公开(公告)号：US20060291029A1

公开(公告)日：2006-12-28

申请号：US11430513

申请日：2006-05-08

申请人： Mou-Shiung Lin ,  Chien-Kang Chou ,  Ke-Hung Chen

发明人： Mou-Shiung Lin ,  Chien-Kang Chou ,  Ke-Hung Chen

IPC分类号： G02B26/08

CPC分类号： H01L23/5227 ,  H01L21/2885 ,  H01L21/563 ,  H01L21/76801 ,  H01L21/76885 ,  H01L23/3114 ,  H01L23/5223 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/05183 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45176 ,  H01L2224/45183 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2224/83851 ,  H01L2224/05552 ,  H01L2224/05599

摘要： A post passivation rerouting support structure comprises a relatively thin support layer above the passivation layer to support the RDL, and a relatively thick support layer for fine pitch interconnects extending from the RDL and terminating as contact structures at the surface of the thick support layer, for a next level packaging structure. The thick support layer is planarized before defining the contact structures. The thick support layer may be formed after the conducting posts have been formed, or the thick support layer is formed before forming the conducting posts in vias formed in the thick support layer. An encapsulating layer may be provided above the thick support layer, which top surface is planarized before defining the contact structures. The encapsulating layer and the further support layer may be the same layer.

公开(公告)号：US08558383B2

公开(公告)日：2013-10-15

申请号：US12264271

申请日：2008-11-04

申请人： Mou-Shiung Lin ,  Chien-Kang Chou ,  Ke-Hung Chen

发明人： Mou-Shiung Lin ,  Chien-Kang Chou ,  Ke-Hung Chen

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/5227 ,  H01L21/2885 ,  H01L21/563 ,  H01L21/76801 ,  H01L21/76885 ,  H01L23/3114 ,  H01L23/5223 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/05183 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45176 ,  H01L2224/45183 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2224/83851 ,  H01L2224/05552 ,  H01L2224/05599

摘要： A post passivation rerouting support structure comprises a relatively thin support layer above the passivation layer to support the RDL, and a relatively thick support layer for fine pitch interconnects extending from the RDL and terminating as contact structures at the surface of the thick support layer, for a next level packaging structure. The thick support layer is planarized before defining the contact structures. The thick support layer may be formed after the conducting posts have been formed, or the thick support layer is formed before forming the conducting posts in vias formed in the thick support layer. An encapsulating layer may be provided above the thick support layer, which top surface is planarized before defining the contact structures. The encapsulating layer and the further support layer may be the same layer.

摘要翻译： 后钝化重路由支持结构包括钝化层上方相对薄的支撑层以支撑RDL，以及用于从RDL延伸并作为接触结构终止于厚支撑层表面的细间距互连的相对较厚的支撑层，用于 下一级包装结构。 在限定接触结构之前，将厚支撑层平坦化。 可以在形成导电柱之后形成厚的支撑层，或者在形成在厚支撑层中的通孔中形成导电柱之前形成厚的支撑层。 可以在厚支撑层之上设置封装层，在限定接触结构之前该顶表面被平坦化。 封装层和另外的支撑层可以是相同的层。

公开(公告)号：US20030107137A1

公开(公告)日：2003-06-12

申请号：US09963066

申请日：2001-09-24

发明人： Roger J. Stierman ,  Seth Miller ,  Howard R. Test ,  Christo P. Bojkov ,  John P. Harris ,  Reynaldo M. Rincon ,  Scott W. Mitchell ,  Gonzalo Amador

IPC分类号： H01L023/48 ,  H01L023/52 ,  H01L029/40

CPC分类号： H01L24/05 ,  B81B7/0006 ,  B81C1/00833 ,  B81C99/0045 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/0516 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/0517 ,  H01L2224/05172 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/05178 ,  H01L2224/05179 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05183 ,  H01L2224/05184 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48673 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48773 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/48873 ,  H01L2224/78252 ,  H01L2224/78253 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/01004 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2224/48744 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/206

