公开(公告)号：US20080079461A1

公开(公告)日：2008-04-03

申请号：US11864926

申请日：2007-09-29

申请人： Mou-Shiung Lin ,  Jin-Yuan Lee ,  Chien-Kang Chou

发明人： Mou-Shiung Lin ,  Jin-Yuan Lee ,  Chien-Kang Chou

IPC分类号： H03K19/0175

CPC分类号： H01L23/552 ,  H01L21/76816 ,  H01L21/76873 ,  H01L23/5283 ,  H01L23/5286 ,  H01L23/53238 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L27/0251 ,  H01L2224/02166 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/1148 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48764 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/01039 ,  H01L2924/00 ,  H01L2224/05552

摘要： An integrated circuit chip includes a silicon substrate, a first circuit in or over said silicon substrate, a second circuit device in or over said silicon substrate, a dielectric structure over said silicon substrate, a first interconnecting structure in said dielectric structure, a first pad connected to said first node of said voltage regulator through said first interconnecting structure, a second interconnecting structure in said dielectric structure, a second pad connected to said first node of said internal circuit through said second interconnecting structure, a passivation layer over said dielectric structure, wherein multiple opening in said passivation layer exposes said first and second pads, and a third interconnecting structure over said passivation layer and over said first and second pads.

摘要翻译： 集成电路芯片包括硅衬底，位于所述硅衬底中或之上的第一电路，位于所述硅衬底中或之上的第二电路器件，所述硅衬底上的电介质结构，所述电介质结构中的第一互连结构，第一衬垫 通过所述第一互连结构连接到所述电压调节器的所述第一节点，所述电介质结构中的第二互连结构，通过所述第二互连结构连接到所述内部电路的所述第一节点的第二焊盘，所述电介质结构上的钝化层， 其中所述钝化层中的多个开口暴露所述第一和第二焊盘，以及在所述钝化层上方以及所述第一和第二焊盘之上的第三互连结构。

公开(公告)号：US07208834B2

公开(公告)日：2007-04-24

申请号：US10874704

申请日：2004-06-22

申请人： Jin-Yuan Lee ,  Chien-Kang Chou ,  Shih-Hsiung Lin ,  Hsi-Shan Kuo

发明人： Jin-Yuan Lee ,  Chien-Kang Chou ,  Shih-Hsiung Lin ,  Hsi-Shan Kuo

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L25/0657 ,  H01L24/11 ,  H01L24/13 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05684 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11849 ,  H01L2224/11906 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13099 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13609 ,  H01L2224/16145 ,  H01L2224/16237 ,  H01L2224/81191 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/013

摘要： A cylindrical bonding structure and its method of manufacture. The cylindrical bonding structure is formed over the bonding pad of a silicon chip and the chip is flipped over to connect with a substrate board in the process of forming a flip-chip package. The cylindrical bonding structure mainly includes a conductive pillar and a solder cap. The conductive pillar is formed over the bonding pad of the silicon chip and the solder cap is attached to the upper end of the conductive pillar. The solder cap has a melting point lower than the conductive pillar. The solder cap can be configured into a cylindrical, spherical or hemispherical shape. To fabricate the cylindrical bonding structure, a patterned mask layer having a plurality of openings that correspond in position to the bonding pads on the wafer is formed over a silicon wafer. Conductive material is deposited into the openings to form conductive pillars and finally a solder cap is attached to the end of each conductive pillar.

摘要翻译： 圆柱形粘结结构及其制造方法。 在硅芯片的接合焊盘上形成圆柱形接合结构，并且在形成倒装芯片封装的过程中将芯片翻转以与衬底板连接。 圆柱形接合结构主要包括导电柱和焊帽。 导电柱形成在硅芯片的接合焊盘上，并且焊接帽附接到导电柱的上端。 焊锡帽的熔点低于导电柱。 焊帽可以被配置成圆柱形，球形或半球形。 为了制造圆柱形接合结构，在硅晶片上形成具有与位于晶片上的接合焊盘相对应的多个开口的图案化掩模层。 导电材料沉积到开口中以形成导电柱，最后在每个导电柱的末端附着焊帽。

