公开(公告)号：US20140332983A1

公开(公告)日：2014-11-13

申请号：US14339341

申请日：2014-07-23

Applicant: XINTEC INC.

Inventor： Yen-Shih HO ,  Tsang-Yu LIU ,  Shu-Ming CHANG ,  Yu-Lung HUANG ,  Chao-Yen LIN ,  Wei-Luen SUEN ,  Chien-Hui CHEN

IPC: H01L23/00 ,  H01L23/31

CPC classification number: H01L24/49 ,  G06K9/00053 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/3192 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L29/0657 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/05687 ,  H01L2224/0569 ,  H01L2224/06135 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/43 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48669 ,  H01L2224/48687 ,  H01L2224/4869 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10156 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/146 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A stacked chip package including a device substrate having an upper surface, a lower surface and a sidewall is provided. The device substrate includes a sensing region or device region, a signal pad region and a shallow recess structure extending from the upper surface toward the lower surface along the sidewall. A redistribution layer is electrically connected to the signal pad region and extends into the shallow recess structure. A wire has a first end disposed in the shallow recess structure and electrically connected to the redistribution layer, and a second end electrically connected to a first substrate and/or a second substrate disposed under the lower surface. A method for forming the stacked chip package is also provided.

Abstract translation: 提供了包括具有上表面，下表面和侧壁的器件衬底的堆叠芯片封装。 器件衬底包括感测区域或器件区域，信号焊盘区域和沿着侧壁从上表面向下表面延伸的浅凹陷结构。 再分配层电连接到信号焊盘区域并延伸到浅凹陷结构中。 电线具有设置在浅凹陷结构中并电连接到再分布层的第一端，以及电连接到设置在下表面下方的第一基板和/或第二基板的第二端。 还提供了一种用于形成堆叠芯片封装的方法。

公开(公告)号：US20140332908A1

公开(公告)日：2014-11-13

申请号：US14339360

申请日：2014-07-23

Applicant: XINTEC INC.

Inventor： Yen-Shih HO ,  Tsang-Yu LIU ,  Shu-Ming CHANG ,  Yu-Lung HUANG ,  Chao-Yen LIN ,  Wei-Luen SUEN ,  Chien-Hui CHEN ,  Ho-Yin YIU

IPC: H01L23/48 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L21/76802 ,  G06K9/00053 ,  H01L21/561 ,  H01L21/76877 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3192 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/05687 ,  H01L2224/0569 ,  H01L2224/06135 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48669 ,  H01L2224/48687 ,  H01L2224/4869 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10156 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A chip package including a chip is provided. The chip includes a sensing region or device region adjacent to an upper surface of the chip. A sensing array is located in the sensing region or device region and includes a plurality of sensing units. A plurality of first openings is located in the chip and correspondingly exposes the sensing units. A plurality of conductive extending portions is disposed in the first openings and is electrically connected to the sensing units, wherein the conductive extending portions extend from the first openings onto the upper surface of the chip. A method for forming the chip package is also provided.

Abstract translation: 提供了包括芯片的芯片封装。 芯片包括与芯片的上表面相邻的感测区域或器件区域。 感测阵列位于感测区域或设备区域中并且包括多个感测单元。 多个第一开口位于芯片中并且相应地暴露感测单元。 多个导电延伸部分设置在第一开口中并且电连接到感测单元，其中导电延伸部分从第一开口延伸到芯片的上表面上。 还提供了一种用于形成芯片封装的方法。

公开(公告)号：US20140154830A1

公开(公告)日：2014-06-05

申请号：US14173526

申请日：2014-02-05

Applicant: XINTEC INC

Inventor： Yu-Lung HUANG ,  Tzu-Hsiang HUNG ,  Yen-Shih HO

IPC: H01L31/18

CPC classification number: H01L31/1876 ,  H01L27/14618 ,  H01L27/14687 ,  H01L2224/13 ,  H01L2224/94

Abstract: A method for forming an image sensor chip package includes: providing a substrate having predetermined scribe lines defined thereon, wherein the predetermined scribe lines define device regions and each of the device regions has at least a device formed therein; disposing a support substrate on a first surface of the substrate; forming at least a spacer layer between the support substrate and the substrate, wherein the spacer layer covers the predetermined scribe lines; forming a package layer on a second surface of the substrate; forming conducting structures on the second surface of the substrate, wherein the conducting structures are electrically connected to the corresponding device in corresponding one of the device regions, respectively; and dicing along the predetermined scribe lines such that the support substrate is removed from the substrate and the substrate is separated into a plurality of individual image sensor chip packages.

Abstract translation: 一种用于形成图像传感器芯片封装的方法，包括：提供具有限定在其上的预定划线的基板，其中，所述预定划线限定器件区域，并且每个器件区域至少具有形成在其中的器件; 将支撑基板设置在所述基板的第一表面上; 在所述支撑基板和所述基板之间形成至少间隔层，其中所述间隔层覆盖所述预定划线; 在所述基板的第二表面上形成封装层; 在所述衬底的第二表面上形成导电结构，其中所述导电结构分别在相应的一个所述器件区域中电连接到相应的器件; 并且沿着预定的划线切割，使得支撑基板从基板移除，并且基板被分离成多个单独的图像传感器芯片封装。

公开(公告)号：US20130307137A1

公开(公告)日：2013-11-21

申请号：US13898300

申请日：2013-05-20

Applicant: XINTEC INC.

