公开(公告)号：US07301199B2

公开(公告)日：2007-11-27

申请号：US10196337

申请日：2002-07-16

申请人： Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

发明人： Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L29/06

CPC分类号： G11C13/025 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  C30B11/00 ,  C30B25/00 ,  C30B25/005 ,  C30B29/60 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C11/56 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/18 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02603 ,  H01L21/02617 ,  H01L21/02628 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L27/092 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/267 ,  H01L29/73 ,  H01L29/7781 ,  H01L29/78696 ,  H01L29/861 ,  H01L29/868 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L51/0048 ,  H01L51/0595 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y02E10/549 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/958 ,  Y10T428/2929 ,  Y10T428/298 ,  H01L2924/00

摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

摘要翻译： 本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。 在一些情况下，制品可以是单晶。 纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。 这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。 描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。 例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。

公开(公告)号：US07262501B2

公开(公告)日：2007-08-28

申请号：US11405864

申请日：2006-04-18

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/00 ,  H01L21/311

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  H01L24/95 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78684 ,  H01L29/7869 ,  H01L33/20 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US07254151B2

公开(公告)日：2007-08-07

申请号：US10734086

申请日：2003-12-11

申请人： Charles M. Lieber ,  Xiangfeng Duan ,  Yu Huang ,  Ritesh Agarwal

发明人： Charles M. Lieber ,  Xiangfeng Duan ,  Yu Huang ,  Ritesh Agarwal

IPC分类号： H01S5/00

CPC分类号： G11C13/025 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G11C2213/17 ,  G11C2213/18 ,  H01S5/021 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S5/341 ,  H01S5/343 ,  H01S5/347 ,  Y10S977/825 ,  Y10S977/951

摘要： This invention generally relates to nanotechnology and nanoelectronics as well as associated methods and devices. In particular, the invention relates to nanoscale optical components such as electroluminescence devices (e.g., LEDs), amplified stimulated emission devices (e.g., lasers), waveguides, and optical cavities (e.g., resonators). Articles and devices of a size greater than the nanoscale are also included. Such devices can be formed from nanoscale wires such as nanowires or nanotubes. In some cases, the nanoscale wire is a single crystal. In one embodiment, the nanoscale laser is constructed as a Fabry-Perot cavity, and is driven by electrical injection. Any electrical injection source may be used. For example, electrical injection may be accomplished through a crossed wire configuration, an electrode or distributed electrode configuration, or a core/shell configuration. The output wavelength can be controlled, for example, by varying the types of materials used to fabricate the device. One or more such nanoscale lasers may also be integrated with other nanoscale components within a device.

摘要翻译： 本发明一般涉及纳米技术和纳米电子学以及相关的方法和装置。 特别地，本发明涉及纳米尺度光学部件，例如电致发光器件（例如，LED），放大的受激发射器件（例如，激光器），波导和光学腔（例如谐振器）。 还包括尺寸大于纳米尺寸的物品和装置。 这样的器件可以由诸如纳米线或纳米管的纳米尺寸线形成。 在某些情况下，纳米线是单晶。 在一个实施例中，纳米级激光器被构造为法布里 - 珀罗腔，并且通过电注入驱动。 可以使用任何电喷射源。 例如，电注入可以通过交叉线配置，电极或分布电极配置或核/壳配置来实现。 可以例如通过改变用于制造器件的材料的类型来控制输出波长。 一个或多个这样的纳米尺度激光器也可以与器件内的其他纳米级组件集成。

公开(公告)号：US20070048492A1

公开(公告)日：2007-03-01

申请号：US11543337

申请日：2006-10-04

申请人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

发明人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC分类号： B32B5/00

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

公开(公告)号：US20060169788A1

公开(公告)日：2006-08-03

申请号：US11226187

申请日：2005-09-14

申请人： Stephen Empedocles ,  David Stumbo ,  Chunming Niu ,  Xiangfeng Duan

发明人： Stephen Empedocles ,  David Stumbo ,  Chunming Niu ,  Xiangfeng Duan

IPC分类号： G06K19/06

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C13/02 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/18 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

摘要： Macroelectronic substrate materials incorporating nanowires are described. These are used to provide underlying electronic elements (e.g., transistors and the like) for a variety of different applications. Methods for making the macroelectronic substrate materials are disclosed. One application is for transmission an reception of RF signals in small, lightweight sensors. Such sensors can be configured in a distributed sensor network to provide security monitoring. Furthermore, a method and apparatus for a radio frequency identification (RFID) tag is described. The RFID tag includes an antenna and a beam-steering array. The beam-steering array includes a plurality of tunable elements. A method and apparatus for an acoustic cancellation device and for an adjustable phase shifter that are enabled by nanowires are also described.

