公开(公告)号：US11742316B2

公开(公告)日：2023-08-29

申请号：US17897086

申请日：2022-08-26

申请人： GUANGDONG UNIVERSITY OF TECHNOLOGY

发明人： Yu Zhang ,  Chengqiang Cui ,  Peilin Liang ,  Jin Tong ,  Guannan Yang

IPC分类号： H01L23/00

CPC分类号： H01L24/81 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/11015 ,  H01L2224/1181 ,  H01L2224/16227 ,  H01L2224/81007 ,  H01L2224/81055 ,  H01L2224/8184 ,  H01L2224/81203 ,  H01L2224/81207 ,  H01L2224/81224 ,  H01L2224/81911 ,  H01L2924/381 ,  H01L2924/3841

摘要： This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.

公开(公告)号：US20230256546A1

公开(公告)日：2023-08-17

申请号：US18162466

申请日：2023-01-31

申请人： DISCO CORPORATION

发明人： Teppei NOMURA ,  Yuki IKKU ,  Zhiwen CHEN

IPC分类号： B23K26/57 ,  B23K26/046 ,  H01L23/00

CPC分类号： B23K26/57 ,  B23K26/046 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/75263 ,  H01L2224/81224

摘要： A laser reflow method includes a preparation step of preparing a workpiece including a board and semiconductor chips that each have bumps formed on one surface thereof and are placed on the board with the bumps interposed therebetween and a laser beam irradiation step of irradiating the semiconductor chips with a laser beam from a side of another surface opposite to the one surface, thereby reflowing bumps formed within an irradiated area of the workpiece. In the laser beam irradiation step, the irradiation with the laser beam is carried out while an irradiation range of the laser beam is changed in stages from a region including an outer peripheral portion of the irradiated area toward a region including a central portion of the irradiated area.

公开(公告)号：US11695100B2

公开(公告)日：2023-07-04

申请号：US17151862

申请日：2021-01-19

申请人： GLO AB

发明人： Zhen Chen

IPC分类号： H01L33/58 ,  H01L25/16 ,  H01L23/00 ,  H01L33/60 ,  H01L33/32 ,  H01L33/62 ,  H01L33/42 ,  H01L33/12 ,  H01L33/00

CPC分类号： H01L33/58 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/81 ,  H01L25/167 ,  H01L33/60 ,  H01L24/13 ,  H01L24/16 ,  H01L33/0093 ,  H01L33/12 ,  H01L33/32 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/0347 ,  H01L2224/03849 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05181 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05669 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16148 ,  H01L2224/8181 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2924/12041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0083

摘要： A light emitting diode (LED) includes a n-doped semiconductor material layer, a p-doped semiconductor material layer, an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, and a photonic crystal grating configured to increase the light extraction efficiency of the LED.

公开(公告)号：US20190103376A1

公开(公告)日：2019-04-04

申请号：US15937984

申请日：2018-03-28

申请人： Samsung Electronics Co., Ltd.

发明人： Man-Hee Han ,  Dae-Sang Chan ,  Sung-il Cho ,  Jung-Lae Jung

IPC分类号： H01L23/00 ,  B23K1/00 ,  B23K1/005 ,  B23K3/08

CPC分类号： H01L24/75 ,  B23K1/0016 ,  B23K1/0056 ,  B23K3/087 ,  B23K2101/40 ,  H01L24/16 ,  H01L24/81 ,  H01L24/95 ,  H01L2224/16225 ,  H01L2224/7501 ,  H01L2224/751 ,  H01L2224/75261 ,  H01L2224/75263 ,  H01L2224/75302 ,  H01L2224/75312 ,  H01L2224/75314 ,  H01L2224/75754 ,  H01L2224/7598 ,  H01L2224/81001 ,  H01L2224/81011 ,  H01L2224/81022 ,  H01L2224/81024 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2224/13099

摘要： A jig for bonding a semiconductor chip may include a pressurizing portion and at least one opening. The pressuring portion may be configured to pressurize an upper surface of the semiconductor chip bonded to a package substrate via a bump and a flux using a laser. The opening may be surrounded by the pressurizing portion. The laser irradiated to the bump and the flux may be transmitted through the opening. A vapor generated from the flux by the laser may be discharged through the opening. Thus, the contamination of the jig caused by the vapor may be prevented so that a transmissivity of the laser through the jig may be maintained.

