公开(公告)号：US08693163B2

公开(公告)日：2014-04-08

申请号：US12873931

申请日：2010-09-01

申请人： An-Jhih Su ,  Chi-Chun Hsieh ,  Tzu-Yu Wang ,  Wei-Cheng Wu ,  Hsien-Pin Hu ,  Shang-Yun Hou ,  Wen-Chih Chiou ,  Shin-Puu Jeng

发明人： An-Jhih Su ,  Chi-Chun Hsieh ,  Tzu-Yu Wang ,  Wei-Cheng Wu ,  Hsien-Pin Hu ,  Shang-Yun Hou ,  Wen-Chih Chiou ,  Shin-Puu Jeng

IPC分类号： H01L29/92 ,  H01L21/768

CPC分类号： H01L28/40 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L28/92 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/05552 ,  H01L2924/00

摘要： A device includes a substrate having a front surface and a back surface opposite the front surface. A capacitor is formed in the substrate and includes a first capacitor plate; a first insulation layer encircling the first capacitor plate; and a second capacitor plate encircling the first insulation layer. Each of the first capacitor plate, the first insulation layer, and the second capacitor plate extends from the front surface to the back surface of the substrate.

摘要翻译： 一种装置包括具有与前表面相对的前表面和后表面的基底。 电容器形成在衬底中，并包括第一电容器板; 围绕所述第一电容器板的第一绝缘层; 以及环绕所述第一绝缘层的第二电容器板。 第一电容器板，第一绝缘层和第二电容器板中的每一个从基板的前表面延伸到后表面。

公开(公告)号：US08847388B2

公开(公告)日：2014-09-30

申请号：US13267200

申请日：2011-10-06

申请人： Chen-Hua Yu ,  Hung-Pin Chang ,  An-Jhih Su ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou ,  Shin-Puu Jeng

发明人： Chen-Hua Yu ,  Hung-Pin Chang ,  An-Jhih Su ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou ,  Shin-Puu Jeng

IPC分类号： H01L23/48 ,  H01L23/31 ,  H01L23/00 ,  H01L23/29

CPC分类号： H01L23/293 ,  H01L23/3192 ,  H01L24/01 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/10126 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/15788 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/04941 ,  H01L2924/01047 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device includes a bump structure formed on a post-passivation interconnect (PPI) line and surrounded by a protection structure. The protection structure includes a polymer layer and at least one dielectric layer. The dielectric layer may be formed on the top surface of the polymer layer, underlying the polymer layer, inserted between the bump structure and the polymer layer, inserted between the PPI line and the polymer layer, covering the exterior sidewalls of the polymer layer, or combinations thereof.

摘要翻译： 半导体器件包括形成在钝化后互连（PPI）线上并由保护结构包围的凸块结构。 保护结构包括聚合物层和至少一个电介质层。 电介质层可以形成在聚合物层的顶表面上，该聚合物层的下面，插入凸起结构和聚合物层之间，插入在PPI线和聚合物层之间，覆盖聚合物层的外侧壁，或 其组合。

公开(公告)号：US08581418B2

公开(公告)日：2013-11-12

申请号：US12840949

申请日：2010-07-21

申请人： Weng-Jin Wu ,  Ying-Ching Shih ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Weng-Jin Wu ,  Ying-Ching Shih ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： H01L23/48

CPC分类号： H01L21/768 ,  H01L21/56 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/481 ,  H01L23/5384 ,  H01L24/11 ,  H01L24/14 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L2224/0401 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13184 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2224/81895 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/81805

摘要： A device includes a first die having a first side and a second side opposite to first side, the first side includes a first region and a second region, and a first metal bump of a first horizontal size formed on the first region of the first side of the first die. A second die is bonded to the first side of the first die through the first metal bump. A dielectric layer is formed over the first side of the first die and includes a first portion directly over the second die, a second portion encircling the second die, and an opening exposing the second region of the first side of the first die. A second metal bump of a second horizontal size is formed on the second region of the first side of the first die and extending into the opening of the dielectric layer. The second horizontal size is greater than the first horizontal size. An electrical component is bonded to the first side of the first die through the second metal bump.

摘要翻译： 一种器件包括具有第一侧和与第一侧相对的第二侧的第一管芯，第一侧包括第一区域和第二区域，以及形成在第一侧面的第一区域上的第一水平尺寸的第一金属凸块 的第一个死亡。 通过第一金属凸块将第二模具结合到第一模具的第一侧。 介电层形成在第一管芯的第一侧上，并且包括直接在第二管芯上方的第一部分，环绕第二管芯的第二部分和暴露第一管芯的第一侧的第二区域的开口。 第二水平尺寸的第二金属凸块形成在第一模具的第一侧的第二区域上并且延伸到电介质层的开口中。 第二个水平尺寸大于第一个水平尺寸。 电子部件通过第二金属凸块接合到第一管芯的第一侧。

公开(公告)号：US20120018876A1

公开(公告)日：2012-01-26

申请号：US12840949

申请日：2010-07-21

申请人： Weng-Jin Wu ,  Ying-Ching Shih ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Weng-Jin Wu ,  Ying-Ching Shih ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： H01L23/485 ,  H01L21/768

