公开(公告)号：US20170236794A1

公开(公告)日：2017-08-17

申请号：US15584961

申请日：2017-05-02

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Rajesh Katkar ,  Hong Shen

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/34

CPC classification number: H01L24/09 ,  B81B7/008 ,  B81B2207/07 ,  B81C1/0023 ,  H01L21/565 ,  H01L21/76877 ,  H01L23/3107 ,  H01L23/3157 ,  H01L23/34 ,  H01L23/367 ,  H01L23/481 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/06 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/89 ,  H01L24/96 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/10 ,  H01L25/105 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/08225 ,  H01L2224/09181 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/33517 ,  H01L2224/48135 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/80001 ,  H01L2224/81005 ,  H01L2224/92124 ,  H01L2224/92133 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06548 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/1511 ,  H01L2924/15153 ,  H01L2924/15192 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/32225 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/85399

Abstract: In a multi-chip module (MCM), a “super” chip (110N) is attached to multiple “plain” chips (110F′ “super” and “plain” chips can be any chips). The super chip is positioned above the wiring board (WB) but below at least some of plain chips (110F). The plain chips overlap the super chip. Further, the plain chips' low speed IOs can be connected to the WB by long direct connections such as bond wires (e.g. BVAs) or solder stacks; such connections can be placed side by side with the super chip. Such connections can be long, so the super chip is not required to be thin. Also, if through-substrate vias (TSVs) are omitted, the manufacturing yield is high and the manufacturing cost is low. Other structures are provided that combine the short and long direct connections to obtain desired physical and electrical properties.

公开(公告)号：US09691702B2

公开(公告)日：2017-06-27

申请号：US15200554

申请日：2016-07-01

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Charles G. Woychik ,  Arkalgud R. Sitaram ,  Hong Shen ,  Zhuowen Sun ,  Liang Wang ,  Guilian Gao

IPC: H01L23/04 ,  H01L23/52 ,  H01L21/44 ,  H01L23/522 ,  H01L49/02 ,  H01L21/768 ,  H01L21/8234

CPC classification number: H01L23/5223 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/5226 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a microelectronic component having conductive vias (114) passing through a substrate (104) and protruding above the substrate, conductive features (120E.A, 120E.B) are provided above the substrate that wrap around the conductive vias' protrusions (114′) to form capacitors, electromagnetic shields, and possibly other elements. Other features and embodiments are also provided.

公开(公告)号：US20170040270A1

公开(公告)日：2017-02-09

申请号：US14819744

申请日：2015-08-06

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Guilian Gao ,  Bongsub Lee ,  Scott McGrath ,  Hong Shen ,  Charles G. Woychik ,  Arkalgud R. Sitaram ,  Akash Agrawal

IPC: H01L23/00 ,  H01L23/48 ,  H01L21/311

CPC classification number: H01L24/03 ,  H01L21/31144 ,  H01L21/486 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53257 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02126 ,  H01L2224/03009 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/10126 ,  H01L2224/13016 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/014

Abstract: A method of processing an interconnection element can include providing a substrate element having front and rear opposite surfaces and electrically conductive structure, a first dielectric layer overlying the front surface and a plurality of conductive contacts at a first surface of the first dielectric layer, and a second dielectric layer overlying the rear surface and having a conductive element at a second surface of the second dielectric layer. The method can also include removing a portion of the second dielectric layer so as to reduce the thickness of the portion, and to provide a raised portion of the second dielectric layer having a first thickness and a lowered portion having a second thickness. The first thickness can be greater than the second thickness. At least a portion of the conductive element can be recessed below a height of the first thickness of the second dielectric layer.

Abstract translation: 处理互连元件的方法可以包括提供具有前后相对表面和导电结构的衬底元件，覆盖前表面的第一电介质层和在第一介电层的第一表面处的多个导电触点，以及 第二电介质层覆盖在后表面上并且在第二介电层的第二表面处具有导电元件。 该方法还可以包括去除第二电介质层的一部分以减小该部分的厚度，并且提供具有第一厚度的第二介电层的凸起部分和具有第二厚度的下降部分。 第一厚度可以大于第二厚度。 导电元件的至少一部分可以凹陷到第二介电层的第一厚度的高度以下。

公开(公告)号：US20170018529A1

公开(公告)日：2017-01-19

申请号：US15208985

申请日：2016-07-13

Applicant: Invensas Corporation

Inventor： Rajesh Katkar ,  Reynaldo Co ,  Scott McGrath ,  Ashok S. Prabhu ,  Sangil Lee ,  Liang Wang ,  Hong Shen

