公开(公告)号：US08513119B2

公开(公告)日：2013-08-20

申请号：US12331900

申请日：2008-12-10

申请人： Hung-Pin Chang ,  Kuo-Ching Hsu ,  Chen-Shien Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

发明人： Hung-Pin Chang ,  Kuo-Ching Hsu ,  Chen-Shien Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC分类号： H01L21/44

CPC分类号： H01L23/5384 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/481 ,  H01L24/11 ,  H01L24/12 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/0231 ,  H01L2224/02311 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05027 ,  H01L2224/0557 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/1401 ,  H01L2224/1701 ,  H01L2224/81001 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A bump structure that may be used for stacked die configurations is provided. Through-silicon vias are formed in a semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the through-silicon vias. An isolation film is formed over the backside of the semiconductor substrate and the exposed portion of the through-silicon vias. The isolation film is thinned to re-expose the through-silicon vias. Bump pads and redistribution lines are formed on the backside of the semiconductor substrate providing an electrical connection to the through-silicon vias. Another isolation film is deposited and patterned, and a barrier layer is formed to provide contact pads for connecting to an external device, e.g., another die/wafer or circuit board.

摘要翻译： 提供了可用于堆叠管芯配置的凸块结构。 通孔形成在半导体衬底中。 半导体衬底的背面变薄以暴露通硅通孔。 在半导体衬底的背面和通过硅通孔的暴露部分之后形成隔离膜。 隔离膜被稀释以重新暴露通硅通孔。 在半导体衬底的背面上形成凸起焊盘和再分布线，提供与通孔硅通孔的电连接。 沉积和图案化另一个隔离膜，并且形成阻挡层以提供用于连接到外部装置（例如另一个芯片/晶片或电路板）的接触焊盘。

公开(公告)号：US08461045B2

公开(公告)日：2013-06-11

申请号：US13050424

申请日：2011-03-17

申请人： Kuo-Ching Hsu ,  Chen-Shien Chen ,  Hon-Lin Huang

发明人： Kuo-Ching Hsu ,  Chen-Shien Chen ,  Hon-Lin Huang

IPC分类号： H01L21/44 ,  H01L29/41 ,  H01L21/768

CPC分类号： H01L24/11 ,  H01L23/481 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/0231 ,  H01L2224/02311 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05022 ,  H01L2224/13024 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2224/13155 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043

摘要： An integrated circuit structure includes a semiconductor substrate having a front side and a backside. A through-silicon via (TSV) penetrates the semiconductor substrate, wherein the TSV has a back end extending to the backside of the semiconductor substrate. A redistribution line (RDL) is formed over the backside of the semiconductor substrate and connected to the back end of the TSV. A passivation layer is over the RDL with an opening formed in the passivation layer, wherein a portion of a top surface of the RDL and a sidewall of the RDL are exposed through the opening. A metal finish is formed in the opening and contacting the portion of the top surface and the sidewall of the RDL.

摘要翻译： 集成电路结构包括具有正面和背面的半导体衬底。 穿透硅通孔（TSV）穿透半导体衬底，其中TSV具有延伸到半导体衬底背面的后端。 再分配线（RDL）形成在半导体衬底的背面上并连接到TSV的后端。 钝化层在RDL上方，其中在钝化层中形成有开口，其中RDL的顶表面的一部分和RDL的侧壁通过开口露出。 在开口处形成金属表面，并与RDL的顶表面和侧壁的部分接触。

公开(公告)号：US20130062741A1

公开(公告)日：2013-03-14

申请号：US13228757

申请日：2011-09-09

申请人： Sheng-Yu Wu ,  Tin-Hao Kuo ,  Chen-Shien Chen ,  Ming-Da Cheng

发明人： Sheng-Yu Wu ,  Tin-Hao Kuo ,  Chen-Shien Chen ,  Ming-Da Cheng

IPC分类号： H01L23/495 ,  H01L21/60 ,  H01L21/98 ,  H01L23/488

CPC分类号： H01L23/49838 ,  H01L24/13 ,  H01L24/14 ,  H01L24/81 ,  H01L2224/13014 ,  H01L2224/13147 ,  H01L2224/141 ,  H01L2224/14136 ,  H01L2224/14145 ,  H01L2224/14156 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Semiconductor devices and methods of manufacturing and packaging thereof are disclosed. In one embodiment, a semiconductor device includes an integrated circuit and a plurality of copper pillars coupled to a surface of the integrated circuit. The plurality of copper pillars has an elongated shape. At least 50% of the plurality of copper pillars is arranged in a substantially centripetal orientation.

