公开(公告)号：US20080105651A1

公开(公告)日：2008-05-08

申请号：US11572321

申请日：2005-08-09

申请人： Katsumi Mabuchi ,  Haruo Akahoshi ,  Yasuo Kamigata ,  Masanobu Habiro ,  Hiroshi Ono

发明人： Katsumi Mabuchi ,  Haruo Akahoshi ,  Yasuo Kamigata ,  Masanobu Habiro ,  Hiroshi Ono

IPC分类号： C09K13/00 ,  C03C15/00

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： A polishing liquid for CMP has a composition loaded with, for example, an inorganic salt, a protective film forming agent and a surfactant capable of imparting a dissolution accelerating activity to enlarge a difference between polishing speed under non-load and polishing speed under load. By virtue of this polishing liquid for CMP, there can be simultaneously accomplished a speed increase for increasing CMP productivity, and wiring planarization for miniaturization and multilayer formation of wiring.

摘要翻译： 用于CMP的抛光液具有负载有例如无机盐，保护膜形成剂和能够赋予溶解促进活性的表面活性剂的组合物，以增加负载下的抛光速度和负载下的抛光速度之间的差异。 由于该CMP用抛光液，可以同时实现提高CMP生产率的速度增加，以及用于小型化和布线的多层形成的布线平面化。

公开(公告)号：US20080090478A1

公开(公告)日：2008-04-17

申请号：US11867091

申请日：2007-10-04

申请人： Satoru Amou ,  Haruo Akahoshi ,  Hiroshi Shimizu ,  Akinori Hanawa

发明人： Satoru Amou ,  Haruo Akahoshi ,  Hiroshi Shimizu ,  Akinori Hanawa

IPC分类号： B32B5/02 ,  B05D3/06 ,  C08F236/06 ,  C08F290/06 ,  C08F4/32 ,  C08K5/34

CPC分类号： B32B5/02 ,  B32B27/04 ,  C08F290/06 ,  C08K5/0025 ,  C08L53/02 ,  C08L53/025 ,  H05K1/032 ,  H05K1/0373 ,  H05K3/4626 ,  H05K2201/012 ,  H05K2201/0158 ,  H05K2201/0209 ,  Y10S428/901 ,  Y10T428/31757 ,  Y10T442/2631 ,  Y10T442/2738 ,  C08L2666/02

摘要： It is an objective of this invention to obtain: a composition superior in processability, dielectric properties, heat resistance, and adhesiveness by controlling phase separation of a 1,2-polybutadiene resin composition without deterioration of dielectric properties exhibited in high-frequency regions; and a multilayer printed wiring board using the same. This invention relates to a polybutadiene resin composition, comprising: a crosslinking component (A) comprising repeating units represented by the following formula (1) and having a number average molecular weight of 1000 to 20000; a radical polymerization initiator (B), the one-minute half-life temperature of which is 80° C. to 140° C.; and a radical polymerization initiator (C), the one-minute half-life temperature of which is 170° C. to 230° C.; wherein 3 to 10 parts by weight of the component (B) and 5 to 15 parts by weight of the component (C) are contained relative to 100 parts by weight of the component (A). The invention also relates to a prepreg, a laminate, and a printed wiring board, which are produced using the same.

摘要翻译： 本发明的目的是获得：通过控制1,2-聚丁二烯树脂组合物的相分离而不会在高频区域表现出的介电性能降低，从而加工性，介电特性，耐热性和粘合性优异; 和使用其的多层印刷线路板。 本发明涉及一种聚丁二烯树脂组合物，其包含：交联组分（A），其包含由下式（1）表示的数均分子量为1000至20000的重复单元; 自由基聚合引发剂（B），其一分钟半衰期温度为80℃至140℃; 和自由基聚合引发剂（C），其一分钟的半衰期温度为170℃至230℃; 相对于100重量份的成分（A），含有3〜10重量份的成分（B）和5〜15重量份的成分（C）。 本发明还涉及使用其制造的预浸料坯，层压板和印刷线路板。

