公开(公告)号：US20130309621A1

公开(公告)日：2013-11-21

申请号：US13475790

申请日：2012-05-18

申请人： Hui-Min HUANG ,  Chih-Wei LIN ,  Wen-Hsiung LU ,  Ming-Da CHENG ,  Chung-Shi LIU

发明人： Hui-Min HUANG ,  Chih-Wei LIN ,  Wen-Hsiung LU ,  Ming-Da CHENG ,  Chung-Shi LIU

IPC分类号： H01L21/687 ,  F27D19/00 ,  F27D5/00

CPC分类号： H01L21/67288 ,  H01L21/6838

摘要： A method for adjusting the warpage of a wafer, includes providing a wafer having a center portion and edge portions and providing a holding table having a holding area thereon for holding the wafer. The wafer is placed onto the holding table with the center portion higher than the edge portions and thereafter pressed onto the holding area such that the wafer is attracted to and held onto the holding table by self-suction force. The wafer is heated at a predetermined temperature and for a predetermined time in accordance with an amount of warpage of the wafer in order to achieve a substantially flat wafer or a predetermined wafer level.

摘要翻译： 一种用于调整晶片翘曲的方法，包括提供具有中心部分和边缘部分的晶片，并提供其上具有用于保持晶片的保持区域的保持台。 将晶片放置在保持台上，其中心部分高​​于边缘部分，然后按压到保持区域上，使得晶片通过自吸力被吸引并保持在保持台上。 根据晶片的翘曲量将晶片在预定温度下加热预定时间，以便实现基本上平坦的晶片或预定的晶片级。

公开(公告)号：US20120178251A1

公开(公告)日：2012-07-12

申请号：US13004376

申请日：2011-01-11

申请人： Zheng-Yi LIM ,  Yi-Wen WU ,  Wen-Hsiung LU ,  Chih-Wei LIN ,  Tzong-Huann YANG ,  Hsiu-Jen LIN ,  Ming-Da CHENG ,  Chung-Shi LIU

发明人： Zheng-Yi LIM ,  Yi-Wen WU ,  Wen-Hsiung LU ,  Chih-Wei LIN ,  Tzong-Huann YANG ,  Hsiu-Jen LIN ,  Ming-Da CHENG ,  Chung-Shi LIU

IPC分类号： H01L21/768

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11824 ,  H01L2224/11827 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13583 ,  H01L2224/13693 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/01047 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01073 ,  H01L2924/01049 ,  H01L2924/0103 ,  H01L2924/01025 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01078 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01082 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： The disclosure relates to fabrication of to a metal pillar. An exemplary method of fabricating a semiconductor device comprises the steps of providing a substrate having a contact pad; forming a passivation layer extending over the substrate having an opening over the contact pad; forming a metal pillar over the contact pad and a portion of the passivation layer; forming a solder layer over the metal pillar; and causing sidewalls of the metal pillar to react with an organic compound to form a self-assembled monolayer or self-assembled multi-layers of the organic compound on the sidewalls of the metal pillar.

摘要翻译： 本公开涉及制造金属柱。 制造半导体器件的示例性方法包括以下步骤：提供具有接触焊盘的衬底; 形成在衬底上延伸的钝化层，该钝化层在接触焊盘上具有开口; 在所述接触焊盘和所述钝化层的一部分上形成金属柱; 在金属柱上形成焊料层; 并且使金属柱的侧壁与有机化合物反应，以在金属柱的侧壁上形成自组装单层或有机化合物的自组装多层。

公开(公告)号：US20120267781A1

公开(公告)日：2012-10-25

申请号：US13543438

申请日：2012-07-06

申请人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Chung-Shi LIU

发明人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Chung-Shi LIU

IPC分类号： H01L23/488

CPC分类号： H01L21/2885 ,  C25D5/022 ,  C25D5/10 ,  C25D17/12 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/06102 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/742 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/01046 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/00 ,  H01L2224/05552

摘要： This disclosure relates to a bump structure on a substrate including a copper layer, wherein the copper layer fills an opening created in a dielectric layer and a polymer layer. The bump structure further includes an under-bump-metallurgy (UBM) layer lines the opening and the copper layer is deposited over the UBM layer. The bump structure further includes a surface of the copper layer facing away from the substrate is curved. This disclosure also relates to two bump structures with different heights on a substrate where a thickness of the first bump structure is different than a thickness of the second bump structure. This disclosure also relates to a semiconductor device including a bump structure.

