公开(公告)号：US20070166994A1

公开(公告)日：2007-07-19

申请号：US11657000

申请日：2007-01-23

申请人： Sung Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

发明人： Sung Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

IPC分类号： H01L21/44 ,  H01L29/40

CPC分类号： H01L24/11 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3463

摘要： In using Ni(P) and Sn-rich solders in Pb free interconnections, the prevention and control of the formation of intermetallic compound inclusions, can be achieved through a reaction preventive or control layer that is positioned on top of an electroless Ni(P) metallization, such as by application of a thin layer of Sn on the Ni(P) or through the application of a thin layer of Cu on the Ni(P

摘要翻译： 在无铅互连中使用Ni（P）和富含Sn的焊料，可以通过位于无电Ni（P）的顶部的反应预防或控制层来实现金属间化合物夹杂物形成的预防和控制， 例如通过在Ni（P）上施加Sn的薄层，或者通过在Ni（P）上施加薄层的Cu，

公开(公告)号：US20060024943A1

公开(公告)日：2006-02-02

申请号：US10903365

申请日：2004-07-30

申请人： Sung Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

发明人： Sung Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3463

摘要： In using Ni(P) and Sn-rich solders in Pb free interconnections, the prevention and control of the formation of intermetallic compound inclusions, can be achieved through a reaction preventive or control layer that is positioned on top of an electroless Ni(P) metallization, such as by application of a thin layer of Sn on the Ni(P) or through the application of a thin layer of Cu on the Ni(P

摘要翻译： 在无铅互连中使用Ni（P）和富含Sn的焊料，可以通过位于无电Ni（P）的顶部的反应预防或控制层来实现金属间化合物夹杂物形成的预防和控制， 例如通过在Ni（P）上施加Sn的薄层，或者通过在Ni（P）上施加薄层的Cu，

公开(公告)号：US20080293243A1

公开(公告)日：2008-11-27

申请号：US12173803

申请日：2008-07-15

申请人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

发明人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3463

摘要： In using Ni(P) and Sn-rich solders in Pb free interconnections, the prevention and control of the formation of intermetallic compound inclusions, can be achieved through a reaction preventive or control layer that is positioned on top of an electroless Ni(P) metallization, such as by application of a thin layer of Sn on the Ni(P) or through the application of a thin layer of Cu on the Ni(P

摘要翻译： 在无铅互连中使用Ni（P）和富含Sn的焊料，可以通过位于无电Ni（P）的顶部的反应预防或控制层来实现金属间化合物夹杂物形成的预防和控制， 例如通过在Ni（P）上施加Sn的薄层，或者通过在Ni（P）上施加薄层的Cu，

公开(公告)号：US08691685B2

公开(公告)日：2014-04-08

申请号：US11657000

申请日：2007-01-23

申请人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

发明人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3463

摘要： In using Ni(P) and Sn-rich solders in Pb free interconnections, the prevention and control of the formation of intermetallic compound inclusions can be achieved through a reaction-preventative or control layer that is positioned on top of an electroless Ni(P) metallization, such as by application of a thin layer of Sn on the Ni(P) or through the application of a thin layer of Cu on the Ni(P).

摘要翻译： 在无铅互连中使用Ni（P）和富Sn焊料时，可以通过位于无电Ni（P）的顶部的反应预防或控制层来实现金属间化合物夹杂物形成的预防和控制， 金属化，例如通过在Ni（P）上施加薄层的Sn或通过在Ni（P）上施加薄的Cu层）。

公开(公告)号：US08679964B2

公开(公告)日：2014-03-25

申请号：US12173803

申请日：2008-07-15

申请人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

发明人： Sung Kwon Kang ,  Da-Yuan Shih ,  Yoon-Chul Son

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3463

摘要： In using Ni(P) and Sn-rich solders in Pb free interconnections, the prevention and control of the formation of intermetallic compound inclusions, can be achieved through a reaction preventive or control layer that is positioned on top of an electroless Ni(P) metallization, such as by application of a thin layer of Sn on the Ni(P) or through the application of a thin layer of Cu on the Ni(P).