公开(公告)号：US20070202682A1

公开(公告)日：2007-08-30

申请号：US11626541

申请日：2007-01-24

申请人： Kenichi YAMAMOTO ,  Toshinori Kawamura ,  Haruo Akahoshi

发明人： Kenichi YAMAMOTO ,  Toshinori Kawamura ,  Haruo Akahoshi

IPC分类号： H01L21/44

CPC分类号： H01L23/3128 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/85 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/45155 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01016 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H05K3/241 ,  H05K3/244 ,  H05K2203/1476 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/00012

摘要： Improvement in shock-resistant strength of a soldered joint is aimed at, and the variation in the plating film formed on an electrode pad is reduced.In the step which forms a plating film (for example, Ni film) by an electrolytic plating method on the surface of an electrode pad, the first layer is formed in the front surface of the electrode pad with the first current density, and the second layer is formed in the front surface of the first layer with the second current density higher than the first current density after that.

摘要翻译： 针对焊接接头的耐冲击强度的提高，电极焊盘上形成的电镀膜的变化减小。 在电极焊盘的表面上通过电解电镀法形成电镀膜（例如Ni膜）的步骤中，在电极焊盘的前表面形成有第一电流密度的第一层，第二层 在第一层的前表面形成有第二电流密度高于之后的第一电流密度的层。

公开(公告)号：US20070147551A1

公开(公告)日：2007-06-28

申请号：US11643691

申请日：2006-12-22

申请人： Katsumi Mabuchi ,  Haruo Akahoshi ,  Masanobu Habiro ,  Takafumi Sakurada ,  Yutaka Nomura

发明人： Katsumi Mabuchi ,  Haruo Akahoshi ,  Masanobu Habiro ,  Takafumi Sakurada ,  Yutaka Nomura

IPC分类号： H03D1/00

CPC分类号： C09G1/04

摘要： A CMP slurry is mixed with an oxidant in polishing and contains a copper rust inhibitor, a water-soluble polymer, a pH controller capable of forming a complex with copper, and water, and is substantially free from abrasive. The CMP slurry effectively reduces dishing in chemical polishing of copper and forms reliable wiring. Preferably, the contents of the rust inhibitor, the water-soluble polymer, and the oxidant are 0.1 to 5 wt %, 0.05 to 5 wt %, and 0.01 to 5M relative to 1 liter of the CMP slurry, respectively, and the amount of the pH controller is a necessary amount for adjusting pH of the CMP slurry to 1.5 to 2.5.

摘要翻译： 将CMP浆料与抛光中的氧化剂混合，并含有铜锈病抑制剂，水溶性聚合物，能够与铜形成络合物的pH控制剂和水，并且基本上不含研磨剂。 CMP浆料有效减少了铜化学抛光中的凹陷，形成了可靠的布线。 防锈剂，水溶性聚合物和氧化剂的含量优选分别相对于1升CMP浆料为0.1〜5重量％，0.05〜5重量％，0.01〜5微米， pH控制器是将CMP浆料的pH调节至1.5至2.5的必需量。

公开(公告)号：US20070059584A1

公开(公告)日：2007-03-15

申请号：US11518204

申请日：2006-09-11

申请人： Hiroshi Nakano ,  Hiroshi Yoshida ,  Masatoshi Sugimasa ,  Katsumi Mabuchi ,  Haruo Akahoshi

发明人： Hiroshi Nakano ,  Hiroshi Yoshida ,  Masatoshi Sugimasa ,  Katsumi Mabuchi ,  Haruo Akahoshi

IPC分类号： H01M4/02 ,  H01M4/86 ,  C25B11/02

CPC分类号： C25D1/00 ,  C25D1/006 ,  C25D9/04 ,  C25D11/02 ,  C25D11/045 ,  G01N27/4045 ,  H01M4/0404 ,  H01M4/134 ,  H01M4/32 ,  H01M4/38 ,  H01M4/387 ,  H01M4/8807 ,  H01M4/8817 ,  H01M4/8853 ,  H01M4/92 ,  H01M10/0525 ,  Y02E60/122