公开(公告)号：US20060291029A1

公开(公告)日：2006-12-28

申请号：US11430513

申请日：2006-05-08

申请人： Mou-Shiung Lin ,  Chien-Kang Chou ,  Ke-Hung Chen

发明人： Mou-Shiung Lin ,  Chien-Kang Chou ,  Ke-Hung Chen

IPC分类号： G02B26/08

CPC分类号： H01L23/5227 ,  H01L21/2885 ,  H01L21/563 ,  H01L21/76801 ,  H01L21/76885 ,  H01L23/3114 ,  H01L23/5223 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/05183 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45176 ,  H01L2224/45183 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2224/83851 ,  H01L2224/05552 ,  H01L2224/05599

摘要： A post passivation rerouting support structure comprises a relatively thin support layer above the passivation layer to support the RDL, and a relatively thick support layer for fine pitch interconnects extending from the RDL and terminating as contact structures at the surface of the thick support layer, for a next level packaging structure. The thick support layer is planarized before defining the contact structures. The thick support layer may be formed after the conducting posts have been formed, or the thick support layer is formed before forming the conducting posts in vias formed in the thick support layer. An encapsulating layer may be provided above the thick support layer, which top surface is planarized before defining the contact structures. The encapsulating layer and the further support layer may be the same layer.

公开(公告)号：US20060148247A1

公开(公告)日：2006-07-06

申请号：US11364375

申请日：2006-02-28

申请人： Hsien-Tsung Liu ,  Chien-Kang Chou ,  Ching-San Lin

发明人： Hsien-Tsung Liu ,  Chien-Kang Chou ,  Ching-San Lin

IPC分类号： H01L21/4763

CPC分类号： C23C14/564 ,  C23C14/022 ,  H01L21/0206 ,  H01L21/2855 ,  H01L21/316 ,  H01L21/32051 ,  H01L24/11 ,  H01L2224/02126 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/013

摘要： A method of metal sputtering, comprising the following steps. A wafer holder and inner walls of a chamber are coated with a seasoning layer comprised of: a) a material etchable in a metal barrier layer etch process; or b) an insulating or non-conductive material. A wafer having two or more wafer conductive structures is placed upon the seasoning layer coated wafer holder. The wafer is cleaned wherein a portion of the seasoning layer is re-deposited upon the wafer over and between adjacent wafer conductive structures. A metal barrier layer is formed over the wafer. The wafer is removed from the chamber and at least two adjacent upper metal structures are formed over at least one portion of the metal barrier layer. The portions of the metal barrier layer not under the at least two adjacent upper metal structures are etched and removed from over the wafer exposing portions of the re-deposited seasoning layer portions using the metal barrier layer etch process which also removes any exposed portions of the re-deposited seasoning layer portions that are comprised of a material etchable in the metal barrier layer etch process.

摘要翻译： 一种金属溅射方法，包括以下步骤。 晶片保持器和室的内壁涂覆有调味层，调味层包括：a）可在金属阻挡层蚀刻工艺中蚀刻的材料; 或b）绝缘或非导电材料。 将具有两个或更多个晶片导电结构的晶片放置在调味层涂覆的晶片保持器上。 清洁晶片，其中一部分调味层在相邻的晶片导电结构之上和相邻的晶片导电结构之间重新沉积在晶片上。 在晶片上形成金属阻挡层。 将晶片从腔室中取出，并且在金属阻挡层的至少一部分上形成至少两个相邻的上部金属结构。 金属阻挡层不在至少两个相邻的上部金属结构之下的部分被蚀刻并从晶片的上方移除，使用金属阻挡层蚀刻工艺暴露部分再沉积的调节层部分，其也去除了 由金属阻挡层蚀刻工艺中可蚀刻的材料组成的再沉积的调味层部分。

公开(公告)号：US20050040033A1

公开(公告)日：2005-02-24

申请号：US10954781

申请日：2004-09-30

申请人： Hsien-Tsung Liu ,  Chien-Kang Chou ,  Ching-San Lin

发明人： Hsien-Tsung Liu ,  Chien-Kang Chou ,  Ching-San Lin

IPC分类号： C23C14/02 ,  C23C14/56 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/60 ,  C23C14/32

CPC分类号： C23C14/564 ,  C23C14/022 ,  H01L21/0206 ,  H01L21/2855 ,  H01L21/316 ,  H01L21/32051 ,  H01L24/11 ,  H01L2224/02126 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/013

