Abstract:
An assembly with modules (110, 1310) containing integrated circuits and attached to a wiring substrate (120) is reinforced by one or more reinforcement frames (410) attached to the wiring substrate. The modules are located in openings (e.g. cavities and/or through-holes 414) in the reinforcement frame. Other features are also provided.
Abstract:
A device and method for localizing underfill includes a substrate, a plurality of dies, and underfill material. The substrate includes a plurality of contacts and a plurality of cavities separated by a plurality of mesas. The plurality of dies is mounted to the substrate using the plurality of contacts. The underfill material is located between the substrate and the dies. The underfill material is localized into a plurality of regions using the mesas. Each of the contacts is located in a respective one of the cavities. In some embodiments, the substrate further includes a plurality of channels interconnecting the cavities. In some embodiments, the substrate further includes a plurality of intra-cavity mesas for further localizing the underfill material. In some embodiments, outer edges of a first one of the dies rest on first mesas located on edges of a first one of the cavities.
Abstract:
Die (110) and/or undiced wafers and/or multichip modules (MCMs) are attached on top of an interposer (120) or some other structure (e.g. another integrated circuit) and are covered by an encapsulant (160). Then the interposer is thinned from below. Before encapsulation, a layer (410) more rigid than the encapsulant is formed on the interposer around the die to reduce or eliminate interposer dishing between the die when the interposer is thinned by a mechanical process (e.g. CMP). Other features are also provided.
Abstract:
In one embodiment, a method for making a 3D Metal-Insulator-Metal (MIM) capacitor includes providing a substrate having a surface, forming an array of upstanding rods or ridges on the surface, depositing a first layer of an electroconductor on the surface and the array of rods or ridges, coating the first electroconductive layer with a layer of a dielectric, and depositing a second layer of an electroconductor on the dielectric layer. In some embodiments, the array of rods or ridges can be made of a photoresist material, and in others, can comprise bonded wires.
Abstract:
An assembly with modules (110, 1310) containing integrated circuits and attached to a wiring substrate (120) is reinforced by one or more reinforcement frames (410) attached to the wiring substrate. The modules are located in openings (e.g. cavities and/or through-holes 414) in the reinforcement frame. Other features are also provided.
Abstract:
An apparatus relates generally to a microelectronic package. In such an apparatus, a microelectronic die has a first surface, a second surface opposite the first surface, and a sidewall surface between the first and second surfaces. A plurality of wire bond wires with proximal ends thereof are coupled to either the first surface or the second surface of the microelectronic die with distal ends of the plurality of wire bond wires extending away from either the first surface or the second surface, respectively, of the microelectronic die. A portion of the plurality of wire bond wires extends outside a perimeter of the microelectronic die into a fan-out (“FO”) region. A molding material covers the first surface, the sidewall surface, and portions of the plurality of the wire bond wires from the first surface of the microelectronic die to an outer surface of the molding material.
Abstract:
A microelectronic component (110, 120) has a contact pad (110C, 120C, 920C) recessed in a cavity (410) and covered by underfill tape (130). The cavity has a void (410V) below the underfill tape. A protruding contact pad of another microelectronic component ruptures the underfill tape to enter the cavity and bond to the recessed contact pad. The void helps in rupturing the underfill tape, thus reducing the amount of underfill residue between the two contact pads and improving the contact resistance. Also provided is a microelectronic component having a substrate with a cavity and having a through-substrate via extending into the cavity. Other features are also provided.
Abstract:
In a multi-chip module (MCM), a “super” chip (110N) is attached to multiple “plain” chips (110F′ “super” and “plain” chips can be any chips). The super chip is positioned above the wiring board (WB) but below at least some of plain chips (110F). The plain chips overlap the super chip. Further, the plain chips' low speed IOs can be connected to the WB by long direct connections such as bond wires (e.g. BVAs) or solder stacks; such connections can be placed side by side with the super chip. Such connections can be long, so the super chip is not required to be thin. Also, if through-substrate vias (TSVs) are omitted, the manufacturing yield is high and the manufacturing cost is low. Other structures are provided that combine the short and long direct connections to obtain desired physical and electrical properties.
Abstract:
A contact pad includes a solder-wettable porous network (310) which wicks the molten solder (130) and thus restricts the lateral spread of the solder, thus preventing solder bridging between adjacent contact pads.
Abstract:
In a microelectronic device, a substrate has first upper and lower surfaces. An integrated circuit die has second upper and lower surfaces. Interconnects couple the first upper surface of the substrate to the second lower surface of the integrated circuit die for electrical communication therebetween. A via array has proximal ends of wires thereof coupled to the second upper surface for conduction of heat away from the integrated circuit die. A molding material is disposed in the via array with distal ends of the wires of the via array extending at least to a superior surface of the molding material.