公开(公告)号：US20160032450A1

公开(公告)日：2016-02-04

申请号：US14779488

申请日：2014-02-25

Applicant: NEOCOAT SA

Inventor： David Rats ,  Christophe Provent

IPC: C23C16/27 ,  B81C1/00 ,  H01L21/02 ,  H01J37/32 ,  C01B31/06

CPC classification number: C23C16/274 ,  B81C1/00373 ,  C01B32/25 ,  C23C16/045 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32293 ,  H01J37/32403 ,  H01J37/32678 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01L21/02115 ,  H01L21/02274

Abstract: The present invention relates to a method for depositing nanocrystalline diamond using a diamond vapor deposition facility which includes: a vacuum reactor including a reaction chamber connected to a vacuum source; a plurality of plasma sources arranged along a matrix that is at least two-dimensional in the reaction chamber; and a substrate holder arranged in the reactor, said method being characterized in that the deposition is carried out at a temperature of 100 to 500° C.

Abstract translation: 本发明涉及使用金刚石气相沉积设备沉积纳米晶金刚石的方法，该方法包括：真空反应器，包括连接到真空源的反应室; 沿反应室中至少二维的矩阵排列的多个等离子体源; 以及布置在反应器中的衬底保持器，所述方法的特征在于沉积在100-500℃的温度下进行。

公开(公告)号：US09252037B2

公开(公告)日：2016-02-02

申请号：US13997801

申请日：2011-12-27

Applicant: Bart Scholte Von Mast ,  Wolfgang Rietzler ,  Rogier Lodder ,  Rolf Bazlen ,  Daniel Rohrer

Inventor： Bart Scholte Von Mast ,  Wolfgang Rietzler ,  Rogier Lodder ,  Rolf Bazlen ,  Daniel Rohrer

IPC: H01L21/677 ,  H01L21/67

CPC classification number: C23C16/458 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4412 ,  C23C16/52 ,  F04B45/02 ,  H01J37/32724 ,  H01J37/32834 ,  H01J2237/3321 ,  H01L21/6719 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/6776

Abstract: A vacuum treatment apparatus and method for manufacturing has a plurality of treatment chambers for treating workpieces, in particular silicon wafers, a transfer chamber attached to the treatment chambers communicating via respective openings and having handling zones located adjacent to each of the treatment chambers. A workpiece carrier is arranged within the transfer chamber and configured to transfer the workpieces between the handling zones, and one or more handlers for moving the workpieces between the handling zones and the treatment chambers. The transfer chamber is ring-shaped about an axis and the openings have opening substantially parallel thereto. This way, forces on the transfer chamber are redirected to a large support structure and thus, a cost-effective, light and still rigid mechanical construction can be achieved.

Abstract translation: 真空处理装置和制造方法具有多个用于处理工件，特别是硅晶片的处理室，附接到经由各个开口连通的处理室的传送室，并且具有位于每个处理室附近的处理区域。 工件载体布置在传送室内并且构造成在处理区域之间传送工件，以及用于在处理区域和处理室之间移动工件的一个或多个处理器。 传送室围绕轴线是环形的并且开口具有基本上与其平行的开口。 这样，转移室上的力被重定向到大的支撑结构，因此，可以实现成本有效，轻且刚性的机械结构。

公开(公告)号：US20160020134A1

公开(公告)日：2016-01-21

申请号：US14752245

申请日：2015-06-26

Applicant: APPLIED MATERIALS, INC.

Inventor： SRISKANTHARAJAH THIRUNAVUKARASU ,  KIRANKUMAR SAVANDAIAH ,  CHENG-HSIUNG TSAI ,  KAI LIANG LIEW

IPC: H01L21/687 ,  H01L21/02 ,  C23C14/50 ,  C23C16/50 ,  C23C16/455 ,  C23C16/458 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01L21/67069 ,  C23C14/50 ,  C23C16/458 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32577 ,  H01J37/3405 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/306 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68742 ,  H01L21/68757

Abstract: Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, an apparatus for processing a substrate includes: a substrate support having a substrate supporting surface including an electrically insulating coating; a substrate lift mechanism including a plurality of lift pins configured to move between a first position disposed beneath the substrate supporting surface and a second position disposed above the substrate supporting surface; and a connector configured to selectively provide an electrical connection between the substrate support and the substrate lift mechanism before the plurality of lift pins reach a plane of the substrate supporting surface.