摘要： A method of metal sputtering, comprising the following steps. A wafer holder and inner walls of a chamber are coated with a seasoning layer comprised of: a) a material etchable in a metal barrier layer etch process; or b) an insulating or non-conductive material. A wafer having two or more wafer conductive structures is placed upon the seasoning layer coated wafer holder. The wafer is cleaned wherein a portion of the seasoning layer is re-deposited upon the wafer over and between adjacent wafer conductive structures. A metal barrier layer is formed over the wafer. The wafer is removed from the chamber and at least two adjacent upper metal structures are formed over at least one portion of the metal barrier layer. The portions of the metal barrier layer not under the at least two adjacent upper metal structures are etched and removed from over the wafer exposing portions of the re-deposited seasoning layer portions using the metal barrier layer etch process which also removes any exposed portions of the re-deposited seasoning layer portions that are comprised of a material etchable in the metal barrier layer etch process.

摘要翻译： 一种金属溅射方法，包括以下步骤。 晶片保持器和室的内壁涂覆有调味层，调味层包括：a）可在金属阻挡层蚀刻工艺中蚀刻的材料; 或b）绝缘或非导电材料。 将具有两个或更多个晶片导电结构的晶片放置在调味层涂覆的晶片保持器上。 清洁晶片，其中一部分调味层在相邻的晶片导电结构之上和相邻的晶片导电结构之间重新沉积在晶片上。 在晶片上形成金属阻挡层。 将晶片从腔室中取出，并且在金属阻挡层的至少一部分上形成至少两个相邻的上部金属结构。 金属阻挡层不在至少两个相邻的上部金属结构之下的部分被蚀刻并从晶片的上方移除，使用金属阻挡层蚀刻工艺暴露部分再沉积的调节层部分，其也去除了 由金属阻挡层蚀刻工艺中可蚀刻的材料组成的再沉积的调味层部分。

公开(公告)号：US20050026413A1

公开(公告)日：2005-02-03

申请号：US10874704

申请日：2004-06-22

申请人： Jin-Yuan Lee ,  Chien-Kang Chou ,  Shih-Hsiung Lin ,  Hsi-Shan Kuo

发明人： Jin-Yuan Lee ,  Chien-Kang Chou ,  Shih-Hsiung Lin ,  Hsi-Shan Kuo

IPC分类号： H01L21/60 ,  H01L21/98 ,  H01L23/485 ,  H01L25/065 ,  H01L21/44

CPC分类号： H01L25/0657 ,  H01L24/11 ,  H01L24/13 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05684 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11849 ,  H01L2224/11906 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13099 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13609 ,  H01L2224/16145 ,  H01L2224/16237 ,  H01L2224/81191 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/013

摘要： A cylindrical bonding structure and its method of manufacture. The cylindrical bonding structure is formed over the bonding pad of a silicon chip and the chip is flipped over to connect with a substrate board in the process of forming a flip-chip package. The cylindrical bonding structure mainly includes a conductive pillar and a solder cap. The conductive pillar is formed over the bonding pad of the silicon chip and the solder cap is attached to the upper end of the conductive pillar. The solder cap has a melting point lower than the conductive pillar. The solder cap can be configured into a cylindrical, spherical or hemispherical shape. To fabricate the cylindrical bonding structure, a patterned mask layer having a plurality of openings that correspond in position to the bonding pads on the wafer is formed over a silicon wafer. Conductive material is deposited into the openings to form conductive pillars and finally a solder cap is attached to the end of each conductive pillar.

摘要翻译： 圆柱形粘结结构及其制造方法。 在硅芯片的接合焊盘上形成圆柱形接合结构，并且在形成倒装芯片封装的过程中将芯片翻转以与衬底板连接。 圆柱形接合结构主要包括导电柱和焊帽。 导电柱形成在硅芯片的接合焊盘上，并且焊接帽附接到导电柱的上端。 焊锡帽的熔点低于导电柱。 焊帽可以被配置成圆柱形，球形或半球形。 为了制造圆柱形接合结构，在硅晶片上形成具有与位于晶片上的接合焊盘相对应的多个开口的图案化掩模层。 导电材料沉积到开口中以形成导电柱，最后在每个导电柱的末端附着焊帽。