IPC: H01L25/065 ,  H01L25/00

CPC classification number: H01L25/0652 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/02335 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/83005 ,  H01L2224/9222 ,  H01L2225/06506 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2225/06596 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/1032 ,  H01L2924/10329 ,  H01L2924/1037 ,  H01L2924/1436 ,  H01L2924/1438 ,  H01L2924/18162 ,  H01L2924/19107 ,  H01L2224/19

Abstract: A microelectronic assembly includes a stack of semiconductor chips each having a front surface defining a respective plane of a plurality of planes. A chip terminal may extend from a contact at a front surface of each chip in a direction towards the edge surface of the respective chip. The chip stack is mounted to substrate at an angle such that edge surfaces of the chips face a major surface of the substrate that defines a second plane that is transverse to, i.e., not parallel to the plurality of parallel planes. An electrically conductive material electrically connects the chip terminals with corresponding substrate contacts.

Abstract translation: 微电子组件包括堆叠的半导体芯片，每个半导体芯片具有限定多个平面的相应平面的前表面。 芯片端子可以沿着朝向相应芯片的边缘表​​面的方向从每个芯片的前表面处的触点延伸。 芯片堆叠以一定角度安装到基板，使得芯片的边缘表​​面面向基板的主表面，该主表面限定横向于即不平行于多个平行平面的第二平面。 导电材料将芯片端子与相应的衬底触点电连接。

公开(公告)号：US20160315047A1

公开(公告)日：2016-10-27

申请号：US15200554

申请日：2016-07-01

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Charles G. Woychik ,  Arkalgud R. Sitaram ,  Hong Shen ,  Zhuowen Sun ,  Liang Wang ,  Guilian Gao

IPC: H01L23/522 ,  H01L21/768 ,  H01L49/02

CPC classification number: H01L23/5223 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/5226 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a microelectronic component having conductive vias (114) passing through a substrate (104) and protruding above the substrate, conductive features (120E.A, 120E.B) are provided above the substrate that wrap around the conductive vias' protrusions (114′) to form capacitors, electromagnetic shields, and possibly other elements. Other features and embodiments are also provided.

Abstract translation: 在具有穿过衬底（104）并且突出在衬底上方的导电通路（114）的微电子部件中，导电特征（120E.A，120E.B）设置在衬底上方，该衬底环绕导电通孔突起（114'） ）以形成电容器，电磁屏蔽以及可能的其他元件。 还提供了其它特征和实施例。

公开(公告)号：US09437536B1

公开(公告)日：2016-09-06

申请号：US14885466

申请日：2015-10-16

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Rajesh Katkar ,  Hong Shen ,  Cyprian Emeka Uzoh ,  Belgacem Haba

IPC: H01L23/495 ,  H01L23/498 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L23/498 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/04 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/3675 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/16 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/16113 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81192 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1058 ,  H01L2924/1427 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19102 ,  H01L2224/81

Abstract: A method of making an assembly can include forming a circuit structure defining front and rear surfaces, and forming a substrate onto the rear surface. The forming of the circuit structure can include forming a first dielectric layer coupled to the carrier. The first dielectric layer can include front contacts configured for joining with contacts of one or more microelectronic elements, and first traces. The forming of the circuit structure can include forming rear conductive elements at the rear surface coupled with the front contacts through the first traces. The forming of the substrate can include forming a dielectric element directly on the rear surface. The dielectric element can have first conductive elements facing the rear conductive elements and joined thereto. The dielectric element can include second traces coupled with the first conductive elements. The forming of the substrate can include forming terminals at a surface of the substrate.

Abstract translation: 制造组件的方法可以包括形成限定前表面和后表面的电路结构，以及在后表面上形成衬底。 电路结构的形成可以包括形成耦合到载体的第一介电层。 第一电介质层可以包括构造成与一个或多个微电子元件的触点和第一迹线接合的前触点。 电路结构的形成可以包括通过第一迹线在与前触点耦合的后表面处形成后导电元件。 基板的形成可以包括直接在后表面上形成电介质元件。 电介质元件可以具有面向后导电元件并与其连接的第一导电元件。 电介质元件可以包括与第一导电元件耦合的第二迹线。 基板的形成可以包括在基板的表面上形成端子。

公开(公告)号：US09397038B1

公开(公告)日：2016-07-19

申请号：US14633746

申请日：2015-02-27

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Charles G. Woychik ,  Arkalgud R. Sitaram ,  Hong Shen ,  Zhuowen Sun ,  Liang Wang ,  Guilian Gao

IPC: H01L21/44 ,  H01L23/04 ,  H01L23/52 ,  H01L23/522 ,  H01L49/02 ,  H01L21/768

CPC classification number: H01L23/5223 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/5226 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a microelectronic component having conductive vias (114) passing through a substrate (104) and protruding above the substrate, conductive features (120E.A, 120E.B) are provided above the substrate that wrap around the conductive vias' protrusions (114′) to form capacitors, electromagnetic shields, and possibly other elements. Other features and embodiments are also provided.

