公开(公告)号：US07566592B2

公开(公告)日：2009-07-28

申请号：US11552973

申请日：2006-10-26

Applicant: Shigeru Sato ,  Jiro Takeda ,  Atsushi Kayama ,  So Suzuki ,  Lionel Beneteau

Inventor： Shigeru Sato ,  Jiro Takeda ,  Atsushi Kayama ,  So Suzuki ,  Lionel Beneteau

IPC: H05K1/14 ,  H01L21/00 ,  H05K5/00 ,  H02B1/00

CPC classification number: H05K3/3426 ,  C23C18/31 ,  C23C18/32 ,  H01L23/49582 ,  H01L2924/0002 ,  H05K3/26 ,  H05K2201/10909 ,  Y02P70/613 ,  H01L2924/00

Abstract: The principles described herein relate to methods for soldering electrode terminals, pins or lead-frames of commercial electric components for high temperature reliability. In one embodiment, prior to soldering the electric components, a pre-plated solder layer is removed from the lead frame or pins, and nickel and/or gold films are formed with electroless plating. The removal of the pre-plated solder layer avoids excess pre-plated Sn with high-Pb solder that lowers the melting point to between 180° C. and 220° C. and weakens solder joints. The nickel layer formed with an electroless plating acts as a barrier to the interdiffusion of tin from solder with copper of the lead frame material, which may otherwise occur at high temperatures. Interdiffusion forms an intermetallic compound layer of copper and tin and degrades solder joint strength. The novel soldering processes improve high temperature reliability of solder joints and extend electronics life-time.

Abstract translation: 本文描述的原理涉及用于焊接商业电气部件的电极端子，引脚或引线框架以实现高温可靠性的方法。 在一个实施例中，在焊接电气部件之前，从引线框或引脚去除预镀焊料层，并且用无电镀形成镍和/或金膜。 去除预镀焊料层避免了具有高Pb焊料的过量预镀Sn，将熔点降低到180℃和220℃之间，并削弱焊点。 用无电电镀形成的镍层作为阻挡锡从焊料与铜框架材料的铜的相互扩散，否则可能会在高温下发生。 相互扩散形成铜和锡的金属间化合物层，并降低焊点强度。 新颖的焊接工艺提高了焊点的高温可靠性，延长了电子设备的使用寿命。

公开(公告)号：US07554432B2

公开(公告)日：2009-06-30

申请号：US11420280

申请日：2006-05-25

Applicant: Alfons Graf ,  Martin Maerz ,  Martin Saliternig

Inventor： Alfons Graf ,  Martin Maerz ,  Martin Saliternig

IPC: H01H85/04 ,  H01H85/12 ,  H01L23/495

CPC classification number: H01C7/126 ,  H01G2/16 ,  H01H37/761 ,  H01L2224/48247 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/13091 ,  H01L2924/181 ,  H05K1/0201 ,  H05K1/0293 ,  H05K3/3489 ,  H05K2201/09036 ,  H05K2201/09063 ,  H05K2201/10181 ,  H05K2201/10909 ,  H05K2201/2081 ,  H05K2203/0415 ,  H05K2203/175 ,  H05K2203/176 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A fuse is provided in a circuit, such that the fuse and an electric device in the circuit are thermally coupled to one another. The generation of the amount of heat by the electric device causes a fusible material in the fuse to melt. In this manner, the current terminal path of the electric device is interrupted.

Abstract translation: 在电路中设置保险丝，使得电路中的保险丝和电子装置彼此热耦合。 通过电子装置产生的热量导致保险丝中的易熔材料熔化。 以这种方式，电气设备的当前终端路径被中断。

公开(公告)号：US07490403B2

公开(公告)日：2009-02-17

申请号：US11633517

申请日：2006-12-05

Applicant: Kazuhiko Tanabe ,  Hiroaki Terada ,  Masahiro Sugiura ,  Tetsuharu Mizutani ,  Keiichiro Imamura ,  Takashi Tanaka

Inventor： Kazuhiko Tanabe ,  Hiroaki Terada ,  Masahiro Sugiura ,  Tetsuharu Mizutani ,  Keiichiro Imamura ,  Takashi Tanaka

IPC: H05K3/34 ,  B23K31/00

CPC classification number: H05K3/3415 ,  B23K1/085 ,  B23K1/20 ,  B23K3/0653 ,  B23K35/262 ,  B23K35/3613 ,  B23K35/3618 ,  H01L2924/0002 ,  H05K3/3447 ,  H05K3/3463 ,  H05K3/3468 ,  H05K3/3484 ,  H05K2201/10909 ,  H05K2203/044 ,  H05K2203/047 ,  H05K2203/1572 ,  Y02P70/613 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49149 ,  Y10T29/49155 ,  Y10T29/49165 ,  H01L2924/00

Abstract: In a soldering method for soldering an electronic component including a palladium or palladium alloy layer formed on a surface of the electronic component and also including a soldering lead terminal onto a printed wiring board including a soldering land and plated through hole, a solder layer containing tin and zinc as main components is formed on the surfaces of the land through hole by a HAL treatment. The lead terminal is inserted and mounted in the through hole. The printed wiring board is brought into contact with jet flows of a solder containing tin and zinc as the main components to thereby supply a solder to the land and through hole.

