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公开(公告)号：US20170352716A1
公开(公告)日：2017-12-07
申请号：US15382077
申请日：2016-12-16
发明人： Chungseok LEE , Donghee PARK , Cheolgeun AN , Jihoon OH , Euiyun JANG , Jeongho HWANG
CPC分类号： H01L27/3276 , H01L24/29 , H01L24/32 , H01L51/0096 , H01L2224/13144 , H01L2224/16238 , H01L2224/271 , H01L2224/29005 , H01L2224/29028 , H01L2224/29083 , H01L2224/29084 , H01L2224/2929 , H01L2224/29293 , H01L2224/2939 , H01L2224/29391 , H01L2224/294 , H01L2224/29439 , H01L2224/29444 , H01L2224/29447 , H01L2224/29455 , H01L2224/29499 , H01L2224/32148 , H01L2224/32225 , H01L2224/32238 , H01L2224/743 , H01L2224/81191 , H01L2224/831 , H01L2224/83192 , H01L2224/83201 , H01L2224/83203 , H01L2224/83345 , H01L2224/83851 , H01L2224/83862 , H01L2251/5369 , H01L2924/07811 , H01L2924/1426 , H01L2924/00014 , H01L2924/0665 , H01L2924/00012
摘要： An anisotropic conductive film includes a conductive layer; a first resin insulating layer over a first surface of the conductive layer; and a second resin insulating layer over a second surface of the conductive layer, wherein the conductive layer comprises a plurality of conductive particles and a nano fiber connecting the plurality of conductive particles to each other, each of the plurality of conductive particles comprising a plurality of needle-shaped protrusions having a conical shape, and wherein the first resin insulating layer and the second resin insulating layer comprise a same material and have different thicknesses.
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公开(公告)号：US20150235979A1
公开(公告)日：2015-08-20
申请号：US14181616
申请日：2014-02-14
CPC分类号： H01L24/17 , H01L21/561 , H01L21/563 , H01L24/05 , H01L24/11 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L2224/03462 , H01L2224/0347 , H01L2224/04026 , H01L2224/05571 , H01L2224/05647 , H01L2224/11462 , H01L2224/1147 , H01L2224/13005 , H01L2224/13147 , H01L2224/2732 , H01L2224/27416 , H01L2224/27418 , H01L2224/27515 , H01L2224/27632 , H01L2224/2784 , H01L2224/29023 , H01L2224/29028 , H01L2224/29076 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29388 , H01L2224/32147 , H01L2224/83191 , H01L2224/83203 , H01L2224/83815 , H01L2224/8385 , H01L2224/83885 , H01L2224/94 , H01L2924/00011 , H01L2924/01322 , H01L2924/12042 , H01L2924/00 , H01L2924/00014 , H01L2924/206 , H01L2924/0665 , H01L2224/81805 , H01L2924/014 , H01L2924/00012 , H01L2224/03 , H01L2224/27
摘要： Electronic devices including solder bumps embedded in a pre-applied coating of underfill material and/or solder resist are fabricated, thereby improving chip-package interaction reliability. Underfill can be directly applied to a wafer, enabling increased filler loadings. Passages formed in the underfill and/or solder resist coating expose electrically conductive pads or metal pillars. Such passages can be filled with molten solder to form the solder bumps.
