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1.发明授权Integrated circuit packaging system with shielding spacer and method of manufacture thereof 有权具有屏蔽间隔物的集成电路封装系统及其制造方法公开(公告)号：US08569870B1
公开(公告)日：2013-10-29
申请号：US13531941
申请日：2012-06-25
申请人： SinJae Lee , JongVin Park , Sung Jun Yoon , JiHoon Oh
发明人： SinJae Lee , JongVin Park , Sung Jun Yoon , JiHoon Oh
IPC分类号： H01L21/44
CPC分类号： H01L23/552 , H01L23/3128 , H01L23/4334 , H01L24/48 , H01L25/0657 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/48227 , H01L2224/73265 , H01L2224/92247 , H01L2225/0651 , H01L2225/06537 , H01L2225/06575 , H01L2225/06589 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A method of manufacture of an integrated circuit packaging system includes: providing a substrate; mounting a bottom integrated circuit over the substrate; connecting a bottom interconnect between the bottom integrated circuit and the substrate; and mounting a bottom shield-spacer above the bottom integrated circuit and the bottom shield-spacer includes a bottom shield plate above the bottom integrated circuit, a bottom shield pillar extending from a bottom shield foot and connected to the bottom shield plate, and a protuberance extending vertically above the bottom shield pillar and directly above the bottom shield foot.
摘要翻译： 一种集成电路封装系统的制造方法，包括：提供基板; 在基板上安装底部集成电路; 连接底部集成电路和衬底之间的底部互连; 并且在底部集成电路上方安装底部屏蔽间隔件，并且底部屏蔽隔离件包括底部集成电路上方的底部屏蔽板，从底部屏蔽脚延伸并连接到底部屏蔽板的底部屏蔽柱，以及突出部 在底部屏蔽柱上方垂直延伸并直接在底部屏蔽脚的上方延伸。
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公开(公告)号：US08004093B2
公开(公告)日：2011-08-23
申请号：US12185063
申请日：2008-08-01
申请人： JiHoon Oh , JinGwan Kim , Jaehyun Lim , SunYoung Chun , KyuWon Lee , SinJae Lee , JongVin Park
发明人： JiHoon Oh , JinGwan Kim , Jaehyun Lim , SunYoung Chun , KyuWon Lee , SinJae Lee , JongVin Park
CPC分类号： H01L25/105 , H01L23/49816 , H01L23/4985 , H01L24/31 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/03 , H01L25/0657 , H01L2224/05554 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/49175 , H01L2224/73204 , H01L2224/73215 , H01L2224/73265 , H01L2225/06568 , H01L2225/06579 , H01L2225/1023 , H01L2225/1041 , H01L2225/1058 , H01L2924/00014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/19107 , H01L2924/3011 , H01L2924/3025 , H01L2924/0665 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An integrated circuit package stacking system includes: forming a flexible substrate by: providing an insulating material, forming a stacking pad on the insulating material, forming a coupling pad on the insulating material, and forming a trace between the stacking pad and the coupling pad; providing a package substrate; coupling an integrated circuit to the package substrate; and applying a conductive adhesive on the package substrate for positioning the flexible substrate over the integrated circuit and coupling the flexible substrate on the conductive adhesive.
摘要翻译： 一种集成电路封装堆叠系统，包括：通过以下方式形成柔性基板：提供绝缘材料，在绝缘材料上形成堆叠焊盘，在绝缘材料上形成耦合焊盘，并在堆焊垫和耦合焊盘之间形成迹线; 提供封装衬底; 将集成电路耦合到所述封装衬底; 以及在所述封装衬底上施加导电粘合剂以将所述柔性衬底定位在所述集成电路上并将所述柔性衬底耦合在所述导电粘合剂上。
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公开(公告)号：US20090294941A1
公开(公告)日：2009-12-03
申请号：US12131038
申请日：2008-05-30
申请人： JiHoon Oh , KyuWon Lee , Jaehyun Lim , JongVin Park , SinJae Lee
发明人： JiHoon Oh , KyuWon Lee , Jaehyun Lim , JongVin Park , SinJae Lee
IPC分类号： H01L23/373 , H01L21/58
CPC分类号： H01L25/0657 , H01L23/3128 , H01L23/367 , H01L23/49833 , H01L23/552 , H01L24/16 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/105 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06575 , H01L2225/1023 , H01L2225/1041 , H01L2225/1058 , H01L2225/1088 , H01L2225/1094 , H01L2924/00014 , H01L2924/078 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2924/19107 , H01L2924/3025 , H01L2924/00012 , H01L2224/85 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A package-on-package system includes: providing a base substrate; mounting an integrated circuit on the base substrate; positioning a stacking interposer over the integrated circuit; and forming a heat spreader base around the integrated circuit by coupling the base substrate and the stacking interposer to the heat spreader base.