摘要翻译： 在无铅互连中使用Ni（P）和富含Sn的焊料，可以通过位于无电Ni（P）的顶部的反应预防或控制层来实现金属间化合物夹杂物形成的预防和控制， 金属化，例如通过在Ni（P）上施加薄层的Sn或通过在Ni（P）上施加薄的Cu层）。

公开(公告)号：US20060104031A1

公开(公告)日：2006-05-18

申请号：US10904555

申请日：2004-11-16

申请人： Evan Colgan ,  Frank Pompeo ,  Glenn Daves ,  Hilton Toy ,  Bruce Furman ,  David Edwards ,  Michael Gaynes ,  Mukta Farooq ,  Sung Kang ,  Steven Ostrander ,  Jaimal Williamson ,  Da-Yuan Shih ,  Donald Henderson

发明人： Evan Colgan ,  Frank Pompeo ,  Glenn Daves ,  Hilton Toy ,  Bruce Furman ,  David Edwards ,  Michael Gaynes ,  Mukta Farooq ,  Sung Kang ,  Steven Ostrander ,  Jaimal Williamson ,  Da-Yuan Shih ,  Donald Henderson

IPC分类号： H05K7/20

CPC分类号： H01L23/4735 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2224/0401

摘要： A cooling system for an electronic component on a component carrier is provided. The system includes a frame, a spray manifold, and a sealing member. The frame has an opening and is connectable to the component carrier so that an annular area is defined between the opening and the electronic component. The spray manifold is sealed over the opening to define a spray area over a back surface of the electronic component. The spray manifold sprays a cooling fluid on the back surface. The sealing member seals the annular region so that input/output connectors on the component carrier are isolated from the cooling fluid.

摘要翻译： 提供了一种用于组件载体上的电子部件的冷却系统。 该系统包括框架，喷雾歧管和密封构件。 框架具有开口并且可连接到部件载体，使得在开口和电子部件之间限定环形区域。 喷雾歧管被密封在开口上以限定电子部件的后表面上方的喷射区域。 喷雾歧管在后表面喷洒冷却液。 密封构件密封环形区域，使得部件载体上的输入/输出连接器与冷却流体隔离。

公开(公告)号：US20060118604A1

公开(公告)日：2006-06-08

申请号：US11005557

申请日：2004-12-05

申请人： Stephen Buchwalter ,  Claudius Feger ,  Peter Gruber ,  Sung Kang ,  Paul Lauro ,  Da-Yuan Shih

发明人： Stephen Buchwalter ,  Claudius Feger ,  Peter Gruber ,  Sung Kang ,  Paul Lauro ,  Da-Yuan Shih

IPC分类号： B23K35/12

CPC分类号： H05K3/3436 ,  B23K35/26 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13176 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K3/3426 ,  H05K3/3468 ,  H05K2201/10287 ,  H05K2201/10992 ,  H05K2203/0113 ,  H05K2203/0415 ,  H05K2203/128 ,  Y02P70/613 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Improved interconnects are produced by injection molded solder which fills mold arrays with molten solder so that columns that have much greater height to width aspect ratios greater than one are formed, rather than conventional flip chip bumps. The columns may have filler particles or reinforcing conductors therein. In the interconnect structures produced, the cost and time of a subsequent underfill step is reduced or avoided. The problem of incompatibility with optical interconnects between chips because underfills require high loading of silica fillers which scatter light, is solved, thus allowing flip chips to incorporate optical interconnects.