摘要翻译： 制造包括嵌入在预填充材料和/或阻焊剂的预涂层中的焊料凸块的电子器件，从而提高芯片封装相互作用的可靠性。 底部填充物可以直接施加到晶片上，从而增加填料的填充量。 在底部填充物和/或阻焊涂层中形成的通道暴露导电垫或金属柱。 可以用熔融焊料填充这样的通道以形成焊料凸块。
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公开(公告)号：US08722528B2
公开(公告)日：2014-05-13
申请号：US13597500
申请日：2012-08-29
IPC分类号： H01L21/70
CPC分类号： H01L23/49513 , H01L21/6835 , H01L22/10 , H01L23/28 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/83 , H01L2221/68327 , H01L2221/68381 , H01L2224/03002 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/04026 , H01L2224/04042 , H01L2224/05082 , H01L2224/05083 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05551 , H01L2224/05578 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/27002 , H01L2224/27462 , H01L2224/27464 , H01L2224/29018 , H01L2224/29028 , H01L2224/2908 , H01L2224/29082 , H01L2224/29111 , H01L2224/29147 , H01L2224/29155 , H01L2224/32245 , H01L2224/48245 , H01L2224/48247 , H01L2224/83447 , H01L2224/8346 , H01L2224/83815 , H01L2224/94 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/01022 , H01L2924/01028 , H01L2924/013 , H01L2924/01402 , H01L2224/03 , H01L2224/27 , H01L2924/01083 , H01L2924/01051 , H01L2924/3512 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Standoff structures that can be used on the die backside of semiconductor devices and methods for making the same are described. The devices contain a silicon substrate with an integrated circuit on the front side of the substrate and a backmetal layer on the backside of the substrate. Standoff structures made of Cu of Ni are formed on the backmetal layer and are embedded in a Sn-containing layer that covers the backmetal layer and the standoff structures. The standoff structures can be isolated from each other so that they are not connected and can also be configured to substantially mirror indentations in the leadframe that is attached to the Sn-containing layer. Other embodiments are described.
摘要翻译： 描述了可用于半导体器件的模具背面的间隔结构及其制造方法。 这些器件包含在衬底前侧具有集成电路的硅衬底和衬底背面上的后金属层。 在后金属层上形成由Cu的Cu构成的间隔结构，并且嵌入到覆盖后金属层和间隔结构的含Sn层中。 间隔结构可以彼此隔离，使得它们不连接，并且还可以被配置为基本上镜像连接到含Sn层的引线框架中的凹陷。 描述其他实施例。
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公开(公告)号：US20120322211A1
公开(公告)日：2012-12-20
申请号：US13597500
申请日：2012-08-29
IPC分类号： H01L21/60
CPC分类号： H01L23/49513 , H01L21/6835 , H01L22/10 , H01L23/28 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/48 , H01L24/83 , H01L2221/68327 , H01L2221/68381 , H01L2224/03002 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/04026 , H01L2224/04042 , H01L2224/05082 , H01L2224/05083 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05551 , H01L2224/05578 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/27002 , H01L2224/27462 , H01L2224/27464 , H01L2224/29018 , H01L2224/29028 , H01L2224/2908 , H01L2224/29082 , H01L2224/29111 , H01L2224/29147 , H01L2224/29155 , H01L2224/32245 , H01L2224/48245 , H01L2224/48247 , H01L2224/83447 , H01L2224/8346 , H01L2224/83815 , H01L2224/94 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/01022 , H01L2924/01028 , H01L2924/013 , H01L2924/01402 , H01L2224/03 , H01L2224/27 , H01L2924/01083 , H01L2924/01051 , H01L2924/3512 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Standoff structures that can be used on the die backside of semiconductor devices and methods for making the same are described. The devices contain a silicon substrate with an integrated circuit on the front side of the substrate and a backmetal layer on the backside of the substrate. Standoff structures made of Cu of Ni are formed on the backmetal layer and are embedded in a Sn-containing layer that covers the backmetal layer and the standoff structures. The standoff structures can be isolated from each other so that they are not connected and can also be configured to substantially mirror indentations in the leadframe that is attached to the Sn-containing layer. Other embodiments are described.
