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111 条记录 (耗时 0.028 秒)

    Method of bonding ball grid array package to circuit board without causing package collapse
    61.
    发明授权
    Method of bonding ball grid array package to circuit board without causing package collapse 有权
    将球栅阵列封装焊接到电路板而不会导致封装崩溃的方法

    公开(公告)号：US06350669B1

    公开(公告)日：2002-02-26

    申请号：US09699888

    申请日：2000-10-30

    申请人： Han-Ping Pu ,  Chien-Ping Huang

    发明人： Han-Ping Pu ,  Chien-Ping Huang

    IPC分类号： H01L2144

    CPC分类号： H01L24/11 ,  H01L21/4846 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2224/14505 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/094 ,  H05K2201/10234 ,  H05K2201/10992 ,  H05K2203/041 ,  Y02P70/613 ,  H01L2224/05599

    摘要： A method is proposed for bonding a BGA (Ball Grid Array) package to a circuit board without causing the collapsing of the BGA package against the circuit board. The proposed method is characterized in the use of two groups of solder balls of different reflow collapse degrees, which are arranged in an interspersed manner among each other in the ball grid array. In one embodiment, the first group of solder balls are homogenously made of a solder material of a specific melting point; and the second group of solder balls each include an outer portion and a core portion, with the outer portion having substantially the same melting point as the first group of solder balls, and the core portion being greater in melting point than the outer portion. In another embodiment, the second group of solder balls are greater in melting point than the first group of solder balls. During the solder-reflow process, when the first group of solder balls are entirely melted, the second group of solder balls are only partly melted or entirely unmelted and thus are capable of providing a solid support to the BGA package to prevent the collapsing of BGA package against circuit board.

    摘要翻译： 提出了一种用于将BGA（球栅阵列）封装结合到电路板而不引起BGA封装相对于电路板折叠的方法。 所提出的方法的特征在于使用不同回流塌陷度的两组焊球，其在球栅阵列中以散布的方式相互排列。 在一个实施例中，第一组焊球由具有特定熔点的焊料均质地制成; 并且第二组焊球各自包括外部部分和芯部分，外部部分具有与第一组焊球基本相同的熔点，并且芯部分的熔点大于外部部分。 在另一个实施例中，第二组焊球的熔点高于第一组焊球。 在焊料回流工艺期间，当第一组焊球完全熔化时，第二组焊球仅部分熔化或完全未熔化，因此能够为BGA封装提供固体支撑以防止BGA的塌陷 封装电路板。

    Die carrier for package on package assembly
    65.
    发明授权
    Die carrier for package on package assembly 有权
    封装组件上的封装的载体

    公开(公告)号：US08927333B2

    公开(公告)日：2015-01-06

    申请号：US13302059

    申请日：2011-11-22

    申请人： Tsung-Shu Lin ,  Yu-Ling Tsai ,  Han-Ping Pu

    发明人： Tsung-Shu Lin ,  Yu-Ling Tsai ,  Han-Ping Pu

    IPC分类号： H01L21/00 ,  H01L21/76 ,  H01L23/48 ,  H01L23/552 ,  H01L25/10

    CPC分类号： H01L25/105 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/1017 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00012

    摘要： A package-on-package arrangement for maintaining die alignment during a reflow operation is provided. A first top die has a first arrangement of solder bumps. A bottom package has a first electrical arrangement to electrically connect to the first arrangement of solder bumps. A die carrier has a plurality of mounting regions defined on its bottom surface, wherein the first top die is adhered to the die carrier at a first of the plurality of mounting regions. One of a second top die and a dummy die having a second arrangement of solder bumps is also fixed to the die carrier at a second of the plurality of mounting regions of the die carrier. The first and second arrangements of solder bumps are symmetric to one another, therein balancing a surface tension during a reflow operation, and generally fixing an orientation of the die carrier with respect to the bottom package.

    摘要翻译： 提供了一种用于在回流操作期间维持管芯对准的封装封装布置。 第一顶模具有焊料凸块的第一布置。 底部封装具有电连接到第一焊料凸点布置的第一电气布置。 模具载体具有限定在其底表面上的多个安装区域，其中第一顶模在多个安装区域中的第一个处粘附到模具载体。 具有第二排列焊料凸点的第二顶模和虚模具之一也在模具载体的多个安装区域的第二位置处固定到模具载体。 焊料凸块的第一和第二布置彼此对称，其中在回流操作期间平衡表面张力，并且通常相对于底部封装固定模具载体的取向。

    Wafer level chip scale package with reduced stress on solder balls
    68.
    发明授权
    Wafer level chip scale package with reduced stress on solder balls 有权
    晶圆级芯片级封装，焊球应力减小

