公开(公告)号：US09754912B2

公开(公告)日：2017-09-05

申请号：US15181740

申请日：2016-06-14

Applicant: Infineon Technologies AG

Inventor： Khalil Hosseini ,  Matthias Stecher

IPC: H01L21/44 ,  H01L23/00 ,  H01L23/532 ,  H01L21/56

CPC classification number: H01L24/48 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/81 ,  H01L24/85 ,  H01L2224/0347 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73257 ,  H01L2224/81801 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2224/05164 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/2075 ,  H01L2924/00012 ,  H01L2924/01006

Abstract: An electronic device and method for production is disclosed. One embodiment provides an integrated component having a first layer which is composed of copper or a copper alloy or which contains copper or a copper alloy, and having an electrically conductive second layer, whose material differs from the material of the first layer, and a connection apparatus which is arranged on the first layer and on the second layer.

公开(公告)号：US20160240449A1

公开(公告)日：2016-08-18

申请号：US15095784

申请日：2016-04-11

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Manfred Mengel ,  Khalil Hosseini ,  Franz-Peter Kalz

IPC: H01L23/29 ,  H01L23/495 ,  C25D13/12 ,  H01L21/48 ,  H01L21/56 ,  C25D13/06 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/293 ,  C25D13/06 ,  C25D13/12 ,  H01L21/4825 ,  H01L21/56 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49582 ,  H01L23/49586 ,  H01L23/573 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/84 ,  H01L24/85 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37139 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/8492 ,  H01L2224/8592 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2924/01322 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H05K3/284 ,  H05K2203/135 ,  Y10T29/49144 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/00

Abstract: A packaged component and a method for making a packaged component are disclosed. In an embodiment the packaged component includes a component carrier having a component carrier contact and a component disposed on the component carrier, the component having a component contact. The packaged component further includes a conductive connection element connecting the component carrier contact with the component contact, an insulating film disposed directly at least on one of a top surface of the component or the conductive connection element, and an encapsulant encapsulating the component carrier, the component and the enclosed conductive connection elements.

Abstract translation: 公开了封装组件和制造封装组件的方法。 在一个实施例中，封装部件包括具有部件载体接触件和设置在部件载体上的部件的部件载体，该部件具有部件接触。 封装部件还包括将部件载体接触件与部件接触件连接的导电连接元件，直接设置在部件或导电连接元件的顶表面中的至少一个上的绝缘膜，以及封装部件载体的密封剂， 组件和封闭的导电连接元件。

公开(公告)号：US09368447B2

公开(公告)日：2016-06-14

申请号：US13966320

申请日：2013-08-14

Applicant: Infineon Technologies AG

Inventor： Khalil Hosseini ,  Matthias Stecher

IPC: H01L23/52 ,  H01L23/532 ,  H01L23/00

CPC classification number: H01L24/48 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/81 ,  H01L24/85 ,  H01L2224/0347 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73257 ,  H01L2224/81801 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2224/05164 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/2075 ,  H01L2924/00012 ,  H01L2924/01006

Abstract: An electronic device and method for production is disclosed. One embodiment provides an integrated component having a first layer which is composed of copper or a copper alloy or which contains copper or a copper alloy, and having an electrically conductive second layer, whose material differs from the material of the first layer, and a connection apparatus which is arranged on the first layer and on the second layer.

公开(公告)号：US09190389B2

公开(公告)日：2015-11-17

申请号：US13951554

申请日：2013-07-26

Applicant: Infineon Technologies AG

Inventor： Georg Meyer-Berg ,  Joachim Mahler ,  Khalil Hosseini

IPC: H01L23/02 ,  H01L25/04 ,  H01L23/00 ,  H01L23/498 ,  H01L25/16 ,  H01L23/538

CPC classification number: H01L25/04 ,  H01L23/49861 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L25/16 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2224/24246 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00

Abstract: A chip package device includes an electrically conducting chip carrier, at least one semiconductor chip attached to the electrically conducting chip carrier, and an insulating laminate structure embedding the chip carrier, the at least one semiconductor chip and a passive electronic device. The passive electronic device includes a first structured electrically conducting layer, the first structured electrically conducting layer extending over a surface of the laminate structure.

