公开(公告)号：US20090008801A1

公开(公告)日：2009-01-08

申请号：US12217365

申请日：2008-07-02

申请人： Jeng-Yuan Lai ,  Chien-Ping Huang ,  Chun-Chi Ke ,  Yu-Po Wang ,  Chiao-Hung Yen

发明人： Jeng-Yuan Lai ,  Chien-Ping Huang ,  Chun-Chi Ke ,  Yu-Po Wang ,  Chiao-Hung Yen

IPC分类号： H01L23/52 ,  H01L21/00

CPC分类号： H05K1/0206 ,  H01L21/50 ,  H01L21/563 ,  H01L23/3677 ,  H01L23/3735 ,  H01L23/4985 ,  H01L24/17 ,  H01L24/32 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/16225 ,  H01L2224/27013 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/83051 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H05K1/0209 ,  H05K1/189 ,  H05K2201/09781 ,  H05K2201/10674 ,  H01L2924/00 ,  H01L2924/00014

摘要： This invention discloses a semiconductor device and a method for fabricating the same. The method includes providing a flexible carrier board having a first surface and a second surface opposite thereto; forming a metal lead layer and a first heat dissipating metal layer on the first surface of the flexible carrier board, and forming a second heat dissipating metal layer on the second surface of the flexible carrier board; providing a chip having an active surface and an opposed non-active surface, wherein a plurality of solder pads are formed on the active surface of the chip, each of the solder pads has a metal bump formed thereon and corresponding in position to the metal lead layer, and heat dissipating bumps are formed between the metal bumps corresponding in position to the first heat dissipating metal layer.

摘要翻译： 本发明公开了一种半导体器件及其制造方法。 该方法包括提供具有第一表面和与其相对的第二表面的柔性载体板; 在柔性载体板的第一表面上形成金属引线层和第一散热金属层，并在柔性载体板的第二表面上形成第二散热金属层; 提供具有活性表面和相对的非活性表面的芯片，其中在芯片的有源表面上形成多个焊盘，每个焊盘在其上形成金属凸块，并且在金属引线的对应位置 在与第一散热金属层的位置对应的金属凸块之间形成有散热凸块。

公开(公告)号：US08564115B2

公开(公告)日：2013-10-22

申请号：US13492220

申请日：2012-06-08

申请人： Chang-Yueh Chan ,  Chien-Ping Huang ,  Chun-Chi Ke ,  Chun-An Huang ,  Chih-Ming Huang

发明人： Chang-Yueh Chan ,  Chien-Ping Huang ,  Chun-Chi Ke ,  Chun-An Huang ,  Chih-Ming Huang

IPC分类号： H01L23/04

CPC分类号： H01L21/02 ,  B81B7/007 ,  B81B2207/07 ,  H01L23/52 ,  H01L29/84 ,  H01L2224/02166 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

摘要： Proposed is a package structure having a micro-electromechanical (MEMS) element, including a chip having a plurality of electrical connecting pads and a MEMS element formed thereon; a lid disposed on the chip for covering the MEMS element; a stud bump disposed on each of the electrical connecting pads; an encapsulant formed on the chip with part of the stud bumps being exposed from the encapsulant; and a metal conductive layer formed on the encapsulant and connected to the stud bumps. The invention is characterized by completing the packaging process on the wafer directly to enable thinner and cheaper package structures to be fabricated within less time. This invention further provides a method for fabricating the package structure as described above.

摘要翻译： 提出具有微机电（MEMS）元件的封装结构，其包括具有多个电连接焊盘和形成在其上的MEMS元件的芯片; 设置在所述芯片上用于覆盖所述MEMS元件的盖; 设置在每个电连接焊盘上的螺柱凸块; 形成在芯片上的密封剂，其中一部分柱状凸块从密封剂暴露出来; 以及金属导电层，形成在密封剂上并连接到凸块上。 本发明的特征在于直接完成晶片上的封装工艺，以便在更短的时间内制造更薄和更便宜的封装结构。 本发明还提供如上所述的用于制造封装结构的方法。

公开(公告)号：US20110298126A1

公开(公告)日：2011-12-08

申请号：US12970126

申请日：2010-12-16

申请人： Yueh-Ying Tsai ,  Fu-Di Tang ,  Chien-Ping Huang ,  Chun-Chi Ke

发明人： Yueh-Ying Tsai ,  Fu-Di Tang ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC分类号： H01L23/492 ,  H01L23/488 ,  H01L21/50