摘要翻译： 包装封装系统包括：提供基底; 在基底基板上安装集成电路; 在集成电路上定位堆叠插入器; 以及通过将基底基板和堆叠插入件耦合到散热器基座而在集成电路周围形成散热器基座。
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公开(公告)号：US07683469B2
公开(公告)日：2010-03-23
申请号：US12131038
申请日：2008-05-30
申请人： JiHoon Oh , KyuWon Lee , Jaehyun Lim , JongVin Park , SinJae Lee
发明人： JiHoon Oh , KyuWon Lee , Jaehyun Lim , JongVin Park , SinJae Lee
CPC分类号： H01L25/0657 , H01L23/3128 , H01L23/367 , H01L23/49833 , H01L23/552 , H01L24/16 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/105 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06575 , H01L2225/1023 , H01L2225/1041 , H01L2225/1058 , H01L2225/1088 , H01L2225/1094 , H01L2924/00014 , H01L2924/078 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2924/19107 , H01L2924/3025 , H01L2924/00012 , H01L2224/85 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A package-on-package system includes: providing a base substrate; mounting an integrated circuit on the base substrate; positioning a stacking interposer over the integrated circuit; and forming a heat spreader base around the integrated circuit by coupling the base substrate and the stacking interposer to the heat spreader base.
摘要翻译： 包装封装系统包括：提供基底; 在基底基板上安装集成电路; 在集成电路上定位堆叠插入器; 以及通过将基底基板和堆叠插入件耦合到散热器基座而在集成电路周围形成散热器基座。
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公开(公告)号：US20100025835A1
公开(公告)日：2010-02-04
申请号：US12185063
申请日：2008-08-01
申请人： JiHoon Oh , JinGwan Kim , Jaehyun Lim , SunYoung Chun , KyuWon Lee , SinJae Lee , JongVin Park
发明人： JiHoon Oh , JinGwan Kim , Jaehyun Lim , SunYoung Chun , KyuWon Lee , SinJae Lee , JongVin Park
IPC分类号： H01L23/538 , H01L21/58
CPC分类号： H01L25/105 , H01L23/49816 , H01L23/4985 , H01L24/31 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/03 , H01L25/0657 , H01L2224/05554 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/49175 , H01L2224/73204 , H01L2224/73215 , H01L2224/73265 , H01L2225/06568 , H01L2225/06579 , H01L2225/1023 , H01L2225/1041 , H01L2225/1058 , H01L2924/00014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/19107 , H01L2924/3011 , H01L2924/3025 , H01L2924/0665 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An integrated circuit package stacking system includes: forming a flexible substrate by: providing an insulating material, forming a stacking pad on the insulating material, forming a coupling pad on the insulating material, and forming a trace between the stacking pad and the coupling pad; providing a package substrate; coupling an integrated circuit to the package substrate; and applying a conductive adhesive on the package substrate for positioning the flexible substrate over the integrated circuit and coupling the flexible substrate on the conductive adhesive.