Abstract translation: 在包含形成在电子部件的表面上的钯或钯合金层的电子部件的焊接方法中，还包括焊接引线端子到包括焊接区域和电镀通孔的印刷线路板上，焊锡层含有锡 并且通过HAL处理在所述焊盘通孔的表面上形成作为主要部件的锌。 引线端子插入并安装在通孔中。 印刷电路板与含有锡和锌的焊料的喷射流作为主要成分接触，从而向焊盘和通孔提供焊料。

公开(公告)号：US20080246132A1

公开(公告)日：2008-10-09

申请号：US12078772

申请日：2008-04-04

Applicant: Yasumasa Kasuya ,  Motoharu Haga

Inventor： Yasumasa Kasuya ,  Motoharu Haga

IPC: H01L23/495 ,  H01L21/60

CPC classification number: H05K3/3442 ,  H01L23/3121 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L2224/29111 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/18301 ,  H05K2201/10727 ,  H05K2201/10909 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/00012

Abstract: This semiconductor device includes a semiconductor chip, and a lead arranged around the semiconductor chip to extend in a direction intersecting with the side surface of the semiconductor chip, and having at least an end farther from the semiconductor chip bonded to a package board, wherein a joint surface to the package board and an end surface orthogonal to the joint surface are formed on the end of the lead farther from the semiconductor chip, and a metal plating layer made of a pure metal is formed on the end surface.

Abstract translation: 该半导体装置包括：半导体芯片和配置在半导体芯片周围的引线，与半导体芯片的侧面交叉的方向延伸，并且至少具有与结合于封装基板的半导体芯片更远的端部， 在远离半导体芯片的引线的端部形成有与封装基板的接合面和与接合面正交的端面，并且在端面上形成由纯金属制成的金属镀层。

公开(公告)号：US20080180121A1

公开(公告)日：2008-07-31

申请号：US12060753

申请日：2008-04-01

Applicant: Igor Y. Khandros ,  A. Nicholas Sporck ,  Benjamin N. Eldrdge

Inventor： Igor Y. Khandros ,  A. Nicholas Sporck ,  Benjamin N. Eldrdge

IPC: G01R1/073

CPC classification number: H05K3/4015 ,  B23K1/0016 ,  B23K20/004 ,  B23K2101/40 ,  C25D5/08 ,  C25D5/22 ,  C25D21/02 ,  G01R1/06711 ,  G01R1/07342 ,  G01R1/07364 ,  G01R1/07378 ,  G01R31/2886 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/563 ,  H01L21/76897 ,  H01L22/20 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/49 ,  H01L24/72 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/16 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/45014 ,  H01L2224/45144 ,  H01L2224/49109 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2224/85201 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1532 ,  H01L2924/15787 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01R12/52 ,  H05K1/141 ,  H05K3/20 ,  H05K3/308 ,  H05K3/326 ,  H05K3/3421 ,  H05K3/3426 ,  H05K3/368 ,  H05K3/4092 ,  H05K7/1069 ,  H05K2201/0397 ,  H05K2201/068 ,  H05K2201/1031 ,  H05K2201/10318 ,  H05K2201/10378 ,  H05K2201/10719 ,  H05K2201/10734 ,  H05K2201/10757 ,  H05K2201/10878 ,  H05K2201/10909 ,  H05K2201/10946 ,  Y02P70/611 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2224/05599

Abstract: In a probe card assembly, a series of probe elements can be arrayed on a silicon space transformer. The silicon space transformer can be fabricated with an array of primary contacts in a very tight pitch, comparable to the pitch of a semiconductor device. One preferred primary contact is a resilient spring contact. Conductive elements in the space transformer are routed to second contacts at a more relaxed pitch. In one preferred embodiment, the second contacts are suitable for directly attaching a ribbon cable, which in turn can be connected to provide selective connection to each primary contact. The silicon space transformer is mounted in a fixture that provides for resilient connection to a wafer or device to be tested. This fixture can be adjusted to planarize the primary contacts with the plane of a support probe card board.