CPC分类号： H01L23/49582 ,  H01L21/4832 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49548 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L2221/68345 ,  H01L2221/68377 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method for fabricating a carrier-free semiconductor package includes: half-etching a metal carrier to form a plurality of recess grooves and a plurality of metal studs each serving in position as a solder pad or a die pad; filing each of the recess grooves with a first encapsulant; forming on the metal studs an antioxidant layer such as a silver plating layer or an organic solderable protection layer; and performing die-bonding, wire-bonding and molding processes respectively to form a second encapsulant encapsulating the chip. The recess grooves are filled with the first encapsulant to enhance the adhesion between the first encapsulant and the metal carrier, thereby solving the conventional problem of having a weak and pliable copper plate and avoiding transportation difficulty. The invention eliminates the use of costly metals as an etching resist layer to reduce fabrication cost, and further allows conductive traces to be flexibly disposed on the metal carrier to enhance electrical connection quality.

摘要翻译： 制造无载体半导体封装的方法包括：半蚀刻金属载体以形成多个凹槽和多个金属柱，每个金属柱用作焊盘或管芯焊盘的位置; 用第一密封剂填充每个凹槽; 在金属柱上形成诸如镀银层或有机可焊保护层的抗氧化层; 并分别进行芯片接合，引线接合和模制工艺以形成封装芯片的第二密封剂。 凹槽被第一密封剂填充以增强第一密封剂和金属载体之间的粘合性，从而解决了具有弱和柔韧的铜板的传统问题，并避免了运输困难。 本发明消除了使用昂贵的金属作为抗蚀剂层以降低制造成本，并且还允许导电迹线被柔性地布置在金属载体上以增强电连接质量。

公开(公告)号：US20110159643A1

公开(公告)日：2011-06-30

申请号：US12770059

申请日：2010-04-29

申请人： Pang-Chun Lin ,  Chun-Yuan Li ,  Chien-Ping Huang ,  Chun-Chi Ke

发明人： Pang-Chun Lin ,  Chun-Yuan Li ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC分类号： H01L21/60 ,  H01L21/56

CPC分类号： H01L23/495 ,  H01L21/4832 ,  H01L23/3107 ,  H01L23/4951 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/181 ,  Y10T29/49117 ,  Y10T29/49171 ,  Y10T29/49172 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A fabrication method of a semiconductor package structure includes: patterning a metal plate having first and second surfaces; forming a dielectric layer on the metal plate; forming a metal layer on the first surface and the dielectric layer; forming metal pads on the second surface, the metal layer having a die pad and traces each having a bond pad; mounting a semiconductor chip on the die pad, followed by connecting electrically the semiconductor chip to the bond pads through bonding wires; forming an encapsulant to cover the semiconductor chip and the metal layer; removing portions of the metal plate not covered by the metal pads so as to form metal pillars; and performing a singulation process. The fabrication method is characterized by disposing traces with bond pads close to the die pad to shorten the bonding wires and forming metal pillars protruding from the dielectric layer to avoid solder bridging.

摘要翻译： 半导体封装结构的制造方法包括：图案化具有第一表面和第二表面的金属板; 在所述金属板上形成电介质层; 在所述第一表面和所述电介质层上形成金属层; 在所述第二表面上形成金属焊盘，所述金属层具有管芯焊盘并且各自具有接合焊盘; 将半导体芯片安装在芯片焊盘上，然后通过接合线将半导体芯片电连接到焊盘; 形成密封剂以覆盖半导体芯片和金属层; 去除未被金属垫覆盖的金属板的部分，以形成金属柱; 并执行单独处理。 该制造方法的特征在于，将具有接合焊盘的迹线设置在芯片焊盘附近以缩短接合线并形成从电介质层突出的金属柱，以避免焊料桥接。

公开(公告)号：US20110157851A1

公开(公告)日：2011-06-30

申请号：US12759117

申请日：2010-04-13

申请人： Pang-Chun Lin ,  Hsiao-Jen Hung ,  Chun-Yuan Li ,  Chien-Ping Huang ,  Chun-Chi Ke

发明人： Pang-Chun Lin ,  Hsiao-Jen Hung ,  Chun-Yuan Li ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC分类号： H05K7/02

CPC分类号： H01L25/105 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49861 ,  H01L24/16 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10T29/4913 ,  Y10T29/49131 ,  Y10T29/49144 ,  Y10T29/49146 ,  Y10T29/49165 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A package structure includes a base body having a first encapsulant and a wiring layer embedded in and exposed from the first encapsulant. The wiring layer has a plurality of conductive traces and a plurality of first electrical contact pads. The first encapsulant has openings for exposing the first electrical contact pads, a chip electrically connected to the wiring layer, and a second encapsulant formed on the base body for covering the chip and the wiring layer, thereby providing an even surface for preventing the encapsulant from cracking when the chip is mounted.

