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公开(公告)号:US5431324A
公开(公告)日:1995-07-11
申请号:US8578
申请日:1993-01-22
申请人: Ryoichi Kajiwara , Mituo Katou , Kazuya Takahashi , Minoru Maruta , Tokiyuki Seto , Kunihiro Tsubosaki
发明人: Ryoichi Kajiwara , Mituo Katou , Kazuya Takahashi , Minoru Maruta , Tokiyuki Seto , Kunihiro Tsubosaki
IPC分类号: H01L21/607 , B23K20/10 , H01L21/60
CPC分类号: H01L24/85 , B23K20/10 , H01L24/78 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/4847 , H01L2224/73215 , H01L2224/73265 , H01L2224/78301 , H01L2224/78313 , H01L2224/85205 , H01L2224/859 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01033 , H01L2924/01082 , H01L2924/10253 , H01L2924/12042 , H01L2924/181
摘要: An ultrasonic bonding apparatus comprises an ultrasonic wave controller, a bonding system including a bonding head, a laser oscillator, a laser optics, a vibration monitoring system including a vibrometer, and a mechanism for feeding a result of monitoring back to a bonding condition.
摘要翻译: 超声波接合装置包括超声波控制器,包括接合头,激光振荡器,激光光学元件,包括振动计的振动监测系统的接合系统和用于将监测结果馈送回到接合条件的机构。
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公开(公告)号:US5323952A
公开(公告)日:1994-06-28
申请号:US946627
申请日:1992-09-18
申请人: Mituo Kato , Ryoichi Kajiwara , Kazuya Takahashi , Setuo Sekine , Tokiyuki Seto
发明人: Mituo Kato , Ryoichi Kajiwara , Kazuya Takahashi , Setuo Sekine , Tokiyuki Seto
IPC分类号: H01L21/607 , B23K20/10 , H01L21/60 , H01L21/66
CPC分类号: H01L24/85 , B23K20/10 , H01L24/48 , H01L24/78 , B23K2201/40 , H01L2224/05644 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45644 , H01L2224/48455 , H01L2224/4847 , H01L2224/48844 , H01L2224/78302 , H01L2224/78313 , H01L2224/78318 , H01L2224/85203 , H01L2224/85205 , H01L2224/85214 , H01L24/45 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/20302 , H01L2924/20303 , H01L2924/20755 , H01L2924/30105
摘要: A bonding apparatus comprising a bonding tool, means for driving the bonding tool, means for detecting an amount of crushing of a bonding portion during bonding, means for calculating a rate of change of the amount of crushing detected by the amount-of-crushing detecting means, means for setting a target value, which is inputted from an external source, of the amount of crushing of the bonding portion, and means for controlling the driving means. When the rate of change of the amount of crushing calculated by the calculating means is smaller than a predetermined value, the controlling means compares the amount of crushing detected by the amount-of-crushing detecting means with the target value. When the amount of crushing detected by the amount-of-crushing detecting means is smaller than the target value, the controlling means discriminates that the bonding is being performed in a satisfactory manner and hence should be continued.