Abstract translation: 在探针卡组件中，可以将一系列探针元件排列在硅空间变压器上。 硅空间变压器可以以非常紧的间距以与半导体器件的间距相当的主要触点阵列制造。 一个优选的主要接触是弹性弹簧接触。 空间变压器中的导电元件以更放松的间距被路由到第二触点。 在一个优选实施例中，第二触头适于直接连接带状电缆，带状电缆又可连接以提供与每个主触点的选择性连接。 硅空间变压器安装在固定装置中，其提供与待测试的晶片或装置的弹性连接。 可以调整该夹具以使主触头与支撑探针卡板的平面平坦化。

公开(公告)号：US20080116546A1

公开(公告)日：2008-05-22

申请号：US11984762

申请日：2007-11-21

Applicant: Hyo-Jae Bang ,  Heui-Seog Kim ,  Seong-Chan Han ,  Jung-Hyeon Kim ,  Sung-Hwan Kim

Inventor： Hyo-Jae Bang ,  Heui-Seog Kim ,  Seong-Chan Han ,  Jung-Hyeon Kim ,  Sung-Hwan Kim

IPC: H01L23/495 ,  H01L21/60

CPC classification number: H01L23/3107 ,  H01L23/49541 ,  H01L23/49558 ,  H01L23/49586 ,  H01L24/48 ,  H01L25/105 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2225/1029 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/181 ,  H05K3/3426 ,  H05K2201/10689 ,  H05K2201/10909 ,  H05K2201/2081 ,  Y02P70/613 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A lead frame unit, a semiconductor package having a lead frame unit, a stacked semiconductor package having a semiconductor package, and methods of manufacturing the same are provided. The lead frame unit in a stacked semiconductor package may include a die pad supporting a semiconductor chip, an inner lead electrically connected to the semiconductor chip, an outer lead extending from the inner lead, and a heat-resistant insulation member surrounding the connection portion. The outer lead may include a connection portion connected to the inner lead and a junction portion connected to the connection portion and a circuit board. An external signal may be applied to the junction portion. If the lead frame unit is used in the stacked semiconductor package, the outer lead and a dummy outer lead in the stacked semiconductor package may have substantially the same shape.

Abstract translation: 提供引线框单元，具有引线框单元的半导体封装，具有半导体封装的堆叠半导体封装及其制造方法。 层叠半导体封装中的引线框架单元可以包括：支撑半导体芯片的管芯焊盘，与半导体芯片电连接的内部引线;从内部引线延伸的外部引线;以及围绕连接部分的耐热绝缘构件。 外引线可以包括连接到内引线的连接部分和连接到连接部分的接合部分和电路板。 外部信号可以施加到接合部分。 如果在叠层半导体封装中使用引线框架单元，则堆叠半导体封装中的外引线和虚外外引线可以具有基本相同的形状。

公开(公告)号：US07347702B2

公开(公告)日：2008-03-25

申请号：US11561297

申请日：2006-11-17

Applicant: Benjamin N. Eldridge ,  Thomas H. Dozier, II ,  Igor Y. Khandros ,  Gaetan L. Mathieu ,  William D. Smith

Inventor： Benjamin N. Eldridge ,  Thomas H. Dozier, II ,  Igor Y. Khandros ,  Gaetan L. Mathieu ,  William D. Smith

IPC: H01R12/00

CPC classification number: H05K3/4015 ,  B23K1/0016 ,  B23K20/004 ,  B23K2101/40 ,  C25D5/08 ,  C25D5/22 ,  C25D21/02 ,  G01R1/06711 ,  G01R1/06716 ,  G01R1/07342 ,  G01R1/07378 ,  G01R3/00 ,  G01R31/2884 ,  G01R31/2886 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/563 ,  H01L22/20 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/16 ,  H01L24/45 ,  H01L24/49 ,  H01L24/72 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/16 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/49109 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K1/141 ,  H05K3/20 ,  H05K3/308 ,  H05K3/326 ,  H05K3/3421 ,  H05K3/3426 ,  H05K3/368 ,  H05K2201/068 ,  H05K2201/1031 ,  H05K2201/10318 ,  H05K2201/10757 ,  H05K2201/10878 ,  H05K2201/10909 ,  H05K2201/10946 ,  Y02P70/611 ,  Y02P70/613 ,  Y10T29/49004 ,  Y10T29/49126 ,  Y10T29/49208 ,  Y10T29/49222 ,  H01L2924/00 ,  H01L2224/48

Abstract: An interconnection apparatus and a method of forming an interconnection apparatus. Contact structures are attached to or formed on a first substrate. The first substrate is attached to a second substrate, which is larger than the first substrate. Multiple such first substrates may be attached to the second substrate in order to create an array of contact structures. Each contact structure may be elongate and resilient and may comprise a core that is over coated with a material that imparts desired structural properties to the contact structure.

