公开(公告)号：US09524945B2

公开(公告)日：2016-12-20

申请号：US12781987

申请日：2010-05-18

申请人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chung-Shi Liu

IPC分类号： H01L23/488 ,  H01L23/00

CPC分类号： H01L24/13 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05671 ,  H01L2224/10126 ,  H01L2224/10145 ,  H01L2224/11019 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13181 ,  H01L2224/13552 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13575 ,  H01L2224/13686 ,  H01L2224/1369 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0504 ,  H01L2924/07025 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1437 ,  H01L2924/3841 ,  H01L2924/0105 ,  H01L2924/00

摘要： An L-shaped sidewall protection process is used for Cu pillar bump technology. The L-shaped sidewall protection structure is formed of at least one of non-metal material layers, for example a dielectric material layer, a polymer material layer or combinations thereof.

摘要翻译： Cu柱凸块技术采用L形侧壁保护工艺。 L形侧壁保护结构由非金属材料层，例如介电材料层，聚合物材料层或其组合中的至少一种形成。

公开(公告)号：US08841766B2

公开(公告)日：2014-09-23

申请号：US12730411

申请日：2010-03-24

申请人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chun-Chieh Wang ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chun-Chieh Wang ,  Chung-Shi Liu

IPC分类号： H01L23/50 ,  H01L23/00

CPC分类号： H01L21/76885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/023 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03901 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05024 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/0569 ,  H01L2224/10126 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11614 ,  H01L2224/1182 ,  H01L2224/11827 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11912 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/13561 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/13565 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/1369 ,  H01L2224/16238 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/814 ,  H01L2224/81411 ,  H01L2224/81413 ,  H01L2224/81416 ,  H01L2224/81439 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/206 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/01028 ,  H01L2924/01022 ,  H01L2924/01046 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/00

摘要： Sidewall protection processes are provided for Cu pillar bump technology, in which a protection structure on the sidewalls of the Cu pillar bump is formed of at least one of non-metal material layers, for example a dielectric material layer, a polymer material layer, or combinations thereof.

摘要翻译： 提供了用于Cu柱凸点技术的侧壁保护工艺，其中Cu柱凸起的侧壁上的保护结构由非金属材料层，例如电介质材料层，聚合物材料层或聚合物材料层中的至少一个形成 其组合。

公开(公告)号：US08823167B2

公开(公告)日：2014-09-02

申请号：US13551421

申请日：2012-07-17

申请人： Yi-Wen Wu ,  Cheng-Chung Lin ,  Chien Ling Hwang ,  Chung-Shi Liu

发明人： Yi-Wen Wu ,  Cheng-Chung Lin ,  Chien Ling Hwang ,  Chung-Shi Liu

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05687 ,  H01L2224/10145 ,  H01L2224/11002 ,  H01L2224/1112 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13181 ,  H01L2224/13551 ,  H01L2224/13561 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13686 ,  H01L2224/13687 ,  H01L2224/13688 ,  H01L2224/1369 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3841 ,  H01L2924/0105 ,  H01L2224/11 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/00 ,  H01L2224/05552

摘要： This description relates to an integrated circuit device including a conductive pillar formed over a substrate. The conductive pillar has a sidewall surface and a top surface. The integrated circuit device further includes an under-bump-metallurgy (UBM) layer between the substrate and the conductive pillar. The UBM layer has a surface region. The integrated circuit device further includes a protection structure on the sidewall surface of the conductive pillar and the surface region of the UBM layer. The protection structure is formed of a non-metal material.