Abstract translation: 在具有穿过衬底（104）并且突出在衬底上方的导电通路（114）的微电子部件中，导电特征（120E.A，120E.B）设置在衬底上方，该衬底环绕导电通孔突起（114'） ）以形成电容器，电磁屏蔽以及可能的其他元件。 还提供了其它特征和实施例。

公开(公告)号：US20150318344A1

公开(公告)日：2015-11-05

申请号：US14268899

申请日：2014-05-02

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Hong Shen ,  Rajesh Katkar

IPC: H01L49/02 ,  H01L23/00

CPC classification number: H01L28/60 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/5223 ,  H01L24/05 ,  H01L24/32 ,  H01L24/83 ,  H01L25/105 ,  H01L25/11 ,  H01L25/115 ,  H01L25/165 ,  H01L25/50 ,  H01L28/40 ,  H01L28/65 ,  H01L2224/05009 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/1205 ,  H01L2924/15311 ,  H01L2924/16153 ,  H01L2924/00

Abstract: A method for making an integrated circuit package includes providing a handle wafer having a first region defining a cavity. A capacitor is formed in the first region. The capacitor has a pair of electrodes, each coupled to one of a pair of conductive pads, at least one of which is disposed on a lower surface of the handle wafer. An interposer having an upper surface with a conductive pad and at least one semiconductor die disposed thereon is also provided. The die has an integrated circuit that is electroconductively coupled to a redistribution layer (RDL) of the interposer. The lower surface of the handle wafer is bonded to the upper surface of the interposer such that the die is disposed below or within the cavity and the electroconductive pad of the handle wafer is bonded to the electroconductive pad of the interposer in a metal-to-metal bond.

Abstract translation: 制造集成电路封装的方法包括提供具有限定空腔的第一区域的处理晶片。 在第一区域形成电容器。 电容器具有一对电极，每对电极耦合到一对导电焊盘中的一个，其至少一个设置在处理晶片的下表面上。 还提供了具有上表面的插入件，其具有导电焊盘和设置在其上的至少一个半导体管芯。 芯片具有与内插器的再分配层（RDL）电导耦合的集成电路。 把手晶片的下表面被结合到插入件的上表面，使得模具设置在空腔的下方或内部，并且处理晶片的导电焊盘以金属间隔结合到插入件的导电焊盘上， 金属键。

公开(公告)号：US09117827B1

公开(公告)日：2015-08-25

申请号：US14268899

申请日：2014-05-02

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Hong Shen ,  Rajesh Katkar

IPC: H01L21/00 ,  H01L21/56

Abstract: A method for making an integrated circuit package includes providing a handle wafer having a first region defining a cavity. A capacitor is formed in the first region. The capacitor has a pair of electrodes, each coupled to one of a pair of conductive pads, at least one of which is disposed on a lower surface of the handle wafer. An interposer having an upper surface with a conductive pad and at least one semiconductor die disposed thereon is also provided. The die has an integrated circuit that is electroconductively coupled to a redistribution layer (RDL) of the interposer. The lower surface of the handle wafer is bonded to the upper surface of the interposer such that the die is disposed below or within the cavity and the electroconductive pad of the handle wafer is bonded to the electroconductive pad of the interposer in a metal-to-metal bond.

公开(公告)号：US20220139846A1

公开(公告)日：2022-05-05

申请号：US17509887

申请日：2021-10-25

Applicant: Invensas Corporation

Inventor： Patrick Variot ,  Hong Shen

IPC: H01L23/552 ,  H01L23/31 ,  H01L23/522

Abstract: A microelectronic device may include a substrate, a first chip on the substrate, and a second chip on the substrate. A plurality of pillars may be located between the first chip and the second chip, wherein a first end of each pillar of the plurality of pillars is adjacent to the substrate. A spacing among the plurality of pillars is at least equal to a distance sufficient to block electromagnetic interference (EMI) and/or radio frequency interference (RFI) between the first chip and the second chip. The microelectronic device may also include a cover over at least the first chip, the second chip, and the plurality of pillars, wherein a second end of each pillar of the plurality of pillars is at least adjacent to a trench defined within the cover. The trench may include a conductive material therein.