Abstract translation: 芯片封装器件包括导电芯片载体，至少一个连接到导电芯片载体的半导体芯片，以及嵌入芯片载体，至少一个半导体芯片和无源电子器件的绝缘叠层结构。 无源电子器件包括第一结构导电层，第一结构化导电层在层压结构的表面上延伸。

公开(公告)号：US09165792B2

公开(公告)日：2015-10-20

申请号：US13625893

申请日：2012-09-25

Applicant: Infineon Technologies AG

Inventor： Khalil Hosseini ,  Joachim Mahler ,  Anton Mauder

IPC: H01L23/48 ,  H01L21/50 ,  H01L23/31 ,  H01L21/683 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L21/50 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3171 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2224/03462 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05664 ,  H01L2224/08145 ,  H01L2224/11462 ,  H01L2224/13009 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13118 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1316 ,  H01L2224/13164 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/27416 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29188 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/80203 ,  H01L2224/80801 ,  H01L2224/80893 ,  H01L2224/80894 ,  H01L2224/83805 ,  H01L2224/8385 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00

Abstract: An integrated circuit is provided, the integrated circuit including: a carrier including at least one electronic component and at least one contact area disposed on a first side of the carrier, wherein the at least one electronic component is electrically connected to the at least one contact area; an inorganic material layer wafer bonded to the first side of the carrier, wherein the carrier has a first coefficient of thermal expansion, and wherein the inorganic material layer has a second coefficient of thermal expansion, wherein the second coefficient of thermal expansion has a difference of less than 100% compared with the first coefficient of thermal expansion; and at least one contact via formed through the inorganic material layer, wherein the at least one contact via contacts the at least one contact area.

Abstract translation: 提供集成电路，集成电路包括：载体，其包括至少一个电子部件和布置在载体的第一侧上的至少一个接触区域，其中至少一个电子部件电连接到该至少一个触点 区; 与所述载体的第一侧接合的无机材料层晶片，其中所述载体具有第一热膨胀系数，并且其中所述无机材料层具有第二热膨胀系数，其中所述第二热膨胀系数具有 与第一热膨胀系数相比低于100％; 以及通过无机材料层形成的至少一个接触孔，其中所述至少一个接触通孔接触所述至少一个接触区域。

公开(公告)号：US09041226B2

公开(公告)日：2015-05-26

申请号：US13798141

申请日：2013-03-13

Applicant: Infineon Technologies AG

Inventor： Rainer Steiner ,  Edward Fuergut ,  Khalil Hosseini ,  Georg Meyer-Berg ,  Joachim Mahler

IPC: H01L23/48 ,  H01L21/00 ,  H01L23/00 ,  H01L23/495 ,  H01L23/31

CPC classification number: H01L23/562 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49517 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/24 ,  H01L24/25 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L24/92 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/24246 ,  H01L2224/2518 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92144 ,  H01L2224/92244 ,  H01L2924/07802 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00

Abstract: In various embodiments, a chip arrangement is provided. The chip arrangement may include a chip carrier and a chip mounted on the chip carrier. The chip may include at least two chip contacts and an insulating adhesive between the chip and the chip carrier to adhere the chip to the chip carrier. The at least two chip contacts may be electrically coupled to the chip carrier.

