公开(公告)号：US20130113094A1

公开(公告)日：2013-05-09

申请号：US13291508

申请日：2011-11-08

申请人： Yi-Wen WU ,  Zheng-Yi LIM ,  Ming-Che HO ,  Chung-Shi LIU

发明人： Yi-Wen WU ,  Zheng-Yi LIM ,  Ming-Che HO ,  Chung-Shi LIU

IPC分类号： H01L23/485 ,  H01L21/768

CPC分类号： H01L23/291 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/03424 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05548 ,  H01L2224/05562 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05583 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/08503 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/16503 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/2064 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device includes a conductive layer formed on the surface of a post-passivation interconnect (PPI) structure by an immersion tin process. A polymer layer is formed on the conductive layer and patterned with an opening to expose a portion of the conductive layer. A solder bump is then formed in the opening of the polymer layer to electrically connect to the PPI structure.

摘要翻译： 半导体器件包括通过浸锡工艺在钝化后互连（PPI）结构的表面上形成的导电层。 聚合物层形成在导电层上并用开口图案化以暴露导电层的一部分。 然后在聚合物层的开口中形成焊料凸块以电连接到PPI结构。

公开(公告)号：US20120178251A1

公开(公告)日：2012-07-12

申请号：US13004376

申请日：2011-01-11

申请人： Zheng-Yi LIM ,  Yi-Wen WU ,  Wen-Hsiung LU ,  Chih-Wei LIN ,  Tzong-Huann YANG ,  Hsiu-Jen LIN ,  Ming-Da CHENG ,  Chung-Shi LIU

发明人： Zheng-Yi LIM ,  Yi-Wen WU ,  Wen-Hsiung LU ,  Chih-Wei LIN ,  Tzong-Huann YANG ,  Hsiu-Jen LIN ,  Ming-Da CHENG ,  Chung-Shi LIU

IPC分类号： H01L21/768

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11824 ,  H01L2224/11827 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13583 ,  H01L2224/13693 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/01047 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01073 ,  H01L2924/01049 ,  H01L2924/0103 ,  H01L2924/01025 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01078 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01082 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： The disclosure relates to fabrication of to a metal pillar. An exemplary method of fabricating a semiconductor device comprises the steps of providing a substrate having a contact pad; forming a passivation layer extending over the substrate having an opening over the contact pad; forming a metal pillar over the contact pad and a portion of the passivation layer; forming a solder layer over the metal pillar; and causing sidewalls of the metal pillar to react with an organic compound to form a self-assembled monolayer or self-assembled multi-layers of the organic compound on the sidewalls of the metal pillar.

摘要翻译： 本公开涉及制造金属柱。 制造半导体器件的示例性方法包括以下步骤：提供具有接触焊盘的衬底; 形成在衬底上延伸的钝化层，该钝化层在接触焊盘上具有开口; 在所述接触焊盘和所述钝化层的一部分上形成金属柱; 在金属柱上形成焊料层; 并且使金属柱的侧壁与有机化合物反应，以在金属柱的侧壁上形成自组装单层或有机化合物的自组装多层。

公开(公告)号：US20110101527A1

公开(公告)日：2011-05-05

申请号：US12846353

申请日：2010-07-29

申请人： Ming-Da CHENG ,  Wen-Hsiung LU ,  Chih-Wei LIN ,  Ching-Wen CHEN ,  Yi-Wen WU ,  Chia-Tung CHANG ,  Ming-Che HO ,  Chung-Shi LIU

发明人： Ming-Da CHENG ,  Wen-Hsiung LU ,  Chih-Wei LIN ,  Ching-Wen CHEN ,  Yi-Wen WU ,  Chia-Tung CHANG ,  Ming-Che HO ,  Chung-Shi LIU

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/10145 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11827 ,  H01L2224/13006 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13647 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16507 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3651 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/05 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2224/05552

摘要： The mechanism of forming a metal bump structure described above resolves the delamination issues between a conductive layer on a substrate and a metal bump connected to the conductive layer. The conductive layer can be a metal pad, a post passivation interconnect (PPI) layer, or a top metal layer. By performing an in-situ deposition of a protective conductive layer over the conductive layer (or base conductive layer), the under bump metallurgy (UBM) layer of the metal bump adheres better to the conductive layer and reduces the occurrence of interfacial delamination. In some embodiments, a copper diffusion barrier sub-layer in the UBM layer can be removed. In some other embodiments, the UBM layer is not needed if the metal bump is deposited by a non-plating process and the metal bump is not made of copper.