摘要： In an electrode in electrochemical device, particularly an anode lithium ion secondary battery, a cathode for use in alkali storage battery, an electrode for use in fuel cell, or a capacitor electrode, a metal structure has nano size micro-pillars is constructed with an electrode active material being formed on the surface of the metal structure. The metal structure having nano size micro-pillars can be formed, for example, by forming a metal layer as an electrode material by plating to the surface of a substrate having pores and then removing the substrate by dissolution, the metal filled in the pores of the substrate to form a group of micro-pillars. And the active material can be formed by depositing metal by plating. Since the active material is in direct contact with the conductive skeleton, the conducting agent for connecting the active materials to each other may not be added at all.

摘要翻译： 在电化学装置中的电极中，特别是阳极锂离子二次电池，碱性蓄电池用阴极，燃料电池用电极或电容电极中，金属结构具有纳米尺寸的微柱， 电极活性材料形成在金属结构的表面上。 具有纳米尺寸微柱的金属结构可以通过例如通过将具有孔的基板的表面电镀形成作为电极材料的金属层，然后通过溶解除去基板而形成， 底物形成一组微柱。 并且活性物质可以通过电镀沉积金属而形成。 由于活性物质与导电骨架直接接触，所以可能根本不添加用于将活性物质彼此连接的导电剂。

公开(公告)号：US20060092634A1

公开(公告)日：2006-05-04

申请号：US11265259

申请日：2005-11-03

申请人： Ikuo Hiyama ,  Hiroki Kaneko ,  Toshiaki Tanaka ,  Tsunenori Yamamoto ,  Akitoyo Konno ,  Katsumi Kondo ,  Haruo Akahoshi

发明人： Ikuo Hiyama ,  Hiroki Kaneko ,  Toshiaki Tanaka ,  Tsunenori Yamamoto ,  Akitoyo Konno ,  Katsumi Kondo ,  Haruo Akahoshi

IPC分类号： F21V9/00

CPC分类号： G09F13/22 ,  G02F1/133603 ,  H01L25/0753 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A thin light source unit employs a plurality of light emitting diode chips in multiple colors to generate highly uniform white light at a low cost and with a high light utilization efficiency. The light source unit has light emitting diode chips, lead frames, and a transparent sealer. A plurality of the light emitting diode chips in the same color are connected in series to three or more sets of the lead frames. The light emitting diode chips in at least three different colors are integrally sealed with the transparent sealer. An illuminating apparatus using the light source units, and a display apparatus using the illuminating apparatus are also provided.

公开(公告)号：US20050252684A1

公开(公告)日：2005-11-17

申请号：US11113011

申请日：2005-04-25

申请人： Takeyiki Itabashi ,  Haruo Akahoshi ,  Tadashi Iida ,  Yoshinori Ueda ,  Eiji Takai ,  Naoki Nishimura

发明人： Takeyiki Itabashi ,  Haruo Akahoshi ,  Tadashi Iida ,  Yoshinori Ueda ,  Eiji Takai ,  Naoki Nishimura

IPC分类号： H05K3/46 ,  C23C18/16 ,  C23C18/31 ,  C23C18/40 ,  H05K3/18 ,  H05K1/11 ,  B05D3/04 ,  B05D3/10 ,  H01R12/04

CPC分类号： C23C18/1617 ,  C23C18/40 ,  H05K3/187

摘要： A method is provided for removing plating blocking ions, such as anions, in pairs with copper ions and oxidant ions of a copper ion reducing agent from an electroless copper plating solution and keeping a constant salt concentration in the electroless copper plating solution during plating. The electroless copper plating method uses a plating solution containing copper sulfate as copper ion sources, and a copper ion complexing agent as copper ion sources, glyoxylic acid as a copper ion reducing agent, and a pH conditioner. The method is characterized by precipitating and removing sulfuric and oxalic ions in said electroless copper plating solution and keeping an optimum concentration of at least one of sulfuric and oxalic ions in said electroless copper plating solution during plating.