摘要翻译： 封装结构包括具有第一密封剂和嵌入第一密封剂并暴露于第一密封剂的布线层的基体。 布线层具有多个导电迹线和多个第一电接触焊盘。 第一密封剂具有用于暴露第一电接触焊盘的开口，与布线层电连接的芯片，以及形成在基体上的用于覆盖芯片和布线层的第二密封剂，从而提供均匀的表面，以防止密封剂 芯片安装时开裂。

公开(公告)号：US20110156252A1

公开(公告)日：2011-06-30

申请号：US12859635

申请日：2010-08-19

申请人： Pang-Chun Lin ,  Chun-Yuan Li ,  Fu-Di Tang ,  Chien-Ping Huang ,  Chun-Chi Ke

发明人： Pang-Chun Lin ,  Chun-Yuan Li ,  Fu-Di Tang ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC分类号： H01L23/49 ,  H01L21/00

CPC分类号： H01L21/568 ,  H01L21/78 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/85001 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor package having electrical connecting structures includes: a conductive layer having a die pad and traces surrounding the die pad; a chip; bonding wires; an encapsulant with a plurality of cavities having a depth greater than the thickness of the die pad and traces for embedding the die pad and the traces therein, and the cavities exposing the die pad and the traces; a solder mask layer formed in the cavities and having a plurality of openings for exposing the trace ends and a portion of the die pad; and solder balls formed in the openings and electrically connected to the trace ends. Engaging the solder mask layer with the encapsulant enhances adhesion strength of the solder mask layer so as to prolong the moisture permeation path and enhance package reliability.

摘要翻译： 具有电连接结构的半导体封装包括：具有管芯焊盘和围绕管芯焊盘的迹线的导电层; 一个芯片 接合线; 具有多个空腔的密封剂，其深度大于管芯焊盘的厚度，以及用于将管芯焊盘和其中的迹线嵌入其中的迹线，以及暴露管芯焊盘和迹线的空腔; 形成在所述空腔中的焊料掩模层，并且具有用于暴露所述迹线端部和所述管芯焊盘的一部分的多个开口; 以及形成在开口中并电连接到迹线端的焊球。 将焊料掩模层与密封剂接合，增强了焊料掩模层的粘合强度，从而延长了水分渗透路径并提高了封装的可靠性。

公开(公告)号：US20110070728A1

公开(公告)日：2011-03-24

申请号：US12956393

申请日：2010-11-30

申请人： Chun-Chi Ke ,  Chien-Ping Huang

发明人： Chun-Chi Ke ,  Chien-Ping Huang

IPC分类号： H01L21/768

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/013

摘要： A semiconductor device having conductive bumps and a fabrication method thereof is proposed. The fabrication method includes the steps of forming a first metallic layer on a substrate having solder pads and a passivation layer formed thereon, and electrically connecting it to the solder pads; applying a second covering layer over exposed parts of the first metallic layer; subsequently, forming a second metallic layer on the second covering layer, and electrically connecting it to the exposed parts of the first metallic layer; applying a third covering layer, and forming openings for exposing parts of the second metallic layer to form thereon a conductive bump having a metallic standoff and a solder material. The covering layers and the metallic layers can provide a buffering effect for effectively absorbing the thermal stress imposed on the conductive bumps to prevent delamination caused by the UBM layers.

摘要翻译： 提出了具有导电凸块的半导体器件及其制造方法。 该制造方法包括以下步骤：在具有焊盘和形成在其上的钝化层的基板上形成第一金属层，并将其电连接到焊盘; 在第一金属层的暴露部分上施加第二覆盖层; 随后在第二覆盖层上形成第二金属层，并将其电连接到第一金属层的暴露部分; 施加第三覆盖层，以及形成用于暴露第二金属层的部分的开口以在其上形成具有金属支座和焊料材料的导电凸块。 覆盖层和金属层可以提供缓冲效果，用于有效地吸收施加在导电凸块上的热应力，以防止由UBM层引起的分层。

公开(公告)号：US20090261476A1

公开(公告)日：2009-10-22

申请号：US12148319

申请日：2008-04-18

申请人： Chien-Ping Huang ,  Chin-Huang Chang ,  Chih-Ming Huang ,  Cheng-Hsu Hsiao ,  Chun-Chi Ke

发明人： Chien-Ping Huang ,  Chin-Huang Chang ,  Chih-Ming Huang ,  Cheng-Hsu Hsiao ,  Chun-Chi Ke

IPC分类号： H01L23/482 ,  H01L21/60

CPC分类号： H01L24/19 ,  H01L21/6835 ,  H01L23/3114 ,  H01L24/24 ,  H01L24/82 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/24226 ,  H01L2224/82001 ,  H01L2225/1035 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311