摘要翻译： 上述形成金属凸块结构的机构解决了基板上的导电层与连接到导电层的金属凸块之间的分层问题。 导电层可以是金属焊盘，后钝化互连（PPI）层或顶层金属层。 通过在导电层（或基底导电层）上进行保护性导电层的原位沉积，金属凸块的凸块下金属（UBM）层更好地粘附到导电层并减少界面分层的发生。 在一些实施例中，可以去除UBM层中的铜扩散阻挡子层。 在一些其它实施例中，如果通过非电镀工艺沉积金属凸块并且金属凸块不是由铜制成的，则不需要UBM层。

公开(公告)号：US20120091577A1

公开(公告)日：2012-04-19

申请号：US13028838

申请日：2011-02-16

申请人： Chien Ling HWANG ,  Zheng-Yi LIM ,  Chung-Shi LIU

发明人： Chien Ling HWANG ,  Zheng-Yi LIM ,  Chung-Shi LIU

IPC分类号： H01L23/488 ,  H01L21/441

CPC分类号： H01L24/11 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03831 ,  H01L2224/0401 ,  H01L2224/05144 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13657 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/81193 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0539 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/20102 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/00

摘要： An integrated circuit device includes a Cu pillar and a solder layer overlying the Cu pillar. A Co-containing metallization layer is formed to cover the Cu pillar and the solder layer, and then a thermally reflow process is performed to form a solder bump and drive the Co element into the solder bump. Next, an oxidation process is performed to form a cobalt oxide layer on the sidewall surface of the Cu pillar.

摘要翻译： 集成电路器件包括Cu柱和覆盖Cu柱的焊料层。 形成含Co金属化层以覆盖Cu柱和焊料层，然后进行热回流工艺以形成焊料凸块并将Co元件驱动到焊料凸块中。 接下来，进行氧化处理以在Cu柱的侧壁表面上形成氧化钴层。

公开(公告)号：US20120007228A1

公开(公告)日：2012-01-12

申请号：US12832231

申请日：2010-07-08

申请人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Ming-Che HO ,  Chung-Shi LIU

发明人： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Ming-Che HO ,  Chung-Shi LIU

IPC分类号： H01L23/498 ,  H01L21/768 ,  H01L23/00

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/11424 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13076 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13647 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/10335 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2224/13655 ,  H01L2224/81 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05552

摘要： An embodiment of the disclosure includes a conductive pillar on a semiconductor die. A substrate is provided. A bond pad is over the substrate. A conductive pillar is over the bond pad. The conductive pillar has a top surface, edge sidewalls and a height. A cap layer is over the top surface of the conductive pillar. The cap layer extends along the edge sidewalls of the conductive pillar for a length. A solder material is over a top surface of the cap layer.

摘要翻译： 本公开的实施例包括半导体管芯上的导电柱。 提供基板。 焊盘在衬底上。 导电支柱位于接合垫上方。 导电柱具有顶表面，边缘侧壁和高度。 覆盖层在导电柱的顶表面之上。 盖层沿着导电柱的边缘侧壁延伸一段长度。 焊料材料在覆盖层的顶表面之上。

公开(公告)号：US20110278716A1

公开(公告)日：2011-11-17

申请号：US12778610

申请日：2010-05-12

申请人： Chun-Lei HSU ,  Ming-Che HO ,  Ming-Da CHENG ,  Chung-Shi LIU

发明人： Chun-Lei HSU ,  Ming-Che HO ,  Ming-Da CHENG ,  Chung-Shi LIU

IPC分类号： H01L23/485 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03424 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05559 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/1148 ,  H01L2224/1161 ,  H01L2224/11616 ,  H01L2224/11831 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/206 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method for fabricating bump structure forms an under-bump metallurgy (UBM) layer in an opening of an encapsulating layer, and then forms a bump layer on the UBM layer within the opening of the encapsulating layer. After removing excess material of the bump layer from the upper surface of the encapsulating layer, the encapsulating layer is removed till a top portion of the bump layer protrudes from the upper surface of the encapsulating layer.

