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    Soft plasma oxidizing plasma method for forming carbon doped silicon containing dielectric layer with enhanced adhesive properties
    4.
    发明授权
    Soft plasma oxidizing plasma method for forming carbon doped silicon containing dielectric layer with enhanced adhesive properties 有权
    软等离子体氧化等离子体法，用于形成具有增强的粘合性质的含碳掺杂的含硅介电层

    公开(公告)号：US06407013B1

    公开(公告)日：2002-06-18

    申请号：US09761422

    申请日：2001-01-16

    Applicant: Lain-Jong Li ,  Tien-I Bao ,  Cheng-Chung Lin ,  Syun-Ming Jang

    Inventor： Lain-Jong Li ,  Tien-I Bao ,  Cheng-Chung Lin ,  Syun-Ming Jang

    IPC: H01L2131

    CPC classification number: H01L21/3105 ,  H01L21/76826 ,  H01L21/76829

    Abstract: Within a method for forming a dielectric layer within a microelectronic fabrication there is first provided a substrate. There is then formed over the substrate a carbon doped silicon containing dielectric layer. There is then treated the carbon doped silicon containing dielectric layer with an oxidizing plasma to form from the carbon doped silicon containing dielectric layer an oxidizing plasma treated carbon doped silicon containing dielectric layer. By treating the carbon doped silicon containing dielectric layer with the oxidizing plasma, particularly under mild conditions, to form therefrom the oxidizing plasma treated carbon doped silicon containing dielectric layer, adhesion of an additional microelectronic layer upon the oxidizing plasma treated carbon doped silicon containing dielectric layer is enhanced in comparison with adhesion of the additional microelectronic layer upon the carbon doped silicon containing dielectric layer, while not compromising dielectric properties of the carbon doped silicon containing dielectric layer.

    Abstract translation: 在微电子制造中形成电介质层的方法中，首先提供衬底。 然后在衬底上形成含碳掺杂的含硅电介质层。 然后用具有氧化等离子体的碳掺杂的含硅介电层处理从含碳掺杂的含硅介电层形成氧化等离子体处理的含碳的含硅介电层。 通过用氧化等离子体处理含碳掺杂的含硅电介质层，特别是在温和条件下由其形成氧化等离子体处理的含碳硅的介电层，附加的微电子层与氧化等离子体处理的碳掺杂的含硅介电层 与附加的微电子层对含碳的含硅介电层的粘附性相比增强，同时不损害含碳掺杂的含硅介电层的介电性质。

    Surface treatment of metal interconnect lines
    10.
    发明授权
    Surface treatment of metal interconnect lines 有权
    金属互连线的表面处理

    公开(公告)号：US08053894B2

    公开(公告)日：2011-11-08

    申请号：US11213238

    申请日：2005-08-26

    Applicant: Wen-Kai Wan ,  Yih-Hsiung Lin ,  Ming-Ta Lei ,  Baw-Ching Perng ,  Cheng-Chung Lin ,  Chia-Hui Lin ,  Ai-Sen Liu

    Inventor： Wen-Kai Wan ,  Yih-Hsiung Lin ,  Ming-Ta Lei ,  Baw-Ching Perng ,  Cheng-Chung Lin ,  Chia-Hui Lin ,  Ai-Sen Liu

    IPC: H01L23/48

    CPC classification number: H01L21/76843 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76886

    Abstract: Apparatus for forming a semiconductor structure comprising a first layer on top of a substrate wherein the first layer defines conductive regions such as copper interconnect lines and non-conductive regions such as dielectric materials. The conductive regions are covered by a second layer of a material different than the first layer such as for example nickel and then the structure is heat treated such that the interconnect lines and second metal, such as a copper interconnect line and a nickel second layer, interact with each other to form an alloy layer. The alloy layer has superior qualities for adhering to both the copper interconnect lines and a subsequently deposited dielectric material.

    Abstract translation: 用于形成半导体结构的装置，其包括在衬底的顶部上的第一层，其中第一层限定诸如铜互连线和非导电区域（例如介电材料）的导电区域。 导电区域被不同于第一层的材料的第二层（例如镍）覆盖，然后对该结构进行热处理，使得互连线和第二金属（例如铜互连线和镍第二层） 相互作用形成合金层。 合金层具有优异的粘附于铜互连线和随后沉积的电介质材料的品质。

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