摘要翻译： 描述了可用于半导体器件的模具背面的间隔结构及其制造方法。 这些器件包含在衬底前侧具有集成电路的硅衬底和衬底背面上的后金属层。 在后金属层上形成由Cu的Cu构成的间隔结构，并且嵌入到覆盖后金属层和间隔结构的含Sn层中。 间隔结构可以彼此隔离，使得它们不连接，并且还可以被配置为基本上镜像连接到含Sn层的引线框架中的凹陷。 描述其他实施例。
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公开(公告)号：US11990430B2
公开(公告)日：2024-05-21
申请号：US17186742
申请日：2021-02-26
发明人： Chen-Yu Tsai , Ku-Feng Yang , Wen-Chih Chiou
IPC分类号： H01L23/00
CPC分类号： H01L24/03 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/08 , H01L24/32 , H01L2224/03013 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0355 , H01L2224/03612 , H01L2224/03622 , H01L2224/0381 , H01L2224/05083 , H01L2224/05084 , H01L2224/05546 , H01L2224/05564 , H01L2224/08145 , H01L2224/08225 , H01L2224/2781 , H01L2224/27831 , H01L2224/29006 , H01L2224/29027 , H01L2224/29028 , H01L2224/32145 , H01L2224/32225
摘要： A method includes forming a conductive pad over an interconnect structure of a wafer, forming a capping layer over the conductive pad, forming a dielectric layer covering the capping layer, and etching the dielectric layer to form an opening in the dielectric layer. The capping layer is exposed to the opening. A wet-cleaning process is then performed on the wafer. During the wet-cleaning process, a top surface of the capping layer is exposed to a chemical solution used for performing the wet-cleaning process. The method further includes depositing a conductive diffusion barrier extending into the opening, and depositing a conductive material over the conductive diffusion barrier.
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公开(公告)号：US20240155892A1
公开(公告)日：2024-05-09
申请号：US18235275
申请日：2023-08-17
发明人： Junhyun LEE , Dong-Ho KIM , Seongyun LEE
IPC分类号： H10K59/131 , H01L23/00 , H10K59/90
CPC分类号： H10K59/131 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H10K59/90 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05686 , H01L2224/06152 , H01L2224/29028 , H01L2224/32145 , H01L2224/32225
摘要： A display device includes: a substrate including a display area and a pad area, the pad area being located around the display area and adjacent to one side of the display area; a flexible printed circuit board disposed in the pad area on the substrate and including a first bump part and a plurality of test points connected to the first bump part; a driving integrated circuit disposed in the pad area on the substrate, spaced apart from the flexible printed circuit board and including a second bump part; a signal line disposed in the pad area on the substrate and connecting the first bump part and the second bump part; and a plurality of control parts disposed in the pad area on the substrate and connected to the signal line between the first bump part and the second bump part.
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37.发明授权公开(公告)号：US11978840B2
公开(公告)日：2024-05-07
申请号：US17438953
申请日：2021-07-23
发明人： Xueru Mei
CPC分类号： H01L33/62 , H01L24/05 , H01L24/29 , H01L24/32 , H01L25/167 , H01L2224/13016 , H01L2224/13021 , H01L2224/29016 , H01L2224/29028 , H01L2224/32145 , H01L2924/12041 , H01L2933/0066
摘要： Disclosed are a micro light emitting diode display panel, a manufacturing method thereof and a display device. The embodiment micro light emitting diode display panel includes a first metal layer and a second metal layer; the first metal layer includes a source electrode, a drain electrode and a power line; the second metal layer includes a first bonding electrode and a second bonding electrode, and the first bonding electrode is electrically connected to the source electrode through the first via hole, and the second bonding electrode is electrically connected to the power line through the second via hole; the first via hole and the second via hole are both provided with a supporting column.
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38.发明公开公开(公告)号：US20240079365A1
公开(公告)日：2024-03-07
申请号：US18373048
申请日：2023-09-26
发明人： Seungryong HAN , Yeonghyeon SEO , Sangmoo PARK , Jinyoung KIM , Byunghoon LEE
CPC分类号： H01L24/29 , H01L24/27 , H01L24/30 , H01L24/32 , H01L24/83 , H01L25/167 , H01L2224/27005 , H01L2224/29028 , H01L2224/29116 , H01L2224/29144 , H01L2224/29155 , H01L2224/2919 , H01L2224/30131 , H01L2224/32145 , H01L2224/83203
摘要： A display module is provided. The display module includes: a substrate partitioned into a plurality of pixel regions and including a plurality of electrode pads disposed in the pixel regions; a bonding member including an adhesive layer stacked on one surface of the substrate and a plurality of conductive balls disposed in the adhesive layer; and a plurality of light emitting diodes including electrodes connected to the plurality of electrode pads by the plurality of conductive balls, in which the plurality of conductive balls are patterned as a conductive region corresponding to the plurality of electrode pads.