摘要翻译： 描述了纳入纳米线的宏电子衬底材料。 这些用于为各种不同的应用提供底层电子元件（例如，晶体管等）。 公开了制造宏电子衬底材料的方法。 一个应用是在小型轻型传感器中传输RF信号的接收。 这样的传感器可以配置在分布式传感器网络中，以提供安全监控。 此外，描述了用于射频识别（RFID）标签的方法和装置。 RFID标签包括天线和波束导向阵列。 光束转向阵列包括多个可调谐元件。 还描述了用于通过纳米线实现的声消除装置和可调移相器的方法和装置。

公开(公告)号：US20060019472A1

公开(公告)日：2006-01-26

申请号：US11117703

申请日：2005-04-29

申请人： Yaoling Pan ,  Xiangfeng Duan ,  Robert Dubrow ,  Jay Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda Romano ,  Dave Stumbo

发明人： Yaoling Pan ,  Xiangfeng Duan ,  Robert Dubrow ,  Jay Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda Romano ,  Dave Stumbo

IPC分类号： H01L21/20 ,  H01L21/4763

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/18 ,  C30B11/12 ,  C30B25/00 ,  C30B29/06 ,  C30B29/60 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7854 ,  H01L2924/0002 ,  Y10S438/962 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/843 ,  Y10S977/891 ,  H01L2924/00

摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

摘要翻译： 本发明涉及用于纳米线生长和收获的系统和方法。 在一个实施方案中，提供了纳米线生长和掺杂的方法，包括使用硅前体的组合的用于外延取向的纳米线生长的方法。 在本发明的另一方面，提供了通过使用牺牲生长层来提高纳米线质量的方法。 在本发明的另一方面，提供了将纳米线从一个衬底转移到另一个衬底的方法。

公开(公告)号：US09012882B2

公开(公告)日：2015-04-21

申请号：US13576519

申请日：2011-01-28

申请人： Xiangfeng Duan ,  Yu Huang ,  Jingwei Bai

发明人： Xiangfeng Duan ,  Yu Huang ,  Jingwei Bai

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/04 ,  G01N27/414

CPC分类号： H01L29/78684 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  G01N27/4145 ,  G01N27/4146 ,  H01L29/66742 ,  H01L29/78696 ,  Y10T428/24273 ,  Y10T428/24331 ,  Y10T428/24479

摘要： A graphene nanomesh includes a sheet of graphene having a plurality of periodically arranged apertures, wherein the plurality of apertures have a substantially uniform periodicity and substantially uniform neck width. The graphene nanomesh can open up a large band gap in a sheet of graphene to create a semiconducting thin film. The periodicity and neck width of the apertures formed in the graphene nanomesh may be tuned to alter the electrical properties of the graphene nanomesh. The graphene nanomesh is prepared with block copolymer lithography. Graphene nanomesh field-effect transistors (FETs) can support currents nearly 100 times greater than individual graphene nanoribbon devices and the on-off ratio, which is comparable with values achieved in nanoribbon devices, can be tuned by varying the neck width. The graphene nanomesh may also be incorporated into FET-type sensor devices.

摘要翻译： 石墨烯纳米片包括具有多个周期性布置的孔的石墨烯片，其中所述多个孔具有基本均匀的周期性和基本上均匀的颈部宽度。 石墨烯纳米粒子可以在一片石墨烯中打开大的带隙以产生半导体薄膜。 可以调节在石墨烯纳米颗粒中形成的孔的周期性和颈部宽度以改变石墨烯纳米粒子的电性能。 用嵌段共聚物光刻法制备石墨烯纳米粒子。 石墨烯纳米粒子场效应晶体管（FET）可以支持比单独的石墨烯纳米带器件大近100倍的电流，并且可以通过改变颈部宽度来调节与纳米棒器件中实现的值相当的开关比。 石墨烯纳米粒子也可以并入FET型传感器装置中。

公开(公告)号：US08252164B2

公开(公告)日：2012-08-28

申请号：US13113680

申请日：2011-05-23

申请人： Samuel Martin ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

发明人： Samuel Martin ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

IPC分类号： C25D13/02

CPC分类号： H01L29/0665 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/0673 ,  Y10S977/883

摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

摘要翻译： 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电（例如，交流电场）来使纳米线与电极对准和关联。 通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。

公开(公告)号：US07968474B2

公开(公告)日：2011-06-28

申请号：US11979949

申请日：2007-11-09

申请人： Samuel Martin ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

发明人： Samuel Martin ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

IPC分类号： H01L21/71

CPC分类号： H01L29/0665 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/0673 ,  Y10S977/883

摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

摘要翻译： 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电（例如，交流电场）来使纳米线与电极对准和关联。 通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。

公开(公告)号：US07851841B2

公开(公告)日：2010-12-14

申请号：US11760382

申请日：2007-06-08

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。