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公开(公告)号:US20180261740A1
公开(公告)日:2018-09-13
申请号:US15976311
申请日:2018-05-10
Applicant: LG Innotek Co., Ltd.
Inventor: Satoshi OZEKI , Yuichiro TANDA
CPC classification number: H01L33/60 , H01L24/97 , H01L33/486 , H01L33/54 , H01L33/62 , H01L33/642 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
Abstract: An ultraviolet light emitting device package can include a first conductive member and second conductive members; a light emitting device to emit ultraviolet light and disposed on the first conductive member; an aluminum reflector on the second conductive members, the aluminum reflector having a hollow portion in which the light emitting device is disposed, and configured to reflect ultraviolet light emitted from the light emitting device; a cover glass on the aluminum reflector and the light emitting device; and an insulator between the aluminum reflector and the second conductive members, in which the first conductive member is insulated from the light emitting device and the second conductive members, a middle area of the first conductive member corresponds to a middle area of the hollow portion, the light emitting device is disposed on the middle area of the first conductive member, the second conductive members are disposed on both sides of the first conductive member, symmetrically, and the second conductive members are electrically connected to the light emitting device, both outermost edges of the aluminum reflector protrude farther than corresponding outermost edges of the second conductive members.
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公开(公告)号:US20180261734A1
公开(公告)日:2018-09-13
申请号:US15573820
申请日:2016-05-11
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Siegfried Herrmann , Ion Stoll , Georg Roßbach
IPC: H01L33/50 , H01L33/62 , H01L33/00 , H01L33/54 , H01L33/58 , H01L33/56 , H01L33/32 , C25D13/12 , C25D13/02
CPC classification number: H01L33/505 , C25D13/02 , C25D13/12 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L33/32 , H01L33/486 , H01L33/50 , H01L33/502 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2224/96 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058 , H01L2933/0066
Abstract: A method for producing optoelectronic devices and a surface-mountable optoelectronic device are disclosed. In an embodiment the method includes applying semiconductor chips laterally adjacent one another on a carrier, wherein contact sides of the chips face the carrier, and wherein each semiconductor chip comprises contact elements for external electrical contacting which are arranged on the contact side of the semiconductor chip and applying an electrically conductive layer on at least sub-regions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically conductive layer is formed contiguously, and wherein protective elements prevent direct contact of the contact elements with the electrically conductive layer. The method further includes electrophoretically depositing a converter layer on the electrically conductive layer and removing the electrically conductive layer from regions between the converter layer and the semiconductor chips.
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公开(公告)号:US20180259166A1
公开(公告)日:2018-09-13
申请号:US15779455
申请日:2016-11-22
Applicant: LG INNOTEK CO., LTD.
Inventor: Byeong Guk MIN
CPC classification number: F21V19/002 , F21K9/00 , F21K9/20 , F21S2/00 , F21V23/06 , F21Y2103/10 , F21Y2113/13 , F21Y2115/10 , H01L25/13 , H01L33/486 , H01L33/507 , H01L33/54 , H01L33/62 , H05K1/181 , H05K2201/09236 , H05K2201/09254 , H05K2201/10106 , H05K2201/10522
Abstract: An embodiment discloses a light source module. The disclosed light source module includes: a circuit board; and a plurality of light emitting diodes arranged on the circuit board, wherein the plurality of light emitting diodes include a plurality of first light emitting diodes connected to a power input terminal, and a plurality of second light emitting diodes connected to output ends of the plurality of first light emitting diodes, wherein the plurality of first light emitting diodes are spaced apart from each other, and at least two of the plurality of second light emitting diodes are disposed between the first light emitting diodes, respectively.
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公开(公告)号:US20180240954A1
公开(公告)日:2018-08-23
申请号:US15958902
申请日:2018-04-20
Applicant: LG INNOTEK CO., LTD.
Inventor: Jae Joon YOON
CPC classification number: H01L33/62 , H01L24/97 , H01L33/38 , H01L33/44 , H01L33/486 , H01L33/54 , H01L2224/48091 , H01L2224/48247 , H01L2924/12035 , H01L2924/12041 , H01L2924/14 , H01L2933/0066 , H01L2924/00014 , H01L2924/00
Abstract: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.
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公开(公告)号:US20180234599A1
公开(公告)日:2018-08-16
申请号:US15806039
申请日:2017-11-07
Applicant: Apple Inc.
Inventor: Roya Mirhosseini-Schubert
CPC classification number: H04N5/2256 , H01L25/0753 , H01L25/13 , H01L33/504 , H01L33/507 , H01L33/54 , H01L33/58 , H01L33/60 , H01L33/62
Abstract: First and second multi-LED packages are installed on a carrier. Each package includes its own emitting diodes that are series coupled to each other and that are encased within a single, internally reflective package having two external terminals. Each package has a light output face from which light, produced by all of the emitting diodes contained therein is emitted in response to a forward current passing through the two terminals. Each package also has phosphor mediums each positioned to be stimulated by primary light of a respective one of its contained emitting diodes, and in response emit secondary wavelength-converted light that emerges from the light output face and is combined with some of the primary light to yield white light. Other embodiments are also described and claimed.
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公开(公告)号:US20180233634A1
公开(公告)日:2018-08-16
申请号:US15944328
申请日:2018-04-03
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Matthias Sabathil , Alexander Linkov , Britta Göötz , Georg Dirscherl
CPC classification number: H01L33/504 , H01L25/167 , H01L25/50 , H01L31/143 , H01L31/173 , H01L33/005 , H01L33/44 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0091
Abstract: A method of producing a light-emitting arrangement includes providing a carrier including a top side, attaching a multitude of first conversion elements on the top side of the carrier, wherein the first conversion elements are arranged in a lateral direction spaced apart from one another, attaching an encapsulation on the top side of the carrier, wherein the encapsulation covers the carrier and the first conversion elements at least sectionally, removing the encapsulation in regions between the first conversion elements, and attaching optoelectronic semiconductor chips between the first conversion elements.
