公开(公告)号：US07259465B2

公开(公告)日：2007-08-21

申请号：US10104826

申请日：2002-03-22

申请人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Kazuma Miura ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

发明人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Kazuma Miura ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

IPC分类号： H01L29/40

CPC分类号： H01L24/13 ,  B32B15/01 ,  C22C5/02 ,  C22C9/02 ,  C22C11/06 ,  C22C13/00 ,  H01L21/50 ,  H01L21/56 ,  H01L21/563 ,  H01L23/10 ,  H01L23/3128 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/4924 ,  H01L23/49513 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/16 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29298 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81024 ,  H01L2224/81054 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/8121 ,  H01L2224/81409 ,  H01L2224/81815 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16315 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/141 ,  H05K3/3463 ,  H05K3/3484 ,  H05K2201/0215 ,  H05K2201/045 ,  H05K2201/09572 ,  H05K2201/10636 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01031 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/83205

摘要： Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, etc., and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

摘要翻译： 形成在半导体器件和衬底之间的接合部包括Cu等的金属球，Sn和金属球的化合物以及金属球通过化合物结合在一起。

公开(公告)号：US08022551B2

公开(公告)日：2011-09-20

申请号：US11399856

申请日：2006-04-07

申请人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Kazuma Miura ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

发明人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Kazuma Miura ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

IPC分类号： H01L29/40

CPC分类号： H01L24/13 ,  B32B15/01 ,  C22C5/02 ,  C22C9/02 ,  C22C11/06 ,  C22C13/00 ,  H01L21/50 ,  H01L21/56 ,  H01L21/563 ,  H01L23/10 ,  H01L23/3128 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/4924 ,  H01L23/49513 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/16 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29298 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81024 ,  H01L2224/81054 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/8121 ,  H01L2224/81409 ,  H01L2224/81815 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16315 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/141 ,  H05K3/3463 ,  H05K3/3484 ,  H05K2201/0215 ,  H05K2201/045 ,  H05K2201/09572 ,  H05K2201/10636 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01031 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/83205

摘要： Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, or other materials and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

摘要翻译： 在半导体器件和衬底之间形成的每一个接合点包括Cu的金属球或Sn的其它材料和化合物以及金属球，金属球通过化合物结合在一起。

公开(公告)号：US20070031279A1

公开(公告)日：2007-02-08

申请号：US11399856

申请日：2006-04-07

申请人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Kazuma Miura ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

发明人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Kazuma Miura ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

IPC分类号： C22C9/02

CPC分类号： H01L24/13 ,  B32B15/01 ,  C22C5/02 ,  C22C9/02 ,  C22C11/06 ,  C22C13/00 ,  H01L21/50 ,  H01L21/56 ,  H01L21/563 ,  H01L23/10 ,  H01L23/3128 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/4924 ,  H01L23/49513 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/16 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29298 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81024 ,  H01L2224/81054 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/8121 ,  H01L2224/81409 ,  H01L2224/81815 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16315 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/141 ,  H05K3/3463 ,  H05K3/3484 ,  H05K2201/0215 ,  H05K2201/045 ,  H05K2201/09572 ,  H05K2201/10636 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01031 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/83205

摘要： Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, or other materials and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

摘要翻译： 在半导体器件和衬底之间形成的每一个接合点包括Cu的金属球或Sn的其它材料和化合物以及金属球，金属球通过化合物结合在一起。

公开(公告)号：US07075183B2

公开(公告)日：2006-07-11

申请号：US09880733

申请日：2001-06-12

申请人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Kazuma Miura ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

发明人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Kazuma Miura ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

IPC分类号： H01L29/40

CPC分类号： H01L24/13 ,  B32B15/01 ,  C22C5/02 ,  C22C9/02 ,  C22C11/06 ,  C22C13/00 ,  H01L21/50 ,  H01L21/56 ,  H01L21/563 ,  H01L23/10 ,  H01L23/3128 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/4924 ,  H01L23/49513 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/16 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29298 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81024 ,  H01L2224/81054 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/8121 ,  H01L2224/81409 ,  H01L2224/81815 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16315 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/141 ,  H05K3/3463 ,  H05K3/3484 ,  H05K2201/0215 ,  H05K2201/045 ,  H05K2201/09572 ,  H05K2201/10636 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01031 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/83205

摘要： Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu etc. and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

公开(公告)号：US20060145352A1

公开(公告)日：2006-07-06

申请号：US11338529

申请日：2006-01-23

申请人： Tasao Soga ,  Hanae Hata ,  Tetsuya Nakatsuka ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