公开(公告)号：US20180308712A1

公开(公告)日：2018-10-25

申请号：US16017735

申请日：2018-06-25

申请人： Amkor Technology, Inc.

发明人： Dong Jin Kim ,  Jin Han Kim ,  Won Chul Do Do ,  Jae Hun Bae Bae ,  Won Myoung Ki ,  Dong Hoon Han ,  Do Hyung Kim ,  Ji Hun Lee ,  Jun Hwan Park ,  Seung Nam Son ,  Hyun Cho ,  Curtis Zwenger

IPC分类号： H01L21/48 ,  H01L21/683 ,  H01L23/538 ,  H01L23/00 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L21/4857 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L2221/68304 ,  H01L2221/68318 ,  H01L2221/68331 ,  H01L2221/68345 ,  H01L2221/68363 ,  H01L2224/1132 ,  H01L2224/131 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81192 ,  H01L2224/81203 ,  H01L2224/81224 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81464 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/81911 ,  H01L2224/81913 ,  H01L2224/81914 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83104 ,  H01L2224/83192 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/1421 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00012

摘要： A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

公开(公告)号：US20180261579A1

公开(公告)日：2018-09-13

申请号：US15978091

申请日：2018-05-12

申请人： Rohinni, LLC

发明人： Andrew Huska ,  Cody Peterson ,  Clinton Adams ,  Sean Kupcow

IPC分类号： H01L25/075 ,  H01L21/677 ,  H01L21/48 ,  H01L21/687 ,  H01L33/62 ,  H01L23/00 ,  H01L21/67 ,  H01L21/66 ,  H01L23/544 ,  H01L21/683 ,  H01L21/68

CPC分类号： H01L25/0753 ,  G02F1/133603 ,  G02F1/133605 ,  G02F1/133606 ,  G02F2001/133612 ,  H01L21/4853 ,  H01L21/67132 ,  H01L21/67144 ,  H01L21/67196 ,  H01L21/67265 ,  H01L21/67715 ,  H01L21/67778 ,  H01L21/681 ,  H01L21/6836 ,  H01L21/68742 ,  H01L22/12 ,  H01L22/20 ,  H01L23/53242 ,  H01L23/544 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/89 ,  H01L33/62 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2223/54413 ,  H01L2223/54426 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/16238 ,  H01L2224/75252 ,  H01L2224/75261 ,  H01L2224/75262 ,  H01L2224/75303 ,  H01L2224/7531 ,  H01L2224/75314 ,  H01L2224/75651 ,  H01L2224/75753 ,  H01L2224/75824 ,  H01L2224/75842 ,  H01L2224/75843 ,  H01L2224/81191 ,  H01L2224/81205 ,  H01L2224/81224 ,  H01L2224/83224 ,  H01L2924/12041 ,  H01L2924/405 ,  H01L2933/0066 ,  H01L2924/00014

摘要： A system to effectuate improved transfer of semiconductor die. A first frame secures a first substrate having the semiconductor die. A second frame secures a second substrate adjacent the first substrate. A needle is disposed adjacent to the first frame. The needle includes: a longitudinal surface extending in a direction toward the second frame, and a base end having a cross-sectional dimension being based, at least in part, on a cross-sectional dimension of the semiconductor die. A needle actuator is operably connected to the needle and is configured to actuate the needle such that, during the transfer operation, when the first substrate is secured in the first frame and the second substrate is secured in the second frame, the needle presses the semiconductor die into contact with the second substrate so as to transfer the semiconductor die onto the second substrate.

