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1.
公开(公告)号:US20130341786A1
公开(公告)日:2013-12-26
申请号:US13532402
申请日:2012-06-25
申请人: Chun-Lei Hsu , Chung-Shi Liu , De-Yuan Lu , Ming-Che Ho , Yu-Feng Chen
发明人: Chun-Lei Hsu , Chung-Shi Liu , De-Yuan Lu , Ming-Che Ho , Yu-Feng Chen
IPC分类号: H01L23/498 , H01L21/56
CPC分类号: H01L25/50 , H01L21/4857 , H01L23/3121 , H01L23/49811 , H01L23/49822 , H01L24/16 , H01L24/81 , H01L25/105 , H01L2224/16225 , H01L2224/16238 , H01L2224/26175 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/81 , H01L2224/81193 , H01L2224/81411 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81464 , H01L2224/81815 , H01L2224/92125 , H01L2224/97 , H01L2225/0651 , H01L2225/06565 , H01L2225/1023 , H01L2225/1058 , H01L2225/1082 , H01L2924/00 , H01L2924/00012 , H01L2924/10253 , H01L2924/12042 , H01L2924/1431 , H01L2924/1434 , H01L2924/15311 , H01L2924/15321 , H01L2924/15323 , H01L2924/15331 , H01L2924/15333 , H01L2924/157 , H01L2924/15788 , H01L2924/18161 , H01L2924/3651
摘要: Package on package (PoP) devices and methods of packaging semiconductor dies are disclosed. In one embodiment, a PoP device includes a first packaged die and a second packaged die coupled to the first packaged die. Metal pillars are coupled to the first packaged die. The metal pillars have a first portion proximate the first packaged die and a second portion disposed over the first portion. Each of the metal pillars is coupled to a solder joint proximate the second packaged die.
摘要翻译: 封装封装(PoP)器件和封装半导体管芯的方法被公开。 在一个实施例中,PoP器件包括第一封装管芯和耦合到第一封装管芯的第二封装管芯。 金属柱连接到第一封装的模具。 金属柱具有靠近第一封装管芯的第一部分和设置在第一部分上的第二部分。 每个金属支柱都联接到靠近第二包装模具的焊接接头。
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2.
公开(公告)号:US08981559B2
公开(公告)日:2015-03-17
申请号:US13532402
申请日:2012-06-25
申请人: Chun-Lei Hsu , Chung-Shi Liu , De-Yuan Lu , Ming-Che Ho , Yu-Feng Chen
发明人: Chun-Lei Hsu , Chung-Shi Liu , De-Yuan Lu , Ming-Che Ho , Yu-Feng Chen
CPC分类号: H01L25/50 , H01L21/4857 , H01L23/3121 , H01L23/49811 , H01L23/49822 , H01L24/16 , H01L24/81 , H01L25/105 , H01L2224/16225 , H01L2224/16238 , H01L2224/26175 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/81 , H01L2224/81193 , H01L2224/81411 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81464 , H01L2224/81815 , H01L2224/92125 , H01L2224/97 , H01L2225/0651 , H01L2225/06565 , H01L2225/1023 , H01L2225/1058 , H01L2225/1082 , H01L2924/00 , H01L2924/00012 , H01L2924/10253 , H01L2924/12042 , H01L2924/1431 , H01L2924/1434 , H01L2924/15311 , H01L2924/15321 , H01L2924/15323 , H01L2924/15331 , H01L2924/15333 , H01L2924/157 , H01L2924/15788 , H01L2924/18161 , H01L2924/3651
摘要: Package on package (PoP) devices and methods of packaging semiconductor dies are disclosed. In one embodiment, a PoP device includes a first packaged die and a second packaged die coupled to the first packaged die. Metal pillars are coupled to the first packaged die. The metal pillars have a first portion proximate the first packaged die and a second portion disposed over the first portion. Each of the metal pillars is coupled to a solder joint proximate the second packaged die.
