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公开(公告)号:US20180243531A1
公开(公告)日:2018-08-30
申请号:US15963813
申请日:2018-04-26
Inventor: Xiaoping Guo , Richard E. Stehr
IPC: A61M25/00 , B29C47/02 , A61M25/01 , B29C61/00 , B29D23/00 , B29C63/00 , B29K27/18 , B29K105/16 , B29L31/00
CPC classification number: A61M25/005 , A61M25/0009 , A61M25/0012 , A61M25/0043 , A61M25/0045 , A61M25/0108 , A61M2025/0059 , A61M2205/32 , B29C48/151 , B29C61/006 , B29C63/0069 , B29D23/001 , B29K2027/18 , B29K2105/16 , B29L2031/7542
Abstract: A method of manufacturing a catheter shaft includes the steps of forming an inner layer of a first polymeric material, forming a plait matrix layer including a second polymeric material about the inner layer, and forming an outer layer of a third polymeric material about the plait matrix layer. The plait matrix layer includes a braided wire mesh partially or fully embedded within the second polymeric material, which is different from at least one of the first polymeric material forming the inner layer and the third polymeric material forming the outer layer. The second polymeric material has a higher yield strain and/or a lower hardness than at least the first polymeric material, and preferably both the first and the third polymeric materials. The first polymeric material and the third polymeric material may be different or the same. The catheter shaft may be formed by stepwise extrusion, co-extrusion, and/or reflow processes.
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公开(公告)号:US10012348B2
公开(公告)日:2018-07-03
申请号:US15040413
申请日:2016-02-10
Applicant: UNITED STATES GYPSUM COMPANY
Inventor: Suman Sinha Ray , Ajith Rao
IPC: F16L59/065 , F17C3/08 , B29C70/58 , B29C70/88 , E04C2/284 , E04C2/30 , E04B2/00 , B29K105/00 , B29K105/04 , B29K105/16 , B29L31/00
CPC classification number: F17C3/08 , B29C70/58 , B29C70/88 , B29K2105/04 , B29K2105/16 , B29K2105/251 , B29L2031/776 , C04B30/02 , C04B2111/00663 , C04B2111/28 , E04C2/049 , E04C2/284 , E04C2/30 , E04C2/44 , F16L59/065 , C04B14/043 , C04B14/16 , C04B14/18 , C04B14/42 , C04B14/46 , C04B20/008 , C04B22/143 , C04B28/145 , C04B38/0054 , C04B28/16
Abstract: A vacuum insulated panel (VIP) and a method of manufacturing a VIP includes a rigid core material having high insulation and low conductivity properties. The rigid core may be made of an inorganic material that effectively mimics a porous silica core material. The core material includes large particles of an inorganic material having a diameter in a range of 10 μm to 50 μm. A portion of these large particles may be ground into small particles having a diameter of less than 1 μm. The small particles are mixed with a portion of the large particles to form a core material which is then mixed with a fiber skeleton and compacted under vacuum along with a fibrous skeleton for structure. The resulting structure provides a porosity ranging from 10 nm to 1 μm in diameter.
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公开(公告)号:US20180178487A1
公开(公告)日:2018-06-28
申请号:US15354674
申请日:2016-11-17
Applicant: Wellmade Floor Covering Int'l Inc.
IPC: B32B7/04 , B29C47/00 , B29C43/24 , E04F15/10 , B32B27/30 , B32B27/06 , B29C47/06 , B29C43/28 , E04F15/02 , E04F15/04 , E04C2/20 , B29C47/92 , B29L31/10 , B29K509/00 , B29K105/00 , B29K105/16 , B29K27/06
CPC classification number: B32B7/04 , B29C43/24 , B29C43/28 , B29C48/0011 , B29C48/0014 , B29C48/0021 , B29C48/022 , B29C48/07 , B29C48/21 , B29C48/92 , B29C2948/92704 , B29K2027/06 , B29K2105/0038 , B29K2105/0044 , B29K2105/16 , B29K2509/00 , B29L2031/10 , B29L2031/732 , B32B27/06 , B32B27/304 , B32B2419/00 , B32B2419/04 , E04C2/20 , E04F15/02044 , E04F15/04 , E04F15/107 , E04F2015/0205
Abstract: A plank is described and a method for manufacturing the plank. The plank can be produced by mixing polyvinyl chloride powder, coarse whiting and light calcium compound powder, stabilizer, polyethylene wax, internal lubricant, plasticizer, and impact modifier together, and stirring this mixture. The mixture is then extruded through an extruder compound to form a plastic composite base material. A surface layer is then tiled onto the plastic composite base material using thermal compression, without the use of intermediate adhesive materials. The surface layer can be embossed when it is combined with the mixture being extruded.