发明人： Tasao Soga ,  Hanae Hata ,  Tetsuya Nakatsuka ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

IPC分类号： H01L23/48

CPC分类号： H05K3/3484 ,  B23K35/0244 ,  B23K35/262 ,  H01L24/73 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/00013 ,  H01L2924/01012 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K1/141 ,  H05K3/3463 ,  H05K2201/0215 ,  H05K2201/0218 ,  H05K2201/045 ,  H05K2201/10636 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05669

摘要： In an electronic device which realizes high-temperature-side solder bonding in temperature-hierarchical bonding, a bonding portion between a semiconductor device and a substrate is formed of metal balls made of Cu, or the like, and compounds formed of metal balls and Sn, and the metal balls are bonded together by the compounds.

摘要翻译： 在实现温度分级接合中的高温侧焊接的电子设备中，半导体器件与衬底之间的接合部分由Cu等金属球形成，并且由金属球和Sn形成的化合物 ，金属球通过化合物结合在一起。

公开(公告)号：US06872465B2

公开(公告)日：2005-03-29

申请号：US10384931

申请日：2003-03-07

申请人： Tasao Soga ,  Hanae Hata ,  Tetsuya Nakatsuka ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

发明人： Tasao Soga ,  Hanae Hata ,  Tetsuya Nakatsuka ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

IPC分类号： B23K35/14 ,  B23K35/02 ,  B23K35/26 ,  H01L21/60 ,  H01L23/10 ,  H01L23/12 ,  H01L23/498 ,  H05K3/34 ,  B32B15/02

CPC分类号： H05K3/3484 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/262 ,  H01L23/49816 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11334 ,  H01L2224/13022 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/82 ,  H01L2224/85 ,  H01L2224/86 ,  H01L2924/01012 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K2201/0215 ,  Y10T428/12181 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12722 ,  Y10T428/1275 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/1291 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： In a solder that realizes high-temperature-side solder bonding in temperature-hierarchical bonding, a connection portion between a semiconductor device and a substrate is formed of metal balls made of Cu or the like and compounds formed of metal balls and Sn, and the metal balls are bonded together by the compounds.

摘要翻译： 在实现温度分级接合中的高温侧焊料接合的焊料中，半导体器件与基板之间的连接部由金属球等构成的金属球和由金属球和Sn形成的化合物形成， 金属球通过化合物结合在一起。

公开(公告)号：US06486411B2

公开(公告)日：2002-11-26

申请号：US09811445

申请日：2001-03-20

申请人： Kazuma Miura ,  Hanae Shimokawa ,  Koji Serizawa ,  Tasao Soga ,  Tetsuya Nakatsuka

发明人： Kazuma Miura ,  Hanae Shimokawa ,  Koji Serizawa ,  Tasao Soga ,  Tetsuya Nakatsuka

IPC分类号： H05K103

CPC分类号： H05K3/3463 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2924/15311 ,  H05K3/3436 ,  H05K2201/10992 ,  Y02P70/613 ,  Y10T428/12715 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor module solder bonding of high reliability in which the heat resisting properties of the circuit substrate and electronic parts are taken into consideration. In order to achieve this, there are provided semiconductor devices each having solder bumps as external pads, and a circuit substrate bonded to the external pads of each of the semiconductor devices through a solder paste, each of the solder bumps being made of a first lead-free solder, the solder paste being made of a second lead-free solder having a melting point lower than that of the first lead-free solder.

摘要翻译： 考虑到电路基板和电子部件的耐热性能的高可靠性的半导体模块焊接。 为了实现这一点，提供了各自具有作为外部焊盘的焊料凸块的半导体器件，以及通过焊膏将每个半导体器件的外部焊盘接合的电路基板，每个焊料凸块由第一引线 焊锡膏由熔点低于第一无铅焊料的第二无铅焊料制成。

公开(公告)号：US07145236B2

公开(公告)日：2006-12-05

申请号：US10265660

申请日：2002-10-08

申请人： Kazuma Miura ,  Hanae Shimokawa ,  Koji Serizawa ,  Tasao Soga ,  Tetsuya Nakatsuka

发明人： Kazuma Miura ,  Hanae Shimokawa ,  Koji Serizawa ,  Tasao Soga ,  Tetsuya Nakatsuka

IPC分类号： H01L23/48 ,  H01L21/48

CPC分类号： H05K3/3463 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2924/15311 ,  H05K3/3436 ,  H05K2201/10992 ,  Y02P70/613 ,  Y10T428/12715 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor module solder bonding of high reliability in which the heat resisting properties of the circuit substrate and electronic parts are taken into consideration. In order to achieve this, there are provided semiconductor devices each having solder bumps as external pads, and a circuit substrate bonded to the external pads of each of the semiconductor devices through a solder paste, each of the solder bumps being made of a first lead-free solder, the solder paste being made of a second lead-free solder having a melting point lower than that of the first lead-free solder.

