792
申请日：2012-01-23
CPC分类号： H01L23/48 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05005 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05541 , H01L2224/05573 , H01L2224/05644 , H01L2224/0603 , H01L2224/26175 , H01L2224/2745 , H01L2224/2746 , H01L2224/29019 , H01L2224/29036 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/2912 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29499 , H01L2224/32225 , H01L2224/32245 , H01L2224/325 , H01L2224/32502 , H01L2224/32506 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48245 , H01L2224/48247 , H01L2224/48644 , H01L2224/48744 , H01L2224/4903 , H01L2224/73265 , H01L2224/83193 , H01L2224/83194 , H01L2224/83801 , H01L2224/83851 , H01L2924/00013 , H01L2924/01029 , H01L2924/01322 , H01L2924/13064 , H01L2924/15311 , H01L2924/181 , H01L2224/83439 , H01L2924/00014 , H01L2924/00012 , H01L2924/0132 , H01L2924/01047 , H01L2924/0105 , H01L2924/0665 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area.
摘要翻译： 半导体器件的制造包括在支撑板的半导体芯片安装区域和半导体芯片的后表面中的一个上形成具有第一金属的层和具有第二金属的层; 在第一金属层和第二金属层之间形成与第一金属层和第二金属层之间的一个区域对应的区域的另一层 的半导体芯片安装区域和半导体芯片的背面; 以及在将所述半导体芯片定位在所述半导体芯片安装区域中之后，形成与所述第一金属和所述第二金属合金的层，以将半导体芯片与半导体芯片安装区域接合。
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公开(公告)号：US08492784B2
公开(公告)日：2013-07-23
申请号：US13331090
申请日：2011-12-20
IPC分类号： H01L33/00
CPC分类号： H01L23/3135 , H01L23/3121 , H01L23/3142 , H01L24/45 , H01L24/48 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/8592 , H01L2924/00014 , H01L2924/09701 , H01L2924/13064 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： A semiconductor device includes: a semiconductor chip including a nitride semiconductor layered structure including a carrier transit layer and a carrier supply layer; a first resin layer on the semiconductor chip, the first resin layer including a coupling agent; a second resin layer on the first resin layer, the second resin layer including a surfactant; and a sealing resin layer to seal the semiconductor chip with the first resin layer and the second resin layer.
摘要翻译： 半导体器件包括：半导体芯片，其包括具有载流子迁移层和载流子供给层的氮化物半导体层叠结构; 在所述半导体芯片上的第一树脂层，所述第一树脂层包含偶联剂; 在第一树脂层上的第二树脂层，第二树脂层包括表面活性剂; 以及用第一树脂层和第二树脂层密封半导体芯片的密封树脂层。
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公开(公告)号：US20120199991A1
公开(公告)日：2012-08-09
申请号：US13331090
申请日：2011-12-20
CPC分类号： H01L23/3135 , H01L23/3121 , H01L23/3142 , H01L24/45 , H01L24/48 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/8592 , H01L2924/00014 , H01L2924/09701 , H01L2924/13064 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： A semiconductor device includes: a semiconductor chip including a nitride semiconductor layered structure including a carrier transit layer and a carrier supply layer; a first resin layer on the semiconductor chip, the first resin layer including a coupling agent; a second resin layer on the first resin layer, the second resin layer including a surfactant; and a sealing resin layer to seal the semiconductor chip with the first resin layer and the second resin layer.
摘要翻译： 半导体器件包括：半导体芯片，其包括具有载流子迁移层和载流子供给层的氮化物半导体层叠结构; 在所述半导体芯片上的第一树脂层，所述第一树脂层包含偶联剂; 在第一树脂层上的第二树脂层，第二树脂层包括表面活性剂; 以及用第一树脂层和第二树脂层密封半导体芯片的密封树脂层。
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5.发明申请公开(公告)号：US20120217626A1
公开(公告)日：2012-08-30
申请号：US13353666
申请日：2012-01-19
IPC分类号： H01L23/495 , H01L21/58
CPC分类号： H03F1/3247 , H01L21/4825 , H01L23/49524 , H01L23/49558 , H01L23/49562 , H01L24/36 , H01L24/40 , H01L24/84 , H01L2224/40245 , H01L2224/83801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12032 , H01L2924/1306 , H01L2924/13064 , H01L2924/181 , H03F3/189 , H03F3/24 , H03F2200/204 , H03F2200/451 , H01L2924/00 , H01L2924/00012 , H01L2224/37099 , H01L2224/84
摘要： A method for manufacturing a semiconductor device, includes: placing a seal layer including a connection conductive film on the surface so that the connection conductive film is in contact with an electrode of a semiconductor element and a lead; electrically coupling the electrode and the lead through the connection conductive film; and sealing the semiconductor element by the seal layer.
摘要翻译： 一种半导体器件的制造方法，其特征在于，包括：将具有连接导电膜的密封层放置在所述表面上，使得所述连接导电膜与半导体元件的电极和引线接触; 通过连接导电膜电连接电极和引线; 并通过密封层密封半导体元件。
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6.发明申请SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ELECTRONIC CIRCUIT 审中-公开半导体器件，制造半导体器件和电子电路的方法公开(公告)号：US20120211762A1
公开(公告)日：2012-08-23
申请号：US13334766
申请日：2011-12-22
IPC分类号： H01L29/778 , H01L21/56 , H01L23/48 , H01L29/20
CPC分类号： H01L29/7787 , H01L23/3107 , H01L23/4952 , H01L23/49562 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L29/41766 , H01L29/66462 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/0603 , H01L2224/45014 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/48599 , H01L2224/48699 , H01L2224/49 , H01L2224/8592 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/01073 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/1033 , H01L2924/10344 , H01L2924/1306 , H01L2924/13064 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/206
摘要： A semiconductor device includes: a semiconductor chip having an electrode; a lead corresponding to the electrode; a metal line coupling the electrode to the lead; a first resin portion covering a coupling portion between the metal line and the electrode and a coupling portion between the metal line and the lead; and a second resin portion covering the metal line, the first resin portion, and the semiconductor chip.