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公开(公告)号:US10005887B2
公开(公告)日:2018-06-26
申请号:US14653500
申请日:2013-12-18
Applicant: SOLVAY SPECIALTY POLYMERS USA, LLC
Inventor: Atul Bhatnagar , Hong Chen , Theodore Moore
IPC: C08G75/23 , C08L81/06 , C08K3/34 , H04M1/02 , C08K7/14 , B29C45/14 , B29K81/00 , B29K105/16 , B29K509/08 , B29K509/02 , B29L9/00 , B29L31/34
CPC classification number: C08G75/23 , B29C45/14 , B29K2081/06 , B29K2105/16 , B29K2509/02 , B29K2509/08 , B29K2995/0058 , B29K2995/0069 , B29K2995/0077 , B29K2995/0089 , B29L2009/00 , B29L2031/3481 , C08K3/013 , C08K3/34 , C08K7/14 , C08L81/06 , H04M1/0202 , Y10T428/1397
Abstract: The present invention relates a mobile electronic device comprising at least one part made of a polymer composition comprising for more than 80% by weight (% wt.) relative to the total weight of the composition (C) of an aromatic polysulfone polymer comprising a residual chlorine content in an amount of less than 25 μeq/g polymer.
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公开(公告)号:US20180169914A1
公开(公告)日:2018-06-21
申请号:US15840341
申请日:2017-12-13
Applicant: Martin BALL , Christian RYMER
Inventor: Martin BALL , Christian RYMER
CPC classification number: B29C44/12 , B29C44/14 , B29C44/3484 , B29C44/353 , B29K2027/06 , B29K2105/0038 , B29K2105/04 , B29K2105/16 , B29K2623/06 , B29K2623/12 , B29K2633/04 , B29K2705/00 , B29K2711/12 , B29K2711/14 , B29K2713/00 , B29K2995/002 , B29L2031/732 , B32B5/20 , B41M3/001 , B41M3/18 , B44C1/00 , B44C3/025 , C08J9/0023 , C08J9/101 , C08J9/103 , C08J2327/06 , D06N7/0002 , D06N7/0015 , D06N2205/04
Abstract: A method of forming a surface covering includes supplying a surface covering raw material. The surface covering raw material includes a substrate and a foamable layer formed on the substrate. A foaming inhibiting composition is applied in a predetermined pattern to the foamable layer formed on the substrate. The foaming inhibiting composition is a non-aqueous composition.