Abstract translation: 本文公开了用于处理基底的方法和装置。 在一些实施例中，用于处理衬底的设备包括：衬底支撑件，其具有包括电绝缘涂层的衬底支撑表面; 基板升降机构，其包括多个提升销，所述多个提升销构造成在布置在所述基板支撑表面下方的第一位置和设置在所述基板支撑表面之上的第二位置之间移动 以及连接器，被配置为在所述多个提升销到达所述基板支撑表面的平面之前，选择性地在所述基板支撑件和所述基板升降机构之间提供电连接。

公开(公告)号：US20160013023A1

公开(公告)日：2016-01-14

申请号：US14862722

申请日：2015-09-23

Applicant: BROTHER KOGYO KABUSHIKI KAISHA ,  NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY

Inventor： Kazunari TAKI ,  Kentaro SHINODA ,  Hideki KANADA ,  Hiroyuki KOUSAKA ,  Yasuyuki TAKAOKA

IPC: H01J37/32 ,  C23C16/511 ,  C23C16/52 ,  C23C16/26

CPC classification number: H01J37/32293 ,  C23C16/26 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32266 ,  H01J2237/3321 ,  H05H1/46 ,  H05H2001/463

Abstract: A film forming device includes: a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece; a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, and a controller configured to control the microwave supplying unit and the negative voltage applying unit, wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer, wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes

Abstract translation: 一种成膜装置，包括：微波供应单元，被配置为沿导电工件的处理表面供应用于产生等离子体的微波; 负电压施加单元，被配置为向工件施加用于沿着工件的处理表面扩展鞘层厚度的负偏压，以及控制器，其被配置为控制微波供给单元和负电压施加单元，其中，微波供应 单元具有微波传输窗口，其被配置为将所提供的微波传播到扩展的鞘层，其中控制器被配置为在供应微波的同时控制微波供应单元和负电压施加单元，使得鞘层的护套厚度改变

公开(公告)号：US09200368B2

公开(公告)日：2015-12-01

申请号：US13207227

申请日：2011-08-10

Applicant: Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

Inventor： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/509 ,  H01J37/32

CPC classification number: H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

Abstract translation: 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US09142389B2

公开(公告)日：2015-09-22

申请号：US13994826

申请日：2011-12-14

Applicant: Christopher John Howard Wort ,  John Robert Brandon

Inventor： Christopher John Howard Wort ,  John Robert Brandon

IPC: H01J37/32 ,  C23C16/27 ,  C23C16/511 ,  C23C16/54 ,  H01P5/20 ,  H01P5/22

CPC classification number: H01J37/32229 ,  C23C16/274 ,  C23C16/511 ,  C23C16/54 ,  H01J37/32192 ,  H01J37/32256 ,  H01J37/32266 ,  H01J2237/3321 ,  H01P5/20 ,  H01P5/222

Abstract: A microwave power delivery system for supplying microwave power to a plurality of microwave plasma reactors (8), the microwave power delivery system comprising: a tuner (14) configured to be coupled to a microwave source (4) and configured to match impedance of the plurality of microwave plasma reactors to that of the microwave source; and a waveguide junction (18) coupled to the tuner and configured to guide microwaves to and from the plurality of microwave plasma reactors, wherein the waveguide junction comprises four waveguide ports including a first port coupled to the tuner, second and third ports configured to be coupled to respective microwave plasma reactors, and a fourth port coupled to a microwave sink (20), wherein the waveguide junction is configured to evenly split microwave power input from the tuner through the first port between the second and third ports for providing microwave power to respective microwave plasma reactors, wherein the waveguide junction is configured to decouple the second and third ports thereby preventing any reflected microwaves from one of the microwave plasma reactors from feeding across the waveguide junction directly into another microwave plasma reactor causing an imbalance, wherein the waveguide junction is further configured to feed reflected microwaves received back through the second and third ports which are balanced in terms of magnitude and phase to the tuner such that they can be reflected by the tuner and re-used, and wherein the waveguide junction is further configured to feed excess reflected power which is not balanced through the fourth port into the microwave sink.

Abstract translation: 一种用于向多个微波等离子体反应器（8）提供微波功率的微波功率输送系统，所述微波功率输送系统包括：调谐器（14），其被配置为耦合到微波源（4）并且被配置为使所述微波功率输出系统 多个微波等离子体反应器; 以及波导结（18），其耦合到所述调谐器并且被配置为向所述多个微波等离子体反应器引导微波，其中所述波导结包括四个波导端口，所述波导端口包括耦合到所述调谐器的第一端口，所述第二端口和所述第三端口被配置为 耦合到相应的微波等离子体反应器，以及耦合到微波吸收器（20）的第四端口，其中所述波导结被配置为将从所述调谐器输入的微波功率均匀地分开通过所述第二和第三端口之间的第一端口，以提供微波功率 相应的微波等离子体反应器，其中波导结被配置为使第二和第三端口去耦，从而防止来自微波等离子体反应器之一的任何反射的微波直接通过波导接头进入另一个引起不平衡的微波等离子体反应器，其中波导结 进一步构造成供给反向收回的反射的微波 gh第二和第三端口，其在幅度和相位方面与调谐器平衡，使得它们可以被调谐器反射并重新使用，并且其中波导结还被配置为馈送不平衡的多余的反射功率 第四口进入微波槽。

