Apparatus and Method for Centering Substrates on a Chuck
    21.
    发明申请
    Apparatus and Method for Centering Substrates on a Chuck 有权
    用于将基板对准卡盘的装置和方法

    公开(公告)号:US20150235881A1

    公开(公告)日:2015-08-20

    申请号:US14183631

    申请日:2014-02-19

    Abstract: An apparatus and method for centering substrates determining on a chuck. The apparatus includes a chuck in a process chamber, the chuck configured to removeably hold a substrate for processing; an array of two or more ultrasonic sensors arranged in the process chamber, each ultrasonic sensor arranged relative to the chuck so as to send a respective ultrasonic sound wave to a respective preselected region of the substrate and receive a respective return ultrasonic sound wave from the preselected region of the substrate; and a controller connected to each ultrasonic sensor and configured to compare a measured position of the substrate on the chuck to a specified placement of the substrate on the chuck based on a measured elapsed time between sending the ultrasonic sound wave and receiving the return ultrasonic sound wave from each ultrasonic sensor.

    Abstract translation: 一种用于使确定在卡盘上的基板居中的装置和方法。 该装置包括处理室中的卡盘,卡盘构造成可移除地保持用于处理的基板; 布置在处理室中的两个或更多个超声波传感器的阵列,每个超声波传感器相对于卡盘布置,以便将相应的超声波发送到基板的各个预选区域,并从预选的接收相应的返回超声波 基底区域; 以及控制器,其连接到每个超声波传感器,并且被配置为基于在发送所述超声波和接收所述返回超声波之间的测量的经过时间来比较所述卡盘上的所述基板的测量位置与所述基板在所述卡盘上的指定布置 从每个超声波传感器。

    METHOD AND APPARATUS FOR DETECTING FOREIGN MATERIAL ON A CHUCK
    22.
    发明申请
    METHOD AND APPARATUS FOR DETECTING FOREIGN MATERIAL ON A CHUCK 有权
    检测外来材料的方法和装置

    公开(公告)号:US20150219479A1

    公开(公告)日:2015-08-06

    申请号:US14171874

    申请日:2014-02-04

    CPC classification number: H01L21/67288 G01F1/76 H01L21/00 H01L21/67109

    Abstract: An apparatus and method for leak detection of coolant gas from a chuck. The apparatus includes a chuck having a top surface and configured to clamp a substrate to the top surface, the chuck having one or more recessed regions in the top surface, the recessed regions configured to allow a cooling gas to contact a backside of the substrate; a cooling gas inlet and a cooling gas outlet connected to the one or more recessed regions; a first measurement device connected to the cooling gas inlet and configured to measure a first amount of cooling gas entering the cooling gas inlet and a second measurement device connected to the cooling gas outlet and configured to measure a second amount of cooling gas exiting from the cooling gas outlet; and a controller configured to determine a difference between the first amount of cooling gas and the second amount of cooling gas.

    Abstract translation: 一种用于从卡盘泄漏检测冷却剂气体的设备和方法。 该装置包括具有顶表面并被配置为将基板夹持到顶表面的卡盘,卡盘在顶表面中具有一个或多个凹陷区域,凹陷区域被配置为允许冷却气体接触基板的背面; 连接到所述一个或多个凹陷区域的冷却气体入口和冷却气体出口; 连接到冷却气体入口并被配置成测量进入冷却气体入口的第一量的冷却气体的第一测量装置和连接到冷却气体出口的第二测量装置,其被配置成测量从冷却出口排出的第二量的冷却气体 气体出口; 以及控制器,被配置为确定所述第一冷却气体量与所述第二冷却气体量之间的差。

    THERMAL VIA FOR 3D INTEGRATED CIRCUITS STRUCTURES
    24.
    发明申请
    THERMAL VIA FOR 3D INTEGRATED CIRCUITS STRUCTURES 有权
    通过3D集成电路结构的热量

    公开(公告)号:US20140239457A1

    公开(公告)日:2014-08-28

    申请号:US13780033

    申请日:2013-02-28

    Abstract: A three dimensional integrated circuit (3D-IC) structure, method of manufacturing the same and design structure thereof are provided. The 3D-IC structure includes two chips having a dielectric layer, through substrate vias (TSVs) and pads formed on the dielectric layer. The dielectric layer is formed on a bottom surface of each chip. Pads are electrically connected to the corresponding TSVs. The chips are disposed vertically adjacent to each other. The bottom surface of a second chip faces the bottom surface of a first chip. The pads of the first chip are electrically connected to the pads of the second chip through a plurality of conductive bumps. The 3D-IC structure further includes a thermal via structure vertically disposed between the first chip and the second chip and laterally disposed between the corresponding conductive bumps. The thermal via structure has an upper portion and a lower portion.

    Abstract translation: 提供三维集成电路(3D-IC)结构,其制造方法及其设计结构。 3D-IC结构包括具有介电层的两个芯片,通过衬底通孔(TSV)和形成在电介质层上的焊盘。 电介质层形成在每个芯片的底表面上。 垫片电连接到相应的TSV。 芯片垂直相邻配置。 第二芯片的底表面面向第一芯片的底表面。 第一芯片的焊盘通过多个导电凸块电连接到第二芯片的焊盘。 3D-IC结构还包括垂直设置在第一芯片和第二芯片之间并横向设置在相应的导电凸块之间的热通孔结构。 热通孔结构具有上部和下部。

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