摘要翻译： 一种用于制造凸块结构的方法在封装层的开口中形成凸起下金属（UBM）层，然后在封装层的开口内的UBM层上形成凸点层。 在从封装层的上表面除去突起层的多余材料之后，去除封装层直到凸起层的顶部从封装层的上表面突出。

公开(公告)号：US20110062580A1

公开(公告)日：2011-03-17

申请号：US12786818

申请日：2010-05-25

申请人： Chung-Shi LIU ,  Chien Ling HWANG ,  Ming-Che HO

发明人： Chung-Shi LIU ,  Chien Ling HWANG ,  Ming-Che HO

IPC分类号： H01L23/498

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1357 ,  H01L2224/13611 ,  H01L2224/16507 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/01083 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A protection layer formed of a CuGeyNz layer, a CuSixNz layer, a CuSixGeyNz layer or combinations thereof is formed on an under-bump metallurgy (UBM) layer for preventing the UBM layer from chemical attack and oxidation during subsequent processes.

摘要翻译： 在凸块式冶金（UBM）层上形成由CuGeyNz层，CuSixNz层，CuSixGeyNz层或其组合形成的保护层，用于防止UBM层在后续工艺中发生化学侵蚀和氧化。

公开(公告)号：US20120098124A1

公开(公告)日：2012-04-26

申请号：US13033780

申请日：2011-02-24

申请人： Yi-Wen WU ,  Hung-Jui KUO ,  Chien Ling HWANG ,  Chung-Shi LIU

发明人： Yi-Wen WU ,  Hung-Jui KUO ,  Chien Ling HWANG ,  Chung-Shi LIU

IPC分类号： H01L23/498 ,  H01L21/28

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03424 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03901 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05559 ,  H01L2224/05564 ,  H01L2224/05572 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/01046 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device has a UBM (under-bump metallization) structure underlying and electrically connected to a solder bump. The UBM structure has a first metallization layer with a first cross-sectional dimension d1, a second metallization layer with a second cross-sectional dimension d2 formed on the first metallization layer, and a third metallization layer with a third cross-sectional dimension d3 formed on the second metallization layer, in which d1 is greater than d3, and d3 is greater than d2.

摘要翻译： 半导体器件具有下面的并且与焊料凸块电连接的UBM（凸点下金属化）结构。 UBM结构具有第一横截面尺寸d1的第一金属化层，形成在第一金属化层上的第二横截面尺寸d2的第二金属化层，以及形成第三横截面尺寸d3的第三金属化层 在第二金属化层上，其中d1大于d3，d3大于d2。

公开(公告)号：US20110285011A1

公开(公告)日：2011-11-24

申请号：US12781987

申请日：2010-05-18

申请人： Chien Ling HWANG ,  Yi-Wen WU ,  Chung-Shi LIU

发明人： Chien Ling HWANG ,  Yi-Wen WU ,  Chung-Shi LIU

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L24/13 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05671 ,  H01L2224/10126 ,  H01L2224/10145 ,  H01L2224/11019 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13181 ,  H01L2224/13552 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13575 ,  H01L2224/13686 ,  H01L2224/1369 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0504 ,  H01L2924/07025 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1437 ,  H01L2924/3841 ,  H01L2924/0105 ,  H01L2924/00

摘要： An L-shaped sidewall protection process is used for Cu pillar bump technology. The L-shaped sidewall protection structure is formed of at least one of non-metal material layers, for example a dielectric material layer, a polymer material layer or combinations thereof.

摘要翻译： Cu柱凸块技术采用L形侧壁保护工艺。 L形侧壁保护结构由非金属材料层，例如介电材料层，聚合物材料层或其组合中的至少一种形成。

公开(公告)号：US20110101523A1

公开(公告)日：2011-05-05

申请号：US12940196

申请日：2010-11-05

申请人： Chien Ling HWANG ,  Yi-Wen WU ,  Chung-Shi LIU

发明人： Chien Ling HWANG ,  Yi-Wen WU ,  Chung-Shi LIU

IPC分类号： H01L23/52

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/10145 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11827 ,  H01L2224/13006 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13647 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16507 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3651 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/05 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2224/05552

摘要： A copper pillar bump has a surface covered with by a barrier layer formed of a copper-containing material layer including a group III element, a group IV element, a group V element or combinations thereof. The barrier layer depresses the copper diffusion and reaction with solder to reduce the thickness of intermetallic compound between the pillar pump and solder.

摘要翻译： 铜柱凸起具有由包含III族元素，IV族元素，V族元素或其组合的含铜材料层形成的阻挡层覆盖的表面。 阻挡层下降铜扩散和与焊料的反应，以减小柱式泵和焊料之间的金属间化合物的厚度。