公开(公告)号：US20150235814A1

公开(公告)日：2015-08-20

申请号：US14699249

申请日：2015-04-29

Applicant: Asahi Glass Company, Limited

Inventor： Hirotomo Kawahara ,  Nobutaka Aomine ,  Kazunobu Maeshige ,  Yuki Aoshima ,  Hiroshi Hanekawa

IPC: H01J37/32 ,  C23C16/50

CPC classification number: H01J37/32568 ,  C23C16/402 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32577 ,  H01J2237/3321 ,  H05H1/46 ,  H05H2001/4675 ,  H05H2001/4682

Abstract: A plasma source for a plasma CVD apparatus that includes an electrode group including four electrodes, which are a first electrode, a second electrode, a third electrode and a fourth electrode arranged in a row. The electrode group is connected to at least one AC power supply. A voltage supplied to two of the four electrodes is shifted in phase from a voltage supplied to the remaining two electrodes. A space to which a source gas is supplied is provided between the adjacent electrodes, and voltages applied to at least one set among the adjacent two electrodes are in the same phase.

Abstract translation: 一种用于等离子体CVD装置的等离子体源，其包括包括四个电极的电极组，所述四个电极是排列成一行的第一电极，第二电极，第三电极和第四电极。 电极组连接至少一个交流电源。 提供给四个电极中的两个的电压从提供给剩余的两个电极的电压相位偏移。 供给源气体的空间设置在相邻的电极之间，施加到相邻的两个电极中的至少一个电极的电压处于相同的相位。

公开(公告)号：US20150221479A1

公开(公告)日：2015-08-06

申请号：US14603638

申请日：2015-01-23

Applicant: Applied Materials, Inc.

Inventor： Xinglong CHEN ,  Saurabh GARG ,  Jang-Gyoo YANG

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/44 ,  C23C16/505

CPC classification number: H01J37/32422 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/517 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32495 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31691 ,  H01L21/67017 ,  H01L21/67069 ,  H01L22/26 ,  H01L27/11502 ,  H01L28/55 ,  H01L43/12

Abstract: Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.

Abstract translation: 本公开的实施例一般涉及一种混合等离子体处理系统，其包括具有用于衬底处理的电容耦合等离子体（CCP）单元的远程等离子体源（RPS）单元。 在一个实施例中，混合等离子体处理系统包括CCP单元，其包括具有一个或多个通孔的盖子和离子抑制元件，其中盖子和离子抑制元件限定等离子体激发区域，RPS单元耦合到 CCP单元和设置在离子抑制元件和基板支撑件之间的气体分配板，其中气体分配板和基板支撑件限定基板处理区域。 在过程需要更高功率的情况下，CCP和RPS单元都可用于产生等离子体激发的物质，以使一些功率负载从CCP单元转移到RPS单元，这允许CCP单元以较低的功率工作。

公开(公告)号：US20150214010A1

公开(公告)日：2015-07-30

申请号：US14430219

申请日：2013-09-25

Applicant: Char Lie HONG ,  Man Ho LEE ,  BMC CO., LTD.

Inventor： Charlie Hong ,  Man Ho Lee

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/54 ,  C23C16/44 ,  C23C16/503 ,  C23C16/52

CPC classification number: H01J37/3266 ,  C23C14/35 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/458 ,  C23C16/50 ,  C23C16/503 ,  C23C16/52 ,  C23C16/545 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32816 ,  H01J2237/3321

Abstract: A plasma enhanced chemical vapor deposition apparatus is disclosed. The plasma enhanced chemical vapor deposition apparatus includes a pair of magnetic field generating unit arranged to face each other with a gap therebetween; a pair of facing electrodes arranged to face each other between the pair of magnetic field generating units; a gas supply unit configured to supply a reaction gas into a space between the pair of facing electrodes; and a precursor supply unit configured to supply a precursor into the space between the pair of facing electrodes. A facing magnetic field may be formed between the pair of magnetic field generating units.

Abstract translation: 公开了一种等离子体增强化学气相沉积装置。 等离子体增强化学气相沉积装置包括一对磁场产生单元，它们被布置成彼此面对并具有间隙; 一对面对电极，其布置成在所述一对磁场产生单元之间彼此面对; 气体供给单元，其构造成将反应气体供给到所述一对面对电极之间的空间中; 以及前体供给单元，其构造成将前体供给到所述一对相对电极之间的空间中。 可以在该对磁场产生单元之间形成面对的磁场。

公开(公告)号：US20150206719A1

公开(公告)日：2015-07-23

申请号：US14607997

申请日：2015-01-28

Applicant: Novellus Systems, Inc.

Inventor： Shankar Swaminathan ,  Jon Henri ,  Dennis Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi Kattige ,  Bart van Schravendijk ,  Andrew J. McKerrow

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/44 ,  C23C16/52

CPC classification number: H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

Abstract translation: 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。