摘要翻译： 考虑到电路基板和电子部件的耐热性能的高可靠性的半导体模块焊接。 为了实现这一点，提供了各自具有作为外部焊盘的焊料凸块的半导体器件，以及通过焊膏将每个半导体器件的外部焊盘接合的电路基板，每个焊料凸块由第一引线 焊锡膏由熔点低于第一无铅焊料的第二无铅焊料制成。

公开(公告)号：US07013564B2

公开(公告)日：2006-03-21

申请号：US09971566

申请日：2001-10-09

申请人： Hanae Shimokawa ,  Tasao Soga ,  Hiroaki Okudaira ,  Toshiharu Ishida ,  Tetsuya Nakatsuka ,  Yoshiharu Inaba ,  Asao Nishimura

发明人： Hanae Shimokawa ,  Tasao Soga ,  Hiroaki Okudaira ,  Toshiharu Ishida ,  Tetsuya Nakatsuka ,  Yoshiharu Inaba ,  Asao Nishimura

IPC分类号： H01R43/00 ,  H05K13/00

CPC分类号： H05K1/181 ,  B23K1/0016 ,  B23K35/004 ,  B23K35/007 ,  B23K35/262 ,  B23K2101/40 ,  H01L23/488 ,  H01L23/49811 ,  H01L23/532 ,  H01L24/29 ,  H01L2224/83101 ,  H01L2924/01322 ,  H01L2924/15747 ,  H05K3/3426 ,  H05K3/3463 ,  H05K2201/10909 ,  Y02P70/613 ,  Y10T29/49144 ,  Y10T29/49149 ,  Y10T29/49169 ,  Y10T428/12708 ,  Y10T428/12715 ,  H01L2924/00

摘要： A method of producing an electronic device by connecting a lead of a semiconductor device with an electrode of a circuit board to form a bonded structure. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength.

摘要翻译： 一种通过将半导体器件的引线与电路板的电极连接以形成接合结构来制造电子器件的方法。 在接合结构中，通过Sn-Bi合金层将无铅Sn-Ag-Bi合金焊料施加到电极。 Sn-Bi合金优选含有1〜20重量％的Bi，以获得良好的焊料润湿性。 为了获得本发明中具有较高可靠性的理想的接合特性，在Sn-Bi合金层下方设置有铜层，从而获得足够的接合强度。

公开(公告)号：US20060115994A1

公开(公告)日：2006-06-01

申请号：US11331220

申请日：2006-01-13

申请人： Hanae Shimokawa ,  Tasao Soga ,  Hiroaki Okudaira ,  Toshiharu Ishida ,  Tetsuya Nakatsuka ,  Yoshiharu Inaba ,  Asao Nishimura

发明人： Hanae Shimokawa ,  Tasao Soga ,  Hiroaki Okudaira ,  Toshiharu Ishida ,  Tetsuya Nakatsuka ,  Yoshiharu Inaba ,  Asao Nishimura

IPC分类号： H01L21/00

CPC分类号： H05K1/181 ,  B23K1/0016 ,  B23K35/004 ,  B23K35/007 ,  B23K35/262 ,  B23K2101/40 ,  H01L23/488 ,  H01L23/49811 ,  H01L23/532 ,  H01L24/29 ,  H01L2224/83101 ,  H01L2924/01322 ,  H01L2924/15747 ,  H05K3/3426 ,  H05K3/3463 ,  H05K2201/10909 ,  Y02P70/613 ,  Y10T29/49144 ,  Y10T29/49149 ,  Y10T29/49169 ,  Y10T428/12708 ,  Y10T428/12715 ,  H01L2924/00

摘要： Provided are a bonded structure by a lead-free solder and an electronic article comprising the bonded structure. The bonded structure has a stable bonding interface with respect to a change in process of time, an enough strength and resistance to occurrence of whiskers while keeping good wettability of the solder. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength.