公开(公告)号：US09875992B2

公开(公告)日：2018-01-23

申请号：US14821767

申请日：2015-08-09

Applicant: Junyeong Heo ,  Chajea Jo ,  Taeje Cho

Inventor： Junyeong Heo ,  Chajea Jo ,  Taeje Cho

IPC: H01L23/00 ,  H01L23/367 ,  H01L23/498 ,  H01L23/544 ,  H01L25/065 ,  H01L25/00 ,  H01L23/48

CPC classification number: H01L25/0657 ,  H01L23/3677 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/50 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/5448 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/1403 ,  H01L2224/14131 ,  H01L2224/14136 ,  H01L2224/14177 ,  H01L2224/14179 ,  H01L2224/14505 ,  H01L2224/14519 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/17177 ,  H01L2224/17181 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32148 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/8113 ,  H01L2224/83104 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06589 ,  H01L2225/06593 ,  H01L2924/15311 ,  H01L2924/3512 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/17136 ,  H01L2224/17179

Abstract: An embodiment includes a semiconductor package comprising: a substrate; a first semiconductor chip mounted on the substrate; a second semiconductor chip mounted on a top surface of the first semiconductor chip; a connecting bump disposed between the first and second semiconductor chips to electrically connect the second semiconductor chip to the first semiconductor chip; and a first heat dissipation part disposed on the top surface of the first semiconductor chip between the first and second semiconductor chips and spaced apart from a bottom surface of the second semiconductor chip.

公开(公告)号：US10186500B2

公开(公告)日：2019-01-22

申请号：US15357741

申请日：2016-11-21

Applicant: Seung-Kwan Ryu ,  Yonghwan Kwon ,  Yun Seok Choi ,  Chajea Jo ,  Taeje Cho

Inventor： Seung-Kwan Ryu ,  Yonghwan Kwon ,  Yun Seok Choi ,  Chajea Jo ,  Taeje Cho

IPC: H01L25/10 ,  H01L25/00

Abstract: A semiconductor package includes upper and lower semiconductor chip packages, and a redistribution wiring layer pattern interposed between the packages. The lower package includes a molding layer in which at least one chip is embedded, and has a top surface and an inclined sidewall surface along which the redistribution wiring layer pattern is formed. The upper and lower packages are electrically connected to through the redistribution wiring layer pattern. A first package may be formed by a wafer level packaging technique and may include a redistribution wiring layer as a substrate, a semiconductor chip disposed on the redistribution wiring layer, and a molding layer on which the lower package, redistribution wiring layer pattern and upper package are disposed.

公开(公告)号：US10192855B2

公开(公告)日：2019-01-29

申请号：US14841736

申请日：2015-09-01

Applicant: Sunkyoung Seo ,  Chajea Jo ,  Ji Hwang Kim ,  Taeje Cho

Inventor： Sunkyoung Seo ,  Chajea Jo ,  Ji Hwang Kim ,  Taeje Cho

IPC: H01L23/02 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L25/10 ,  H01L23/367 ,  H01L23/13 ,  H01L23/36 ,  H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L25/18

Abstract: A semiconductor package is provided. The semiconductor package include a lower semiconductor package including a lower package substrate and a lower semiconductor chip mounted thereon, and an upper semiconductor package provided on the lower semiconductor package to include an upper package substrate and an upper semiconductor chip mounted thereon. The upper package substrate include an upper heat-dissipation pattern, the lower semiconductor chip include a first via connected to the upper heat-dissipation pattern through the lower semiconductor chip, and the first via may provide a pathway for dissipating heat generated in the lower semiconductor chip.

公开(公告)号：US09461029B2

公开(公告)日：2016-10-04

申请号：US14744031

申请日：2015-06-19

Applicant: Hye-young Jang ,  Chang-Seong Jeon ,  Chajea Jo ,  Taeje Cho

Inventor： Hye-young Jang ,  Chang-Seong Jeon ,  Chajea Jo ,  Taeje Cho

IPC: H01L21/50 ,  H01L25/00 ,  H01L25/065 ,  H01L23/00 ,  H01L25/18 ,  H01L23/31

CPC classification number: H01L25/0657 ,  H01L23/3128 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/1412 ,  H01L2224/1413 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17104 ,  H01L2224/2919 ,  H01L2224/32013 ,  H01L2224/321 ,  H01L2224/32145 ,  H01L2224/33181 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83379 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/014

Abstract: A semiconductor package may include a first semiconductor chip including a first surface facing a package substrate, a second surface opposite to the first surface, and at least one through-electrode penetrating the first semiconductor chip, a molding layer molding the first semiconductor chip and exposing the second surface of the first semiconductor chip, a second semiconductor chip stacked on the second surface of the first semiconductor chip, and a non-conductive film provided between the first and second semiconductor chips. The second semiconductor chip includes an overhang portion extending past an edge of the first semiconductor chip. For example, a size of the second semiconductor chip may be greater than that of the first semiconductor chip, so the second semiconductor chip has an overhang. The second semiconductor chip includes at least one interconnecting terminal electrically connected to the at least one through-electrode.

Abstract translation: 半导体封装可以包括第一半导体芯片，其包括面向封装基板的第一表面，与第一表面相对的第二表面，以及穿透第一半导体芯片的至少一个贯通电极，模制第一半导体芯片的模制层和暴露 第一半导体芯片的第二表面，堆叠在第一半导体芯片的第二表面上的第二半导体芯片，以及设置在第一和第二半导体芯片之间的非导电膜。 第二半导体芯片包括延伸穿过第一半导体芯片的边缘的突出部分。 例如，第二半导体芯片的尺寸可以大于第一半导体芯片的尺寸，因此第二半导体芯片具有突出端。 第二半导体芯片包括电连接到至少一个通孔的至少一个互连端子。

公开(公告)号：US08558371B2

公开(公告)日：2013-10-15

申请号：US13011286

申请日：2011-01-21

Applicant: JiSun Hong ,  Taeje Cho ,  Un-Byoung Kang ,  Hyuekjae Lee ,  Youngbok Kim ,  Hyung-sun Jang

Inventor： JiSun Hong ,  Taeje Cho ,  Un-Byoung Kang ,  Hyuekjae Lee ,  Youngbok Kim ,  Hyung-sun Jang

IPC: H01L23/12

CPC classification number: H01L23/3114 ,  H01L21/50 ,  H01L21/76898 ,  H01L23/10 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a wafer level packaging method and a semiconductor device fabricated using the same. In the method, a substrate comprising a plurality of chips is provided. An adhesive layer is formed on the substrate corresponding to boundaries of the plurality of chips. A cover plate covering an upper portion of the substrate and having at least one opening exposing the adhesive layer or the substrate at the boundaries among the plurality of chips is attached to the adhesive layer.

Abstract translation: 提供了一种晶片级封装方法和使用其制造的半导体器件。 在该方法中，提供包括多个芯片的基板。 在对应于多个芯片的边界的基板上形成粘合剂层。 覆盖基板的上部并且具有至少一个露出多个芯片之间的边界处的粘合剂层或基板的开口的盖板附接到粘合剂层。

公开(公告)号：US09793165B2

公开(公告)日：2017-10-17

申请号：US13345441

申请日：2012-01-06

Applicant: Seyoung Jeong ,  Taeje Cho ,  Hogeon Song ,  Kyu-Ha Lee

Inventor： Seyoung Jeong ,  Taeje Cho ,  Hogeon Song ,  Kyu-Ha Lee

IPC: H01L21/768 ,  H01L21/683 ,  H01L25/065 ,  H01L25/10 ,  H01L23/14 ,  H01L23/498 ,  H01L21/48 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L21/76898 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68331 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05109 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/48157 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method of fabricating a semiconductor device is provided. The method may include preparing a substrate having a first surface and a second surface, forming a via hole exposing at least a portion of the substrate from the first surface of the substrate, forming a first insulating film on an inner wall of the via hole, forming a conductive connection part filling an inside of the via hole including the first insulating film, polishing the second surface of the substrate until the conductive connection part is exposed, and selectively forming a second insulating film on the second surface of the substrate using an electrografting method to expose the conductive connection part.

公开(公告)号：US20170004990A1

公开(公告)日：2017-01-05

申请号：US15112429

申请日：2014-03-19

Applicant: Un-Byoung Kang ,  Joonsik Sohn ,  Jung-Seok Ahn ,  Chungsun Lee ,  Taeje Cho

Inventor： Un-Byoung Kang ,  Joonsik Sohn ,  Jung-Seok Ahn ,  Chungsun Lee ,  Taeje Cho

IPC: H01L21/683 ,  H01L23/00 ,  H01L25/00 ,  H01L21/78 ,  H01L23/544 ,  H01L25/065 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L21/6836 ,  H01L21/48 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/544 ,  H01L24/02 ,  H01L24/03 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2223/5446 ,  H01L2224/0239 ,  H01L2224/03002 ,  H01L2224/06181 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06582 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/11 ,  H01L21/304 ,  H01L2221/68363 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2224/03 ,  H01L2224/85

Abstract: Provided are methods of fabricating a semiconductor device. According to the method, a first glue layer, a first release layer, a second glue layer, and a second release layer may be sequentially interposed between a carrier and a device wafer. All of the first glue layer, the first release layer, the second glue layer, and the second release layer may be formed of thermosetting resin.