摘要翻译： 公开了半导体器件及其制造和封装方法。 在一个实施例中，半导体器件包括集成电路和耦合到集成电路的表面的多个铜柱。 多个铜柱具有细长的形状。 多个铜柱中的至少50％以大致向心的方向排列。

公开(公告)号：US20130043583A1

公开(公告)日：2013-02-21

申请号：US13211438

申请日：2011-08-17

申请人： Sheng-Yu Wu ,  Tin-Hao Kuo ,  Chita Chuang ,  Chen-Shien Chen

发明人： Sheng-Yu Wu ,  Tin-Hao Kuo ,  Chita Chuang ,  Chen-Shien Chen

IPC分类号： H01L23/498 ,  H01L21/50 ,  H01L21/60

CPC分类号： H01L24/17 ,  H01L21/563 ,  H01L23/3171 ,  H01L23/522 ,  H01L23/53238 ,  H01L23/562 ,  H01L23/585 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L2021/60255 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05541 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/06102 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/141 ,  H01L2224/14152 ,  H01L2224/14179 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/17104 ,  H01L2224/17517 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/81101 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/35 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/206 ,  H01L2924/00

摘要： A device includes a metal pad over a substrate. A passivation layer includes a portion over the metal pad. A post-passivation interconnect (PPI) is electrically coupled to the metal pad, wherein the PPI comprises a portion over the metal pad and the passivation layer. A polymer layer is over the PPI. A dummy bump is over the polymer layer, wherein the dummy bump is electrically insulated from conductive features underlying the polymer layer.

公开(公告)号：US08334170B2

公开(公告)日：2012-12-18

申请号：US12163464

申请日：2008-06-27

申请人： Dean Wang ,  Chien-Hsiun Lee ,  Chen-Shien Chen ,  Clinton Chao ,  Mirng-Ji Lii ,  Tjandra Winata Karta

发明人： Dean Wang ,  Chien-Hsiun Lee ,  Chen-Shien Chen ,  Clinton Chao ,  Mirng-Ji Lii ,  Tjandra Winata Karta

IPC分类号： H01L23/498 ,  H01L21/56

CPC分类号： H01L23/49811 ,  H01L23/481 ,  H01L24/27 ,  H01L24/29 ,  H01L24/33 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/95 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/27416 ,  H01L2224/27436 ,  H01L2224/27848 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/75744 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/8321 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/83986 ,  H01L2224/9205 ,  H01L2224/9211 ,  H01L2224/9221 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device is provided which includes providing a first device, a second device, and a third device, providing a first coating material between the first device and the second device, the first coating material being uncured, providing a second coating material between the second device and the third device, the second coating material being uncured, and thereafter, curing the first and second coating materials in a same process.

摘要翻译： 提供了一种用于制造半导体器件的方法，其包括提供第一器件，第二器件和第三器件，在第一器件和第二器件之间提供第一涂层材料，第一涂层材料是未固化的，提供第二涂层 第二装置和第三装置之间的材料，第二涂料未固化，然后以相同的方法固化第一和第二涂料。

公开(公告)号：US20120119354A1

公开(公告)日：2012-05-17

申请号：US12944453

申请日：2010-11-11

申请人： Tsung-Fu Tsai ,  Yian-Liang Kuo ,  Ming-Song Sheu ,  Yu-Ling Tsai ,  Chen-Shien Chen ,  Han-Ping Pu

发明人： Tsung-Fu Tsai ,  Yian-Liang Kuo ,  Ming-Song Sheu ,  Yu-Ling Tsai ,  Chen-Shien Chen ,  Han-Ping Pu

IPC分类号： H01L23/498 ,  H01L21/50 ,  H01L23/48

CPC分类号： H01L21/78 ,  H01L21/02013 ,  H01L21/02016 ,  H01L21/563 ,  H01L23/295 ,  H01L23/562 ,  H01L24/32 ,  H01L24/743 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/26145 ,  H01L2224/27013 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81009 ,  H01L2224/81191 ,  H01L2224/83104 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2924/10156 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2924/10155 ,  H01L2924/00

摘要： A die has a first surface, a second surface opposite the first surface, and sidewalls includes a first portion and a second portion, wherein the first portion is closer to the first surface than the second portion. A fillet contacts the first portion of sidewalls of the die and encircles the die. A work piece is bonded to the die through solder bumps, with the second surface facing the work piece. A first underfill is filled a gap between the die and the work piece, wherein the first underfill contacts the fillet, and wherein the first underfill and the fillet are formed of different materials.

摘要翻译： 模具具有第一表面，与第一表面相对的第二表面，并且侧壁包括第一部分和第二部分，其中第一部分比第二部分更靠近第一表面。 圆角接触模具的侧壁的第一部分并且环绕模具。 工件通过焊料凸块与模具结合，第二表面面向工件。 第一底部填充物填充模具和工件之间的间隙，其中第一底部填充物接触圆角，并且其中第一底部填充物和圆角由不同的材料形成。

公开(公告)号：US08101499B2

公开(公告)日：2012-01-24

申请号：US12751512

申请日：2010-03-31

申请人： Hon-Lin Huang ,  Ching-Wen Hsiao ,  Kuo-Ching Hsu ,  Chen-Shien Chen

发明人： Hon-Lin Huang ,  Ching-Wen Hsiao ,  Kuo-Ching Hsu ,  Chen-Shien Chen

IPC分类号： H01L21/30

摘要： An integrated circuit structure includes a semiconductor wafer, which includes a first notch extending from an edge of the semiconductor wafer into the semiconductor wafer. A carrier wafer is mounted onto the semiconductor wafer. The carrier wafer has a second notch overlapping at least a portion of the first notch. A side of the carrier wafer facing the semiconductor wafer forms a sharp angle with an edge of the carrier wafer. The carrier wafer has a resistivity lower than about 1×108 Ohm-cm.