摘要： A semiconductor device and a manufacturing method thereof are disclosed. The method includes the steps of providing a carrier board having conductive circuits disposed thereon and a plurality of chips with active surfaces having solder pads disposed thereon, wherein conductive bumps are disposed on the solder pads; mounting chips on the carrier board; filling the spacing between the chips with a dielectric layer and forming openings in the dielectric layer at periphery of each chip to expose the conductive circuits; forming a metal layer in the openings of the dielectric layer and at periphery of the active surface of the chips for electrically connecting the conductive bumps and the conductive circuits; and cutting along the dielectric layer between the chips and removing the carrier board to separate each chip and exposing the conductive circuits from the non-active surface.

摘要翻译： 公开了一种半导体器件及其制造方法。 该方法包括以下步骤：提供具有布置在其上的导电电路的载体板和具有设置在其上的焊料焊盘的有源表面的多个芯片，其中导电凸块设置在焊盘上; 将芯片安装在载板上; 用电介质层填充芯片之间的间隔，并在每个芯片周边的电介质层中形成开口以露出导电电路; 在所述电介质层的开口部和所述芯片的有源面的外围形成金属层，用于电连接所述导电凸块和所述导电电路; 并沿着芯片之间​​的电介质层切割并去除载体板以分离每个芯片并使导电电路与非活性表面相接触。

公开(公告)号：US20080169562A1

公开(公告)日：2008-07-17

申请号：US12005764

申请日：2007-12-27

申请人： Chun-Chi Ke ,  Chien-Ping Huang

发明人： Chun-Chi Ke ,  Chien-Ping Huang

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13013 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/14104 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013

摘要： A semiconductor device having conductive bumps and a fabrication method thereof are provided. The fabrication method mainly including steps of: providing a semiconductor substrate having a solder pad and a passivation layer formed thereon with a portion of the solder pads exposed from the passivation layer; disposing a first metal layer on the solder pad and a portion of the passivation layer around the solder pad; disposing a covering layer on the first metal layer and the passivation layer, and forming an aperture in the covering layer to expose a portion of the first metal layer, wherein a center of the aperture is deviated from that of the solder pad; deposing a metal pillar on the portion of the first metal layer; and deposing a solder material on an outer surface of the metal pillar for providing a better buffering effect.

摘要翻译： 提供了具有导电凸块的半导体器件及其制造方法。 该制造方法主要包括以下步骤：提供具有焊料焊盘和形成在其上的钝化层的半导体衬底，其中一部分焊料焊盘从钝化层暴露出来; 在焊料焊盘上设置第一金属层和围绕焊盘的钝化层的一部分; 在所述第一金属层和所述钝化层上设置覆盖层，以及在所述覆盖层中形成孔以暴露所述第一金属层的一部分，其中所述孔的中心偏离所述焊盘的中心; 在所述第一金属层的所述部分上沉积金属柱; 并在金属柱的外表面上沉积焊料，以提供更好的缓冲效果。

公开(公告)号：US20060258137A1

公开(公告)日：2006-11-16

申请号：US11226707

申请日：2005-09-13

申请人： Chun-Chi Ke ,  Kook-Jui Tai ,  Chien-Ping Huang

发明人： Chun-Chi Ke ,  Kook-Jui Tai ,  Chien-Ping Huang

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05548 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/14104 ,  H01L2924/0001 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/013

摘要： A semiconductor device and a fabrication method thereof ate provided. A semiconductor substrate having a plurality of bonding pads is prepared, and a first passivation layer, a second passivation layer and a metallic layer are successively formed on the semiconductor substrate. A third passivation layer is further applied on the semiconductor substrate and has a plurality of openings for exposing a portion of the metallic layer, wherein each of the openings is shifted in position from a corresponding one of the bonding pads by a distance not exceeding a radius of the bonding pad. A plurality of solder bumps are bonded to the exposed portion of the metallic layer and have a larger contact area with the third passivation layer. This provides better buffer to reduce stress exerted on the solder bumps, thereby preventing problems of cracking and delamination as in the prior art.

摘要翻译： 提供了半导体器件及其制造方法。 制备具有多个接合焊盘的半导体衬底，并且在半导体衬底上依次形成第一钝化层，第二钝化层和金属层。 第三钝化层进一步施加在半导体衬底上并且具有用于暴露金属层的一部分的多个开口，其中每个开口从对应的一个焊盘移位一定距离不超过半径 的焊盘。 多个焊料凸点与金属层的露出部分接合，并且与第三钝化层具有较大的接触面积。 这提供了更好的缓冲器以减少施加在焊料凸块上的应力，从而防止了现有技术中的开裂和分层问题。