摘要:
A semiconductor module according to the invention includes: an island formed of a conductive material; a plurality of leads disposed in vicinity of the island; a resin sealing body which is mounted on the island and disposed such that a back surface of a circuit board on which semiconductor elements is exposed upward; a sensor which is mounted on the back surface of the circuit board; and a thin metallic wire which electrically connects the circuit board with the leads. The island, the resin sealing body, the sensor, and parts of the leads are sealed by a second sealing resin.
摘要:
A semiconductor module according to the invention includes: an island formed of a conductive material; a plurality of leads disposed in vicinity of the island; a resin sealing body which is mounted on the island and disposed such that a back surface of a circuit board on which semiconductor elements is exposed upward; a sensor which is mounted on the back surface of the circuit board; and a thin metallic wire which electrically connects the circuit board with the leads. The island, the resin sealing body, the sensor, and parts of the leads are sealed by a second sealing resin.
摘要:
A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.
摘要:
A semiconductor device is provided wherein conductive paths 40, formed of crystal that grows better along the X-Y axis than along the Z axis, are embedded in an insulating resin 44, and the back surface of the conductive path 40 is exposed through the insulating resin 44 and sealed. With this arrangement, fractures of the conductive paths 40 embedded in the insulating resin 44 are suppressed.
摘要:
After a trench 54 is formed in a conductive foil 60, the circuit elements are mounted, and the insulating resin is applied on the conductive foil 60 as the support substrate. After being inverted, the conductive foil 60 is polished on the insulating resin 50 as the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive paths 51 and the circuit elements 52 are supported by the insulating resin 50, without the use of the support substrate. And the interconnects L1 to L3 requisite for the circuit are formed, and can be prevented from slipping because of the curved structure 59 and a visor 58.
摘要:
A method for fabricating a circuit device includes preparing an insulation resin sheet for which a first conductive layer and a second conductive layer are adhered to each other by insulation resin, forming through holes in the first conductive layer and the insulation resin at appointed points of the insulation resin sheet, and selectively exposing the rear side of the second conductive layer. A multi-layer connecting means is formed in the through holes and the first conductive layer is electrically connected to the second conductive layer. The method includes etching the first conductive layer to an appointed pattern, forming a first conductive path layer, and adhering and fixing semiconductor elements by electrically insulating the same on the first conductive path layer. The first conductive path layer and the semiconductor elements are overcoated with a sealing resin layer. The second conductive layer is etched to an appointed pattern after etching the entire surface thereof so as to become thin, and forming a second conductive path layer. External electrodes are formed at appointed points of the second conductive path layer.
摘要:
After a trench 54 is formed in a conductive foil 60, the circuit elements are mounted, and the insulating resin is applied on the conductive foil 60 as the support substrate. After being inverted, the conductive foil 60 is polished on the insulating resin 50 as the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive paths 51 and the circuit elements 52 are supported by the insulating resin 50, without the use of the support substrate. And the interconnects L1 to L3 requisite for the circuit are formed, and can be prevented from slipping because of the curved structure 59 and a visor 58.
摘要:
A first metal film 14 made of a Cu plated film is formed on a radiation substrate 13A made of Al, and an island 15 exposed from a back surface of a semiconductor device 10 is adhered thereto. At that time, the back surface of the semiconductor device 10 is brought into contact with contact areas, and a first opening portion OP is opened larger than an arranging area of the semiconductor device 10. Accordingly, the cleaning can be executed via the first opening portion OP exposed from peripheries of the semiconductor device 10. In addition, the heat generated from semiconductor elements 16 can be radiated excellently from the island 15 via a second supporting member 13A.
摘要:
A conductive plated layer 4 is fanned after through holes 21 are formed in the insulation resin 2 by using an insulation resin sheet 1 overcoated on a single side of the conductive layer 3 with insulation resin 2. A multi-layer connection structure can be achieved by the second conductive path layer 6 which is connected, in multi layers, to the first conductive path layer 5 formed by etching the conductive plated layer 4. Further, since semiconductor elements 7 are adhered to and fixed at the overcoating resin 8 that covers the first conductive path layer 5, the first conductive path layer 5 is finely patterned, and routing thereof can be made free. Further, since the second conductive layer 4 that has been fanned to be thick can be thinly etched, the second conductive path layers 6 can be finely patterned.
摘要:
The semiconductor elements for the small signal type circuits and the Au wire for connection are integrated as one package to produce the semiconductor devices 30A, 31A, 32, 33A, 34A and 38. In this way, the wire bonding of Au can be omitted, and the wire bonding of the small diameter Al wire and the large diameter Al wire is only required to complete the connection of the fine metal wire. These semiconductor devices have a plurality of circuit elements as one package, so that the mounting operation on the mounting board can be significantly reduced.