公开(公告)号：US08049323B2

公开(公告)日：2011-11-01

申请号：US11675984

申请日：2007-02-16

申请人： Chen-Shien Chen ,  Chao-Hsiang Yang ,  Jimmy Liang ,  Han-Liang Tseng ,  Mirng-Ji Lii ,  Tjandra Winata Karta ,  Hua-Shu Wu

发明人： Chen-Shien Chen ,  Chao-Hsiang Yang ,  Jimmy Liang ,  Han-Liang Tseng ,  Mirng-Ji Lii ,  Tjandra Winata Karta ,  Hua-Shu Wu

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L23/5389 ,  H01L23/49816 ,  H01L24/19 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/92244 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/19107

摘要： A chip holder formed of silicon, glass, other ceramics or other suitable materials includes a plurality of recesses for retaining semiconductor chips. The bond pads of the semiconductor chip are formed on or over an area of the chip holder that surrounds the semiconductor chip thus expanding the bonding area. The bond pads are coupled, using semiconductor wafer processing techniques, to internal bond pads formed directly on the semiconductor chip.

摘要翻译： 由硅，玻璃，其它陶瓷或其它合适材料形成的芯片保持架包括用于保持半导体芯片的多个凹槽。 半导体芯片的接合焊盘形成在芯片保持器的围绕半导体芯片的区域上或上方，从而扩大接合面积。 使用半导体晶片处理技术将接合焊盘连接到直接形成在半导体芯片上的内部接合焊盘。

公开(公告)号：US07871860B1

公开(公告)日：2011-01-18

申请号：US12620321

申请日：2009-11-17

申请人： Han-Ping Pu ,  Tsung-Shu Lin ,  Chen-Shien Chen

发明人： Han-Ping Pu ,  Tsung-Shu Lin ,  Chen-Shien Chen

IPC分类号： H01L21/00 ,  H01L21/50 ,  H01L21/48 ,  H01L21/44 ,  H01L21/46

CPC分类号： H01L24/81 ,  H01L21/563 ,  H01L24/16 ,  H01L2224/73203 ,  H01L2224/81211 ,  H01L2224/81801 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/351 ,  H01L2924/00

摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a chip and a substrate. The method also includes bonding the chip to the substrate. The method also includes, after the bonding the chip, dispensing a sealing material between the chip and the substrate. In accordance with the method, the chip and the substrate are maintained within a temperature range from the bonding the chip to the dispensing the sealing material, and wherein a lower limit of the temperature range is approximately twice a room temperature.

摘要翻译： 本公开提供了制造半导体器件的方法。 该方法包括提供芯片和基板。 该方法还包括将芯片接合到衬底。 该方法还包括在粘合芯片之后，在芯片和基板之间分配密封材料。 根据该方法，将芯片和基板保持在从接合芯片到分配密封材料的温度范围内，并且其中温度范围的下限约为室温的两倍。

公开(公告)号：US20100279463A1

公开(公告)日：2010-11-04

申请号：US12700929

申请日：2010-02-05

申请人： C. W. Hsiao ,  Bo-l Lee ,  Tsung-Ding Wang ,  Kai-Ming Ching ,  Chen-Shien Chen ,  Chien-Hsiun Lee ,  Clinton Chao

发明人： C. W. Hsiao ,  Bo-l Lee ,  Tsung-Ding Wang ,  Kai-Ming Ching ,  Chen-Shien Chen ,  Chien-Hsiun Lee ,  Clinton Chao

IPC分类号： H01L21/78 ,  H01L21/768 ,  H01L21/50 ,  H01L21/56

CPC分类号： H01L23/3114 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/00

摘要： A method of forming a stacked die structure is disclosed. A plurality of dies are respectively bonded to a plurality of semiconductor chips on a first surface of a wafer. An encapsulation structure is formed over the plurality of dies and the first surface of the wafer. The encapsulation structure covers a central portion of the first surface of the wafer and leaves an edge portion of the wafer exposed. A protective material is formed over the first surface of the edge portion of the wafer.

摘要翻译： 公开了一种形成堆叠的模具结构的方法。 多个管芯分别与晶片的第一表面上的多个半导体芯片接合。 在多个管芯和晶片的第一表面上形成封装结构。 封装结构覆盖晶片的第一表面的中心部分并且使晶片的边缘部分露出。 在晶片的边缘部分的第一表面上形成保护材料。