摘要翻译： 本公开涉及包括铜层的基板上的凸块结构，其中铜层填充在电介质层和聚合物层中形成的开口。 凸块结构还包括凸起下冶金（UBM）层，该开口划线并且铜层沉积在UBM层上。 凸起结构还包括铜层背离衬底的表面是弯曲的。 本公开还涉及在基板上具有不同高度的两个凸块结构，其中第一凸块结构的厚度不同于第二凸块结构的厚度。 本公开还涉及包括凸块结构的半导体器件。

公开(公告)号：US20120091574A1

公开(公告)日：2012-04-19

申请号：US12904506

申请日：2010-10-14

申请人： Chih-Wei LIN ,  Ming-Da CHENG ,  Wen-Hsiung LU ,  Meng-Wei CHOU ,  Hung-Jui KUO ,  Chung-Shi LIU

发明人： Chih-Wei LIN ,  Ming-Da CHENG ,  Wen-Hsiung LU ,  Meng-Wei CHOU ,  Hung-Jui KUO ,  Chung-Shi LIU

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0341 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05559 ,  H01L2224/05564 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11472 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/48 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01028 ,  H01L2924/01044 ,  H01L2924/01025 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/00 ,  H01L2224/05552

摘要： The invention relates to a bump structure of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate; a contact pad over the substrate; a passivation layer extending over the substrate having an opening over the contact pad; and a conductive pillar over the opening of the passivation layer, wherein the conductive pillar comprises an upper portion substantially perpendicular to a surface of the substrate and a lower portion having tapered sidewalls.

摘要翻译： 本发明涉及半导体器件的凸块结构。 半导体器件的示例性结构包括衬底; 衬底上的接触垫; 钝化层，其在所述衬底上延伸，在所述接触焊盘上具有开口; 以及在所述钝化层的开口上的导电柱，其中所述导电柱包括基本上垂直于所述衬底的表面的上部和具有锥形侧壁的下部。

公开(公告)号：US20120043654A1

公开(公告)日：2012-02-23

申请号：US12859379

申请日：2010-08-19

申请人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Chung-Shi LIU

发明人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Chung-Shi LIU

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L21/2885 ,  C25D5/022 ,  C25D5/10 ,  C25D17/12 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/06102 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/742 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/01046 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/00 ,  H01L2224/05552

摘要： The mechanisms of preparing bump structures described by using patterned anodes may simplify bump-making process, reduce manufacturing cost, and improve thickness uniformity within die and across the wafer. In addition, the mechanisms described above allow forming bumps with different heights to allow bumps to be integrated with elements on a substrate with different heights. Bumps with different heights expand the application of copper post bumps to enable further chip integration.

摘要翻译： 通过使用图案化阳极描述的制备凸块结构的机理可以简化凸块制造工艺，降低制造成本，并且改善晶片内和晶片之间的厚度均匀性。 此外，上述机构允许形成具有不同高度的凸块，以允许凸块与不同高度的基板上的元件一体化。 具有不同高度的冲击扩大了铜柱凸起的应用，以实现进一步的芯片集成。

公开(公告)号：US20110254151A1

公开(公告)日：2011-10-20

申请号：US12761863

申请日：2010-04-16

申请人： Chih-Wei LIN ,  Ming-Da CHENG ,  Wen-Hsiung LU ,  Chung-Shi LIU

发明人： Chih-Wei LIN ,  Ming-Da CHENG ,  Wen-Hsiung LU ,  Chung-Shi LIU

IPC分类号： H01L23/498 ,  H01L21/3205

CPC分类号： C23C18/1605 ,  C23C18/165 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81193 ,  H01L2224/81447 ,  H01L2924/0002 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/01046 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method for fabricating bump structure without UBM undercut uses an electroless Cu plating process to selectively form a Cu UBM layer on a Ti UBM layer within an opening of a photoresist layer. After stripping the photoresist layer, there is no need to perform a wet etching process on the Cu UBM layer, and thereby the UBM structure has a non-undercut profile.

摘要翻译： 用于制造没有UBM底切的凸块结构的方法使用无电镀铜工艺在光致抗蚀剂层的开口内的Ti UBM层上选择性地形成Cu UBM层。 在剥离光致抗蚀剂层之后，不需要对Cu UBM层进行湿蚀刻处理，从而UBM结构具有非底切轮廓。

公开(公告)号：US20110260317A1

公开(公告)日：2011-10-27

申请号：US12765250

申请日：2010-04-22

申请人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Jacky CHANG ,  Chung-Shi LIU ,  Chen-Hua YU

发明人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Jacky CHANG ,  Chung-Shi LIU ,  Chen-Hua YU

IPC分类号： H01L23/50 ,  H01L21/768

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0346 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11906 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/13455 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A copper pillar bump has a sidewall protection layer formed of an electrolytic metal layer. The electrolytic metal layer is an electrolytic nickel layer, an electrolytic gold layer, and electrolytic copper layer, or an electrolytic silver layer.