Inventor： Po-Shen LIN ,  Tsang-Yu LIU ,  Yen-Shih HO ,  Chih-Wei HO ,  Yu-Min LIANG

IPC: H01L23/498 ,  H01L21/78

CPC classification number: H01L23/498 ,  B81B7/0077 ,  H01L21/78 ,  H01L24/94 ,  H01L27/14618 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/00

Abstract: Embodiments of the present invention provide a chip package including: a semiconductor substrate having a first surface and a second surface; a device region formed in the semiconductor substrate; a dielectric layer disposed on the first surface; and a conducting pad structure disposed in the dielectric layer and electrically connected to the device region; a cover substrate disposed between the chip and the cover substrate, wherein the spacer layer, a cavity is created an surrounded by the chip and the cover substrate on the device region, and the spacer layer is in direct contact with the chip without any adhesion glue disposed between the chip and the spacer layer.

Abstract translation: 本发明的实施例提供了一种芯片封装，包括：具有第一表面和第二表面的半导体衬底; 形成在所述半导体衬底中的器件区域; 设置在所述第一表面上的电介质层; 以及导电焊盘结构，其设置在所述电介质层中并电连接到所述器件区域; 设置在所述芯片和所述盖基板之间的覆盖基板，其中所述间隔层，空腔由所述芯片和所述器件区域上的覆盖基板所围绕，并且所述间隔层与所述芯片直接接触而没有任何粘合胶 设置在芯片和间隔层之间。

公开(公告)号：US20170179330A1

公开(公告)日：2017-06-22

申请号：US15451202

申请日：2017-03-06

Applicant: XINTEC INC.

Inventor： Wei-Luen SUEN ,  Wei-Ming CHIEN ,  Po-Han LEE ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC: H01L31/18 ,  H01L31/0203 ,  H01L31/0236 ,  H01L31/02

CPC classification number: H01L31/02327 ,  H01L21/561 ,  H01L23/3114 ,  H01L31/02002 ,  H01L31/0203 ,  H01L31/02363 ,  H01L31/1804 ,  H01L2224/11

Abstract: A semiconductor structure includes a silicon substrate, a protection layer, an electrical pad, an isolation layer, a redistribution layer, a conductive layer, a passivation layer, and a conductive structure. The silicon substrate has a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface. The step structure and the tooth structure surround the concave region. The step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence. The protection layer is located on the first surface of the silicon substrate. The electrical pad is located in the protection layer and exposed through the concave region. The isolation layer is located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure.

公开(公告)号：US20170148752A1

公开(公告)日：2017-05-25

申请号：US15351309

申请日：2016-11-14

Applicant: XINTEC INC.

Inventor： Yen-Shih HO ,  Chia-Sheng LIN ,  Po-Han LEE ,  Wei-Luen SUEN

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/02 ,  H01L24/03 ,  H01L24/13 ,  H01L2224/0214 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/0231 ,  H01L2224/0235 ,  H01L2224/0239 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/13022 ,  H01L2224/13026 ,  H01L2224/131 ,  H01L2924/01013 ,  H01L2924/06 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/00012

Abstract: A chip package includes a substrate, an isolation layer, a redistribution layer, a passivation layer, a first conductive layer, a second conductive layer, and a conductive structure. The isolation layer is located on the substrate. The redistribution layer is located on the isolation layer. The passivation layer is located on the isolation layer and the redistribution layer. The passivation layer has an opening, a wall surface that surrounds the opening, and a surface that faces away from the isolation layer. A portion of the redistribution layer is exposed through the opening. The first conductive layer is located on the redistribution layer that is in the opening, and extends to the wall surface and the surface of the passivation layer. The second conductive layer covers the first conductive layer. The conductive structure is located on the second conductive layer and protrudes from the passivation layer.

公开(公告)号：US20170117242A1

公开(公告)日：2017-04-27

申请号：US15297490

申请日：2016-10-19

Applicant: XINTEC INC.

Inventor： Yen-Shih HO ,  Tsang-Yu LIU ,  Po-Han LEE ,  Chi-Chang LIAO

IPC: H01L23/00

CPC classification number: H01L24/16 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/06181 ,  H01L2224/08265 ,  H01L2224/1403 ,  H01L2224/14155 ,  H01L2224/16265 ,  H01L2224/1703 ,  H01L2224/171 ,  H01L2224/29011 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/81815 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/1207 ,  H01L2924/146

Abstract: A chip package is provided. The chip package includes a substrate. The substrate includes a sensing region or device region. The chip package also includes a first conducting structure disposed on the substrate. The first conducting structure is electrically connected to the sensing region or device region. The chip package further includes a passive element vertically stacked on the substrate. The passive element and the first conducting structure are positioned side by side.

公开(公告)号：US20170110495A1

公开(公告)日：2017-04-20

申请号：US15277184

申请日：2016-09-27

Applicant: XINTEC INC.