摘要翻译： 一种集成电路封装堆叠系统，包括：通过以下方式形成柔性基板：提供绝缘材料，在绝缘材料上形成堆叠焊盘，在绝缘材料上形成耦合焊盘，并在堆焊垫和耦合焊盘之间形成迹线; 提供封装衬底; 将集成电路耦合到所述封装衬底; 以及在所述封装衬底上施加导电粘合剂以将所述柔性衬底定位在所述集成电路上并将所述柔性衬底耦合在所述导电粘合剂上。
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6.发明申请Semiconductor Device and Method of Forming FO-WLCSP Having Conductive Layers and Conductive Vias Separated by Polymer Layers 有权半导体器件和形成具有由聚合物层分离的导电层和导电通孔的FO-WLCSP的方法公开(公告)号：US20120038053A1
公开(公告)日：2012-02-16
申请号：US12857362
申请日：2010-08-16
申请人： JiHoon Oh , SinJae Lee , JinGwan Kim
发明人： JiHoon Oh , SinJae Lee , JinGwan Kim
IPC分类号： H01L23/52 , H01L21/768 , H01L21/50
CPC分类号： H01L23/5384 , H01L21/486 , H01L21/50 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L21/768 , H01L23/3107 , H01L23/3128 , H01L23/5389 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/25 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/82 , H01L24/97 , H01L25/105 , H01L2221/68345 , H01L2221/68359 , H01L2221/68363 , H01L2221/68381 , H01L2221/68386 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/06131 , H01L2224/1132 , H01L2224/11334 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/11849 , H01L2224/11901 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/21 , H01L2224/2105 , H01L2224/215 , H01L2224/22 , H01L2224/221 , H01L2224/24011 , H01L2224/2405 , H01L2224/24105 , H01L2224/24226 , H01L2224/245 , H01L2224/25171 , H01L2224/29144 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48105 , H01L2224/48175 , H01L2224/48227 , H01L2224/48228 , H01L2224/48599 , H01L2224/48611 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/73265 , H01L2224/73267 , H01L2224/82005 , H01L2224/92244 , H01L2224/95001 , H01L2224/97 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H05K1/186 , H05K3/007 , H05K3/4602 , H05K3/4608 , H05K2201/0195 , H05K2201/10674 , H01L2924/00014 , H01L2924/01014 , H01L2924/0665 , H01L2924/0105 , H01L2224/82 , H01L2924/00012 , H01L2924/00 , H01L2224/83
摘要： A Fo-WLCSP has a first polymer layer formed around a semiconductor die. First conductive vias are formed through the first polymer layer around a perimeter of the semiconductor die. A first interconnect structure is formed over a first surface of the first polymer layer and electrically connected to the first conductive vias. The first interconnect structure has a second polymer layer and a plurality of second vias formed through the second polymer layer. A second interconnect structure is formed over a second surface of the first polymer layer and electrically connected to the first conductive vias. The second interconnect structure has a third polymer layer and a plurality of third vias formed through the third polymer layer. A semiconductor package can be mounted to the WLCSP in a PoP arrangement. The semiconductor package is electrically connected to the WLCSP through the first interconnect structure or second interconnect structure.
摘要翻译： Fo-WLCSP具有围绕半导体管芯形成的第一聚合物层。 通过围绕半导体管芯的周边的第一聚合物层形成第一导电通孔。 第一互连结构形成在第一聚合物层的第一表面上并电连接到第一导电通孔。 第一互连结构具有第二聚合物层和穿过第二聚合物层形成的多个第二通孔。 第二互连结构形成在第一聚合物层的第二表面上并电连接到第一导电通孔。 第二互连结构具有第三聚合物层和穿过第三聚合物层形成的多个第三通孔。 可以以PoP布置将半导体封装安装到WLCSP。 半导体封装通过第一互连结构或第二互连结构电连接到WLCSP。
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公开(公告)号：US08531012B2
公开(公告)日：2013-09-10
申请号：US12605292
申请日：2009-10-23
申请人： SinJae Lee , JinGwan Kim , JiHoon Oh , JaeHyun Lim , KyuWon Lee
发明人： SinJae Lee , JinGwan Kim , JiHoon Oh , JaeHyun Lim , KyuWon Lee
IPC分类号： H01L23/552 , H01L21/56
CPC分类号： H01L25/0657 , H01L21/4857 , H01L21/486 , H01L21/56 , H01L21/76898 , H01L23/3107 , H01L23/3128 , H01L23/481 , H01L23/49822 , H01L23/49827 , H01L23/552 , H01L24/48 , H01L25/50 , H01L2224/16225 , H01L2224/32225 , H01L2224/48225 , H01L2224/48227 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06537 , H01L2225/06541 , H01L2225/06548 , H01L2225/06572 , H01L2924/00014 , H01L2924/01322 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15156 , H01L2924/15174 , H01L2924/15311 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has an interconnect structure with a cavity formed partially through the interconnect structure. A first semiconductor die is mounted in the cavity. A first TSV is formed through the first semiconductor die. An adhesive layer is deposited over the interconnect structure and first semiconductor die. A shielding layer is mounted over the first semiconductor die. The shielding layer is secured to the first semiconductor die with the adhesive layer and grounded through the first TSV and interconnect structure to block electromagnetic interference. A second semiconductor die is mounted to the shielding layer and electrically connected to the interconnect structure. A second TSV is formed through the second semiconductor die. An encapsulant is deposited over the shielding layer, second semiconductor die, and interconnect structure. A slot is formed through the shielding layer for the encapsulant to flow into the cavity and cover the first semiconductor die.