公开(公告)号：US20180233495A1

公开(公告)日：2018-08-16

申请号：US15951094

申请日：2018-04-11

申请人： Rohinni, LLC

发明人： Cody Peterson ,  Andrew Huska

IPC分类号： H01L25/075 ,  H01L21/68 ,  H01L21/66 ,  H01L23/00 ,  H01L21/683 ,  H01L21/67 ,  H01L33/62 ,  H01L23/544 ,  H01L21/687 ,  H01L21/677 ,  H01L21/48

CPC分类号： H01L25/0753 ,  G02F1/133603 ,  G02F1/133605 ,  G02F1/133606 ,  G02F2001/133612 ,  H01L21/4853 ,  H01L21/67132 ,  H01L21/67144 ,  H01L21/67196 ,  H01L21/67265 ,  H01L21/67715 ,  H01L21/67778 ,  H01L21/681 ,  H01L21/6836 ,  H01L21/68742 ,  H01L22/12 ,  H01L22/20 ,  H01L23/53242 ,  H01L23/544 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/89 ,  H01L33/62 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2223/54413 ,  H01L2223/54426 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/16238 ,  H01L2224/75252 ,  H01L2224/75261 ,  H01L2224/75262 ,  H01L2224/75303 ,  H01L2224/7531 ,  H01L2224/75314 ,  H01L2224/75317 ,  H01L2224/75651 ,  H01L2224/75753 ,  H01L2224/75824 ,  H01L2224/75842 ,  H01L2224/75843 ,  H01L2224/81191 ,  H01L2224/81205 ,  H01L2224/81224 ,  H01L2224/83224 ,  H01L2924/12041 ,  H01L2924/405 ,  H01L2933/0066 ,  H01L2924/00014

摘要： An apparatus includes a substrate and a circuit trace having a predetermined pattern disposed on the substrate. A plurality of LEDs are connected to the substrate via the circuit trace. The predetermined pattern is arranged as an array of lines along a surface of the substrate, and the plurality of LEDs are distributed along the lines of the array.

公开(公告)号：US20170282247A1

公开(公告)日：2017-10-05

申请号：US15475807

申请日：2017-03-31

申请人： Board of Regents, The University of Texas System

发明人： Michael A. Cullinan ,  Anil Yuksel ,  Nilabh Kumar Roy

IPC分类号： B22F3/105 ,  B33Y50/02 ,  G06F17/50 ,  B33Y10/00

CPC分类号： B22F7/02 ,  B22F1/0044 ,  B22F3/1055 ,  B22F2003/1056 ,  B22F2003/1057 ,  B22F2003/1059 ,  B22F2999/00 ,  B23K1/0008 ,  B23K2101/36 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  B33Y70/00 ,  B33Y80/00 ,  G06F17/5018 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/563 ,  H01L21/565 ,  H01L21/67115 ,  H01L21/67144 ,  H01L21/6838 ,  H01L23/3135 ,  H01L23/4985 ,  H01L23/544 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2223/54426 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/75261 ,  H01L2224/75901 ,  H01L2224/81007 ,  H01L2224/81054 ,  H01L2224/81132 ,  H01L2224/81192 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/81908 ,  H01L2224/83007 ,  H01L2224/83054 ,  H01L2224/83132 ,  H01L2224/83224 ,  H01L2224/83908 ,  H01L2224/83939 ,  H01L2224/9211 ,  Y02P10/295 ,  B22F1/0018 ,  B22F1/0022

摘要： Exemplified microscale selective laser sintering (μ-SLS or micro-SLS) systems and methods facilitate modeling of the nanoparticle powder bed by simulating the interactions between particles during the powder spreading operation. In particular, the exemplified methods and system use multiscale modeling techniques to accurately predict the formation and mechanical/electrical properties of parts produced by selective laser sintering of powder beds. Discrete element modeling is used for nanoscale particle interactions by implementing the different forces dominant at nanoscale. A heat transfer analysis is used to predict the sintering of individual particles in the powder beds in order to build up a complete structural model of the parts that are being produced by the SLS process.