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公开(公告)号:US20180166577A1
公开(公告)日:2018-06-14
申请号:US15890797
申请日:2018-02-07
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor: John B. CAMPI, JR. , Robert J. GAUTHIER, JR. , Rahul MISHRA , Souvick MITRA , Mujahid MUHAMMAD
CPC classification number: H01L29/7856 , B29C37/0025 , B29C48/21 , B29C48/49 , B29K2023/12 , B29K2105/16 , B29K2507/04 , B29K2995/0005 , B29K2995/0007 , B29L2009/003 , B29L2009/005 , B29L2031/34 , B32B3/08 , B32B7/02 , B32B27/00 , B32B27/08 , B32B27/28 , B32B27/306 , B32B27/308 , B32B27/32 , B32B27/34 , B32B27/36 , B32B2262/106 , B32B2264/105 , B32B2264/12 , B32B2270/00 , B32B2274/00 , B32B2307/202 , B32B2307/204 , B32B2307/206 , B32B2307/518 , B32B2307/732 , B32B2457/16 , H01G4/005 , H01G4/14 , H01G4/228 , H01G4/30 , H01G4/33 , H01L21/26513 , H01L21/266 , H01L21/823412 , H01L21/823431 , H01L21/823475 , H01L21/823481 , H01L21/823493 , H01L27/0886 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/0696 , H01L29/086 , H01L29/0865 , H01L29/0869 , H01L29/0882 , H01L29/0886 , H01L29/1045 , H01L29/1095 , H01L29/4236 , H01L29/42376 , H01L29/4238 , H01L29/42392 , H01L29/66681 , H01L29/66704 , H01L29/66712 , H01L29/66734 , H01L29/66795 , H01L29/7802 , H01L29/7809 , H01L29/7811 , H01L29/7816 , H01L29/7825 , H01L29/7851 , H01L2029/7858
Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
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公开(公告)号:US09991505B2
公开(公告)日:2018-06-05
申请号:US14379924
申请日:2013-02-14
Applicant: Sumitomo Metal Mining Co., Ltd.
Inventor: Rei Kokado , Kensaku Mori , Masanori Takagi , Tetsutaro Hayashi
IPC: H01M4/1391 , H01M4/62 , H01M10/0525 , H01M4/485 , B29B7/00 , B29C43/00 , B29C43/02 , H01M4/04 , H01M4/36 , C01G53/00 , H01M4/525 , H01M4/02 , H01M4/131 , H01M10/052 , B29K105/16 , B29K509/00 , B29L31/34
CPC classification number: H01M4/1391 , B29B7/005 , B29C43/003 , B29C43/02 , B29K2105/16 , B29K2509/00 , B29K2995/0005 , B29L2031/3468 , C01G53/42 , C01G53/50 , C01P2004/61 , C01P2004/62 , C01P2006/12 , C01P2006/40 , H01M4/043 , H01M4/131 , H01M4/364 , H01M4/485 , H01M4/525 , H01M4/622 , H01M4/624 , H01M10/052 , H01M10/0525 , H01M2004/028 , H01M2220/20
Abstract: Provided is a positive-electrode material for nonaqueous-electrolyte secondary batteries, the positive-electrode material being capable of achieving both high capacity and high output when used for a positive electrode for nonaqueous-electrolyte secondary batteries. Also, provided is a method for manufacturing the positive-electrode material for nonaqueous-electrolyte secondary batteries, wherein a lithium metal composite oxide powder is mixed with lithium tungstate, the lithium metal composite oxide powder being represented by a general formula LizNi1-x-yCoxMyO2 (wherein 0.10≤x≤0.35, 0≤y≤0.35, 0.97≤z≤1.20, and M is an addition element and at least one element selected from Mn, V, Mg, Mo, Nb, Ti, and Al) and comprising primary particles and secondary particles composed of aggregation of the primary particles.
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48.
公开(公告)号:US09982164B2
公开(公告)日:2018-05-29
申请号:US15240157
申请日:2016-08-18
Applicant: Carbon, Inc.
Inventor: Jason P. Rolland , Kai Chen , Justin Poelma , James Goodrich , Robert Pinschmidt , Joseph M. DeSimone , Lloyd M. Robeson
IPC: C08F2/46 , C08F2/50 , C08G61/04 , C09D175/08 , G03F7/00 , B29C67/00 , B29D11/00 , B29C35/08 , C08K3/00 , C08K5/00 , C08L75/04 , C09D135/02 , C09D175/04 , G03F7/027 , G03F7/038 , G03F7/075 , G03F7/38 , B33Y10/00 , B33Y70/00 , B29K75/00 , B29K105/04 , B29L11/00 , B29L31/10 , B29K105/00 , B29K105/16 , B29K509/00 , B33Y80/00 , B29L31/00
CPC classification number: C09D175/08 , B29C35/0805 , B29C64/106 , B29C64/124 , B29C64/135 , B29C64/165 , B29C64/255 , B29C67/0088 , B29C2035/0827 , B29C2035/0855 , B29D11/00009 , B29D11/00663 , B29K2075/00 , B29K2075/02 , B29K2105/0002 , B29K2105/0058 , B29K2105/043 , B29K2105/16 , B29K2509/00 , B29L2011/00 , B29L2011/0016 , B29L2011/0075 , B29L2031/001 , B29L2031/10 , B33Y10/00 , B33Y30/00 , B33Y50/02 , B33Y70/00 , B33Y80/00 , C08J5/00 , C08J2375/14 , C08K3/01 , C08K3/013 , C08K5/0008 , C08K5/0041 , C08L75/04 , C08L75/14 , C09D135/02 , C09D175/04 , G03F7/00 , G03F7/0037 , G03F7/027 , G03F7/038 , G03F7/0757 , G03F7/38
Abstract: A polymerizable liquid, or resin, useful for the production by additive manufacturing of a three-dimensional object of polyurethane, polyurea, or a copolymer thereof, is described. The resin includes at least one of (i) a blocked or reactive blocked prepolymer, (ii) a blocked or reactive blocked diisocyanate, or (iii) a blocked or reactive blocked diisocyanate chain extender.
