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    METHOD AND APPARATUS FOR DRY GAS PHASE CHEMICALLY ETCHING A STRUCTURE
    72.
    发明申请
    METHOD AND APPARATUS FOR DRY GAS PHASE CHEMICALLY ETCHING A STRUCTURE 审中-公开
    干气相化学蚀刻结构的方法与装置

    公开(公告)号：US20170025282A1

    公开(公告)日：2017-01-26

    申请号：US14807399

    申请日：2015-07-23

    Applicant: SPTS Technologies Limited

    Inventor： John Joseph NEUMANN, JR. ,  Kyle Stanton LEBOUITZ

    IPC: H01L21/306 ,  H01L21/308 ,  H01L21/67

    CPC classification number: H01L21/30604 ,  H01L21/0212 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67069

    Abstract: According to the invention there is provided a method of dry gas phase chemically etching a structure comprising the steps of: positioning the structure in an etch chamber, the structure comprising a first material and a second material, wherein the first material is selected from silicon, molybdenum, germanium, SiGe and tungsten, the second material is silicon dioxide or silicon nitride, and at least one surface of the first material is exposed so as to be contactable by a gas phase chemical etchant; etching the first material with a noble gas fluoride or halogen fluoride gas phase chemical etchant; and exposing the etch chamber to water vapour so that the step of etching the first material is performed in the presence of water vapour.

    Abstract translation: 根据本发明，提供了干气相化学蚀刻结构的方法，包括以下步骤：将结构定位在蚀刻室中，该结构包括第一材料和第二材料，其中第一材料选自硅， 钼，锗，SiGe和钨，所述第二材料是二氧化硅或氮化硅，并且所述第一材料的至少一个表面被暴露以便通过气相化学蚀刻剂接触; 用惰性气体氟化物或卤素氟化物气相化学蚀刻剂蚀刻第一种材料; 并将蚀刻室暴露于水蒸汽，使得蚀刻第一材料的步骤在水蒸气存在下进行。

    PLASMA ETCHING APPARATUS
    73.
    发明申请
    PLASMA ETCHING APPARATUS 审中-公开
    等离子体蚀刻装置

    公开(公告)号：US20160379807A1

    公开(公告)日：2016-12-29

    申请号：US15190722

    申请日：2016-06-23

    Applicant: SPTS Technologies Limited

    Inventor： ANTHONY PAUL WILBY ,  STEPHEN R. BURGESS ,  IAN MONCRIEFF ,  PAUL DENSLEY ,  CLIVE L. WIDDICKS ,  PAUL RICH ,  ADRIAN THOMAS

    IPC: H01J37/32 ,  C23C14/34 ,  H01L21/67

    CPC classification number: H01J37/32495 ,  C23C14/34 ,  H01J37/321 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67069

    Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

    Abstract translation: 用于蚀刻衬底的ICP等离子体蚀刻装置包括至少一个室，位于室内的衬底支撑件，用于产生用于蚀刻衬底的等离子体的等离子体生成装置，以及围绕衬底支撑件的保护结构， 在使用中，保护基板的周边部分免于材料的不希望的沉积。 保护结构被布置成电偏压并且由金属材料形成，使得金属材料可以从保护结构溅射到室的内表面上，以将颗粒材料粘附到内表面。

    METHOD OF DEGASSING
    75.
    发明申请
    METHOD OF DEGASSING 有权
    降解方法

    公开(公告)号：US20160155652A1

    公开(公告)日：2016-06-02

    申请号：US14950879

    申请日：2015-11-24

    Applicant: SPTS TECHNOLOGIES LIMITED

    Inventor： STEPHEN R. BURGESS ,  ANTHONY PAUL WILBY

    IPC: H01L21/67 ,  F24C7/04 ,  H01L21/324

    CPC classification number: H01L21/67276 ,  F24C7/04 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67748

    Abstract: A method of degassing semiconductor substrates includes sequentially loading a plurality of semiconductor substrates into a degas apparatus, and degassing the semiconductor substrates in parallel, the degassing of each semiconductor substrate commencing at a different time related to the time at which the semiconductor substrate was loaded into the degas apparatus. The method further includes unloading a semiconductor substrate from the degas apparatus when the semiconductor substrate has been degassed, while semiconductor substrates which were loaded later in the sequence are still being degassed. The degassing of the semiconductor substrates is performed at pressure of less than 10−4 Torr, and the degas apparatus is pumped continuously during the degassing of the semiconductor substrates.