Inventor： Jyun-Liang WU ,  Chia-Sheng LIN ,  Po-Han LEE ,  Yen-Shih HO

IPC: H01L27/146 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L27/14618 ,  H01L21/563 ,  H01L24/03 ,  H01L24/08 ,  H01L2224/0231 ,  H01L2224/0237

Abstract: A chip package includes a chip, a dam element, and a height-increasing element. The chip has an image sensing area, a first surface, and a second surface opposite to the first surface. The image sensing area is located on the first surface of the chip. The dam element is located on the first surface of the chip and surrounds the image sensing area. The height-increasing element is located on the dam element, such that the dam element is between the height-increasing element and the chip.

公开(公告)号：US20160329283A1

公开(公告)日：2016-11-10

申请号：US15140289

申请日：2016-04-27

Applicant: XINTEC INC.

Inventor： Yu-Tung CHEN ,  Chien-Min LIN ,  Chuan-Jin SHIU ,  Chih-Wei HO ,  Yen-Shih HO

IPC: H01L23/528 ,  H01L23/00 ,  H01L21/768 ,  H01L21/027 ,  H01L23/522

CPC classification number: H01L23/5283 ,  H01L21/0271 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0345 ,  H01L2224/0557

Abstract: A semiconductor structure includes a first substrate, a second substrate, a dam layer, a photoresist layer, and a conductive layer. The first substrate has a conductive pad. The second substrate has a through via, a sidewall surface surrounding the through via, a first surface, and a second surface opposite to the first surface. The through via penetrates through the first and second surfaces. The conductive pad is aligned with the through via. The dam layer is located between the first substrate and the second surface. The dam layer protrudes toward the through via. The photoresist layer is located on the first surface, the sidewall surface, the dam layer protruding toward the through via, and between the conductive pad and the dam layer protruding toward the through via. The conductive layer is located on the photoresist layer and the conductive pad.

Abstract translation: 半导体结构包括第一基板，第二基板，阻挡层，光致抗蚀剂层和导电层。 第一基板具有导电垫。 第二基板具有通孔，围绕通孔的侧壁表面，第一表面和与第一表面相对的第二表面。 通孔穿过第一和第二表面。 导电垫与通孔对齐。 坝层位于第一基板和第二表面之间。 坝层朝向通孔突出。 光致抗蚀剂层位于第一表面上，侧壁表面，阻挡层朝向通孔突出，并且在导电垫和阻挡层之间朝向通孔突出。 导电层位于光致抗蚀剂层和导电垫上。

公开(公告)号：US20160284751A1

公开(公告)日：2016-09-29

申请号：US15062020

申请日：2016-03-04

Applicant: XINTEC INC.

Inventor： Yen-Shih HO ,  Tsang-Yu LIU ,  Po-Han LEE ,  Jiun-Yen LAI

IPC: H01L27/146

CPC classification number: H01L27/14618 ,  A61B5/1172 ,  B81B7/0067 ,  B81B7/007 ,  B81B2207/096 ,  G06K9/0004 ,  H01L21/76898 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L27/14632 ,  H01L27/14687 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0362 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/0579 ,  H01L2224/058 ,  H01L2224/11 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16245 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/92242 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/014 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/0665

Abstract: This present invention provides a chip scale sensing chip package, comprising a sensing chip having a first top surface and a first bottom surface opposite to the first top surface, which comprises a sensing device near the first top surface, a plurality of conductive pads near the first top surface and adjacent to the sensing device; a plurality of through holes on the first top surface and each of the through holes exposing one of the conductive pads corresponding to with each other; a plurality of conductive structure formed on the first bottom surface; and a re-distribution layer (RDL) formed on the first bottom surface and the first through holes to respectively connect to each of the conductive pads and each of the conductive structures; a spacing layer, surrounding the sensing chip, formed on the sensing chip. The spacing layer has a second top surface, a second bottom surface and an opening through the second top surface and the second bottom surface, wherein the opening corresponds to the sensing device and the inner wall of the opening remains a desired distance d (d>0) with the sensing device; and a first adhesive layer sandwiched between the second bottom surface of the spacing layer and the first top surface of the sensing chip.

Abstract translation: 本发明提供了一种芯片尺度感测芯片封装，其包括具有第一顶表面和与第一顶表面相对的第一底表面的感测芯片，其包括靠近第一顶表面的感测装置，靠近第一顶表面的多个导电垫 第一顶表面并邻近感测装置; 所述第一顶表面上的多个通孔和每个所述通孔暴露彼此对应的所述导电焊盘之一; 形成在所述第一底面上的多个导电结构; 以及形成在所述第一底表面上的再分布层（RDL）和所述第一通孔，以分别连接到每个所述导电焊盘和每个所述导电结构; 围绕感测芯片的间隔层，形成在感测芯片上。 间隔层具有第二顶表面，第二底表面和穿过第二顶表面和第二底表面的开口，其中开口对应于感测装置，并且开口的内壁保持期望的距离d（d> 0）与感测装置; 以及夹在间隔层的第二底表面和感测芯片的第一顶表面之间的第一粘合剂层。