摘要： A microelectronic mechanical structure (MEMS) comprising a semiconductor chip having an integrated circuit including a plurality of micromechanical components, and a plurality of conductive routing lines integral with the chip; the routing lines having contact terminals of oxide-free metal; and the terminals having a layer of barrier metal on the oxide-free metal and an outermost layer of noble metal, whereby damage-free testing of the circuit is possible using test probe needles. The barrier metal is selected from a group consisting of nickel, cobalt, chromium, molybdenum, titanium, tungsten, tantalum, palladium, platinum, rhodium, rhenium, osmium, vanadium, iron, ruthenium, niobium, iridium, zirconium, hafnium, copper, and alloys thereof. Alloys of these metals may contain phosphorus or boron. The outermost layer is a noble metal which is bondable or solderable, and is selected from a group consisting of gold, platinum, palladium, silver, rhodium, and copper. Alloys of these metals may contain phosphorus or boron.

摘要翻译： 一种微电子机械结构（MEMS），包括具有包括多个微机械部件的集成电路的半导体芯片和与所述芯片成一体的多个导电布线线路; 所述布线线具有无氧化物金属的接触端子; 并且端子在无氧化物金属上具有阻挡金属层和贵金属的最外层，由此可以使用测试探针针对电路进行无损检测。 阻挡金属选自镍，钴，铬，钼，钛，钨，钽，钯，铂，铑，铼，锇，钒，铁，钌，铌，铱，锆，铪，铜， 及其合金。 这些金属的合金可以含有磷或硼。 最外层是可结合或可焊接的贵金属，并且选自由金，铂，钯，银，铑和铜组成的组。 这些金属的合金可以含有磷或硼。

公开(公告)号：US09887176B2

公开(公告)日：2018-02-06

申请号：US15403409

申请日：2017-01-11

申请人： Chengwei Wu

发明人： Iou Ming Lou

IPC分类号： H01L25/00 ,  H01L25/065 ,  H01L23/522 ,  H01L23/498 ,  H01L25/11 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538

CPC分类号： H01L25/0652 ,  H01L21/568 ,  H01L23/13 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3192 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/5384 ,  H01L23/5385 ,  H01L24/02 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/117 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/023 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05026 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05173 ,  H01L2224/05183 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06051 ,  H01L2224/08225 ,  H01L2224/1184 ,  H01L2224/12105 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13553 ,  H01L2224/13582 ,  H01L2224/16141 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/19 ,  H01L2224/2101 ,  H01L2224/221 ,  H01L2224/24135 ,  H01L2224/24137 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81193 ,  H01L2224/81895 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/0652 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/07025 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/00 ,  H01L2224/83005 ,  H01L2224/45099

摘要： A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.

公开(公告)号：US20160155723A1

公开(公告)日：2016-06-02

申请号：US14952920

申请日：2015-11-26

申请人： Chengwei WU

发明人： Iou Ming Lou

IPC分类号： H01L25/065 ,  H01L25/18 ,  H01L23/528 ,  H01L23/31 ,  H01L23/00 ,  H01L23/522

CPC分类号： H01L25/0652 ,  H01L21/568 ,  H01L23/13 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3192 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/5384 ,  H01L23/5385 ,  H01L24/02 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/117 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/023 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05026 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05173 ,  H01L2224/05183 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06051 ,  H01L2224/08225 ,  H01L2224/1184 ,  H01L2224/12105 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13553 ,  H01L2224/13582 ,  H01L2224/16141 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/19 ,  H01L2224/2101 ,  H01L2224/221 ,  H01L2224/24135 ,  H01L2224/24137 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81193 ,  H01L2224/81895 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/0652 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/07025 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/00 ,  H01L2224/83005 ,  H01L2224/45099

摘要： A semiconductor device is disclosed. The semiconductor device comprises a die, a redistribution structure, and a plurality of metal posts. The redistribution structure comprises a first sublayer, a second sublayer, and a third sublayer. The first sublayer comprises a plurality of first metal traces with a first trace thickness A. The third sublayer comprises a plurality of third metal traces with a third trace thickness C. The first trace thickness A is smaller than the third trace thickness C.

