公开(公告)号：US20110233761A1

公开(公告)日：2011-09-29

申请号：US12730411

申请日：2010-03-24

申请人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chun-Chieh Wang ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chun-Chieh Wang ,  Chung-Shi Liu

IPC分类号： H01L23/50

CPC分类号： H01L21/76885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/023 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03901 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05024 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/0569 ,  H01L2224/10126 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11614 ,  H01L2224/1182 ,  H01L2224/11827 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11912 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/13561 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/13565 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/1369 ,  H01L2224/16238 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/814 ,  H01L2224/81411 ,  H01L2224/81413 ,  H01L2224/81416 ,  H01L2224/81439 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/206 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/01028 ,  H01L2924/01022 ,  H01L2924/01046 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/00

摘要： Sidewall protection processes are provided for Cu pillar bump technology, in which a protection structure on the sidewalls of the Cu pillar bump is formed of at least one of non-metal material layers, for example a dielectric material layer, a polymer material layer, or combinations thereof.

摘要翻译： 提供了用于Cu柱凸点技术的侧壁保护工艺，其中Cu柱凸起的侧壁上的保护结构由非金属材料层，例如电介质材料层，聚合物材料层或聚合物材料层中的至少一个形成 其组合。

公开(公告)号：US08841766B2

公开(公告)日：2014-09-23

申请号：US12730411

申请日：2010-03-24

申请人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chun-Chieh Wang ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chun-Chieh Wang ,  Chung-Shi Liu

IPC分类号： H01L23/50 ,  H01L23/00

CPC分类号： H01L21/76885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/023 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03901 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05024 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/0569 ,  H01L2224/10126 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11614 ,  H01L2224/1182 ,  H01L2224/11827 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11912 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/13561 ,  H01L2224/13562 ,  H01L2224/13564 ,  H01L2224/13565 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/1369 ,  H01L2224/16238 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/814 ,  H01L2224/81411 ,  H01L2224/81413 ,  H01L2224/81416 ,  H01L2224/81439 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/206 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/01028 ,  H01L2924/01022 ,  H01L2924/01046 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2924/00

摘要： Sidewall protection processes are provided for Cu pillar bump technology, in which a protection structure on the sidewalls of the Cu pillar bump is formed of at least one of non-metal material layers, for example a dielectric material layer, a polymer material layer, or combinations thereof.

摘要翻译： 提供了用于Cu柱凸点技术的侧壁保护工艺，其中Cu柱凸起的侧壁上的保护结构由非金属材料层，例如电介质材料层，聚合物材料层或聚合物材料层中的至少一个形成 其组合。

公开(公告)号：US09018758B2

公开(公告)日：2015-04-28

申请号：US12792002

申请日：2010-06-02

申请人： Chien Ling Hwang ,  Hui-Jung Tsai ,  Yi-Wen Wu ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Hui-Jung Tsai ,  Yi-Wen Wu ,  Chung-Shi Liu

IPC分类号： H01L23/28 ,  H01L23/00 ,  H01L25/065

CPC分类号： H01L21/7688 ,  C23C14/34 ,  C25D5/022 ,  C25D7/00 ,  H01L21/76879 ,  H01L21/76883 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/0361 ,  H01L2224/03826 ,  H01L2224/03831 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/10126 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/13147 ,  H01L2224/1354 ,  H01L2224/13565 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81024 ,  H01L2224/81193 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2224/81911 ,  H01L2225/06513 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05552

摘要： A bump has a non-metal sidewall spacer on a lower sidewall portion of Cu pillar, and a metal top cap on a top surface and an upper sidewall portion of the Cu pillar. The metal top cap is formed by an electroless or immersion plating technique after the non-metal sidewall spacer formation.

摘要翻译： 凸块在Cu柱的下侧壁部分上具有非金属侧壁间隔物，在Cu柱的上表面和上侧壁部分上具有金属顶盖。 在非金属侧壁间隔物形成之后，通过无电镀或浸镀技术形成金属顶盖。

公开(公告)号：US08441124B2

公开(公告)日：2013-05-14

申请号：US12769768

申请日：2010-04-29

申请人： Yi-Wen Wu ,  Cheng-Chung Lin ,  Chien Ling Hwang ,  Chung-Shi Liu

发明人： Yi-Wen Wu ,  Cheng-Chung Lin ,  Chien Ling Hwang ,  Chung-Shi Liu

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05687 ,  H01L2224/10145 ,  H01L2224/11002 ,  H01L2224/1112 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13181 ,  H01L2224/13551 ,  H01L2224/13561 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13686 ,  H01L2224/13687 ,  H01L2224/13688 ,  H01L2224/1369 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3841 ,  H01L2924/0105 ,  H01L2224/11 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/00 ,  H01L2224/05552