摘要翻译: 封装封装(PoP)器件和封装半导体管芯的方法被公开。 在一个实施例中,PoP器件包括第一封装管芯和耦合到第一封装管芯的第二封装管芯。 金属柱连接到第一封装的模具。 金属支柱具有靠近第一封装模具的第一部分和设置在第一部分上的第二部分。 每个金属支柱都联接到靠近第二包装模具的焊接接头。
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公开(公告)号:US08993431B2
公开(公告)日:2015-03-31
申请号:US12778610
申请日:2010-05-12
申请人: Chun-Lei Hsu , Ming-Che Ho , Ming-Da Cheng , Chung-Shi Liu
发明人: Chun-Lei Hsu , Ming-Che Ho , Ming-Da Cheng , Chung-Shi Liu
CPC分类号: H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03424 , H01L2224/03464 , H01L2224/0347 , H01L2224/0401 , H01L2224/05559 , H01L2224/05571 , H01L2224/05572 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1148 , H01L2224/1161 , H01L2224/11616 , H01L2224/11831 , H01L2224/13005 , H01L2224/13022 , H01L2224/1308 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169 , H01L2924/00013 , H01L2924/0002 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/00014 , H01L2924/01014 , H01L2924/206 , H01L2224/13099 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/05552
摘要: A method for fabricating bump structure forms an under-bump metallurgy (UBM) layer in an opening of an encapsulating layer, and then forms a bump layer on the UBM layer within the opening of the encapsulating layer. After removing excess material of the bump layer from the upper surface of the encapsulating layer, the encapsulating layer is removed till a top portion of the bump layer protrudes from the upper surface of the encapsulating layer.
摘要翻译: 一种用于制造凸块结构的方法在封装层的开口中形成凸起下金属(UBM)层,然后在封装层的开口内的UBM层上形成凸点层。 在从封装层的上表面除去突起层的多余材料之后,去除封装层直到凸起层的顶部从封装层的上表面突出。
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公开(公告)号:US20130127059A1
公开(公告)日:2013-05-23
申请号:US13299100
申请日:2011-11-17
申请人: Chih-Wei Lai , Ming-Che Ho , Tzong-Hann Yang , Chien Rhone Wang , Chia-Tung Chang , Hung-Jui Kuo , Chung-Shi Liu
发明人: Chih-Wei Lai , Ming-Che Ho , Tzong-Hann Yang , Chien Rhone Wang , Chia-Tung Chang , Hung-Jui Kuo , Chung-Shi Liu
CPC分类号: G06F17/5077 , G06F17/5072 , H01L23/488 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/034 , H01L2224/03912 , H01L2224/0401 , H01L2224/05016 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05552 , H01L2224/05572 , H01L2224/05666 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11849 , H01L2224/13006 , H01L2224/13012 , H01L2224/13014 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/1403 , H01L2224/14132 , H01L2924/00014 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029
摘要: A device includes a plurality of connectors on a top surface of a package component. The plurality of connectors includes a first connector having a first lateral dimension, and a second connector having a second lateral dimension. The second lateral dimension is greater than the first lateral dimension. The first and the second lateral dimensions are measured in directions parallel to a major surface of the package component.
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公开(公告)号:US20120286423A1
公开(公告)日:2012-11-15
申请号:US13556016
申请日:2012-07-23
申请人: Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
发明人: Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
IPC分类号: H01L23/498
CPC分类号: H01L24/11 , H01L21/4853 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/93 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/0346 , H01L2224/0347 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11416 , H01L2224/11422 , H01L2224/11424 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/118 , H01L2224/1181 , H01L2224/1182 , H01L2224/11822 , H01L2224/11827 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/13005 , H01L2224/13111 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/132 , H01L2224/13211 , H01L2224/13339 , H01L2224/13562 , H01L2224/13584 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/1379 , H01L2224/13794 , H01L2224/13809 , H01L2224/13813 , H01L2224/13817 , H01L2224/13818 , H01L2224/1382 , H01L2224/13849 , H01L2224/13855 , H01L2224/13857 , H01L2224/1386 , H01L2224/13866 , H01L2224/16145 , H01L2224/16225 , H01L2224/81193 , H01L2224/81815 , H01L2224/93 , H01L2225/06513 , H01L2924/01012 , H01L2924/01013 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/04941 , H01L2924/04953 , H01L2924/00014 , H01L2924/01039 , H01L2224/11 , H01L2924/00
摘要: A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.
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6.
