公开(公告)号：US20110298110A1

公开(公告)日：2011-12-08

申请号：US12794612

申请日：2010-06-04

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

IPC分类号： H01L23/488 ,  H01L23/552 ,  H01L23/36 ,  H01L21/60

CPC分类号： H01L23/5389 ,  H01L21/561 ,  H01L21/568 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/544 ,  H01L23/552 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/48 ,  H01L24/97 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54426 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/21 ,  H01L2224/2105 ,  H01L2224/215 ,  H01L2224/22 ,  H01L2224/221 ,  H01L2224/24195 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/3511 ,  H05K1/0203 ,  H05K1/186 ,  H05K2201/09772 ,  H01L2924/01014 ,  H01L2924/05432 ,  H01L2924/0542 ,  H01L2924/0503 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a thermally conductive layer with a plurality of openings formed over a temporary carrier. The thermally conductive layer includes electrically non-conductive material. A semiconductor die has a plurality of bumps formed over contact pads on the die. The semiconductor die is mounted over the thermally conductive layer so that the bumps are disposed at least partially within the openings in the thermally conductive layer. An encapsulant is deposited over the die and thermally conductive layer. The temporary carrier is removed to expose the bumps. A first interconnect structure is formed over the encapsulant, semiconductor die, and bumps. The bumps are electrically connected to the first interconnect structure. A heat sink or shielding layer can be formed over the semiconductor die. A second interconnect structure can be formed over the encapsulant and electrically connected to the first interconnect structure through conductive vias formed in the encapsulant.

摘要翻译： 半导体器件具有形成在临时载体上的多个开口的导热层。 导热层包括非导电材料。 半导体管芯具有形成在管芯上的接触焊盘上的多个凸块。 半导体管芯安装在导热层上，使得凸块至少部分地设置在导热层的开口内。 密封剂沉积在管芯和导热层上。 移除临时载体以暴露凸块。 在密封剂，半导体管芯和凸块之上形成第一互连结构。 凸块电连接到第一互连结构。 可以在半导体管芯上形成散热器或屏蔽层。 第二互连结构可以形成在密封剂之上并且通过形成在密封剂中的导电通孔电连接到第一互连结构。

公开(公告)号：US08866294B2

公开(公告)日：2014-10-21

申请号：US13536177

申请日：2012-06-28

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

IPC分类号： H01L23/36

CPC分类号： H01L23/5389 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3677 ,  H01L24/19 ,  H01L24/48 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a semiconductor die with a plurality of bumps formed over a surface of the first semiconductor die. A penetrable adhesive layer is formed over a temporary carrier. The adhesive layer can include a plurality of slots. The semiconductor die is mounted to the carrier by embedding the bumps into the penetrable adhesive layer. The semiconductor die and interconnect structure can be separated by a gap. An encapsulant is deposited over the first semiconductor die. The bumps embedded into the penetrable adhesive layer reduce shifting of the first semiconductor die while depositing the encapsulant. The carrier is removed. An interconnect structure is formed over the semiconductor die. The interconnect structure is electrically connected to the bumps. A thermally conductive bump is formed over the semiconductor die, and a heat sink is mounted to the interconnect structure and thermally connected to the thermally conductive bump.

摘要翻译： 半导体器件具有形成在第一半导体管芯的表面上的多个凸点的半导体管芯。 在临时载体上形成可穿透的粘合剂层。 粘合剂层可以包括多个槽。 通过将凸块嵌入到可穿透的粘合剂层中，将半导体管芯安装到载体上。 半导体管芯和互连结构可以通过间隙分开。 密封剂沉积在第一半导体管芯上。 嵌入可渗透粘合剂层中的凸起减少了第一半导体管芯的移动，同时沉积密封剂。 载体被移除。 在半导体管芯上形成互连结构。 互连结构电连接到凸块。 导热凸块形成在半导体管芯上，并且散热器安装到互连结构并热连接到导热凸块。

公开(公告)号：US20130001771A1

公开(公告)日：2013-01-03

申请号：US13607204

申请日：2012-09-07

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

IPC分类号： H01L23/48

CPC分类号： H01L21/561 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16265 ,  H01L2224/48227 ,  H01L2224/73209 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor die has first and second discrete semiconductor components mounted over a plurality of wettable contact pads formed on a carrier. Conductive pillars are formed over the wettable contact pads. A semiconductor die is mounted to the conductive pillars over the first discrete components. The conductive pillars provide vertical stand-off of the semiconductor die as headroom for the first discrete components. The second discrete components are disposed outside a footprint of the semiconductor die. Conductive TSV can be formed through the semiconductor die. An encapsulant is deposited over the semiconductor die and first and second discrete components. The wettable contact pads reduce die and discrete component shifting during encapsulation. A portion of a back surface of the semiconductor die is removed to reduce package thickness. An interconnect structure is formed over the encapsulant and semiconductor die. Third discrete semiconductor components can be mounted over the semiconductor die.