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公开(公告)号:US20180226518A1
公开(公告)日:2018-08-09
申请号:US15749656
申请日:2016-08-02
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Reinhard Streitel , I-Hsin Lin-Lefebvre , Chee Eng Ooi , Ivan Galesic
IPC: H01L31/0232 , H01L31/0203 , H01L33/48 , H01L33/46 , H01L31/14 , H01L33/62 , H01L31/02 , H01L31/0216 , H01L33/60 , H01L33/54
CPC classification number: H01L31/0232 , H01L31/02005 , H01L31/0203 , H01L31/02161 , H01L31/143 , H01L33/405 , H01L33/46 , H01L33/486 , H01L33/54 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2224/92247 , H01L2933/0016 , H01L2933/005 , H01L2924/00014
Abstract: A method of manufacturing an optoelectronic component includes providing a carrier; arranging an ink on an upper side of the carrier; arranging an adhesive on the ink; and arranging the optoelectronic semiconductor chip on the adhesive. An optoelectronic component includes a carrier, an ink arranged on an upper side of the carrier, an adhesive arranged on the ink, and an optoelectronic semiconductor chip arranged on the adhesive.
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公开(公告)号:US20180219145A1
公开(公告)日:2018-08-02
申请号:US15747447
申请日:2016-07-20
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Martin Unterburger
CPC classification number: H01L33/62 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L24/13 , H01L24/24 , H01L24/82 , H01L33/44 , H01L33/486 , H01L33/54 , H01L33/647 , H01L2221/68359 , H01L2221/68377 , H01L2224/04105 , H01L2224/11602 , H01L2224/1163 , H01L2224/12105 , H01L2224/13147 , H01L2224/19 , H01L2224/2402 , H01L2224/82101 , H01L2224/82106 , H01L2924/18162 , H01L2933/0025 , H01L2933/005 , H01L2933/0066 , H01L2933/0075
Abstract: A method for producing a component having a semiconductor body includes providing the semiconductor body including a radiation passage surface and a rear side facing away from the radiation passage surface, wherein the semiconductor body comprises on the rear side a connection location for the electrical contacting of the semiconductor body, providing a composite carrier including a carrier layer and a partly cured connecting layer, applying the semiconductor body on the composite carrier, such that the connection location penetrates into the partly cured connecting layer, curing the connecting layer to form a solid composite, applying a molded body material on the composite carrier after curing the connecting layer, wherein the molded body covers side surfaces of the semiconductor body, forming a cutout through the carrier layer and the connecting layer in order to expose the connection location, and filling the cutout with an electrically conductive material.
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公开(公告)号:US10026710B2
公开(公告)日:2018-07-17
申请号:US15589427
申请日:2017-05-08
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor: Thomas Bemmerl , Simon Jerebic , Markus Pindl
IPC: H05K7/00 , H01L23/00 , H01L33/62 , H01L33/54 , H01L33/60 , H01L33/50 , H01L33/56 , H01L33/32 , H01L33/06 , H01L23/31 , H01L21/56 , H01L25/16
CPC classification number: H01L24/32 , H01L21/56 , H01L23/3142 , H01L24/83 , H01L25/167 , H01L33/06 , H01L33/32 , H01L33/44 , H01L33/507 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/29101 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83951 , H01L2924/12041 , H01L2924/1434 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2933/005 , H01L2933/0066 , H01L2933/0091 , H05K7/02 , H01L2924/00 , H01L2924/014
Abstract: An electronic arrangement comprising: a carrier; at least one connecting area on the carrier; at least one electronic component, which is fixed at least on the connecting area by a contact material; a covering area, which surrounds the connecting area on the carrier; and at least one covered region covered by a covering material; wherein the covering area is highly reflective with a reflectivity of greater than 70%, exposed regions on the connecting area and on the contact material are covered with the covering material, and the covering material is colored by titanium dioxide particles in such a way that the titanium dioxide particles are provided in the covering material in a proportion between 25 percent and 70 percent by weight, such that the covering material is highly reflective with a reflectivity of greater than 70% to minimize optical contrast between the covering area and the covered region.
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公开(公告)号:US20180198045A1
公开(公告)日:2018-07-12
申请号:US15741876
申请日:2016-07-28
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Korbinian Perzlmaier , Anna Kasprzak-Zablocka , Christine Rafael , Christian Leirer
CPC classification number: H01L33/60 , H01L33/22 , H01L33/38 , H01L33/46 , H01L33/54 , H01L2933/0025 , H01L2933/005 , H01L2933/0058
Abstract: An optoelectronic component includes a boundary layer is arranged between a semiconductor body and a metallic layer in a lateral direction, adjoins the semiconductor body at least in places, covers an active layer laterally, and has a lower refractive index compared to the semiconductor body, a metallic layer is configured to prevent the electromagnetic radiation generated during operation of the component and passes through the boundary layer from impinging on a mold body, the boundary layer is formed from a radiation-transmitting dielectric material having a refractive index of 1 to 2, and a layer thickness of the boundary layer is at least 400 nm and selected such that an amplitude of an evanescent wave, which is obtained in the event of total internal reflection at an interface between the boundary layer and the semiconductor body, is reduced to less than 37% of its original value within the boundary layer.
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