CPC分类号： H01L21/768 ,  H01L21/56 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/481 ,  H01L23/5384 ,  H01L24/11 ,  H01L24/14 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L2224/0401 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13184 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2224/81895 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/81805

摘要： A device includes a first die having a first side and a second side opposite to first side, the first side includes a first region and a second region, and a first metal bump of a first horizontal size formed on the first region of the first side of the first die. A second die is bonded to the first side of the first die through the first metal bump. A dielectric layer is formed over the first side of the first die and includes a first portion directly over the second die, a second portion encircling the second die, and an opening exposing the second region of the first side of the first die. A second metal bump of a second horizontal size is formed on the second region of the first side of the first die and extending into the opening of the dielectric layer. The second horizontal size is greater than the first horizontal size. An electrical component is bonded to the first side of the first die through the second metal bump.

摘要翻译： 一种器件包括具有第一侧和与第一侧相对的第二侧的第一管芯，第一侧包括第一区域和第二区域，以及形成在第一侧面的第一区域上的第一水平尺寸的第一金属凸块 的第一个死亡。 通过第一金属凸块将第二模具结合到第一模具的第一侧。 介电层形成在第一管芯的第一侧上，并且包括直接在第二管芯上方的第一部分，环绕第二管芯的第二部分和暴露第一管芯的第一侧的第二区域的开口。 第二水平尺寸的第二金属凸块形成在第一模具的第一侧的第二区域上并且延伸到电介质层的开口中。 第二个水平尺寸大于第一个水平尺寸。 电子部件通过第二金属凸块接合到第一管芯的第一侧。

公开(公告)号：US20110277655A1

公开(公告)日：2011-11-17

申请号：US12778867

申请日：2010-05-12

申请人： Francis Ko ,  Chi-Chun Hsieh ,  Shang-Yun Hou ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Francis Ko ,  Chi-Chun Hsieh ,  Shang-Yun Hou ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： B41F33/00

CPC分类号： H01L23/5384 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49883 ,  H01L23/525 ,  H01L23/5328 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/13009 ,  H01L2224/13147 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/14181 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method of forming a device includes printing conductive patterns on a dielectric sheet to form a pre-ink-printed sheet, and bonding the pre-ink-printed sheet onto a side of a substrate. The conductive feature includes a through-substrate via extending from a first major side of the substrate to a second major side of the substrate opposite the first major side. A conductive paste is then applied to electrically couple conductive patterns to a conductive feature in the substrate.

摘要翻译： 形成器件的方法包括在电介质片上印刷导电图案以形成预先印墨的片材，以及将预印墨片材粘合到基片的一侧上。 导电特征包括从衬底的第一主侧延伸到与第一主侧相对的衬底的第二主侧的贯通衬底。 然后施加导电膏以将导电图案电耦合到衬底中的导电特征。

公开(公告)号：US09960088B2

公开(公告)日：2018-05-01

申请号：US13290879

申请日：2011-11-07

申请人： Yi-Chao Mao ,  Jui-Pin Hung ,  Jing-Cheng Lin ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Yi-Chao Mao ,  Jui-Pin Hung ,  Jing-Cheng Lin ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： B24B49/10 ,  H01L21/66 ,  B24B37/013 ,  B24B7/22 ,  H01L23/31

CPC分类号： H01L22/26 ,  B24B7/228 ,  B24B37/013 ,  B24B49/10 ,  H01L22/12 ,  H01L23/3114 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for performing grinding includes selecting a target wheel loading for wafer grinding processes, and performing a grinding process on a wafer. With the proceeding of the grinding process, wheel loadings of the grinding process are measured. The grinding process is stopped after the target wheel loading is reached. The method alternatively includes selecting a target reflectivity of wafer grinding processes, and performing a grinding process on a wafer. With a proceeding of the grinding process, reflectivities of a light reflected from a surface of the wafer are measured. The grinding process is stopped after one of the reflectivities reaches the target reflectivity.

公开(公告)号：US20130087951A1

公开(公告)日：2013-04-11

申请号：US13270957

申请日：2011-10-11

申请人： Jing-Cheng Lin ,  Hsien-Wen Liu ,  Jui-Pin Hung ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Jing-Cheng Lin ,  Hsien-Wen Liu ,  Jui-Pin Hung ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： H05B6/64 ,  B29C35/08

CPC分类号： B29C35/0805 ,  B29C2035/0855 ,  H01L21/565 ,  H05B6/6491 ,  H05B6/806

摘要： An embodiment is a molding chamber. The molding chamber comprises a mold-conforming chase, a substrate-base chase, a first radiation permissive component, and a microwave generator coupled to a first waveguide. The mold-conforming chase is over the substrate-base chase, and the mold-conforming chase is moveable in relation to the substrate-base chase. The first radiation permissive component is in one of the mold-conforming chase or the substrate-base chase. The microwave generator and the first waveguide are together operable to direct microwave radiation through the first radiation permissive component.

