Method and apparatus for adjusting wafer warpage
    22.
    发明授权
    Method and apparatus for adjusting wafer warpage 有权
    调整晶片翘曲的方法和装置

    公开(公告)号:US09576830B2

    公开(公告)日:2017-02-21

    申请号:US13475790

    申请日:2012-05-18

    CPC分类号: H01L21/67288 H01L21/6838

    摘要: A method for adjusting the warpage of a wafer, includes providing a wafer having a center portion and edge portions and providing a holding table having a holding area thereon for holding the wafer. The wafer is placed onto the holding table with the center portion higher than the edge portions and thereafter pressed onto the holding area such that the wafer is attracted to and held onto the holding table by self-suction force. The wafer is heated at a predetermined temperature and for a predetermined time in accordance with an amount of warpage of the wafer in order to achieve a substantially flat wafer or a predetermined wafer level.

    摘要翻译: 一种用于调整晶片翘曲的方法,包括提供具有中心部分和边缘部分的晶片,并提供其上具有用于保持晶片的保持区域的保持台。 将晶片放置在保持台上,其中心部分高​​于边缘部分,然后按压到保持区域上,使得晶片通过自吸力被吸引并保持在保持台上。 根据晶片的翘曲量将晶片在预定温度下加热预定时间,以便实现基本上平坦的晶片或预定的晶片级。

    Wafer-level underfill and over-molding
    28.
    发明授权
    Wafer-level underfill and over-molding 有权
    晶圆级底部填充和超模塑

    公开(公告)号:US08951037B2

    公开(公告)日:2015-02-10

    申请号:US13411293

    申请日:2012-03-02

    IPC分类号: B29C45/22

    摘要: A mold includes a top portion, and an edge ring having a ring-shape. The edge ring is underlying and connected to edges of the top portion. The edge ring includes air vents. The edge ring further encircles the inner space under the top portion of the mold. A plurality of injection ports is connected to the inner space of the mold. The plurality of injection ports is substantially aligned to a straight line crossing a center of the top portion of the mold. The plurality of injection ports has different sizes.

    摘要翻译: 模具包括顶部和具有环形的边缘环。 边缘环是底部并连接到顶部的边缘。 边缘环包括通风口。 边缘环进一步环绕模具顶部下方的内部空间。 多个注射口连接到模具的内部空间。 多个注射口基本上对齐于与模具顶部的中心交叉的直线。 多个注射口具有不同的尺寸。

    Warpage control in a package-on-package structure
    29.
    发明授权
    Warpage control in a package-on-package structure 有权
    包装封装结构中的翘曲控制

    公开(公告)号:US08846448B2

    公开(公告)日:2014-09-30

    申请号:US13571665

    申请日:2012-08-10

    IPC分类号: H01L21/00 H01L21/67

    摘要: The present disclosure relates to a tool arrangement and method to reduce warpage within a package-on-package semiconductor structure, while minimizing void formation within an electrically-insulating adhesive which couples the packages. A pressure generator and a variable frequency microwave source are coupled to a process chamber which encapsulates a package-on-package semiconductor structure. The package-on-package semiconductor structure is simultaneously heated by the variable frequency microwave source at variable frequency, variable temperature, and variable duration and exposed to an elevated pressure by the pressure generator. This combination for microwave heating and elevated pressure limits the amount of warpage introduced while preventing void formation within an electrically-insulating adhesive which couples the substrates of the package-on-package semiconductor structure.

    摘要翻译: 本公开涉及一种减少封装封装半导体结构内的翘曲的工具布置和方法,同时最小化耦合封装的电绝缘粘合剂内的空隙形成。 压力发生器和可变频率微波源耦合到封装封装的封装半导体结构的处理室。 封装的封装半导体结构由可变频率,可变温度和可变持续时间的可变频率微波源同时加热,并通过压力发生器暴露于高压。 这种用于微波加热和升高压力的组合限制了引入的翘曲量,同时防止在封装封装半导体结构的衬底的电绝缘粘合剂中形成空隙。