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公开(公告)号:US20190237324A1
公开(公告)日:2019-08-01
申请号:US16254167
申请日:2019-01-22
申请人: KYOCERA Corporation
发明人: Masahiro ARAKI
IPC分类号: H01L21/02 , H01L21/033 , C30B25/04 , C30B25/18 , C30B29/40
CPC分类号: H01L21/0262 , C30B25/04 , C30B25/18 , C30B29/406 , H01L21/02507 , H01L21/0254 , H01L21/0337
摘要: A semiconductor device manufacturing method according to the present disclosure includes: preparing a substrate having a surface layer at least made of semiconductor; forming a mask pattern having a plurality of openings on the surface layer using materials free of semiconductor vapor-phase growth; forming a brittle portion in each opening by a vapor-phase growth process; forming crystal growth-derived layer on the mask pattern by a vapor-phase growth process by growth of semiconductor crystals on a surface of the brittle portion ; and separating, at brittle portion, a crystal growth-derived layer from substrate.
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公开(公告)号:US20190221648A1
公开(公告)日:2019-07-18
申请号:US16226265
申请日:2018-12-19
发明人: Jia-Zhe Liu , Yen Lun Huang , Chih-Yuan Chuang , Che Ming Liu , Wen-Ching Hsu , Manhsuan Lin
IPC分类号: H01L29/205 , H01L29/20 , H01L21/02
CPC分类号: H01L29/205 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L29/2003
摘要: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x≤1 and y≥0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.
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公开(公告)号:US20190157080A1
公开(公告)日:2019-05-23
申请号:US15869057
申请日:2018-01-12
发明人: Kun-Chuan Lin , Jin-Hsiang Liu , Yu-Lin Hsiao
IPC分类号: H01L21/02 , H01L29/20 , H01L29/205 , H01L29/15
CPC分类号: H01L21/02507 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/155 , H01L29/2003 , H01L29/205
摘要: A nitride semiconductor structure includes a substrate, a nitride semiconductor layer, and a buffer stack layer between the substrate and the nitride semiconductor layer. The buffer stack layer includes a plurality of metal nitride multilayers repeatedly stacked, wherein each of the metal nitride multilayers consists of a first, a second, and a third metal nitride thin films in sequence, or consists of the first, the third, the second, and the third metal nitride thin films in sequence. The aluminum concentration of the first metal nitride thin film is higher than that of the third metal nitride thin film, and the aluminum concentration of the third metal nitride thin film is higher than that of the second metal nitride thin film.
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4.
公开(公告)号:US20190109208A1
公开(公告)日:2019-04-11
申请号:US16089374
申请日:2017-02-15
发明人: Hong WANG , Quanbin ZHOU , Qixin LI
IPC分类号: H01L29/66 , H01L29/20 , H01L29/778 , H01L29/205 , H01L21/02
CPC分类号: H01L29/66431 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L29/205 , H01L29/4236 , H01L29/66462 , H01L29/778 , H01L29/7786
摘要: An enhancement-mode GaN-based HEMT device on Si substrate and a manufacturing method thereof. The device includes a Si substrate, an AlN nucleation layer, AlGaN transition layers, an AlGaN buffer layer, a low temperature AlN insertion layer, an AlGaN main buffer layer, an AlGaN/GaN superlattice layer, an GaN channel layer), and an AlGaN barrier layer. Both sides of a top end of the HEMT device are a source electrode and a drain electrode respectively, and a middle of the top end is a gate electrode. A middle of the AlGaN barrier layer is etched through to form a recess, and a bottom of the recess is connected to the GaN channel layer. A passivation protective layer and a gate dielectric layer are deposited on the bottom of the recess, and the gate electrode is located above the dielectric layer.
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5.
公开(公告)号:US20190051794A1
公开(公告)日:2019-02-14
申请号:US16154558
申请日:2018-10-08
发明人: Petar Atanackovic , Matthew Godfrey
IPC分类号: H01L33/06 , H01L21/02 , H01L33/00 , H01L33/18 , H01L33/14 , H01L33/10 , H01L27/15 , H01L33/32 , H01L33/16
CPC分类号: H01L33/06 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02472 , H01L21/02483 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02554 , H01L21/02565 , H01L27/15 , H01L33/007 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/18 , H01L33/32
摘要: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.
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公开(公告)号:US20180337082A1
公开(公告)日:2018-11-22
申请号:US15755860
申请日:2016-08-30
申请人: STC.UNM
IPC分类号: H01L21/683 , H01L31/0352 , H01L31/0304 , H01L31/18 , H01L27/146
CPC分类号: H01L21/02631 , H01L21/02398 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/02664 , H01L21/6835 , H01L2221/6835 , H01L2221/68368
摘要: A method for forming a semiconductor structure, includes: providing a host substrate; forming at least one sacrificial layer having two or more group-V species over the host substrate; forming at least one semiconductor layer over the at least one sacrificial layer; and transferring at least a portion of the at least one semiconductor layer from the host substrate onto an alternate substrate.