公开(公告)号：US20130075892A1

公开(公告)日：2013-03-28

申请号：US13246553

申请日：2011-09-27

申请人： Jing-Cheng Lin ,  Weng-Jin Wu ,  Ying-Ching Shih ,  Jui-Pin Hung ,  Szu Wei Lu ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Jing-Cheng Lin ,  Weng-Jin Wu ,  Ying-Ching Shih ,  Jui-Pin Hung ,  Szu Wei Lu ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L23/48 ,  H01L21/6835 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0652 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/83

摘要： A method for fabricating three dimensional integrated circuits comprises providing a wafer stack wherein a plurality of semiconductor dies are mounted on a first semiconductor die, forming a molding compound layer on the first side of the first semiconductor die, wherein the plurality of semiconductor dies are embedded in the molding compound layer. The method further comprises grinding a second side of the first semiconductor die until a plurality of through vias become exposed, attaching the wafer stack to a tape frame and dicing the wafer stack to separate the wafer stack into a plurality of individual packages.

摘要翻译： 一种用于制造三维集成电路的方法包括：提供其中多个半导体管芯安装在第一半导体管芯上的晶片堆叠，在第一半导体管芯的第一侧上形成模塑料层，其中多个半导体管芯被嵌入 在模塑料层中。 该方法还包括研磨第一半导体管芯的第二面直到多个通孔露出，将晶片堆叠附着到带框架上并切割晶片堆叠以将晶片堆叠分离成多个单独的封装。

公开(公告)号：US20130001776A1

公开(公告)日：2013-01-03

申请号：US13170973

申请日：2011-06-28

申请人： Chen-Hua Yu ,  Jing-Cheng Lin ,  Nai-Wei Liu ,  Jui-Pin Hung ,  Shin-Puu Jeng

发明人： Chen-Hua Yu ,  Jing-Cheng Lin ,  Nai-Wei Liu ,  Jui-Pin Hung ,  Shin-Puu Jeng

IPC分类号： H01L23/485 ,  H01L21/28

CPC分类号： H01L21/4853 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2224/19 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/214

摘要： A package includes a device die having a substrate. A molding compound contacts a sidewall of the substrate. A metal pad is over the substrate. A passivation layer has a portion covering an edge portion of the metal pad. A metal pillar is over and contacting the metal pad. A dielectric layer is over the passivation layer. A package material formed of a molding compound or a polymer is over the dielectric layer. The dielectric layer includes a bottom portion between the passivation layer and the package material, and a sidewall portion between a sidewall of the metal pillar and a sidewall of the package material. A polymer layer is over the package material, the molding compound, and the metal pillar. A post-passivation interconnect (PPI) extends into the polymer layer. A solder ball is over the PPI, and is electrically coupled to the metal pad through the PPI.

摘要翻译： 封装包括具有基板的器件裸片。 模塑料与基材的侧壁接触。 金属焊盘在基板上。 钝化层具有覆盖金属焊盘的边缘部分的部分。 金属支柱已经过去并与金属垫接触。 介电层位于钝化层的上方。 由模塑料或聚合物形成的包装材料在电介质层的上面。 电介质层包括位于钝化层和封装材料之间的底部，以及在金属柱的侧壁和封装材料的侧壁之间的侧壁部分。 聚合物层在包装材料，模塑料和金属支柱之上。 后钝化互连（PPI）延伸到聚合物层中。 焊球在PPI上方，并通过PPI电耦合到金属焊盘。

公开(公告)号：US20120306073A1

公开(公告)日：2012-12-06

申请号：US13343582

申请日：2012-01-04

申请人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Cheng-Chieh Hsieh ,  Kuo-Ching Hsu ,  Ying-Ching Shih ,  Po-Hoa Tsai ,  Chin-Fu Kao ,  Cheng-Lin Huang ,  Jing-Cheng Lin

发明人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Shang-Yun Hou ,  Cheng-Chieh Hsieh ,  Kuo-Ching Hsu ,  Ying-Ching Shih ,  Po-Hoa Tsai ,  Chin-Fu Kao ,  Cheng-Lin Huang ,  Jing-Cheng Lin

IPC分类号： H01L23/485 ,  H01L21/768

CPC分类号： H01L24/11 ,  H01L23/147 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/04 ,  H01L25/50 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05184 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/10145 ,  H01L2224/10156 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/11831 ,  H01L2224/13017 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/13578 ,  H01L2224/13686 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/3651 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2924/049 ,  H01L2924/053 ,  H01L2924/00

摘要： A device includes a top dielectric layer having a top surface. A metal pillar has a portion over the top surface of the top dielectric layer. A non-wetting layer is formed on a sidewall of the metal pillar, wherein the non-wetting layer is not wettable to the molten solder. A solder region is disposed over and electrically coupled to the metal pillar.

摘要翻译： 一种器件包括具有顶表面的顶部电介质层。 金属柱在顶部介电层的顶表面上具有一部分。 在金属柱的侧壁上形成非润湿层，其中非润湿层不能熔化到熔融焊料上。 焊接区域设置在金属柱上并电耦合到金属柱。