公开(公告)号：US08890336B2

公开(公告)日：2014-11-18

申请号：US12132628

申请日：2008-06-04

申请人： Jin-Yuan Lee ,  Chien-Kang Chou ,  Shih-Hsiung Lin ,  Hsi-Shan Kuo

发明人： Jin-Yuan Lee ,  Chien-Kang Chou ,  Shih-Hsiung Lin ,  Hsi-Shan Kuo

IPC分类号： H01L23/48 ,  H01L25/00 ,  H01L25/065 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L24/11 ,  H01L24/13 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05684 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11849 ,  H01L2224/11906 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13099 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13609 ,  H01L2224/16145 ,  H01L2224/16237 ,  H01L2224/81191 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/013

摘要： A cylindrical bonding structure and its method of manufacture. The cylindrical bonding structure is formed over the bonding pad of a silicon chip and the chip is flipped over to connect with a substrate board in the process of forming a flip-chip package. The cylindrical bonding structure mainly includes a conductive cylinder and a solder block. The conductive cylinder is formed over the bonding pad of the silicon chip and the solder block is attached to the upper end of the conductive cylinder. The solder block has a melting point lower than the conductive cylinder. The solder block can be configured into a cylindrical, spherical or hemispherical shape. To fabricate the cylindrical bonding structure, a patterned mask layer having a plurality of openings that correspond in position to the bonding pads on the wafer is formed over a silicon wafer. Conductive material is deposited into the openings to form conductive cylinders and finally a solder block is attached to the end of each conductive cylinder.

摘要翻译： 圆柱形粘结结构及其制造方法。 在硅芯片的接合焊盘上形成圆柱形接合结构，并且在形成倒装芯片封装的过程中将芯片翻转以与衬底板连接。 圆柱形接合结构主要包括导电圆柱体和焊料块。 导电圆柱体形成在硅芯片的接合焊盘上，并且焊接块附接到导电圆柱体的上端。 焊料块的熔点低于导电圆柱体。 焊料块可以配置成圆柱形，球形或半球形。 为了制造圆柱形接合结构，在硅晶片上形成具有与位于晶片上的接合焊盘相对应的多个开口的图案化掩模层。 将导电材料沉积到开口中以形成导电圆柱体，最后在每个导电圆柱体的末端附着焊块。

公开(公告)号：US08723322B2

公开(公告)日：2014-05-13

申请号：US11364375

申请日：2006-02-28

申请人： Hsien-Tsung Liu ,  Chien-Kang Chou ,  Ching-San Lin

发明人： Hsien-Tsung Liu ,  Chien-Kang Chou ,  Ching-San Lin

IPC分类号： H01L23/48

CPC分类号： C23C14/564 ,  C23C14/022 ,  H01L21/0206 ,  H01L21/2855 ,  H01L21/316 ,  H01L21/32051 ,  H01L24/11 ,  H01L2224/02126 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/013

摘要： A method of metal sputtering, comprising the following steps. A wafer holder and inner walls of a chamber are coated with a seasoning layer comprised of: a) a material etchable in a metal barrier layer etch process; or b) an insulating or non-conductive material. A wafer having two or more wafer conductive structures is placed upon the seasoning layer coated wafer holder. The wafer is cleaned wherein a portion of the seasoning layer is re-deposited upon the wafer over and between adjacent wafer conductive structures. A metal barrier layer is formed over the wafer. The wafer is removed from the chamber and at least two adjacent upper metal structures are formed over at least one portion of the metal barrier layer. The portions of the metal barrier layer not under the at least two adjacent upper metal structures are etched and removed from over the wafer exposing portions of the re-deposited seasoning layer portions using the metal barrier layer etch process which also removes any exposed portions of the re-deposited seasoning layer portions that are comprised of a material etchable in the metal barrier layer etch process.

摘要翻译： 一种金属溅射方法，包括以下步骤。 晶片保持器和室的内壁涂覆有调味层，调味层包括：a）可在金属阻挡层蚀刻工艺中蚀刻的材料; 或b）绝缘或非导电材料。 将具有两个或更多个晶片导电结构的晶片放置在调味层涂覆的晶片保持器上。 清洁晶片，其中一部分调味层在相邻的晶片导电结构之上和相邻的晶片导电结构之间重新沉积在晶片上。 在晶片上形成金属阻挡层。 将晶片从腔室中取出，并且在金属阻挡层的至少一部分上形成至少两个相邻的上部金属结构。 金属阻挡层不在至少两个相邻的上部金属结构之下的部分被蚀刻并从晶片的上方移除，使用金属阻挡层蚀刻工艺暴露部分再沉积的调节层部分，其也去除了 由金属阻挡层蚀刻工艺中可蚀刻的材料组成的再沉积的调味层部分。