摘要翻译： 半导体器件包括：具有电极的半导体芯片; 对应于电极的引线; 将电极耦合到引线的金属线; 覆盖金属线和电极之间的耦合部分的第一树脂部分和金属线与引线之间的耦合部分; 以及覆盖金属线，第一树脂部分和半导体芯片的第二树脂部分。
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7.发明授权公开(公告)号：US08674520B2
公开(公告)日：2014-03-18
申请号：US13355805
申请日：2012-01-23
IPC分类号： H01L29/40
CPC分类号： H01L23/49513 , H01L23/3107 , H01L23/49562 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/29 , H01L2224/29076 , H01L2224/29101 , H01L2224/29111 , H01L2224/29147 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/4903 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/83101 , H01L2224/92247 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10329 , H01L2924/13064 , H01L2924/15738 , H01L2924/15747 , H01L2924/15763 , H01L2924/181 , H01L2924/00 , H01L2924/01022 , H01L2924/01028 , H01L2924/01046 , H01L2924/00012 , H01L2924/00014 , H01L2924/3512
摘要： A method for manufacturing a semiconductor device includes placing a sheet containing a fibrous material having at least one outer surface having a metal on a semiconductor chip-mounting region of a substrate; forming a bonding layer containing a fusible metal on the semiconductor chip-mounting region; placing a semiconductor chip on the semiconductor chip-mounting region; and bonding the semiconductor chip to the semiconductor chip-mounting region with the fusible metal-containing bonding layer by heating.
摘要翻译： 一种半导体器件的制造方法，其特征在于，在衬底的半导体芯片安装区域上放置含有具有至少一个具有金属的外表面的纤维材料的片材; 在半导体芯片安装区域上形成含有可熔金属的接合层; 将半导体芯片放置在半导体芯片安装区域上; 并且通过加热将半导体芯片与可熔融金属键合层接合到半导体芯片安装区域。
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8.发明授权Method for processing a base that includes connecting a first base to a second base 有权用于处理包括将第一基座连接到第二基座的基座的方法公开(公告)号：US07816180B2
公开(公告)日：2010-10-19
申请号：US12403252
申请日：2009-03-12
IPC分类号： H01L21/58
CPC分类号： H01L24/13 , H01L21/563 , H01L24/02 , H01L24/06 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05578 , H01L2224/06102 , H01L2224/1134 , H01L2224/1147 , H01L2224/1184 , H01L2224/13028 , H01L2224/13082 , H01L2224/13144 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/13664 , H01L2224/13669 , H01L2224/16106 , H01L2224/16225 , H01L2224/2784 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81191 , H01L2224/83121 , H01L2224/83191 , H01L2224/83856 , H01L2924/00 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/19041 , Y10T29/49126 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099
摘要： The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
摘要翻译： 本发明实现了一种高可靠性的半导体器件，其允许在低负载和低成本下形成具有均匀高度，平坦和平滑的金属端子并且以低损伤安装。 电极5和绝缘膜6均由具有固体特性的材料形成，并且在室温下不显示粘合性，并且在不低于第一温度的温度下显示粘附性，并且在不低于 第二温度高于第一温度。 半导体芯片1a的电极5和绝缘膜6的表面与硬质切削工具一样平坦化，如金刚石等。
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9.发明授权Method for processing a base that includes connecting a first base to a second base with an insulating film 有权用于处理基底的方法，其包括用绝缘膜将第一基底连接到第二基底公开(公告)号：US07811835B2
公开(公告)日：2010-10-12
申请号：US12403283
申请日：2009-03-12
IPC分类号： H01L21/58
CPC分类号： H01L24/13 , H01L21/563 , H01L24/02 , H01L24/06 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05578 , H01L2224/06102 , H01L2224/1134 , H01L2224/1147 , H01L2224/1184 , H01L2224/13028 , H01L2224/13082 , H01L2224/13144 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/13664 , H01L2224/13669 , H01L2224/16106 , H01L2224/16225 , H01L2224/2784 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81191 , H01L2224/83121 , H01L2224/83191 , H01L2224/83856 , H01L2924/00 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/19041 , Y10T29/49126 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099
摘要： The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
摘要翻译： 本发明实现了一种高可靠性的半导体器件，其允许在低负载和低成本下形成具有均匀高度，平坦和平滑的金属端子并且以低损伤安装。 电极5和绝缘膜6均由具有固体特性的材料形成，并且在室温下不显示粘合性，并且在不低于第一温度的温度下显示粘附性，并且在不低于 第二温度高于第一温度。 半导体芯片1a的电极5和绝缘膜6的表面与硬质切削工具一样平坦化，如金刚石等。
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公开(公告)号：US20090181497A1
公开(公告)日：2009-07-16
申请号：US12403283
申请日：2009-03-12
IPC分类号： H01L21/60
CPC分类号： H01L24/13 , H01L21/563 , H01L24/02 , H01L24/06 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05578 , H01L2224/06102 , H01L2224/1134 , H01L2224/1147 , H01L2224/1184 , H01L2224/13028 , H01L2224/13082 , H01L2224/13144 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/13664 , H01L2224/13669 , H01L2224/16106 , H01L2224/16225 , H01L2224/2784 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81191 , H01L2224/83121 , H01L2224/83191 , H01L2224/83856 , H01L2924/00 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/19041 , Y10T29/49126 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099
摘要： The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
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