    公开(公告)号：US08373282B2

    公开(公告)日：2013-02-12

    申请号：US13162394

    申请日：2011-06-16

    申请人： Yu-Feng Chen ,  Yu-Ling Tsai ,  Han-Ping Pu ,  Hung-Jui Kuo ,  Yu Yi Huang

    发明人： Yu-Feng Chen ,  Yu-Ling Tsai ,  Han-Ping Pu ,  Hung-Jui Kuo ,  Yu Yi Huang

    IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

    CPC分类号： H01L23/562 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/05552

    摘要： A structure includes a metal pad over a semiconductor substrate, a passivation layer having a portion over the metal pad, and a first polyimide layer over the passivation layer, wherein the first polyimide layer has a first thickness and a first Young's modulus. A post-passivation interconnect (PPI) includes a first portion over the first polyimide layer, and a second portion extending into the passivation layer and the first polyimide layer. The PPI is electrically coupled to the metal pad. A second polyimide layer is over the PPI. The second polyimide layer has a second thickness and a second Young's modulus. At least one of a thickness ratio and a Young's modulus ratio is greater than 1.0, wherein the thickness ratio is the ratio of the first thickness to the second thickness, and the Young's modulus ratio is the ratio of the second Young's modulus to the first Young's modulus.

    摘要翻译： 一种结构包括半导体衬底上的金属焊盘，具有金属焊盘上方的一部分的钝化层以及钝化层上的第一聚酰亚胺层，其中第一聚酰亚胺层具有第一厚度和第一杨氏模量。 后钝化互连（PPI）包括在第一聚酰亚胺层之上的第一部分，以及延伸到钝化层和第一聚酰亚胺层中的第二部分。 PPI电耦合到金属垫。 第二个聚酰亚胺层位于PPI之上。 第二聚酰亚胺层具有第二厚度和第二杨氏模量。 厚度比和杨氏模量比中的至少一个大于1.0，其中厚度比是第一厚度与第二厚度的比率，杨氏模量比是第二杨氏模量与第一杨氏模量之比 模数。

    Semiconductor device and fabrication methods thereof
    69.
    发明授权
    Semiconductor device and fabrication methods thereof 有权
    半导体器件及其制造方法

    公开(公告)号：US07888236B2

    公开(公告)日：2011-02-15

    申请号：US11798432

    申请日：2007-05-14

    申请人： Han-Ping Pu ,  Bai-Yao Lou ,  Dean Wang ,  Ching-Wen Hsiao ,  Kai-Ming Ching ,  Chen-Cheng Kuo ,  Wen-Chih Chiou ,  Ding-Chung Lu ,  Shang-Yun Hou

    发明人： Han-Ping Pu ,  Bai-Yao Lou ,  Dean Wang ,  Ching-Wen Hsiao ,  Kai-Ming Ching ,  Chen-Cheng Kuo ,  Wen-Chih Chiou ,  Ding-Chung Lu ,  Shang-Yun Hou

    IPC分类号： H01L21/00

    CPC分类号： H01L21/78 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/051 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/11 ,  H01L2924/00014

    摘要： A method for packaging a semiconductor device disclosed. A substrate comprising a plurality of dies, separated by scribe line areas respectively is provided, wherein at least one layer is overlying the substrate. A portion of the layer within the scribe lines area is removed by photolithography and etching to form openings. The substrate is sawed along the scribe line areas, passing the openings. In alternative embodiment, a first substrate comprising a plurality of first dies separated by first scribe line areas respectively is provided, wherein at least one first structural layer is overlying the first substrate. The first structural layer is patterned to form first openings within the first scribe line areas. A second substrate comprising a plurality of second dies separated by second scribe line areas respectively is provided, wherein at least one second structural layer is overlying the substrate. The second structural layer is patterned to form second openings within the second scribe line areas. The first substrate and the second substrate are bonded to form a stack structure. The stack structure is cut along the first and second scribe line areas, passing the first and second openings.

    摘要翻译： 一种封装半导体器件的方法。 提供了包括分别由划线区域分隔的多个管芯的衬底，其中至少一层覆盖衬底。 通过光刻和蚀刻去除划线部分内的层的一部分以形成开口。 沿着划线区域锯切基板，通过开口。 在替代实施例中，提供了包括分别由第一划线区域分开的多个第一裸片的第一衬底，其中至少一个第一结构层覆盖在第一衬底上。 图案化第一结构层以在第一划线区域内形成第一开口。 提供了包括分别由第二划线区域分开的多个第二裸片的第二衬底，其中至少一个第二结构层覆盖在衬底上。 图案化第二结构层以在第二划线区域内形成第二开口。 第一基板和第二基板被接合以形成堆叠结构。 沿着第一和第二划线区域切割堆叠结构，使第一和第二开口通过。