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公开(公告)号：US20230387051A1
公开(公告)日：2023-11-30
申请号：US18446028
申请日：2023-08-08
发明人： Chen-Yu Tsai , Ku-Feng Yang , Wen-Chih Chiou
IPC分类号： H01L23/00
CPC分类号： H01L24/03 , H01L24/29 , H01L24/27 , H01L24/05 , H01L2224/27831 , H01L2224/03622 , H01L2224/03013 , H01L2224/0381 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/03612 , H01L2224/0355 , H01L2224/05084 , H01L2224/05083 , H01L2224/05546 , H01L2224/05564 , H01L2224/29006 , H01L2224/29028 , H01L2224/29027 , H01L24/08 , H01L24/32 , H01L2224/32145 , H01L2224/32225 , H01L2224/08145 , H01L2224/08225 , H01L2224/2781
摘要： A method includes forming a conductive pad over an interconnect structure of a wafer, forming a capping layer over the conductive pad, forming a dielectric layer covering the capping layer, and etching the dielectric layer to form an opening in the dielectric layer. The capping layer is exposed to the opening. A wet-cleaning process is then performed on the wafer. During the wet-cleaning process, a top surface of the capping layer is exposed to a chemical solution used for performing the wet-cleaning process. The method further includes depositing a conductive diffusion barrier extending into the opening, and depositing a conductive material over the conductive diffusion barrier.
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公开(公告)号：US20180130766A1
公开(公告)日：2018-05-10
申请号：US15861631
申请日：2018-01-03
申请人： Invensas Corporation
发明人： Belgacem Haba
IPC分类号： H01L23/00
CPC分类号： H01L24/83 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/75 , H01L24/81 , H01L24/92 , H01L24/94 , H01L2224/0401 , H01L2224/0557 , H01L2224/05573 , H01L2224/056 , H01L2224/05611 , H01L2224/05616 , H01L2224/05687 , H01L2224/113 , H01L2224/13022 , H01L2224/131 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13193 , H01L2224/1403 , H01L2224/1601 , H01L2224/16105 , H01L2224/16146 , H01L2224/271 , H01L2224/2733 , H01L2224/2741 , H01L2224/27436 , H01L2224/27849 , H01L2224/29027 , H01L2224/29028 , H01L2224/2929 , H01L2224/29291 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29393 , H01L2224/29499 , H01L2224/3201 , H01L2224/32105 , H01L2224/32145 , H01L2224/73104 , H01L2224/73204 , H01L2224/75102 , H01L2224/8109 , H01L2224/81101 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/81815 , H01L2224/8309 , H01L2224/83101 , H01L2224/83143 , H01L2224/83193 , H01L2224/83203 , H01L2224/83815 , H01L2224/83851 , H01L2224/83862 , H01L2224/8388 , H01L2224/9211 , H01L2224/9212 , H01L2224/92125 , H01L2224/94 , H01L2924/01006 , H01L2924/014 , H01L2924/381 , H01L2924/0665 , H01L2924/07025 , H01L2924/0675 , H01L2924/0635 , H01L2924/00012 , H01L2924/069 , H01L2224/83 , H01L2924/00014 , H01L2224/81 , H01L2224/11 , H01L2224/27
摘要： An adhesive with self-connecting interconnects is provided. The adhesive layer provides automatic 3D joining of microelectronic components with a conductively self-adjusting anisotropic matrix. In an implementation, the adhesive matrix automatically makes electrical connections between two surfaces that have opposing electrical contacts, and bonds the two surfaces together. Conductive members in the adhesive matrix are aligned to automatically establish electrical connections between at least partially aligned contacts on each of the two surfaces while providing nonconductive adhesion between parts of the two surfaces lacking aligned contacts. An example method includes forming an adhesive matrix between two surfaces to be joined, including conductive members anisotropically aligned in an adhesive medium, then pressing the two surfaces together to automatically connect corresponding electrical contacts that are at least partially aligned on the two surfaces. The adhesive medium in the matrix secures the two surfaces together.
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