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49.
公开(公告)号:US20180141247A1
公开(公告)日:2018-05-24
申请号:US15794232
申请日:2017-10-26
Applicant: CANON KABUSHIKI KAISHA
Inventor: Noriyasu Nagai , Yukuo Yamaguchi , Toshiaki Hirosawa , Hiromasa Amma , Soji Kondo , Takuya Iwano
CPC classification number: B29C45/006 , B29C65/02 , B29C2045/0063 , B29K2081/04 , B29K2105/0079 , B29K2105/16 , B29L2031/767 , B29L2031/7678 , B41J2/14024 , B41J2/1404 , B41J2/14072 , B41J2/1603 , B41J2/1623 , B41J2/1637 , B41J2/1648 , B41J2002/14467 , B41J2202/12 , B41J2202/19 , B41J2202/20
Abstract: In a molding step, at least a first member, which constitutes a liquid supply unit together with a second member, is injection molded by using an injection mold including first and second molds being made openable and closable. In a mold opening step, the first and second molds are opened while leaving the first member, which is injection molded in the molding step, on the first mold. In a first bonding step, a third member constituting the liquid supply unit is bonded to the first member left on the first mold.
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公开(公告)号:US09978874B2
公开(公告)日:2018-05-22
申请号:US15402504
申请日:2017-01-10
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor: John B. Campi, Jr. , Robert J. Gauthier, Jr. , Rahul Mishra , Souvick Mitra , Mujahid Muhammad
CPC classification number: H01L29/7856 , B29C37/0025 , B29C47/065 , B29C47/56 , B29K2023/12 , B29K2105/16 , B29K2507/04 , B29K2995/0005 , B29K2995/0007 , B29L2009/003 , B29L2009/005 , B29L2031/34 , B32B3/08 , B32B7/02 , B32B27/00 , B32B27/08 , B32B27/28 , B32B27/306 , B32B27/308 , B32B27/32 , B32B27/34 , B32B27/36 , B32B2262/106 , B32B2264/105 , B32B2264/12 , B32B2270/00 , B32B2274/00 , B32B2307/202 , B32B2307/204 , B32B2307/206 , B32B2307/518 , B32B2307/732 , B32B2457/16 , H01G4/005 , H01G4/14 , H01G4/228 , H01G4/30 , H01G4/33 , H01L21/26513 , H01L21/266 , H01L21/823412 , H01L21/823431 , H01L21/823475 , H01L21/823481 , H01L21/823493 , H01L27/0886 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/0696 , H01L29/086 , H01L29/0865 , H01L29/0869 , H01L29/0882 , H01L29/0886 , H01L29/1045 , H01L29/1095 , H01L29/4236 , H01L29/42376 , H01L29/4238 , H01L29/42392 , H01L29/66681 , H01L29/66704 , H01L29/66712 , H01L29/66734 , H01L29/66795 , H01L29/7802 , H01L29/7809 , H01L29/7811 , H01L29/7816 , H01L29/7825 , H01L29/7851 , H01L2029/7858
Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
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