公开(公告)号：US08558383B2

公开(公告)日：2013-10-15

申请号：US12264271

申请日：2008-11-04

申请人： Mou-Shiung Lin ,  Chien-Kang Chou ,  Ke-Hung Chen

发明人： Mou-Shiung Lin ,  Chien-Kang Chou ,  Ke-Hung Chen

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/5227 ,  H01L21/2885 ,  H01L21/563 ,  H01L21/76801 ,  H01L21/76885 ,  H01L23/3114 ,  H01L23/5223 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/05183 ,  H01L2224/05548 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45176 ,  H01L2224/45183 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2224/83851 ,  H01L2224/05552 ,  H01L2224/05599

摘要： A post passivation rerouting support structure comprises a relatively thin support layer above the passivation layer to support the RDL, and a relatively thick support layer for fine pitch interconnects extending from the RDL and terminating as contact structures at the surface of the thick support layer, for a next level packaging structure. The thick support layer is planarized before defining the contact structures. The thick support layer may be formed after the conducting posts have been formed, or the thick support layer is formed before forming the conducting posts in vias formed in the thick support layer. An encapsulating layer may be provided above the thick support layer, which top surface is planarized before defining the contact structures. The encapsulating layer and the further support layer may be the same layer.

摘要翻译： 后钝化重路由支持结构包括钝化层上方相对薄的支撑层以支撑RDL，以及用于从RDL延伸并作为接触结构终止于厚支撑层表面的细间距互连的相对较厚的支撑层，用于 下一级包装结构。 在限定接触结构之前，将厚支撑层平坦化。 可以在形成导电柱之后形成厚的支撑层，或者在形成在厚支撑层中的通孔中形成导电柱之前形成厚的支撑层。 可以在厚支撑层之上设置封装层，在限定接触结构之前该顶表面被平坦化。 封装层和另外的支撑层可以是相同的层。

公开(公告)号：US20110215476A1

公开(公告)日：2011-09-08

申请号：US13108743

申请日：2011-05-16

申请人： Jin-Yuan Lee ,  Chien-Kang Chou ,  Shih-Hsiung Lin ,  Hsi-Shan Kuo

发明人： Jin-Yuan Lee ,  Chien-Kang Chou ,  Shih-Hsiung Lin ,  Hsi-Shan Kuo

IPC分类号： H01L23/488

CPC分类号： H01L25/0657 ,  H01L24/11 ,  H01L24/13 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05684 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11849 ,  H01L2224/11906 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13099 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13609 ,  H01L2224/16145 ,  H01L2224/16237 ,  H01L2224/81191 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/013

摘要： A cylindrical bonding structure and its method of manufacture. The cylindrical bonding structure is formed over the bonding pad of a silicon chip and the chip is flipped over to connect with a substrate board in the process of forming a flip-chip package. The cylindrical bonding structure mainly includes a conductive pillar and a solder cap. The conductive pillar is formed over the bonding pad of the silicon chip and the solder cap is attached to the upper end of the conductive pillar. The solder cap has a melting point lower than the conductive pillar. The solder cap can be configured into a cylindrical, spherical or hemispherical shape. To fabricate the cylindrical bonding structure, a patterned mask layer having a plurality of openings that correspond in position to the bonding pads on the wafer is formed over a silicon wafer. Conductive material is deposited into the openings to form conductive pillars and finally a solder cap is attached to the end of each conductive pillar.

摘要翻译： 圆柱形粘结结构及其制造方法。 在硅芯片的接合焊盘上形成圆柱形接合结构，并且在形成倒装芯片封装的过程中将芯片翻转以与衬底板连接。 圆柱形接合结构主要包括导电柱和焊帽。 导电柱形成在硅芯片的接合焊盘上，并且焊接帽附接到导电柱的上端。 焊锡帽的熔点低于导电柱。 焊帽可以被配置成圆柱形，球形或半球形。 为了制造圆柱形接合结构，在硅晶片上形成具有与位于晶片上的接合焊盘相对应的多个开口的图案化掩模层。 导电材料沉积到开口中以形成导电柱，最后在每个导电柱的末端附着焊帽。