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8.发明申请Semiconductor Device and Method of Mounting Semiconductor Die to Heat Spreader on Temporary Carrier and Forming Polymer Layer and Conductive Layer Over the Die 有权半导体器件和半导体模具安装在散热器上的临时载体和形成聚合物层和导体层的方法公开(公告)号：US20110037165A1
公开(公告)日：2011-02-17
申请号：US12541334
申请日：2009-08-14
申请人： JiHoon Oh , SinJae Lee , JinGwan Kim
发明人： JiHoon Oh , SinJae Lee , JinGwan Kim
CPC分类号： H01L23/552 , H01L21/52 , H01L21/561 , H01L21/565 , H01L21/76877 , H01L21/76895 , H01L23/3128 , H01L23/36 , H01L23/3675 , H01L23/49816 , H01L23/5226 , H01L23/528 , H01L23/5389 , H01L24/24 , H01L24/48 , H01L24/82 , H01L2224/04105 , H01L2224/19 , H01L2224/20 , H01L2224/211 , H01L2224/24246 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/83005 , H01L2224/92244 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15174 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is made by forming a heat spreader over a temporary carrier. A semiconductor die is mounted to the heat spreader. A first polymer layer is formed over the semiconductor die and heat spreader. A first conductive layer is formed over the first polymer layer. The first conductive layer is connected to the heat spreader and contact pads on the semiconductor die. A second polymer layer is formed over the first conductive layer. A second conductive layer is formed over the second polymer layer. The second conductive layer is electrically connected to the first conductive layer. Bumps are formed through a solder masking layer on the second conductive layer. The temporary carrier is removed. The heat spreader dissipates heat from the semiconductor die and provides shielding from inter-device interference. The heat spreader is grounded through the first and second conductive layers.
摘要翻译： 通过在临时载体上形成散热器来制造半导体器件。 半导体管芯安装在散热器上。 第一聚合物层形成在半导体管芯和散热器上。 在第一聚合物层上形成第一导电层。 第一导电层连接到散热器和半导体管芯上的接触焊盘。 在第一导电层上形成第二聚合物层。 在第二聚合物层上形成第二导电层。 第二导电层电连接到第一导电层。 通过第二导电层上的焊料掩模层形成凸起。 移除临时载体。 散热器从半导体管芯散热，并提供屏蔽器件间干扰。 散热器通过第一和第二导电层接地。
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9.发明申请Semiconductor Device and Method of Mounting Semiconductor Die to Heat Spreader on Temporary Carrier and Forming Polymer Layer and Conductive Layer Over the Die 有权半导体器件和半导体模具安装在散热器上的临时载体和形成聚合物层和导体层的方法公开(公告)号：US20110278705A1
公开(公告)日：2011-11-17
申请号：US13190339
申请日：2011-07-25
申请人： JiHoon Oh , SinJae Lee , JinGwan Kim
发明人： JiHoon Oh , SinJae Lee , JinGwan Kim
IPC分类号： H01L23/552 , H01L21/58
CPC分类号： H01L23/552 , H01L21/52 , H01L21/561 , H01L21/565 , H01L21/76877 , H01L21/76895 , H01L23/3128 , H01L23/36 , H01L23/3675 , H01L23/49816 , H01L23/5226 , H01L23/528 , H01L23/5389 , H01L24/24 , H01L24/48 , H01L24/82 , H01L2224/04105 , H01L2224/19 , H01L2224/20 , H01L2224/211 , H01L2224/24246 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/83005 , H01L2224/92244 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15174 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is made by forming a heat spreader over a carrier. A semiconductor die is mounted over the heat spreader with a first surface oriented toward the heat spreader. A first insulating layer is formed over the semiconductor die and heat spreader. A via is formed in the first insulating layer. A first conductive layer is formed over the first insulating layer and connected to the heat spreader through the via and to contact pads on the semiconductor die. The heat spreader extends from the first surface of the semiconductor die to the via. A second insulating layer is formed over the first conductive layer. A second conductive layer is electrically connected to the first conductive layer. The carrier is removed. The heat spreader dissipates heat from the semiconductor die and provides shielding from inter-device interference. The heat spreader is grounded through the first conductive layer.
