Dual-sided film-assist molding process
    1.
    发明授权
    Dual-sided film-assist molding process 有权
    双面膜辅助成型工艺

    公开(公告)号:US09076802B1

    公开(公告)日:2015-07-07

    申请号:US14037320

    申请日:2013-09-25

    IPC分类号: H01L23/28 H01L21/00 H01L21/56

    摘要: Simultaneous semiconductor packages can be produced using a dual-sided film-assist molding process. The process involves using a film or membrane having opposing surfaces for receiving un-encapsulated semiconductor packages on both surfaces. A slot can be formed in the film or membrane to facilitate introduction and passage of the encapsulation therethrough such that upon removal of the film or membrane, increased throughput and productivity of the completed semiconductor packages can be carried out to achieve considerable cost savings.

    摘要翻译: 可以使用双面胶片辅助成型工艺制造同时半导体封装。 该方法涉及使用具有相对表面的膜或膜来在两个表面上接收未封装的半导体封装。 可以在膜或膜中形成狭槽以便于通过其中的封装的引入和通过,使得在去除膜或膜时,可以进行完成的半导体封装的增加的生产率和生产率以实现显着的成本节约。

    INTEGRATED CIRCUIT PACKAGING SYSTEM WITH DIELECTRIC SUPPORT AND METHOD OF MANUFACTURE THEREOF
    6.
    发明申请
    INTEGRATED CIRCUIT PACKAGING SYSTEM WITH DIELECTRIC SUPPORT AND METHOD OF MANUFACTURE THEREOF 有权
    具有电介质支持的集成电路包装系统及其制造方法

    公开(公告)号:US20120146246A1

    公开(公告)日:2012-06-14

    申请号:US12964577

    申请日:2010-12-09

    IPC分类号: H01L23/12 H01L21/52

    摘要: A method of manufacture of an integrated circuit packaging system includes: providing a package substrate having an outer pad at a substrate top side; forming a resist layer directly on the substrate top side, the resist layer having a resist top side with a channel array adjacent the outer pad exposed from the resist layer; mounting an integrated circuit having an active side facing the resist top side, the integrated circuit having a non-horizontal side adjacent the outer pad; and forming a dielectric between the active side and the resist top side, the dielectric having a fillet extended from the non-horizontal side to the substrate top side inside an inner extent of the channel array.

    摘要翻译: 一种集成电路封装系统的制造方法,包括:在基板顶侧提供具有外焊盘的封装基板; 在基板顶侧直接形成抗蚀剂层,抗蚀剂层具有邻近从抗蚀剂层暴露的外焊盘的沟道阵列的抗蚀剂顶侧; 安装具有面向抗蚀剂顶侧的有效侧的集成电路,所述集成电路具有与所述外部焊盘相邻的非水平侧; 并且在活性侧和抗蚀剂顶侧之间形成电介质,电介质具有在通道阵列的内部范围内从非水平侧延伸到衬底顶侧的圆角。