    Abstract translation: 一种脱气半导体衬底的方法包括：将多个半导体衬底顺次加载到脱气装置中，并且平行地对半导体衬底进行脱气，每个半导体衬底的脱气开始于与半导体衬底被加载的时间相关的不同时间 脱气装置。 该方法还包括当半导体衬底脱气时从脱气装置卸载半导体衬底，而后续装载的半导体衬底仍被脱气。 在小于10-4乇的压力下进行半导体衬底的脱气，并且在半导体衬底的脱气期间连续地泵送脱气装置。

    METHOD OF ETCHING
    76.
    发明申请
    METHOD OF ETCHING 有权
    蚀刻方法

    公开(公告)号：US20150287637A1

    公开(公告)日：2015-10-08

    申请号：US14678048

    申请日：2015-04-03

    Applicant: SPTS TECHNOLOGIES LIMITED

    Inventor： JASH PATEL ,  JANET HOPKINS

    IPC: H01L21/768 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/66

    CPC classification number: H01L21/76898 ,  H01J37/321 ,  H01J37/32706 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/67069 ,  H01L22/12 ,  H01L22/26

    Abstract: A method is for etching a semiconductor substrate to reveal one or more features buried in the substrate. The method includes performing a first etch step using a plasma in which a bias power is applied to the substrate to produce an electrical bias, performing a second etch step without a bias power or with a bias power which is lower than the bias power applied during the first etch step, and alternately repeating the first and second etch steps.

    Abstract translation: 一种方法是蚀刻半导体衬底以露出掩埋在衬底中的一个或多个特征。 该方法包括使用等离子体执行第一蚀刻步骤，其中偏压功率施加到衬底以产生电偏压，执行没有偏置功率的第二蚀刻步骤或具有低于施加的偏置功率的偏置功率 第一蚀刻步骤，并交替地重复第一和第二蚀刻步骤。

    Substrate Processing System
    78.
    发明申请
    Substrate Processing System 有权

    公开(公告)号：US20250022728A1

    公开(公告)日：2025-01-16

    申请号：US18607498

    申请日：2024-03-17

    Applicant: SPTS Technologies Limited

    Inventor： Attila Nagy ,  Phil Waller ,  Chris Jones

    IPC: H01L21/67 ,  B65G47/90

    Abstract: A transfer vacuum chamber for handling a substrate under vacuum conditions is in communication with at least two substrate modules connected to the transfer vacuum chamber by a respective connection slot. The at least two substrate modules can receive at least one substrate. At least one of the at least two substrate modules is a substrate processing module. At least two load lock chambers are in vacuum communication with the transfer vacuum chamber. The transfer vacuum chamber includes at least two transfer robots disposed within the transfer vacuum chamber configured to transfer a substrate between the at least two load lock chambers and the at least one substrate processing module under vacuum conditions.

    PE-CVD apparatus and method
    80.
    发明授权
    PE-CVD apparatus and method 有权

    公开(公告)号：US12077863B2

    公开(公告)日：2024-09-03

    申请号：US18372123

    申请日：2023-09-24

    Applicant: SPTS Technologies Limited

    Inventor： Stephen Burgess ,  Kathrine Crook ,  Daniel Archard ,  William Royle ,  Euan Alasdair Morrison

    IPC: C23C16/40 ,  C23C16/455 ,  C23C16/513

    CPC classification number: C23C16/513 ,  C23C16/455

    Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

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