摘要： A sidewall protection structure is provided for covering at least a portion of a sidewall surface of a bump structure, in which a protection structure on the sidewalls of a Cu pillar and a surface region of an under-bump-metallurgy (UBM) layer is formed of at least one non-metal material layers, for example a dielectric material layer, a polymer material layer, or combinations thereof.

摘要翻译： 提供了一种侧壁保护结构，用于覆盖凸块结构的侧壁表面的至少一部分，其中形成有Cu柱的侧壁上的保护结构和凸起下 - 冶金（UBM）层的表面区域 至少一个非金属材料层，例如介电材料层，聚合物材料层或其组合。

公开(公告)号：US08587119B2

公开(公告)日：2013-11-19

申请号：US12761641

申请日：2010-04-16

申请人： Chien-Ling Hwang ,  Yi-Wen Wu ,  Chung-Shi Liu

发明人： Chien-Ling Hwang ,  Yi-Wen Wu ,  Chung-Shi Liu

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03464 ,  H01L2224/03831 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13147 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2224/05552 ,  H01L2924/00

摘要： An embodiment of the disclosure includes a conductive feature on a semiconductor die. A substrate is provided. A bond pad is formed over the substrate. The bond pad has a first width. A polyimide layer is formed over the substrate and the bond pad. The polyimide layer has a first opening over the bond pad with a second width. A silicon-based protection layer overlies the polyimide layer. The silicon-based protection layer has a second opening over the bond pad with a third width. The first opening and the second opening form a combined opening having sidewalls to expose a portion of the bond pad. A UBM layer is formed over the sidewalls of combined opening to contact the exposed portion of the bond pad. A conductive feature overlies the UBM layer.

摘要翻译： 本公开的实施例包括半导体管芯上的导电特征。 提供基板。 在衬底上形成接合焊盘。 接合垫具有第一宽度。 在衬底和接合焊盘上形成聚酰亚胺层。 聚酰亚胺层在接合焊盘上具有第二宽度的第一开口。 硅基保护层覆盖聚酰亚胺层。 硅基保护层在接合焊盘上具有第三宽度的第二开口。 第一开口和第二开口形成具有侧壁以暴露接合垫的一部分的组合开口。 UBM层形成在组合开口的侧壁上，以与接合焊盘的暴露部分接触。 导电特征覆盖在UBM层上。

公开(公告)号：US08569887B2

公开(公告)日：2013-10-29

申请号：US12907249

申请日：2010-10-19

申请人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chung-Shi Liu

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53238 ,  H01L21/76885 ,  H01L23/525 ,  H01L23/53223 ,  H01L23/5329 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/11849 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13562 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13611 ,  H01L2224/16 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01022 ,  H01L2224/05552 ,  H01L2924/00

摘要： A copper interconnect line formed on a passivation layer is protected by a copper-containing material layer including a group III element, a group IV element, a group V element or combinations thereof.

摘要翻译： 形成在钝化层上的铜互连线由包含III族元素，IV族元素，V族元素或其组合的含铜材料层保护。

公开(公告)号：US09524945B2

公开(公告)日：2016-12-20

申请号：US12781987

申请日：2010-05-18

申请人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chung-Shi Liu

发明人： Chien Ling Hwang ,  Yi-Wen Wu ,  Chung-Shi Liu

IPC分类号： H01L23/488 ,  H01L23/00

CPC分类号： H01L24/13 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05671 ,  H01L2224/10126 ,  H01L2224/10145 ,  H01L2224/11019 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13181 ,  H01L2224/13552 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13575 ,  H01L2224/13686 ,  H01L2224/1369 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0504 ,  H01L2924/07025 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1437 ,  H01L2924/3841 ,  H01L2924/0105 ,  H01L2924/00

摘要： An L-shaped sidewall protection process is used for Cu pillar bump technology. The L-shaped sidewall protection structure is formed of at least one of non-metal material layers, for example a dielectric material layer, a polymer material layer or combinations thereof.

