摘要:
A cleaning method and related apparatus for cleaning semiconductor screening masks using an aqueous alkali detergent solution applied under high pressure simultaneously from both sides of the mask, followed by a drying step that uses air knives to blow off the mask surface any residual cleaner solution.
摘要:
The present invention relates generally to a new apparatus and method for screening using electrostatic adhesion. More particularly, the invention encompasses an apparatus that uses an electrostatic charge during the screening process for a semiconductor substrate. Basically, a backing layer is adhered to a green ceramic sheet using an electrostatic charge, while the green ceramic sheet is processed.
摘要:
The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
摘要:
Apparatus and methods are provided for high density packaging of semiconductor chips using silicon space transformer chip level package structures, which allow high density chip interconnection and/or integration of multiple chips or chip stacks high I/O interconnection and heterogeneous chip or function integration.
摘要:
An electronic apparatus includes an electronic component electrically connected to a substrate positioned beneath the electronic component. A member includes a plurality of decoupling capacitors having different voltages, and the decoupling capacitors are electrically connected to the electronic component. A plurality of voltage planes in the member are electrically connected to the decoupling capacitors. The decoupling capacitors, via the voltage planes in the member, provide different voltages to the voltage planes and thus the electronic component.
摘要:
Apparatus and methods are provided for high density packaging of semiconductor chips using silicon space transformer chip level package structures, which allow high density chip interconnection and/or integration of multiple chips or chip stacks high I/O interconnection and heterogeneous chip or function integration.
摘要:
A method for forming interconnects onto attachment points of a wafer includes the steps of providing a mold with a plurality of cavities having a predetermined shape, depositing a release agent on surfaces of the cavities, filling the cavities with an interconnect material to form the interconnects, removing the release agent from the mold, and attaching the interconnects to the attachment points of the wafer. An adhesive layer can optionally be deposited in addition to the release layer. The adhesive layer can be used, for example, to bond the chip to a package.
摘要:
The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.
摘要:
Techniques for electronic device fabrication are provided. In one aspect, an electronic device is provided. The electronic device comprises at least one interposer structure having one or mole vias and a plurality of decoupling capacitors integrated therein, the at least one interposer structure being configured to allow for one or more of the plurality of decoupling capacitors to be selectively deactivated. In another aspect, a method of fabricating an electronic device comprising at least one interposer structure having one or more vias and a plurality of decoupling capacitors integrated therein comprises the following step. One or more of the plurality of decoupling capacitors are selectively deactivated.