摘要翻译： 该描述涉及一种集成电路器件，其包括形成在衬底上的导电柱。 导电柱具有侧壁表面和顶表面。 集成电路器件还包括在衬底和导电柱之间的凸起下 - 冶金（UBM）层。 UBM层具有表面区域。 集成电路装置还包括在导电柱的侧壁表面和UBM层的表面区域上的保护结构。 保护结构由非金属材料形成。

公开(公告)号：US08587119B2

公开(公告)日：2013-11-19

申请号：US12761641

申请日：2010-04-16

申请人： Chien-Ling Hwang ,  Yi-Wen Wu ,  Chung-Shi Liu

发明人： Chien-Ling Hwang ,  Yi-Wen Wu ,  Chung-Shi Liu

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03464 ,  H01L2224/03831 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13147 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2224/05552 ,  H01L2924/00

摘要： An embodiment of the disclosure includes a conductive feature on a semiconductor die. A substrate is provided. A bond pad is formed over the substrate. The bond pad has a first width. A polyimide layer is formed over the substrate and the bond pad. The polyimide layer has a first opening over the bond pad with a second width. A silicon-based protection layer overlies the polyimide layer. The silicon-based protection layer has a second opening over the bond pad with a third width. The first opening and the second opening form a combined opening having sidewalls to expose a portion of the bond pad. A UBM layer is formed over the sidewalls of combined opening to contact the exposed portion of the bond pad. A conductive feature overlies the UBM layer.

摘要翻译： 本公开的实施例包括半导体管芯上的导电特征。 提供基板。 在衬底上形成接合焊盘。 接合垫具有第一宽度。 在衬底和接合焊盘上形成聚酰亚胺层。 聚酰亚胺层在接合焊盘上具有第二宽度的第一开口。 硅基保护层覆盖聚酰亚胺层。 硅基保护层在接合焊盘上具有第三宽度的第二开口。 第一开口和第二开口形成具有侧壁以暴露接合垫的一部分的组合开口。 UBM层形成在组合开口的侧壁上，以与接合焊盘的暴露部分接触。 导电特征覆盖在UBM层上。

公开(公告)号：US08569887B2

公开(公告)日：2013-10-29

申请号：US12907249

申请日：2010-10-19

申请人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chung-Shi Liu

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53238 ,  H01L21/76885 ,  H01L23/525 ,  H01L23/53223 ,  H01L23/5329 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/11849 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13562 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13611 ,  H01L2224/16 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01022 ,  H01L2224/05552 ,  H01L2924/00

摘要： A copper interconnect line formed on a passivation layer is protected by a copper-containing material layer including a group III element, a group IV element, a group V element or combinations thereof.

摘要翻译： 形成在钝化层上的铜互连线由包含III族元素，IV族元素，V族元素或其组合的含铜材料层保护。

公开(公告)号：US09018758B2

公开(公告)日：2015-04-28

申请号：US12792002

申请日：2010-06-02

申请人： Chien Ling Hwang ,  Hui-Jung Tsai ,  Yi-Wen Wu ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Hui-Jung Tsai ,  Yi-Wen Wu ,  Chung-Shi Liu

IPC分类号： H01L23/28 ,  H01L23/00 ,  H01L25/065

CPC分类号： H01L21/7688 ,  C23C14/34 ,  C25D5/022 ,  C25D7/00 ,  H01L21/76879 ,  H01L21/76883 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/0361 ,  H01L2224/03826 ,  H01L2224/03831 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/10126 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/13147 ,  H01L2224/1354 ,  H01L2224/13565 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81024 ,  H01L2224/81193 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2224/81911 ,  H01L2225/06513 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05552

摘要： A bump has a non-metal sidewall spacer on a lower sidewall portion of Cu pillar, and a metal top cap on a top surface and an upper sidewall portion of the Cu pillar. The metal top cap is formed by an electroless or immersion plating technique after the non-metal sidewall spacer formation.

摘要翻译： 凸块在Cu柱的下侧壁部分上具有非金属侧壁间隔物，在Cu柱的上表面和上侧壁部分上具有金属顶盖。 在非金属侧壁间隔物形成之后，通过无电镀或浸镀技术形成金属顶盖。

公开(公告)号：US08441124B2

公开(公告)日：2013-05-14

申请号：US12769768

申请日：2010-04-29

申请人： Yi-Wen Wu ,  Cheng-Chung Lin ,  Chien Ling Hwang ,  Chung-Shi Liu

发明人： Yi-Wen Wu ,  Cheng-Chung Lin ,  Chien Ling Hwang ,  Chung-Shi Liu

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05687 ,  H01L2224/10145 ,  H01L2224/11002 ,  H01L2224/1112 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13181 ,  H01L2224/13551 ,  H01L2224/13561 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13686 ,  H01L2224/13687 ,  H01L2224/13688 ,  H01L2224/1369 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3841 ,  H01L2924/0105 ,  H01L2224/11 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/00 ,  H01L2224/05552

摘要： A sidewall protection structure is provided for covering at least a portion of a sidewall surface of a bump structure, in which a protection structure on the sidewalls of a Cu pillar and a surface region of an under-bump-metallurgy (UBM) layer is formed of at least one non-metal material layers, for example a dielectric material layer, a polymer material layer, or combinations thereof.