摘要翻译: 一种接合装置,包括接合工具,用于驱动接合工具的装置,用于在接合期间检测接合部分的破碎量的装置,用于计算通过粉碎量检测检测到的破碎量的变化率的装置 装置,用于设定从外部源输入的目标值的装置,以及用于控制驱动装置的装置。 当由计算装置计算的破碎量的变化率小于预定值时,控制装置将由破碎量检测装置检测的破碎量与目标值进行比较。 当由破碎量检测装置检测到的破碎量小于目标值时,控制装置以令人满意的方式鉴别出正在进行接合,因此应继续进行。
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公开(公告)号:US4809058A
公开(公告)日:1989-02-28
申请号:US941812
申请日:1986-12-15
申请人: Takao Funamoto , Ryoichi Kajiwara , Mituo Katou , Takeshi Matsuzaka , Tomohiko Shida , Hiroshi Wachi , Kazuya Takahashi , Masatoshi Watanabe , Minoru Yamada , Keiichirou Nakanishi , Katuo Sugawara
发明人: Takao Funamoto , Ryoichi Kajiwara , Mituo Katou , Takeshi Matsuzaka , Tomohiko Shida , Hiroshi Wachi , Kazuya Takahashi , Masatoshi Watanabe , Minoru Yamada , Keiichirou Nakanishi , Katuo Sugawara
IPC分类号: H01L23/473 , H01L23/538 , H05K1/02 , H05K1/03 , H05K7/20 , H01L23/02 , H01L25/04 , H01L39/02
CPC分类号: H05K1/0373 , H01L23/473 , H01L23/5383 , H01L23/5385 , H05K1/0272 , H01L2924/0002 , H05K2201/0209 , H05K2201/0251 , H05K2201/064
摘要: An integrated circuit device comprising a wiring substrate on one surface of which integrated circuit chips are mounted, a power source substrate of a laminated structure provided in contact with the other surface of the wiring substrate and formed by alternately laminating a plurality of feeding conductor layers of a heat conductive metal and a plurality of electrically insulating layers of an electrically insulating material, and bonding together the laminated layers, a means for electrically connecting the wiring substrate and the power source substrate to each other, and a heat radiating means inserted in at least either the feeding conductor layers or the electrically insulating layers and adapted to radiate the heat, which occurs in the power source substrate, to the outside thereof. This integrated circuit device has a power source substrate of a remarkably high heat radiating efficiency, and is suitably used as an integrated circuit device having integrated circuit chips mounted with a high density on a wiring substrate therein.
摘要翻译: 一种集成电路装置,其特征在于,在其一面上安装有集成电路芯片的布线基板,与所述布线基板的另一面接触而形成的叠层结构的电源基板,通过交替层叠多个馈电导体层 导电金属和多个电绝缘材料的电绝缘层,并且将层叠层结合在一起;将布线基板和电源基板彼此电连接的装置,以及至少插入至少 馈电导体层或电绝缘层,并且适于将发生在电源基板中的热辐射到其外部。 该集成电路装置具有显着高的散热效率的电源基板,并且适合用作集成电路装置,其中集成电路芯片以高密度安装在其布线基板上。
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公开(公告)号:US08455986B2
公开(公告)日:2013-06-04
申请号:US13459839
申请日:2012-04-30
申请人: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
发明人: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
IPC分类号: H01L23/495
CPC分类号: H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012
摘要: A semiconductor device featuring a semiconductor chip having a first main surface and a second, opposing main surface and including a MOSFET having source and gate electrodes formed on the first main surface and a drain electrode thereof formed on the second main surface, first and second conductive members acting as lead terminals for the source and gate electrodes, respectively, are disposed over the first main surface, each of the first and second conductive members has a part overlapped with the chip in a plan view, a sealing body sealing the chip and parts of the first and second conductive members such that a part of the first conductive member is projected outwardly from a first side surface of the sealing body and parts of the first and second conductive members are projected outwardly from the opposing second side surface of the sealing body in a plan view.
摘要翻译: 一种具有半导体芯片的半导体器件,具有第一主表面和第二相对的主表面,并且包括形成在第一主表面上的源极和栅电极的MOSFET,以及形成在第二主表面上的漏电极,第一和第二导电 作为源电极和栅电极的引线端子的部件分别设置在第一主表面上,第一和第二导电部件中的每一个在平面图中与芯片重叠,密封体密封芯片和部件 的第一和第二导电构件,使得第一导电构件的一部分从密封体的第一侧表面向外突出,并且第一和第二导电构件的部分从密封体的相对的第二侧表面向外突出 在平面图中。
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5.Flip chip assembly structure for semiconductor device and method of assembling therefor 失效
标题翻译: 用于半导体器件的倒装芯片组装结构及其组装方法公开(公告)号:US06798072B2
公开(公告)日:2004-09-28
申请号:US09793439
申请日:2001-02-27
申请人: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Asao Nishimura , Masayoshi Shinoda
发明人: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Asao Nishimura , Masayoshi Shinoda
IPC分类号: H01L2348