Abstract translation: 在各种实施例中，提供了芯片布置。 芯片布置可以包括芯片载体和安装在芯片载体上的芯片。 芯片可以包括至少两个芯片触点和芯片与芯片载体之间的绝缘粘合剂，以将芯片粘附到芯片载体上。 所述至少两个芯片触点可以电耦合到芯片载体。

公开(公告)号：US20140197552A1

公开(公告)日：2014-07-17

申请号：US13742456

申请日：2013-01-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel ,  Wolfram Hable ,  Manfred Mengel ,  Joachim Mahler ,  Khalil Hosseini ,  Franz-Peter Kalz

IPC: H01L23/29 ,  H01L21/56

CPC classification number: H01L23/29 ,  H01L21/56 ,  H01L23/06 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A chip arrangement is provided, the chip arrangement, including a carrier; at least one chip electrically connected to a carrier top side; an encapsulation material at least partially surrounding the at least one chip and the carrier top side, wherein the encapsulation material is formed on one or more lateral sides of the carrier; and a ceramic material disposed on a carrier bottom side, and on at least one side of the encapsulation material.

Abstract translation: 提供了芯片布置，芯片布置包括载体; 至少一个芯片电连接到载体顶侧; 至少部分地围绕所述至少一个芯片和所述载体顶侧的封装材料，其中所述封装材料形成在所述载体的一个或多个侧面上; 以及设置在载体底侧上的至少一个侧面上的陶瓷材料。

公开(公告)号：US10734352B2

公开(公告)日：2020-08-04

申请号：US16148316

申请日：2018-10-01

Applicant: Infineon Technologies AG

Inventor： Irmgard Escher-Poeppel ,  Khalil Hosseini ,  Johannes Lodermeyer ,  Joachim Mahler ,  Thorsten Meyer ,  Georg Meyer-Berg ,  Ivan Nikitin ,  Reinhard Pufall ,  Edmund Riedl ,  Klaus Schmidt ,  Manfred Schneegans ,  Patrick Schwarz

IPC: H01L23/00

Abstract: A metallic interconnection and a semiconductor arrangement including the same are described, wherein a method of manufacturing the same may include: providing a first structure including a first metallic layer having protruding first microstructures; providing a second structure including a second metallic layer having protruding second microstructures; contacting the first and second microstructures to form a mechanical connection between the structures, the mechanical connection being configured to allow fluid penetration; removing one or more non-metallic compounds on the first metallic layer and the second metallic layer with a reducing agent that penetrates the mechanical connection and reacts with the one or more non-metallic compounds; and heating the first metallic layer and the second metallic layer at a temperature causing interdiffusion of the first metallic layer and the second metallic layer to form the metallic interconnection between the structures.

公开(公告)号：US09666499B2

公开(公告)日：2017-05-30

申请号：US13664418

申请日：2012-10-31

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Edward Fuergut ,  Khalil Hosseini ,  Georg Meyer-Berg

IPC: H01L23/29 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L23/291 ,  H01L21/561 ,  H01L21/568 ,  H01L23/296 ,  H01L23/562 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are techniques related to semiconductor devices that make use of encapsulant. In one implementation, a semiconductor device may be manufactured to include at least an encapsulant that includes at least glass particles.

公开(公告)号：US09567211B2

公开(公告)日：2017-02-14

申请号：US14687835

申请日：2015-04-15

Applicant: Infineon Technologies AG

Inventor： Franz-Peter Kalz ,  Horst Theuss ,  Bernhard Winkler ,  Khalil Hosseini ,  Joachim Mahler ,  Manfred Mengel

IPC: G01B7/16 ,  B81B7/02 ,  G01L9/00 ,  G01L19/02 ,  G01L19/00 ,  B81B3/00 ,  G01L1/18

CPC classification number: B81B7/02 ,  B81B3/0021 ,  B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C2203/0154 ,  G01L1/18 ,  G01L9/0072 ,  G01L19/0092 ,  G01L19/02

Abstract: Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

Abstract translation: 微机械半导体感测装置包括被配置为产生电感测信号的微机械感测结构和设置在微机械感测结构中的压阻感测装置，所述压阻感测装置被布置成感测扰动电感测信号的机械应力，并被配置为 基于感测到的电感测信号的机械应力产生电干扰信号。