摘要:
Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.
摘要:
Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.
摘要:
A semiconductor device with plated conductive pillar coupling is disclosed and may include a semiconductor die comprising a conductive pillar formed on a bond pad on the die, a substrate comprising an insulating layer with conductive patterns formed on a first surface of the substrate and a second surface opposite to the first surface, and a plating layer electrically coupling the conductive pillar and the bond pad on the first surface of the die to the conductive pattern on the first surface of the substrate. The conductive pillar, the conductive patterns, and the plating layer may comprise copper. The plating layer may fill a void between the copper pillar and the conductive pattern on the first surface of the substrate. The substrate may comprise a rigid circuit board, a flexible circuit board, a ceramic substrate, a semiconductor die, or semiconductor wafer.
摘要:
A semiconductor device utilizing redistribution layers to couple stacked die is disclosed and may include a first semiconductor die with a first surface comprising bond pads, a second surface opposite the first surface, and sloped side surfaces between the first and second surfaces, such that a cross-section of the first die is trapezoidal in shape. A second semiconductor die with a first surface may be bonded to the second surface of the first die, wherein the first surface of the second die may comprise bond pads. A passivation layer may be formed on the first surface and sloped side surfaces of the first die and the first surface of the second die. A redistribution layer may be formed on the passivation layer, electrically coupling bond pads on the first and second die. A conductive pillar may extend from a bond pad on the second die to the second redistribution layer.
摘要:
A semiconductor device utilizing redistribution layers to couple stacked die is disclosed and may include a first semiconductor die with a first surface comprising bond pads, a second surface opposite the first surface, and sloped side surfaces between the first and second surfaces, such that a cross-section of the first die is trapezoidal in shape. A second semiconductor die with a first surface may be bonded to the second surface of the first die, wherein the first surface of the second die may comprise bond pads. A passivation layer may be formed on the first surface and sloped side surfaces of the first die and the first surface of the second die. A redistribution layer may be formed on the passivation layer, electrically coupling bond pads on the first and second die. A conductive pillar may extend from a bond pad on the second die to the second redistribution layer.
摘要:
A semiconductor device and a fabrication method thereof are provided. An electrically conductive elastic member is formed on a semiconductor die, and a conductive bump is formed on the elastic member. Accordingly, since the conductive bump is formed on the elastic member, or to protrude from a top surface of the elastic member, the height and thus diameter of the conductive bump is reduced allowing a fine pitch to be realized. Further, the elastic member is elastic and thus mitigates external impacts from being transferred from the conductive bump to the semiconductor die.
摘要:
A semiconductor device and a manufacturing method thereof are disclosed. A first insulation layer is formed on a semiconductor die, a redistribution layer electrically connected to a bond pad is formed on the first insulation layer, and a second insulation layer covers the redistribution layer. The second insulation layer is made of a cheap, non-photosensitive material. Accordingly, the manufacturing cost of the semiconductor device can be reduced.
摘要:
Disclosed are an image sensor package and a method for manufacturing the same. A sealing portion is formed between an image sensor die and a glass substrate to completely isolate the sensing portion of the image sensor die from external environment. Electrically conductive bumps are formed outside of the sealing portion to electrically connect the image sensor die to the glass substrate. The image sensor die can be sealed by a cap while the image sensor die is connected to the glass substrate via the electrically conductive bumps.
摘要:
Semiconductor packages are disclosed. An exemplary package includes horizontal leads each having a first side and an opposite second side. The second side includes a recessed horizontal surface. Two stacked semiconductor chips are within the package and are electrically interconnected in a flip chip style. One chip extends over the first side of the leads and is electrically connected thereto. The chips are encapsulated in a package body formed of an encapsulating material. The recessed horizontal surface of the leads is covered by the encapsulating material, and a portion of the second side of each lead is exposed at an exterior surface of the package body as an input/output terminal. A surface of one or both chips may be exposed. The stack of chips may be supported on the first side of the leads or on a chip mounting plate.
摘要:
Provided are a semiconductor device and a method of manufacturing the same. A carrier is removed after a first semiconductor die and a second semiconductor die are stacked on each other, and then a first encapsulant is formed, so that the carrier may be easily removed when compared to approaches in which a carrier is removed from a wafer having a thin thickness.