公开(公告)号:US09099396B2
公开(公告)日:2015-08-04
申请号:US13291508
申请日:2011-11-08
申请人: Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu
发明人: Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu
IPC分类号: H01L23/485 , H01L23/29 , H01L23/31 , H01L23/525 , H01L23/00
CPC分类号: H01L23/291 , H01L23/293 , H01L23/3171 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/02313 , H01L2224/02331 , H01L2224/02381 , H01L2224/0239 , H01L2224/03424 , H01L2224/03452 , H01L2224/0346 , H01L2224/03462 , H01L2224/03464 , H01L2224/0391 , H01L2224/0401 , H01L2224/05008 , H01L2224/05111 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05548 , H01L2224/05562 , H01L2224/05567 , H01L2224/05573 , H01L2224/05583 , H01L2224/05611 , H01L2224/05644 , H01L2224/05647 , H01L2224/08503 , H01L2224/11334 , H01L2224/1146 , H01L2224/11849 , H01L2224/13022 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16237 , H01L2224/16503 , H01L2924/00014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/014 , H01L2924/12042 , H01L2924/2064 , H01L2924/00 , H01L2224/05552
摘要: A semiconductor device includes a conductive layer formed on the surface of a post-passivation interconnect (PPI) structure by an immersion tin process. A polymer layer is formed on the conductive layer and patterned with an opening to expose a portion of the conductive layer. A solder bump is then formed in the opening of the polymer layer to electrically connect to the PPI structure.
摘要翻译: 半导体器件包括通过浸锡工艺在钝化后互连(PPI)结构的表面上形成的导电层。 聚合物层形成在导电层上并用开口图案化以暴露导电层的一部分。 然后在聚合物层的开口中形成焊料凸块以电连接到PPI结构。
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公开(公告)号:US08865586B2
公开(公告)日:2014-10-21
申请号:US13344446
申请日:2012-01-05
申请人: Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu
发明人: Yi-Wen Wu , Zheng-Yi Lim , Ming-Che Ho , Chung-Shi Liu
IPC分类号: H01L21/44 , H01L21/4763 , H01L23/48 , H01L23/52 , H01L23/495 , H01L23/485 , H01L21/768
CPC分类号: H01L23/485 , H01L21/768 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/02166 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05027 , H01L2224/05155 , H01L2224/05164 , H01L2224/05541 , H01L2224/05548 , H01L2224/05552 , H01L2224/05571 , H01L2224/05572 , H01L2224/05583 , H01L2224/05644 , H01L2224/13017 , H01L2224/13022 , H01L2224/13023 , H01L2224/13027 , H01L2224/131 , H01L2924/00014 , H01L2924/00012 , H01L2924/207 , H01L2924/014
摘要: A method includes forming a polymer layer over a metal pad, forming an opening in the polymer layer to expose a portion of the metal pad, and forming an under-bump-metallurgy (UBM). The UBM includes a portion extending into the opening to electrically couple to the metal pad.
摘要翻译: 一种方法包括在金属垫上形成聚合物层,在聚合物层中形成开口以暴露金属垫的一部分,并形成凸点下冶金(UBM)。 UBM包括延伸到开口中以电耦合到金属垫的部分。
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8.
公开(公告)号:US08405199B2
公开(公告)日:2013-03-26
申请号:US12832231
申请日:2010-07-08
申请人: Wen-Hsiung Lu , Ming-Da Cheng , Chih-Wei Lin , Ming-Che Ho , Chung-Shi Liu
发明人: Wen-Hsiung Lu , Ming-Da Cheng , Chih-Wei Lin , Ming-Che Ho , Chung-Shi Liu
IPC分类号: H01L23/48
CPC分类号: H01L24/13 , H01L21/563 , H01L23/3192 , H01L24/05 , H01L24/11 , H01L24/16 , H01L25/0657 , H01L25/50 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05073 , H01L2224/05166 , H01L2224/05572 , H01L2224/05573 , H01L2224/05647 , H01L2224/1132 , H01L2224/11424 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/13076 , H01L2224/1308 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13582 , H01L2224/136 , H01L2224/13647 , H01L2224/16145 , H01L2224/16225 , H01L2224/73204 , H01L2224/97 , H01L2225/06513 , H01L2924/00013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/10335 , H01L2924/14 , H01L2924/3512 , H01L2224/13655 , H01L2224/81 , H01L2224/13099 , H01L2924/00 , H01L2224/05552
摘要: An embodiment of the disclosure includes a conductive pillar on a semiconductor die. A substrate is provided. A bond pad is over the substrate. A conductive pillar is over the bond pad. The conductive pillar has a top surface, edge sidewalls and a height. A cap layer is over the top surface of the conductive pillar. The cap layer extends along the edge sidewalls of the conductive pillar for a length. A solder material is over a top surface of the cap layer.