摘要翻译： 提供了一种从电化学镀铜溶液中去除铜离子还原剂的铜离子和氧化剂离子的电镀阻挡离子（例如阴离子）的方法，并且在镀覆期间在化学镀铜溶液中保持恒定的盐浓度。 无电镀铜方法使用含有硫酸铜作为铜离子源的镀液，铜离子源铜离子络合剂，作为铜离子还原剂的乙醛酸和pH调节剂。 该方法的特征在于在所述化学镀铜溶液中析出和除去硫酸和草酸离子，并且在镀覆期间保持所述无电镀铜溶液中的硫酸和草酸离子中的至少一种的最佳浓度。

公开(公告)号：US06924971B2

公开(公告)日：2005-08-02

申请号：US10212750

申请日：2002-08-07

申请人： Yuichi Satsu ,  Akio Takahashi ,  Tadashi Fujieda ,  Takumi Ueno ,  Haruo Akahoshi

发明人： Yuichi Satsu ,  Akio Takahashi ,  Tadashi Fujieda ,  Takumi Ueno ,  Haruo Akahoshi

IPC分类号： H05K3/46 ,  H01B3/00 ,  H01B3/30 ,  H01L23/12 ,  H01L23/14 ,  H01L23/498 ,  H01L23/64 ,  H01L23/66 ,  H05K1/16 ,  H01G4/06

CPC分类号： H05K1/162 ,  H01L23/145 ,  H01L23/49894 ,  H01L23/642 ,  H01L23/66 ,  H01L2924/0002 ,  H05K2201/0209 ,  H05K2201/0215 ,  H05K2201/0218 ,  Y10T428/249921 ,  Y10T428/25 ,  Y10T428/254 ,  Y10T428/256 ,  Y10T428/26 ,  Y10T428/269 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2998 ,  Y10T428/31 ,  H01L2924/00

摘要： A high dielectric composite material obtained by subjecting submicron particles of an inorganic filler containing a metal as its essential component to an insulating treatment such as a chemical treatment, further subjecting to a surface treatment for improving their compatibility with organic resins, and then dispersing in an organic resin, has a dielectric constant of 15 or above, with its dielectric loss tangent in the frequency region of from 100 MHz to 80 GHz being 0.1 or less, and can therefore be used effectively for multilayer wiring boards and module substrates.

摘要翻译： 通过将含有金属的无机填料的亚微米颗粒作为必要组分进行绝缘处理如化学处理获得的高介电复合材料，进一步进行表面处理以提高其与有机树脂的相容性，然后分散在 有机树脂的介电常数为15以上，在100MHz〜80GHz的频率范围内的介电损耗角正切为0.1以下，因此能够有效地用于多层布线基板和模块基板。

公开(公告)号：US06627997B1

公开(公告)日：2003-09-30

申请号：US09463431

申请日：2000-01-27

申请人： Shuji Eguchi ,  Akira Nagai ,  Haruo Akahoshi ,  Takumi Ueno ,  Toshiya Satoh ,  Masahiko Ogino ,  Asao Nishimura ,  Ichiro Anjo ,  Hideki Tanaka

发明人： Shuji Eguchi ,  Akira Nagai ,  Haruo Akahoshi ,  Takumi Ueno ,  Toshiya Satoh ,  Masahiko Ogino ,  Asao Nishimura ,  Ichiro Anjo ,  Hideki Tanaka

IPC分类号： H01L2348

CPC分类号： H01L24/97 ,  H01L21/561 ,  H01L21/565 ,  H01L23/4334 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2225/1005 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/07802 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/0401

摘要： In a multi-chip module, a plurality of semiconductor chips are mounted on a single wiring board. Upper surfaces of the semiconductor chips are covered with a single heat spread plate, and the whole space around the semiconductor chips, sandwiched between the wiring board and the heat spread plate, is filled with resin. The semiconductor chips are interconnected through the resin so that any stress exerted on any chips is dispersed. This diminishes the occurrence of cracks caused by stress concentration. Since the semiconductor chips and the heat spread plate are bonded together with resin, even if there are variations in size of the chips, both can be bonded easily. Further, the bonding of all the chips and the heat spread plate can be done in a single process.