CPC分类号: H01L24/81 , H01L21/563 , H01L23/295 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/31 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/75 , H01L2224/05568 , H01L2224/05573 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13144 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/29082 , H01L2224/29111 , H01L2224/2929 , H01L2224/293 , H01L2224/29386 , H01L2224/29499 , H01L2224/32145 , H01L2224/32225 , H01L2224/325 , H01L2224/45144 , H01L2224/48227 , H01L2224/48471 , H01L2224/48479 , H01L2224/48644 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/75 , H01L2224/75314 , H01L2224/75745 , H01L2224/75753 , H01L2224/81191 , H01L2224/81205 , H01L2224/81409 , H01L2224/81801 , H01L2224/83101 , H01L2224/83192 , H01L2224/83193 , H01L2224/83851 , H01L2224/85051 , H01L2224/85444 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/07811 , H01L2924/10253 , H01L2924/12041 , H01L2924/15151 , H01L2924/15153 , H01L2924/15165 , H01L2924/15311 , H01L2924/15787 , H01L2924/1579 , H01L2924/181 , H01L2924/18161 , H01L2924/19105 , H01L2924/30107 , H01L2924/351 , H01L2924/00 , H01L2924/3512 , H01L2924/05442 , H01L2924/0665 , H01L2924/00012 , H01L2224/05624 , H01L2224/4554
摘要: A semiconductor device includes a semiconductor chip and a printed circuit board. Metal electrodes of the semiconductor chip and the internal connection terminals of the printed circuit board are electrically connected through the metallic joining via precious metal bumps. A melting point of a metal material constituting each of the metallic joining parts is equal to or higher than 275 degrees, and a space defined between the chip and the board is filled with resin (under fill) containing 50 vol % or more inorganic fillers.
摘要翻译: 半导体器件包括半导体芯片和印刷电路板。 半导体芯片的金属电极和印刷电路板的内部连接端子通过金属接合通过贵金属凸块电连接。 构成每个金属接合部件的金属材料的熔点等于或高于275度,并且在芯片和板之间限定的空间填充含有50体积%以上无机填料的树脂(填充物)。
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公开(公告)号:US07394146B2
公开(公告)日:2008-07-01
申请号:US11589849
申请日:2006-10-31
申请人: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
发明人: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
IPC分类号: H01L23/495 , H01L21/00 , H01R9/00
CPC分类号: H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012
摘要: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.
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公开(公告)号:US07332757B2
公开(公告)日:2008-02-19
申请号:US11415291
申请日:2006-05-02
申请人: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
发明人: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
CPC分类号: H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012
摘要: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.
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公开(公告)号:US20070040249A1
公开(公告)日:2007-02-22
申请号:US11589849
申请日:2006-10-31
申请人: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
发明人: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
IPC分类号: H01L23/495
CPC分类号: H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012
摘要: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.
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公开(公告)号:US06774466B1
公开(公告)日:2004-08-10
申请号:US09493080
申请日:2000-01-28
申请人: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
发明人: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
IPC分类号: H10L23495
CPC分类号: H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012
摘要: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.
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公开(公告)号:US5884835A
公开(公告)日:1999-03-23
申请号:US686538
申请日:1996-07-26
申请人: Ryoichi Kajiwara , Toshiyuki Takahashi , Kazuya Takahashi , Masahiro Koizumi , Hiroshi Watanabe , Yukiharu Akiyama
发明人: Ryoichi Kajiwara , Toshiyuki Takahashi , Kazuya Takahashi , Masahiro Koizumi , Hiroshi Watanabe , Yukiharu Akiyama
IPC分类号: H01L21/607 , B23K20/00 , H01L21/60
CPC分类号: H01L24/85 , B23K20/007 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05624 , H01L2224/45015 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/78301 , H01L2224/85099 , H01L2224/85205 , H01L24/45 , H01L24/78 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/20303 , H01L2924/20304 , H01L2924/20305 , H01L2924/20306 , H01L2924/20307 , H01L2924/20308 , H01L2924/20753
摘要: In a case of ultrasonic bonding of a bonding wire to a metal pad provided on a semiconductor substrate, the vibration amplitude of a tip end of the bonding tool is set to be smaller than the film thickness of the metal pad, and the vibration frequency of the bonding tool is set to be higher than 70 kHz. According physical damage, such as cracks produced in a portion beneath the metal pad, can be prevented.
摘要翻译: 在将接合线超声波接合到设置在半导体基板上的金属焊盘的情况下,将接合工具的前端的振动振幅设定为小于金属焊盘的膜厚,振动频率 接合工具设定为高于70kHz。 可以防止物理损坏,例如在金属垫下面的部分产生的裂纹。
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