摘要翻译： 提供了一种侧壁保护结构，用于覆盖凸块结构的侧壁表面的至少一部分，其中形成有Cu柱的侧壁上的保护结构和凸起下 - 冶金（UBM）层的表面区域 至少一个非金属材料层，例如介电材料层，聚合物材料层或其组合。

公开(公告)号：US20110233761A1

公开(公告)日：2011-09-29

申请号：US12730411

申请日：2010-03-24

申请人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chun-Chieh Wang ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chun-Chieh Wang ,  Chung-Shi Liu

IPC分类号： H01L23/50

CPC分类号： H01L21/76885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/023 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03901 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05024 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/0569 ,  H01L2224/10126 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11614 ,  H01L2224/1182 ,  H01L2224/11827 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11912 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/13561 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/13565 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/1369 ,  H01L2224/16238 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/814 ,  H01L2224/81411 ,  H01L2224/81413 ,  H01L2224/81416 ,  H01L2224/81439 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/206 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/01028 ,  H01L2924/01022 ,  H01L2924/01046 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/00

摘要： Sidewall protection processes are provided for Cu pillar bump technology, in which a protection structure on the sidewalls of the Cu pillar bump is formed of at least one of non-metal material layers, for example a dielectric material layer, a polymer material layer, or combinations thereof.

摘要翻译： 提供了用于Cu柱凸点技术的侧壁保护工艺，其中Cu柱凸起的侧壁上的保护结构由非金属材料层，例如电介质材料层，聚合物材料层或聚合物材料层中的至少一个形成 其组合。

公开(公告)号：US09048135B2

公开(公告)日：2015-06-02

申请号：US13028838

申请日：2011-02-16

申请人： Chien Ling Hwang ,  Zheng-Yi Lim ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Zheng-Yi Lim ,  Chung-Shi Liu

IPC分类号： H01L23/488 ,  H01L21/441 ,  H01L23/00

CPC分类号： H01L24/11 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03831 ,  H01L2224/0401 ,  H01L2224/05144 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13657 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/81193 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0539 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/20102 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/00

摘要： An integrated circuit device includes a Cu pillar and a solder layer overlying the Cu pillar. A Co-containing metallization layer is formed to cover the Cu pillar and the solder layer, and then a thermally reflow process is performed to form a solder bump and drive the Co element into the solder bump. Next, an oxidation process is performed to form a cobalt oxide layer on the sidewall surface of the Cu pillar.

摘要翻译： 集成电路器件包括Cu柱和覆盖Cu柱的焊料层。 形成含Co金属化层以覆盖Cu柱和焊料层，然后进行热回流工艺以形成焊料凸块并将Co元件驱动到焊料凸块中。 接下来，进行氧化处理以在Cu柱的侧壁表面上形成氧化钴层。

公开(公告)号：US08679591B2

公开(公告)日：2014-03-25

申请号：US12891487

申请日：2010-09-27

申请人： Chien Ling Hwang ,  Yi-Li Hsiao ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Yi-Li Hsiao ,  Chung-Shi Liu

IPC分类号： B05D1/18

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14

摘要： An embodiment is a method for forming a semiconductor assembly including cleaning a connector including copper formed on a substrate, applying cold tin to the connector, applying hot tin to the connector, and spin rinsing and drying the connector.

摘要翻译： 一个实施例是一种用于形成半导体组件的方法，包括清洁在基板上形成的铜的连接器，向连接器施加冷锡，向连接器施加热锡，并旋转冲洗和干燥连接器。