摘要翻译： 在多芯片模块中，多个半导体芯片安装在单个布线板上。 半导体芯片的上表面被单个扩散板覆盖，并且夹在布线板和扩散板之间的半导体芯片周围的整个空间填充有树脂。 半导体芯片通过树脂相互连接，从而分散施加在任何芯片上的任何应力。 这减少了由应力集中引起的裂纹的发生。 由于半导体芯片和热扩散板与树脂粘合在一起，即使芯片的尺寸有变化，两者也可以容易地结合。 此外，所有芯片和散热板的接合可以在单个工艺中完成。

公开(公告)号：US6028364A

公开(公告)日：2000-02-22

申请号：US809233

申请日：1997-03-19

申请人： Masahiko Ogino ,  Akira Nagai ,  Shuji Eguchi ,  Toshiaki Ishii ,  Masanori Segawa ,  Haruo Akahoshi ,  Akio Takahashi ,  Takao Miwa ,  Naotaka Tanaka ,  Ichirou Anjou

发明人： Masahiko Ogino ,  Akira Nagai ,  Shuji Eguchi ,  Toshiaki Ishii ,  Masanori Segawa ,  Haruo Akahoshi ,  Akio Takahashi ,  Takao Miwa ,  Naotaka Tanaka ,  Ichirou Anjou

IPC分类号： H01L23/498 ,  H01L23/48 ,  H01L23/52 ,  H05K1/00 ,  H05K7/20

CPC分类号： H01L23/49827 ,  H01L23/49816 ,  H01L24/32 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73204 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/12042 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351

摘要： A semiconductor device has a multi-layered wiring structure having a conductor layer to be electrically connected to a packaging substrate, the structure being provided on a circuit formation surface of a semiconductor chip; and ball-like terminals disposed in a grid array on the surface of the multi-layered wiring structure on the packaging substrate side, wherein the multi-layered wiring structure includes a buffer layer for relieving a thermal stress produced between the semiconductor chip and the packaging substrate, after packaging thereof, and multiple wiring layers. In this semiconductor device, the wiring distance is shorter than that of a conventional semiconductor device, so that an inductance component becomes smaller, to thereby increase the signal speed; the distance between a ground layer and a power supply layer is shortened, to reduce noise produced upon operation, and also a thermal stress upon packaging is relieved by the buffer layer of the multi-layered wiring structure, resulting in the improved connection reliability; and the number of terminals per unit is increased because of elimination of wire bonding.

摘要翻译： PCT No.PCT / JP95 / 00714 Sec。 371日期1997年3月19日 102（e）1997年3月19日PCT提交1995年4月12日PCT公布。 出版物WO96 / 09645 日期：1996年3月28日半导体器件具有多层布线结构，具有与封装基板电连接的导体层，该结构设置在半导体芯片的电路形成面上; 以及设置在所述多层布线结构体的所述封装基板侧的表面上的栅格阵列中的球状端子，其中所述多层布线结构包括用于缓解在所述半导体芯片和所述封装之间产生的热应力的缓冲层 基板，其包装之后，以及多个布线层。 在该半导体装置中，布线距离短于以往的半导体装置，因此电感成分变小，信号速度变高; 接地层和电源层之间的距离缩短，以减少操作时产生的噪声，并且通过多层布线结构的缓冲层减轻了包装上的热应力，从而提高了连接可靠性; 并且由于引线接合的消除，每单元的端子数量增加。