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公开(公告)号:US10070820B2
公开(公告)日:2018-09-11
申请号:US14265234
申请日:2014-04-29
发明人: Juang-Tang Huang
CPC分类号: H01L31/035236 , A61B5/05 , A61B5/14514 , A61B5/14532 , A61B5/14546 , A61B5/150022 , A61B5/150282 , A61B5/150969 , A61B5/150984 , A61B5/6833 , A61B5/6849 , A61B5/685 , A61B2562/046 , A61B2562/125 , H01L21/02392 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L31/03046 , H01L31/105 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要: Transdermal microneedles continuous monitoring system is provided. The continuous system monitoring includes a substrate, a microneedle unit, a signal processing unit and a power supply unit. The microneedle unit at least comprises a first microneedle set used as a working electrode and a second microneedle set used as a reference electrode, the first and second microneedle sets arranging on the substrate. Each microneedle set comprises at least a microneedle. The first microneedle set comprises at least a sheet having a through hole on which a barbule forms at the edge. One of the sheets provides the through hole from which the barbules at the edge of the other sheets go through, and the barbules are disposed separately.
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公开(公告)号:US10014439B2
公开(公告)日:2018-07-03
申请号:US15215968
申请日:2016-07-21
发明人: Joseph M. Freund , John M. DeLucca
CPC分类号: H01L33/145 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/02513 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/2205 , H01L29/15
摘要: Aspects of the disclosure pertain to a system and method for providing an electron blocking layer with doping control. The electron blocking layer is included in a semiconductor assembly. The electron blocking layer includes a lithium aluminate layer. The lithium aluminate layer promotes reduced diffusion of magnesium into a layer stack of the semiconductor assembly.
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公开(公告)号:US09991416B2
公开(公告)日:2018-06-05
申请号:US15632127
申请日:2017-06-23
发明人: Taeksoo Ji , Jinyoung Park , Jinhong Lee , Wangki Kim , Jaesam Shim , Kwangjae Lee
CPC分类号: H01L33/04 , H01L21/02507 , H01L21/0251 , H01L33/0025 , H01L33/007 , H01L33/06 , H01L33/12 , H01L33/32
摘要: A light emitting diode and a method of manufacturing the light emitting diode are provided. The light emitting diode includes an n-type semiconductor layer, an inclined type superlattice thin film layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is disposed on a substrate. The inclined type superlattice thin film layer is disposed on the n-type semiconductor layer and includes a plurality of thin film pairs in which InGaN thin films and GaN thin films are sequentially stacked. The active layer having a quantum well structure is disposed on the inclined type superlattice thin film layer. The p-type semiconductor layer is disposed on the active layer. Composition ratio of Indium (In) included in the InGaN thin film is increased as getting closer to the active layer. Thus, internal residual strain is reduced, and quantum confinement effect is enhanced, and internal quantum efficiency is increased.
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10.
公开(公告)号:US09978894B2
公开(公告)日:2018-05-22
申请号:US15470628
申请日:2017-03-27
申请人: Robbie J. Jorgenson
发明人: Robbie J. Jorgenson
IPC分类号: H01L31/0304 , H01L21/02 , H01L31/0352 , H01L31/18 , H01L33/00 , H01L33/06 , H01L33/10 , B82Y20/00 , G02B6/122 , H01L29/20 , H01L33/32 , H01L41/187 , H01L31/0232 , H03H9/02
CPC分类号: H01L31/03044 , B82Y20/00 , G02B6/1225 , H01L21/0237 , H01L21/02458 , H01L21/02491 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L31/02327 , H01L31/035209 , H01L31/1856 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/10 , H01L33/32 , H01L41/187 , H01L2933/0058 , H03H9/02015 , H03H9/02543
摘要: The present invention provides materials, structures, and methods for III-nitride-based devices, including epitaxial and non-epitaxial structures useful for III-nitride devices including light emitting devices, laser diodes, transistors, detectors, sensors, and the like. In some embodiments, the present invention provides metallo-semiconductor and/or metallo-dielectric devices, structures, materials and methods of forming metallo-semiconductor and/or metallo-dielectric material structures for use in semiconductor devices, and more particularly for use in III-nitride based semiconductor devices. In some embodiments, the present invention includes materials, structures, and methods for improving the crystal quality of epitaxial materials grown on non-native substrates. In some embodiments, the present invention provides materials, structures, devices, and methods for acoustic wave devices and technology, including epitaxial and non-epitaxial piezoelectric materials and structures useful for acoustic wave devices. In some embodiments, the present invention provides metal-base transistor devices, structures, materials and methods of forming metal-base transistor material structures for use in semiconductor devices.
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