Abstract translation: 提供制造半导体器件的方法。 根据该方法，第一胶合层，第一剥离层，第二胶层和第二剥离层可以顺序插入载体和器件晶片之间。 所有第一胶合层，第一释放层，第二胶层和第二剥离层可以由热固性树脂形成。

公开(公告)号：US20120018885A1

公开(公告)日：2012-01-26

申请号：US12960843

申请日：2010-12-06

Applicant: Go Eun Lee ,  Taeje Cho ,  Un-Byoung Kang ,  Seongmin Ryu ,  Jung-Hwan Kim ,  Tae Hong Min

Inventor： Go Eun Lee ,  Taeje Cho ,  Un-Byoung Kang ,  Seongmin Ryu ,  Jung-Hwan Kim ,  Tae Hong Min

IPC: H01L23/498

CPC classification number: H01L23/481 ,  H01L23/49816 ,  H01L23/49855 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor apparatus includes a base substrate and a logic chip disposed on the base substrate. The logic chip includes a memory control circuit, a first through silicon via, and a second through silicon via. The memory control circuit is disposed on a first surface of a substrate of the logic chip, and a memory chip is disposed on a second surface of the substrate of the logic chip. The first through silicon via electrically connects the memory control circuit and the memory chip, the second through silicon via is electrically connected to the memory chip and is configured to transmit power for the memory chip, the second through silicon via is electrically insulated from the logic chip, and the first surface of the substrate of the logic chip faces the base substrate.

Abstract translation: 半导体装置包括基底基板和布置在基底基板上的逻辑芯片。 逻辑芯片包括存储器控制电路，第一通孔硅通孔和第二硅通孔。 存储器控制电路设置在逻辑芯片的基板的第一表面上，并且存储芯片设置在逻辑芯片的基板的第二表面上。 第一通孔硅通过电连接存储器控制电路和存储器芯片，第二通孔硅通孔电连接到存储器芯片，并被配置为向存储器芯片发送功率，第二通孔硅通孔与逻辑电绝缘 芯片，并且逻辑芯片的基板的第一表面面向基底。

公开(公告)号：US20120175782A1

公开(公告)日：2012-07-12

申请号：US13347270

申请日：2012-01-10

Applicant: Yunhyeok Im ,  Tae Hong Min ,  Taeje Cho

Inventor： Yunhyeok Im ,  Tae Hong Min ,  Taeje Cho

IPC: H01L23/522

CPC classification number: H01L23/49827 ,  H01L23/49822 ,  H01L23/49838 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/0401

Abstract: Provided are a semiconductor package and a method of manufacturing the same. a substrate including a first face and a second face, wherein the first and second faces face each other; a first ground pattern disposed on the first face; a second ground pattern disposed on the second face; a plurality of ground via plugs which connect the first ground pattern and the second ground pattern, wherein the plurality of ground via plugs penetrate the substrate; and a first aluminum oxide film interposed between the plurality of ground via plugs, wherein a ground voltage is applied to the plurality of ground via plugs. The semiconductor package may be manufactured using an anodic oxidation process.

Abstract translation: 提供半导体封装及其制造方法。 包括第一面和第二面的衬底，其中所述第一面和所述第二面彼此面对; 设置在第一面上的第一接地图案​​; 设置在所述第二面上的第二接地图案; 多个接地通孔插头，其连接第一接地图案​​和第二接地图案，其中多个接地通孔插头穿透基板; 以及插入在所述多个接地通孔插头之间的第一氧化铝膜，其中通过插头将多个接地电压施加接地电压。 半导体封装可以使用阳极氧化工艺制造。

公开(公告)号：US20120119346A1

公开(公告)日：2012-05-17

申请号：US13243996

申请日：2011-09-23

Applicant: YUNHYEOK IM ,  Chungsun Lee ,  Taeje Cho

Inventor： YUNHYEOK IM ,  Chungsun Lee ,  Taeje Cho

IPC: H01L23/02 ,  H01L23/48

CPC classification number: H01L23/3128 ,  H01L21/563 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/42 ,  H01L23/49827 ,  H01L23/552 ,  H01L24/29 ,  H01L25/03 ,  H01L2224/16225 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/92225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/14 ,  H01L2924/00

Abstract: Disclosed are a semiconductor package and a method of manufacturing the same. The semiconductor package comprises a package cap which is capable of radiating high temperatures and performs a shield function preventing transmission of electromagnetic waves into and/or out of the semiconductor package. The semiconductor package including the package cap prevents chip malfunctions and improves device reliability. The package cap is positioned to cover first and second semiconductor chips of a semiconductor package.

Abstract translation: 公开了一种半导体封装及其制造方法。 半导体封装包括封装帽，其能够辐射高温并执行屏蔽功能，防止电磁波进入和/或流出半导体封装。 包括封装盖的半导体封装防止芯片故障并提高器件的可靠性。 封装帽定位成覆盖半导体封装的第一和第二半导体芯片。