Methods and structure for carrier-less thin wafer handling
    15.
    发明授权
    Methods and structure for carrier-less thin wafer handling 有权
    无载体薄晶片处理的方法和结构

    公开(公告)号:US09064933B2

    公开(公告)日:2015-06-23

    申请号:US13724223

    申请日:2012-12-21

    Abstract: Methods of forming a microelectronic assembly and the resulting structures and devices are disclosed herein. In one embodiment, a method of forming a microelectronic assembly includes removing material exposed at portions of a surface of a substrate to form a processed substrate having a plurality of thinned portions separated by integral supporting portions of the processed substrate having a thickness greater than a thickness of the thinned portions, at least some of the thinned portions including a plurality of electrically conductive interconnects extending in a direction of the thicknesses of the thinned portions and exposed at the surface; and removing the supporting portions of the substrate to sever the substrate into a plurality of individual thinned portions, at least some individual thinned portions including the interconnects.

    Abstract translation: 本文公开了形成微电子组件的方法以及所得到的结构和装置。 在一个实施例中,形成微电子组件的方法包括去除在衬底的表面的部分处暴露的材料,以形成经处理的衬底,该衬底具有多个由处理衬底的整体支撑部分分隔开的薄化部分,该部分的厚度大于厚度 减薄部分中的至少一些薄化部分包括在薄壁部分的厚度方向上延伸并在表面露出的多个导电互连件; 以及去除衬底的支撑部分以将衬底切割成多个单独的薄化部分,至少一些单独的变薄部分,包括互连。

    METHODS AND STRUCTURE FOR CARRIER-LESS THIN WAFER HANDLING
    19.
    发明申请
    METHODS AND STRUCTURE FOR CARRIER-LESS THIN WAFER HANDLING 有权
    无载波干扰处理的方法和结构

    公开(公告)号:US20150255345A1

    公开(公告)日:2015-09-10

    申请号:US14722672

    申请日:2015-05-27

    Abstract: Methods of forming a microelectronic assembly and the resulting structures and devices are disclosed herein. In one embodiment, a method of forming a microelectronic assembly includes removing material exposed at portions of a surface of a substrate to form a processed substrate having a plurality of thinned portions separated by integral supporting portions of the processed substrate having a thickness greater than a thickness of the thinned portions, at least some of the thinned portions including a plurality of electrically conductive interconnects extending in a direction of the thicknesses of the thinned portions and exposed at the surface; and removing the supporting portions of the substrate to sever the substrate into a plurality of individual thinned portions, at least some individual thinned portions including the interconnects.

    Abstract translation: 本文公开了形成微电子组件的方法以及所得到的结构和装置。 在一个实施例中,形成微电子组件的方法包括去除在衬底的表面的部分处暴露的材料,以形成经处理的衬底,该衬底具有多个由处理衬底的整体支撑部分分离的薄化部分,该部分厚度大于厚度 减薄部分中的至少一些薄化部分包括在薄壁部分的厚度方向上延伸并在表面露出的多个导电互连件; 以及去除衬底的支撑部分以将衬底切割成多个单独的薄化部分,至少一些单独的变薄部分,包括互连。

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