摘要翻译： 通过在载体上形成散热器来制造半导体器件。 半导体管芯安装在散热器上方，第一表面朝向散热器。 第一绝缘层形成在半导体管芯和散热器上。 在第一绝缘层中形成通孔。 第一导电层形成在第一绝缘层之上，并通过通孔和半导体管芯上的接触焊盘连接到散热器。 散热器从半导体管芯的第一表面延伸到通孔。 在第一导电层上形成第二绝缘层。 第二导电层电连接到第一导电层。 载体被移除。 散热器从半导体管芯散热，并提供屏蔽器件间干扰。 散热器通过第一导电层接地。
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10.发明授权Semiconductor device and method of mounting semiconductor die to heat spreader on temporary carrier and forming polymer layer and conductive layer over the die 有权半导体器件和将半导体管芯安装到临时载体上的散热器并在模具上形成聚合物层和导电层的方法公开(公告)号：US08003496B2
公开(公告)日：2011-08-23
申请号：US12541334
申请日：2009-08-14
申请人： JiHoon Oh , SinJae Lee , JinGwan Kim
发明人： JiHoon Oh , SinJae Lee , JinGwan Kim
CPC分类号： H01L23/552 , H01L21/52 , H01L21/561 , H01L21/565 , H01L21/76877 , H01L21/76895 , H01L23/3128 , H01L23/36 , H01L23/3675 , H01L23/49816 , H01L23/5226 , H01L23/528 , H01L23/5389 , H01L24/24 , H01L24/48 , H01L24/82 , H01L2224/04105 , H01L2224/19 , H01L2224/20 , H01L2224/211 , H01L2224/24246 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/83005 , H01L2224/92244 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15174 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is made by forming a heat spreader over a temporary carrier. A semiconductor die is mounted to the heat spreader. A first polymer layer is formed over the semiconductor die and heat spreader. A first conductive layer is formed over the first polymer layer. The first conductive layer is connected to the heat spreader and contact pads on the semiconductor die. A second polymer layer is formed over the first conductive layer. A second conductive layer is formed over the second polymer layer. The second conductive layer is electrically connected to the first conductive layer. Bumps are formed through a solder masking layer on the second conductive layer. The temporary carrier is removed. The heat spreader dissipates heat from the semiconductor die and provides shielding from inter-device interference. The heat spreader is grounded through the first and second conductive layers.
摘要翻译： 通过在临时载体上形成散热器来制造半导体器件。 半导体管芯安装在散热器上。 第一聚合物层形成在半导体管芯和散热器上。 在第一聚合物层上形成第一导电层。 第一导电层连接到散热器和半导体管芯上的接触焊盘。 在第一导电层上形成第二聚合物层。 在第二聚合物层上形成第二导电层。 第二导电层电连接到第一导电层。 通过第二导电层上的焊料掩模层形成凸起。 移除临时载体。 散热器从半导体管芯散热，并提供屏蔽器件间干扰。 散热器通过第一和第二导电层接地。
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