摘要翻译： Cu柱凸块技术采用L形侧壁保护工艺。 L形侧壁保护结构由非金属材料层，例如介电材料层，聚合物材料层或其组合中的至少一种形成。

公开(公告)号：US08823167B2

公开(公告)日：2014-09-02

申请号：US13551421

申请日：2012-07-17

申请人： Yi-Wen Wu ,  Cheng-Chung Lin ,  Chien Ling Hwang ,  Chung-Shi Liu

发明人： Yi-Wen Wu ,  Cheng-Chung Lin ,  Chien Ling Hwang ,  Chung-Shi Liu

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05687 ,  H01L2224/10145 ,  H01L2224/11002 ,  H01L2224/1112 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13181 ,  H01L2224/13551 ,  H01L2224/13561 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13686 ,  H01L2224/13687 ,  H01L2224/13688 ,  H01L2224/1369 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3841 ,  H01L2924/0105 ,  H01L2224/11 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/00 ,  H01L2224/05552

摘要： This description relates to an integrated circuit device including a conductive pillar formed over a substrate. The conductive pillar has a sidewall surface and a top surface. The integrated circuit device further includes an under-bump-metallurgy (UBM) layer between the substrate and the conductive pillar. The UBM layer has a surface region. The integrated circuit device further includes a protection structure on the sidewall surface of the conductive pillar and the surface region of the UBM layer. The protection structure is formed of a non-metal material.

摘要翻译： 该描述涉及一种集成电路器件，其包括形成在衬底上的导电柱。 导电柱具有侧壁表面和顶表面。 集成电路器件还包括在衬底和导电柱之间的凸起下 - 冶金（UBM）层。 UBM层具有表面区域。 集成电路装置还包括在导电柱的侧壁表面和UBM层的表面区域上的保护结构。 保护结构由非金属材料形成。

公开(公告)号：US09082776B2

公开(公告)日：2015-07-14

申请号：US13594544

申请日：2012-08-24

申请人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Yi-Wen Wu ,  Yu-Peng Tsai ,  Chia-Wei Tu ,  Chung-Shi Liu

发明人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Yi-Wen Wu ,  Yu-Peng Tsai ,  Chia-Wei Tu ,  Chung-Shi Liu

IPC分类号： H01L23/52 ,  H01L21/44 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L21/56 ,  H01L21/566 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05541 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/10126 ,  H01L2224/11831 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/206 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor package includes a semiconductor substrate, a contact pad overlying the semiconductor substrate, an interconnect layer overlying the contact pad, a passivation layer formed between the contact pad and the interconnect layer, a bump overlying the interconnect layer, and a protection layer overlying the interconnect layer and the passivation layer and covering a lower portion of the bump. The protection layer includes a curved surface region.

摘要翻译： 半导体封装包括半导体衬底，覆盖半导体衬底的接触焊盘，覆盖接触焊盘的互连层，形成在接触焊盘和互连层之间的钝化层，覆盖在互连层上的凸起以及覆盖在该互连层上的保护层 互连层和钝化层并覆盖凸块的下部。 保护层包括弯曲表面区域。

公开(公告)号：US09117772B2

公开(公告)日：2015-08-25

申请号：US13527422

申请日：2012-06-19

申请人： Zheng-Yi Lim ,  Yi-Wen Wu ,  Tzong-Hann Yang ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Zheng-Yi Lim ,  Yi-Wen Wu ,  Tzong-Hann Yang ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L21/44 ,  H01L23/31 ,  H01L25/10 ,  H01L25/00 ,  H01L25/065 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L24/81 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49833 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13023 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/16501 ,  H01L2224/16505 ,  H01L2224/32135 ,  H01L2224/32141 ,  H01L2224/32145 ,  H01L2224/81085 ,  H01L2224/811 ,  H01L2224/8112 ,  H01L2224/81121 ,  H01L2224/81193 ,  H01L2224/81232 ,  H01L2224/81355 ,  H01L2224/81359 ,  H01L2224/81801 ,  H01L2224/8192 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/1533 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01005 ,  H01L2924/01074 ,  H01L2924/01015 ,  H01L2924/06 ,  H01L2924/00

摘要： A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.

摘要翻译： 一种方法包括将第一包装部件的第一电连接器与第二包装部件的第二电连接器对准。 利用第一电​​连接器与第二电连接器对准，金属层被电镀在第一和第二电连接器上。 金属层将第一电连接器连接到第二电连接器。