摘要翻译: 本公开的实施例包括半导体管芯上的导电柱。 提供基板。 焊盘在衬底上。 导电支柱位于接合垫上方。 导电柱具有顶表面,边缘侧壁和高度。 覆盖层在导电柱的顶表面之上。 盖层沿着导电柱的边缘侧壁延伸一段长度。 焊料材料在盖层的顶表面之上。
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公开(公告)号:US09117772B2
公开(公告)日:2015-08-25
申请号:US13527422
申请日:2012-06-19
申请人: Zheng-Yi Lim , Yi-Wen Wu , Tzong-Hann Yang , Ming-Che Ho , Chung-Shi Liu
发明人: Zheng-Yi Lim , Yi-Wen Wu , Tzong-Hann Yang , Ming-Che Ho , Chung-Shi Liu
IPC分类号: H01L21/44 , H01L23/31 , H01L25/10 , H01L25/00 , H01L25/065 , H01L21/56 , H01L23/498 , H01L23/00
CPC分类号: H01L24/81 , H01L21/56 , H01L23/3107 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49833 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/17 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/13016 , H01L2224/13017 , H01L2224/13018 , H01L2224/13023 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13582 , H01L2224/13583 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/16148 , H01L2224/16225 , H01L2224/16238 , H01L2224/16501 , H01L2224/16505 , H01L2224/32135 , H01L2224/32141 , H01L2224/32145 , H01L2224/81085 , H01L2224/811 , H01L2224/8112 , H01L2224/81121 , H01L2224/81193 , H01L2224/81232 , H01L2224/81355 , H01L2224/81359 , H01L2224/81801 , H01L2224/8192 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/1023 , H01L2225/1058 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/15311 , H01L2924/1533 , H01L2924/15331 , H01L2924/181 , H01L2924/1815 , H01L2924/18161 , H01L2924/3841 , H01L2924/00014 , H01L2924/00012 , H01L2924/01005 , H01L2924/01074 , H01L2924/01015 , H01L2924/06 , H01L2924/00
摘要: A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.
摘要翻译: 一种方法包括将第一包装部件的第一电连接器与第二包装部件的第二电连接器对准。 利用第一电连接器与第二电连接器对准,金属层被电镀在第一和第二电连接器上。 金属层将第一电连接器连接到第二电连接器。
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公开(公告)号:US08937388B2
公开(公告)日:2015-01-20
申请号:US13492285
申请日:2012-06-08
申请人: Yi-Wen Wu , Ming-Che Ho , Wen-Hsiung Lu , Chia-Wei Tu , Chung-Shi Liu
发明人: Yi-Wen Wu , Ming-Che Ho , Wen-Hsiung Lu , Chia-Wei Tu , Chung-Shi Liu
IPC分类号: H01L23/52
CPC分类号: H01L24/06 , H01L23/3114 , H01L23/3192 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/02331 , H01L2224/02351 , H01L2224/02375 , H01L2224/02381 , H01L2224/03828 , H01L2224/0401 , H01L2224/05548 , H01L2224/05551 , H01L2224/05557 , H01L2224/05572 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/06051 , H01L2224/10145 , H01L2224/11334 , H01L2224/13021 , H01L2224/13024 , H01L2224/13027 , H01L2224/131 , H01L2224/13111 , H01L2924/00014 , H01L2924/01322 , H01L2924/01023 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2924/014 , H01L2224/05552 , H01L2924/00
摘要: Methods and apparatuses for wafer level packaging (WLP) of semiconductor devices are disclosed. A contact pad of a circuit may be connected to a solder bump by way of a post passivation interconnect (PPI) line and a PPI pad. The PPI pad may comprise a hollow part and an opening. The PPI pad may be formed together with the PPI line as one piece. The hollow part of the PPI pad can function to control the amount of solder flux used in the ball mounting process so that any extra amount of solder flux can escape from an opening of the solid part of the PPI pad. A solder ball can be mounted to the PPI pad directly without using any under bump metal (UBM) as a normal WLP package would need.
摘要翻译: 公开了用于半导体器件的晶片级封装(WLP)的方法和装置。 电路的接触焊盘可以通过后钝化互连(PPI)线和PPI焊盘连接到焊料凸块。 PPI垫可以包括中空部分和开口。 PPI垫可以与PPI线一起形成为一体。 PPI垫的中空部分可用于控制球安装过程中使用的焊剂量,以便任何额外量的焊剂可以从PPI焊盘的固体部分的开口逸出。 焊锡球可以直接安装到PPI焊盘,而不使用正常的WLP封装所需的任何下凸块金属(UBM)。
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