摘要翻译： 铜柱凸起具有由电解金属层形成的侧壁保护层。 电解金属层是电解镍层，电解金层，电解铜层或电解银层。

公开(公告)号：US20120007228A1

公开(公告)日：2012-01-12

申请号：US12832231

申请日：2010-07-08

申请人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Ming-Che HO ,  Chung-Shi LIU

发明人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Ming-Che HO ,  Chung-Shi LIU

IPC分类号： H01L23/498 ,  H01L21/768 ,  H01L23/00

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/11424 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13076 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13647 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/10335 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2224/13655 ,  H01L2224/81 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05552

摘要： An embodiment of the disclosure includes a conductive pillar on a semiconductor die. A substrate is provided. A bond pad is over the substrate. A conductive pillar is over the bond pad. The conductive pillar has a top surface, edge sidewalls and a height. A cap layer is over the top surface of the conductive pillar. The cap layer extends along the edge sidewalls of the conductive pillar for a length. A solder material is over a top surface of the cap layer.

摘要翻译： 本公开的实施例包括半导体管芯上的导电柱。 提供基板。 焊盘在衬底上。 导电支柱位于接合垫上方。 导电柱具有顶表面，边缘侧壁和高度。 覆盖层在导电柱的顶表面之上。 盖层沿着导电柱的边缘侧壁延伸一段长度。 焊料材料在覆盖层的顶表面之上。

公开(公告)号：US20110101527A1

公开(公告)日：2011-05-05

申请号：US12846353

申请日：2010-07-29

申请人： Ming-Da CHENG ,  Wen-Hsiung LU ,  Chih-Wei LIN ,  Ching-Wen CHEN ,  Yi-Wen WU ,  Chia-Tung CHANG ,  Ming-Che HO ,  Chung-Shi LIU

发明人： Ming-Da CHENG ,  Wen-Hsiung LU ,  Chih-Wei LIN ,  Ching-Wen CHEN ,  Yi-Wen WU ,  Chia-Tung CHANG ,  Ming-Che HO ,  Chung-Shi LIU

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/10145 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11827 ,  H01L2224/13006 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13647 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16507 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3651 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/05 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2224/05552

摘要： The mechanism of forming a metal bump structure described above resolves the delamination issues between a conductive layer on a substrate and a metal bump connected to the conductive layer. The conductive layer can be a metal pad, a post passivation interconnect (PPI) layer, or a top metal layer. By performing an in-situ deposition of a protective conductive layer over the conductive layer (or base conductive layer), the under bump metallurgy (UBM) layer of the metal bump adheres better to the conductive layer and reduces the occurrence of interfacial delamination. In some embodiments, a copper diffusion barrier sub-layer in the UBM layer can be removed. In some other embodiments, the UBM layer is not needed if the metal bump is deposited by a non-plating process and the metal bump is not made of copper.

摘要翻译： 上述形成金属凸块结构的机构解决了基板上的导电层与连接到导电层的金属凸块之间的分层问题。 导电层可以是金属焊盘，后钝化互连（PPI）层或顶层金属层。 通过在导电层（或基底导电层）上进行保护性导电层的原位沉积，金属凸块的凸块下金属（UBM）层更好地粘附到导电层并减少界面分层的发生。 在一些实施例中，可以去除UBM层中的铜扩散阻挡子层。 在一些其它实施例中，如果通过非电镀工艺沉积金属凸块并且金属凸块不是由铜制成的，则不需要UBM层。

公开(公告)号：US20130307140A1

公开(公告)日：2013-11-21

申请号：US13475674

申请日：2012-05-18

申请人： Hui-Min HUANG ,  Yen-Chang HU ,  Chih-Wei LIN ,  Ming-Da CHENG ,  Chung-Shi LIU ,  Chen-Shien CHEN

发明人： Hui-Min HUANG ,  Yen-Chang HU ,  Chih-Wei LIN ,  Ming-Da CHENG ,  Chung-Shi LIU ,  Chen-Shien CHEN

IPC分类号： H01L23/498 ,  H01L21/56 ,  H01L23/48

CPC分类号： H01L23/495 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49827 ,  H01L24/19 ,  H01L25/105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The mechanisms of using an interposer frame to package a semiconductor die enables fan-out structures and reduces form factor for the packaged semiconductor die. The mechanisms involve using a molding compound to attach the semiconductor die to the interposer frame and forming a redistribution layer on one or both sides of the semiconductor die. The redistribution layer(s) in the package enables fan-out connections and formation of external connection structures. Conductive columns in the interposer frame assist in thermal management.

摘要翻译： 使用插入器框架来封装半导体管芯的机构能够实现扇出结构并减小封装半导体管芯的外形尺寸。 这些机构涉及使用模制化合物将半导体管芯附接到插入器框架并在半导体管芯的一侧或两侧上形成再分布层。 封装中的再分配层可以进行扇出连接并形成外部连接结构。 插入式框架中的导电柱有助于热管理。