摘要翻译： 半导体管芯具有安装在形成在载体上的多个可湿性接触焊盘上的第一和第二分立半导体部件。 导电柱形成在可湿性接触垫上。 半导体管芯通过第一分立元件安装到导电柱上。 导电柱提供半导体管芯的垂直间隔作为第一分立元件的余量。 第二分立元件设置在半导体管芯的占位面之外。 可以通过半导体管芯形成导电TSV。 密封剂沉积在半导体管芯和第一和第二分立元件上。 可湿式接触垫在封装期间减少管芯和分立元件的移动。 去除半导体管芯的后表面的一部分以减小封装厚度。 在密封剂和半导体管芯上形成互连结构。 第三分立半导体部件可以安装在半导体管芯上。

公开(公告)号：US20120049344A1

公开(公告)日：2012-03-01

申请号：US12868334

申请日：2010-08-25

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

IPC分类号： H01L23/498 ,  H01L21/50

CPC分类号： H01L21/561 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16265 ,  H01L2224/48227 ,  H01L2224/73209 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor die has first and second discrete semiconductor components mounted over a plurality of wettable contact pads formed on a carrier. Conductive pillars are formed over the wettable contact pads. A semiconductor die is mounted to the conductive pillars over the first discrete components. The conductive pillars provide vertical stand-off of the semiconductor die as headroom for the first discrete components. The second discrete components are disposed outside a footprint of the semiconductor die. Conductive TSV can be formed through the semiconductor die. An encapsulant is deposited over the semiconductor die and first and second discrete components. The wettable contact pads reduce die and discrete component shifting during encapsulation. A portion of a back surface of the semiconductor die is removed to reduce package thickness. An interconnect structure is formed over the encapsulant and semiconductor die. Third discrete semiconductor components can be mounted over the semiconductor die.

摘要翻译： 半导体管芯具有安装在形成在载体上的多个可湿性接触焊盘上的第一和第二分立半导体部件。 导电柱形成在可湿性接触垫上。 半导体管芯通过第一分立元件安装到导电柱上。 导电柱提供半导体管芯的垂直间隔作为第一分立元件的余量。 第二分立元件设置在半导体管芯的占位面之外。 可以通过半导体管芯形成导电TSV。 密封剂沉积在半导体管芯和第一和第二分立元件上。 可湿式接触垫在封装期间减少管芯和分立元件的移动。 去除半导体管芯的后表面的一部分以减小封装厚度。 在密封剂和半导体管芯上形成互连结构。 第三分立半导体部件可以安装在半导体管芯上。

公开(公告)号：US20120061824A1

公开(公告)日：2012-03-15

申请号：US12880255

申请日：2010-09-13

申请人： Reza A. Pagaila ,  Rajendra D. Pendse ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  Rajendra D. Pendse ,  Jun Mo Koo

IPC分类号： H01L23/485 ,  H01L21/56

CPC分类号： H01L23/28 ,  H01L21/563 ,  H01L21/568 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/81 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/18 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/19 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155

摘要： A semiconductor die has a conductive layer including a plurality of trace lines formed over a carrier. The conductive layer includes a plurality of contact pads electrically continuous with the trace lines. A semiconductor die has a plurality of contact pads and bumps formed over the contact pads. A plurality of conductive pillars can be formed over the contact pads of the semiconductor die. The bumps are formed over the conductive pillars. The semiconductor die is mounted to the conductive layer with the bumps directly bonded to an end portion of the trace lines to provide a fine pitch interconnect. An encapsulant is deposited over the semiconductor die and conductive layer. The conductive layer contains wettable material to reduce die shifting during encapsulation. The carrier is removed. An interconnect structure is formed over the encapsulant and semiconductor die. An insulating layer can be formed over the conductive layer.

摘要翻译： 半导体管芯具有包括形成在载体上的多条迹线的导电层。 导电层包括与迹线相连接的多个接触垫。 半导体管芯具有形成在接触焊盘上的多个接触焊盘和凸块。 可以在半导体管芯的接触焊盘上形成多个导电柱。 凸块形成在导电柱上。 将半导体管芯安装到导电层上，凸块直接接合到迹线的端部，以提供细间距互连。 密封剂沉积在半导体管芯和导电层上。 导电层包含可湿性材料，以减少封装期间的模具移动。 载体被移除。 在密封剂和半导体管芯上形成互连结构。 可以在导电层上形成绝缘层。

公开(公告)号：US08435834B2

公开(公告)日：2013-05-07

申请号：US12880255

申请日：2010-09-13

申请人： Reza A. Pagaila ,  Rajendra D. Pendse ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  Rajendra D. Pendse ,  Jun Mo Koo

IPC分类号： H01L21/50 ,  H01L21/48 ,  H01L21/44

CPC分类号： H01L23/28 ,  H01L21/563 ,  H01L21/568 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/81 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/18 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/19 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155