公开(公告)号：US20050224966A1

公开(公告)日：2005-10-13

申请号：US10815103

申请日：2004-03-31

申请人： Keith Fogel ,  Balaram Ghosal ,  Sung Kang ,  Stephen Kilpatrick ,  Paul Lauro ,  Henry Nye ,  Da-Yuan Shih ,  Donna Zupanski-Nielsen

发明人： Keith Fogel ,  Balaram Ghosal ,  Sung Kang ,  Stephen Kilpatrick ,  Paul Lauro ,  Henry Nye ,  Da-Yuan Shih ,  Donna Zupanski-Nielsen

IPC分类号： H01L21/60 ,  H01L23/48 ,  H01L23/485 ,  H05K3/34

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限球组合物，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US09230932B2

公开(公告)日：2016-01-05

申请号：US13370127

申请日：2012-02-09

申请人： Chen-Hua Yu ,  Da-Yuan Shih

发明人： Chen-Hua Yu ,  Da-Yuan Shih

IPC分类号： H01L23/544 ,  H01L23/48 ,  H01L23/00

CPC分类号： H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/45 ,  H01L24/49 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/05012 ,  H01L2224/05013 ,  H01L2224/05014 ,  H01L2224/05015 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05583 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/1131 ,  H01L2224/1134 ,  H01L2224/114 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1161 ,  H01L2224/11616 ,  H01L2224/11825 ,  H01L2224/11849 ,  H01L2224/13011 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/13076 ,  H01L2224/13078 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/13671 ,  H01L2224/13672 ,  H01L2224/1601 ,  H01L2224/16237 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2924/15787 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2224/10125 ,  H01L2224/10155 ,  H01L2924/00

摘要： A system and method for preventing cracks is provided. An embodiment comprises placing crack stoppers into a connection between a semiconductor die and a substrate. The crack stoppers may be in the shape of hollow or solid cylinders and may be placed so as to prevent any cracks from propagating through the crack stoppers.

摘要翻译： 提供一种用于防止裂纹的系统和方法。 一个实施例包括将裂缝塞子放置在半导体管芯和衬底之间的连接中。 裂缝止动器可以是中空或实心圆筒的形状，并且可以放置成防止任何裂纹通过裂缝塞子传播。

公开(公告)号：US08476773B2

公开(公告)日：2013-07-02

申请号：US12787485

申请日：2010-05-26

申请人： Stephen Leslie Buchwalter ,  Bruce K. Furman ,  Peter A. Gruber ,  Jae-Woong Nah ,  Da-Yuan Shih

发明人： Stephen Leslie Buchwalter ,  Bruce K. Furman ,  Peter A. Gruber ,  Jae-Woong Nah ,  Da-Yuan Shih

IPC分类号： H01L23/52

CPC分类号： H01L24/16 ,  H01L21/563 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/12 ,  H01L24/27 ,  H01L24/28 ,  H01L24/31 ,  H01L24/73 ,  H01L24/81 ,  H01L24/94 ,  H01L2221/68377 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/1131 ,  H01L2224/11334 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/11822 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/17051 ,  H01L2224/274 ,  H01L2224/29111 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K3/3436 ,  H05K2201/0379 ,  H05K2201/094 ,  H05K2201/10234 ,  H05K2201/10242 ,  H05K2201/10977 ,  Y02P70/613 ,  Y10T29/49165 ,  H01L2224/45111 ,  H01L2924/01047 ,  H01L2224/13099 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： An electrical structure including a first substrate comprising a first electrically conductive pad, a second substrate comprising a second electrically conductive pad, and an interconnect structure electrically and mechanically connecting the first electrically conductive pad to the second electrically conductive pad. The interconnect structure comprises a non-solder metallic core structure, a first solder structure, and a second solder structure. The first solder structure electrically and mechanically connects a first portion of the non-solder metallic core structure to the first electrically conductive pad. The second solder structure electrically and mechanically connects a second portion of the non-solder metallic core structure to the second electrically conductive pad.

摘要翻译： 一种电结构，包括包括第一导电焊盘的第一基板，包括第二导电焊盘的第二基板和将第一导电焊盘电连接和机械连接到第二导电焊盘的互连结构。 互连结构包括非焊料金属芯结构，第一焊料结构和第二焊料结构。 第一焊料结构将非焊料金属芯结构的第一部分电连接并机械地连接到第一导电焊盘。 第二焊料结构将非焊料金属芯结构的第二部分电连接并机械连接到第二导电焊盘。