Abstract translation: 一种互连装置和形成互连装置的方法。 接触结构附着在第一基底上或形成在第一基底上。 第一衬底附接到比第一衬底大的第二衬底。 可以将多个这样的第一基板附接到第二基板，以便产生接触结构的阵列。 每个接触结构可以是细长的和弹性的，并且可以包括在涂覆有向接触结构赋予期望的结构特性的材料的芯上。

公开(公告)号：US20080041923A1

公开(公告)日：2008-02-21

申请号：US11622366

申请日：2007-01-11

Applicant: Kazuhiko KATO ,  Satoshi Yanagida ,  Osamu Sato ,  Mineo Kondo

Inventor： Kazuhiko KATO ,  Satoshi Yanagida ,  Osamu Sato ,  Mineo Kondo

IPC: B23K1/018

CPC classification number: B23K1/00 ,  H01R4/028 ,  H05K3/3447 ,  H05K2201/10909 ,  H05K2201/2081 ,  H05K2203/013

Abstract: The present invention provides an apparatus for forming a solder wicking prevention zone operating when a connector member with a connector is processed using molten solder, to hinder the solder from spreading to a contact site of the connector in a wettable manner. The apparatus includes a main forming agent tank which stores a main forming agent used to form the solder wicking prevention zone, an ejection nozzle which ejects the main forming agent stored in the main forming agent tank, and a direction control section which controls an ejection direction of the main forming agent ejected by the ejection nozzle. The direction control section controls the ejection direction of the main forming agent ejected by the ejection nozzle, so as to apply the main forming agent to a predetermined position on the connector member to form the solder wicking prevention zone.

Abstract translation: 本发明提供一种用于形成焊料芯吸防止区的装置，当使用熔融焊料处理具有连接器的连接器构件时，可以以可润湿的方式阻止焊料扩散到连接器的接触部位。 该装置包括主要形成剂罐，其存储用于形成防止焊料防止区的主要成形剂，喷射主要成型剂储存在主成形剂中的喷嘴和控制喷射方向的方向控制部分 由喷嘴喷射的主要成形剂。 方向控制部控制由喷嘴喷射的主成形剂的喷射方向，以将主成形剂施加到连接器构件上的预定位置，以形成防止焊料防止芯的区域。

公开(公告)号：US20080006937A1

公开(公告)日：2008-01-10

申请号：US11426157

申请日：2006-06-23

Applicant: Akira Matsunami

Inventor： Akira Matsunami

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/49548 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/48611 ,  H01L2224/48613 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48699 ,  H01L2224/48711 ,  H01L2224/48713 ,  H01L2224/48744 ,  H01L2224/48764 ,  H01L2224/48811 ,  H01L2224/48813 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/85411 ,  H01L2224/85413 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/351 ,  H05K3/3426 ,  H05K2201/10689 ,  H05K2201/10795 ,  H05K2201/10909 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A microelectronic device package that includes a microelectronic device encapsulated within a packaging material. The microelectronic device package also includes a lead attached to a portion of the microelectronic device extending through the packaging material. The lead has a break portion and a non-break portion on a tip of the lead.

Abstract translation: 一种微电子器件封装，其包括封装在封装材料内的微电子器件。 微电子器件封装还包括附接到延伸穿过包装材料的微电子器件的一部分的引线。 引线在引线的尖端上具有断裂部分和非断裂部分。

公开(公告)号：US07245006B2

公开(公告)日：2007-07-17

申请号：US11212828

申请日：2005-08-25

Applicant: Donald C. Abbott ,  Michael E. Mitchell ,  Paul R. Moehle ,  Douglas W. Romm

Inventor： Donald C. Abbott ,  Michael E. Mitchell ,  Paul R. Moehle ,  Douglas W. Romm

IPC: H01L23/495

CPC classification number: C23C30/00 ,  C25D5/14 ,  C25D5/34 ,  H01L21/4821 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/48664 ,  H01L2224/48699 ,  H01L2224/48764 ,  H01L2224/48864 ,  H01L2224/73265 ,  H01L2224/85464 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H05K3/3426 ,  H05K2201/10689 ,  H05K2201/10909 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A leadframe for use in the assembly of integrated circuit chips comprising a base metal structure having an adherent layer of nickel covering said base metal; an adherent film of palladium on said nickel layer; and an adherent layer of palladium on said palladium film, selectively covering areas of said leadframe suitable for bonding wire attachment and solder attachment.

Abstract translation: 一种用于组装集成电路芯片的引线框，其包括具有覆盖所述母材的镍的粘附层的基底金属结构; 在所述镍层上的钯的粘附膜; 和在所述钯膜上的钯的粘附层，选择性地覆盖所述引线框的适合于接合引线附着和焊料附着的区域。