摘要翻译： 公开了一种半导体器件。 半导体器件包括管芯，再分布结构和多个金属柱。 再分配结构包括第一子层，第二子层和第三子层。 第一子层包括具有第一迹线厚度A的多个第一金属迹线。第三子层包括具有第三迹线厚度C的多个第三金属迹线。第一迹线厚度A小于第三迹线厚度C.

公开(公告)号：US20090057895A1

公开(公告)日：2009-03-05

申请号：US12264271

申请日：2008-11-04

申请人： Mou-Shiung Lin ,  Chien-Kang Chou ,  Ke-Hung Chen

发明人： Mou-Shiung Lin ,  Chien-Kang Chou ,  Ke-Hung Chen

IPC分类号： H01L23/488

CPC分类号： H01L23/5227 ,  H01L21/2885 ,  H01L21/563 ,  H01L21/76801 ,  H01L21/76885 ,  H01L23/3114 ,  H01L23/5223 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/05183 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45176 ,  H01L2224/45183 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2224/83851 ,  H01L2224/05552 ,  H01L2224/05599

摘要： A post passivation rerouting support structure comprises a relatively thin support layer above the passivation layer to support the RDL, and a relatively thick support layer for fine pitch interconnects extending from the RDL and terminating as contact structures at the surface of the thick support layer, for a next level packaging structure. The thick support layer is planarized before defining the contact structures. The thick support layer may be formed after the conducting posts have been formed, or the thick support layer is formed before forming the conducting posts in vias formed in the thick support layer. An encapsulating layer may be provided above the thick support layer, which top surface is planarized before defining the contact structures. The encapsulating layer and the further support layer may be the same layer.

摘要翻译： 后钝化重路由支持结构包括钝化层上方相对薄的支撑层以支撑RDL，以及用于从RDL延伸并作为接触结构终止于厚支撑层表面的细间距互连的相对较厚的支撑层，用于 下一级包装结构。 在限定接触结构之前，将厚支撑层平坦化。 可以在形成导电柱之后形成厚的支撑层，或者在形成在厚支撑层中的通孔中形成导电柱之前形成厚的支撑层。 可以在厚支撑层之上设置封装层，在限定接触结构之前该顶表面被平坦化。 封装层和另外的支撑层可以是相同的层。

公开(公告)号：US07468545B2

公开(公告)日：2008-12-23

申请号：US11430513

申请日：2006-05-08

申请人： Mou-Shiung Lin ,  Chien-Kang Chou ,  Ke-Hung Chen

发明人： Mou-Shiung Lin ,  Chien-Kang Chou ,  Ke-Hung Chen

IPC分类号： H01L29/06

CPC分类号： H01L23/5227 ,  H01L21/2885 ,  H01L21/563 ,  H01L21/76801 ,  H01L21/76885 ,  H01L23/3114 ,  H01L23/5223 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/05183 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45176 ,  H01L2224/45183 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2224/83851 ,  H01L2224/05552 ,  H01L2224/05599

摘要： A post passivation rerouting support structure comprises a relatively thin support layer above the passivation layer to support the RDL, and a relatively thick support layer for fine pitch interconnects extending from the RDL and terminating as contact structures at the surface of the thick support layer, for a next level packaging structure. The thick support layer is planarized before defining the contact structures. The thick support layer may be formed after the conducting posts have been formed, or the thick support layer is formed before forming the conducting posts in vias formed in the thick support layer. An encapsulating layer may be provided above the thick support layer, which top surface is planarized before defining the contact structures. The encapsulating layer and the further support layer may be the same layer.

摘要翻译： 后钝化重路由支持结构包括钝化层上方相对薄的支撑层以支撑RDL，以及用于从RDL延伸并作为接触结构终止于厚支撑层表面的细间距互连的相对较厚的支撑层，用于 下一级包装结构。 在限定接触结构之前，将厚支撑层平坦化。 可以在形成导电柱之后形成厚的支撑层，或者在形成在厚支撑层中的通孔中形成导电柱之前形成厚的支撑层。 可以在厚支撑层之上设置封装层，在限定接触结构之前该顶表面被平坦化。 封装层和另外的支撑层可以是相同的层。

公开(公告)号：US20240071973A1

公开(公告)日：2024-02-29

申请号：US18502389

申请日：2023-11-06

申请人： Micron Technology, Inc.

