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125 条记录 (耗时 0.04 秒)

    Connection component and method of making same
    44.
    发明授权
    Connection component and method of making same 有权
    连接组件及其制作方法

    公开(公告)号：US06306752B1

    公开(公告)日：2001-10-23

    申请号：US09396048

    申请日：1999-09-15

    申请人： Thomas H. DiStefano ,  Joseph Fjeslstad ,  John W. Smith

    发明人： Thomas H. DiStefano ,  Joseph Fjeslstad ,  John W. Smith

    IPC分类号： H01L214763

    CPC分类号： H01L23/49827 ,  H01L21/486 ,  H01L23/3114 ,  H01L2224/50

    摘要： A method of making a connection component for a microelectronic element includes providing a sheet comprising an electrically conductive layer, a photoresist layer overlying the conductive layer and a photoimageable dielectric layer disposed under the conductive layer. The method includes lithographically forming at least one opening in the photoresist layer to uncover a portion of the conductive layer, forming a plurality of circuit features from the conductive layer by removing the uncovered portion of the conductive layer, at least some of the circuit features being leads, and lithographically forming at least one aperture in the photoimageable dielectric layer.

    摘要翻译： 制造微电子元件的连接部件的方法包括提供包括导电层的片材，覆盖在导电层上的光致抗蚀剂层和设置在导电层下面的可光成像的电介质层。 该方法包括在光致抗蚀剂层中光刻形成至少一个开口以露出导电层的一部分，通过去除导电层的未覆盖部分从导电层形成多个电路特征，至少一些电路特征为 引线，并在光致成像介质层中光刻形成至少一个孔。

    Method of making chip mountings and assemblies
    46.
    发明授权
    Method of making chip mountings and assemblies 失效
    制造芯片安装和组件的方法

    公开(公告)号：US5994222A

    公开(公告)日：1999-11-30

    申请号：US845786

    申请日：1997-04-25

    申请人： John W. Smith ,  Thomas H. DiStefano

    发明人： John W. Smith ,  Thomas H. DiStefano

    IPC分类号： H01L23/31 ,  H01L21/00

    CPC分类号： H01L23/3107 ,  H01L24/97 ,  H01L2224/50 ,  H01L2224/97 ,  H01L2924/01082 ,  H01L2924/12042

    摘要： A bonding component for electrically connecting a semiconductor chip or wafer to a support substrate includes a dielectric layer having a central region, elongated slots defining the central region, and a peripheral region surrounding the slots. Metallic bonding pads are arranged on the central region, and leads extend from the bonding pads to the edge of the central region and extending partially across the elongated slots. The leads are detached from the peripheral region of the dielectric layer on the side of the slots opposite the central region. The leads are adapted to be deformed during bonding to a semiconductor chip or wafer. To form the bonding component, a dielectric layer is first provided having a central region, slots and a peripheral region. A metallic structure is also provided having bonding pads on the central region, and leads electrically connected to the bonding pads and to a plating bus disposed in the peripheral region. A resist is applied to the metallic structure in zones separating the leads, the metallic structure is plated in regions outside the zones with an etch resistant metal, the resist is removed and the leads are etched so as to form gaps in the metallic structure over the elongated slots.

    摘要翻译： 用于将半导体芯片或晶片电连接到支撑衬底的接合部件包括具有中心区域的介电层，限定中心区域的细长槽和围绕槽的周边区域。 金属接合焊盘布置在中心区域上，并且引线从焊盘延伸到中心区域的边缘并且部分延伸穿过细长槽。 引线与介质层的与中心区域相对的一侧的外围区域分离。 引线适于在与半导体芯片或晶片接合期间变形。 为了形成接合部件，首先提供具有中心区域，槽和周边区域的电介质层。 还提供了一种金属结构，在中心区域具有接合焊盘，并且引线电连接到接合焊盘和设置在周边区域中的电镀母线。 在分离引线的区域中将金属结构施加抗蚀剂，金属结构用耐蚀刻金属镀在区域外的区域中，去除抗蚀剂并蚀刻引线以在金属结构上形成间隙 细长的槽。