公开(公告)号：US20170141071A1

公开(公告)日：2017-05-18

申请号：US14958341

申请日：2015-12-03

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Kwang-Seong CHOI ,  Hyun-cheol BAE ,  Yong Sung EOM ,  Jin Ho LEE ,  Haksun LEE

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L25/00 ,  H01L21/48

CPC分类号： H01L24/81 ,  H01L21/4853 ,  H01L21/563 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/16237 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2224/81002 ,  H01L2224/81091 ,  H01L2224/81143 ,  H01L2224/81208 ,  H01L2224/81224 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2224/81911 ,  H01L2224/83224 ,  H01L2224/83862 ,  H01L2224/9211 ,  H01L2224/95 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01083 ,  H01L2924/0105 ,  H01L2924/01049 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/01047 ,  H01L2924/01029

摘要： Provided is a method of fabricating a semiconductor package. The method includes providing a package substrate including a pad, mounting a semiconductor chip with a solder ball on the package substrate to allow the solder ball to be disposed on the pad, filling a space between the package substrate and the semiconductor chip with a underfill resin including a reducing agent comprising a carboxyl group, and irradiating the semiconductor chip with a laser to bond the solder ball to the pad, wherein the bonding of the solder ball to the pad comprises changing a metal oxide layer formed on surfaces of the pad and the solder ball to a metal layer by heat generated by the laser.

公开(公告)号：US20170140967A1

公开(公告)日：2017-05-18

申请号：US15418605

申请日：2017-01-27

申请人： Rohinni, LLC

发明人： Andrew Huska ,  Cody Peterson ,  Clinton Adams ,  Sean Kupcow

IPC分类号： H01L21/68 ,  H01L23/532 ,  H01L21/677 ,  H01L21/683 ,  H01L21/67

CPC分类号： H01L25/0753 ,  G02F1/133603 ,  G02F1/133605 ,  G02F1/133606 ,  G02F2001/133612 ,  H01L21/4853 ,  H01L21/67132 ,  H01L21/67144 ,  H01L21/67196 ,  H01L21/67265 ,  H01L21/67715 ,  H01L21/67778 ,  H01L21/681 ,  H01L21/6836 ,  H01L21/68742 ,  H01L22/12 ,  H01L22/20 ,  H01L23/53242 ,  H01L23/544 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/89 ,  H01L33/62 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2223/54413 ,  H01L2223/54426 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/16238 ,  H01L2224/75252 ,  H01L2224/75261 ,  H01L2224/75262 ,  H01L2224/75303 ,  H01L2224/7531 ,  H01L2224/75314 ,  H01L2224/75317 ,  H01L2224/75651 ,  H01L2224/75753 ,  H01L2224/75824 ,  H01L2224/75842 ,  H01L2224/75843 ,  H01L2224/81191 ,  H01L2224/81205 ,  H01L2224/81224 ,  H01L2224/83224 ,  H01L2924/12041 ,  H01L2924/405 ,  H01L2933/0066 ,  H01L2924/00014

摘要： An apparatus includes a first frame to hold a wafer tape, and a second frame to hold a substrate adjacent to the first side of the wafer tape. A needle is disposed adjacent to the second side of the wafer tape and extends in a direction toward the wafer tape. A needle actuator is connected to the needle to move the needle, during a direct transfer process, to a die transfer position at which the needle contacts the second side of the wafer tape to press the first semiconductor device die into contact with a second semiconductor device die. An energy-emitting device is disposed adjacent to the substrate to induce a bond between the first semiconductor device die and the second semiconductor device die such that the first semiconductor device die is released from the wafer tape and is attached to the second semiconductor device die.