发明人： Wei Zhou

IPC分类号： H01L23/00

CPC分类号： H01L24/16 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/05178 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05183 ,  H01L2224/05184 ,  H01L2224/05541 ,  H01L2224/11826 ,  H01L2224/11827 ,  H01L2224/11845 ,  H01L2224/11849 ,  H01L2224/13009 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/1318 ,  H01L2224/13181 ,  H01L2224/13183 ,  H01L2224/13184 ,  H01L2224/13565 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/32145 ,  H01L2224/73103 ,  H01L2224/81815 ,  H01L2224/8185 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/07025

摘要： A semiconductor device assembly, comprising a first semiconductor device including a first substrate with a frontside surface, a plurality of solder bumps located on the frontside surface of the first substrate, and a first polymer layer on the frontside surface. The semiconductor device assembly also comprises a second semiconductor device including a second substrate with a backside surface, a plurality of TSVs protruding from the backside surface of the second substrate, and a second polymer layer on the backside surface of the first substrate, the second polymer layer having a plurality of openings corresponding to the plurality of TSVs. The first and second semiconductor devices are bonded such that the first polymer layer contacts the second polymer layer and each of the plurality of solder bumps extends into a corresponding one of the plurality of openings and contacts a corresponding one of the plurality of TSVs.

公开(公告)号：US20230282605A1

公开(公告)日：2023-09-07

申请号：US17684292

申请日：2022-03-01

申请人： Micron Technology, Inc.

发明人： Wei Zhou

IPC分类号： H01L23/00

CPC分类号： H01L24/16 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/11 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L2224/05541 ,  H01L2224/13009 ,  H01L2224/14181 ,  H01L2224/13565 ,  H01L2224/11826 ,  H01L2224/11827 ,  H01L2224/11845 ,  H01L2224/11849 ,  H01L2224/16146 ,  H01L24/32 ,  H01L2224/32145 ,  H01L24/73 ,  H01L2224/73103 ,  H01L24/29 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/1318 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13181 ,  H01L2224/13169 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13183 ,  H01L2224/13173 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/0518 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05169 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05176 ,  H01L2224/05178 ,  H01L2224/05183 ,  H01L2224/05173 ,  H01L2224/81815 ,  H01L2224/8185 ,  H01L2924/0665 ,  H01L2924/0635 ,  H01L2924/07025

摘要： A semiconductor device assembly, comprising a first semiconductor device including a first substrate with a frontside surface, a plurality of solder bumps located on the frontside surface of the first substrate, and a first polymer layer on the frontside surface. The semiconductor device assembly also comprises a second semiconductor device including a second substrate with a backside surface, a plurality of TSVs protruding from the backside surface of the second substrate, and a second polymer layer on the backside surface of the first substrate, the second polymer layer having a plurality of openings corresponding to the plurality of TSVs. The first and second semiconductor devices are bonded such that the first polymer layer contacts the second polymer layer and each of the plurality of solder bumps extends into a corresponding one of the plurality of openings and contacts a corresponding one of the plurality of TSVs.

公开(公告)号：US20180114774A1

公开(公告)日：2018-04-26

申请号：US15850403

申请日：2017-12-21

申请人： CHENGWEI WU

发明人： Iou Ming Lou

IPC分类号： H01L25/065 ,  H01L23/31 ,  H01L23/498 ,  H01L23/522 ,  H01L23/538 ,  H01L25/00 ,  H01L23/00 ,  H01L25/11

CPC分类号： H01L25/0652 ,  H01L21/568 ,  H01L23/13 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3192 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/5384 ,  H01L23/5385 ,  H01L24/02 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/117 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/023 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05026 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05173 ,  H01L2224/05183 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06051 ,  H01L2224/08225 ,  H01L2224/1184 ,  H01L2224/12105 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13553 ,  H01L2224/13582 ,  H01L2224/16141 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/19 ,  H01L2224/2101 ,  H01L2224/221 ,  H01L2224/24135 ,  H01L2224/24137 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81193 ,  H01L2224/81895 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/0652 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/07025 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/00 ,  H01L2224/83005 ,  H01L2224/45099

摘要： A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.