摘要： A semiconductor die has a conductive layer including a plurality of trace lines formed over a carrier. The conductive layer includes a plurality of contact pads electrically continuous with the trace lines. A semiconductor die has a plurality of contact pads and bumps formed over the contact pads. A plurality of conductive pillars can be formed over the contact pads of the semiconductor die. The bumps are formed over the conductive pillars. The semiconductor die is mounted to the conductive layer with the bumps directly bonded to an end portion of the trace lines to provide a fine pitch interconnect. An encapsulant is deposited over the semiconductor die and conductive layer. The conductive layer contains wettable material to reduce die shifting during encapsulation. The carrier is removed. An interconnect structure is formed over the encapsulant and semiconductor die. An insulating layer can be formed over the conductive layer.

摘要翻译： 半导体管芯具有包括形成在载体上的多条迹线的导电层。 导电层包括与迹线相连接的多个接触垫。 半导体管芯具有形成在接触焊盘上的多个接触焊盘和凸块。 可以在半导体管芯的接触焊盘上形成多个导电柱。 凸块形成在导电柱上。 将半导体管芯安装到导电层上，凸块直接接合到迹线的端部，以提供细间距互连。 密封剂沉积在半导体管芯和导电层上。 导电层包含可湿性材料，以减少封装期间的模具移动。 载体被移除。 在密封剂和半导体管芯上形成互连结构。 可以在导电层上形成绝缘层。

公开(公告)号：US20120012990A1

公开(公告)日：2012-01-19

申请号：US12837562

申请日：2010-07-16

申请人： Reza A. Pagaila ,  DaeSik Choi ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  DaeSik Choi ,  Jun Mo Koo

IPC分类号： H01L23/552 ,  H01L21/60

CPC分类号： H01L23/552 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3185 ,  H01L23/34 ,  H01L23/5226 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/06 ,  H01L24/14 ,  H01L24/19 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/06102 ,  H01L2224/06181 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/2101 ,  H01L2224/214 ,  H01L2224/221 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/73207 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/83192 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor wafer has a plurality of first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. A shielding layer is formed between the first and second semiconductor die. An electrical interconnect, such as conductive pillar, bump, or bond wire, is formed between the first and second semiconductor die. A conductive TSV can be formed through the first and second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and electrical interconnect. A heat sink is formed over the second semiconductor die. An interconnect structure, such as a bump, can be formed over the second semiconductor die. A portion of a backside of the first semiconductor die is removed. A protective layer is formed over exposed surfaces of the first semiconductor die. The protective layer covers the exposed backside and sidewalls of the first semiconductor die.

摘要翻译： 半导体晶片具有多个第一半导体管芯。 第二半导体管芯安装到第一半导体管芯。 在第一和第二半导体管芯之间形成屏蔽层。 在第一和第二半导体管芯之间形成诸如导电柱，凸起或接合线的电互连。 可以通过第一和第二半导体管芯形成导电TSV。 密封剂沉积在第一和第二半导体管芯和电互连上。 在第二半导体管芯上形成散热器。 可以在第二半导体管芯上形成诸如凸块的互连结构。 去除第一半导体管芯的背面的一部分。 在第一半导体管芯的暴露表面上形成保护层。 保护层覆盖第一半导体管芯的暴露的背面和侧壁。

公开(公告)号：US08642381B2

公开(公告)日：2014-02-04

申请号：US12837562

申请日：2010-07-16

申请人： Reza A. Pagaila ,  DaeSik Choi ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  DaeSik Choi ,  Jun Mo Koo

IPC分类号： H01L21/00

CPC分类号： H01L23/552 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3185 ,  H01L23/34 ,  H01L23/5226 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/06 ,  H01L24/14 ,  H01L24/19 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/06102 ,  H01L2224/06181 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/2101 ,  H01L2224/214 ,  H01L2224/221 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/73207 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/83192 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor wafer has a plurality of first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. A shielding layer is formed between the first and second semiconductor die. An electrical interconnect, such as conductive pillar, bump, or bond wire, is formed between the first and second semiconductor die. A conductive TSV can be formed through the first and second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and electrical interconnect. A heat sink is formed over the second semiconductor die. An interconnect structure, such as a bump, can be formed over the second semiconductor die. A portion of a backside of the first semiconductor die is removed. A protective layer is formed over exposed surfaces of the first semiconductor die. The protective layer covers the exposed backside and sidewalls of the first semiconductor die.

摘要翻译： 半导体晶片具有多个第一半导体管芯。 第二半导体管芯安装到第一半导体管芯。 在第一和第二半导体管芯之间形成屏蔽层。 在第一和第二半导体管芯之间形成诸如导电柱，凸起或接合线的电互连。 可以通过第一和第二半导体管芯形成导电TSV。 密封剂沉积在第一和第二半导体管芯和电互连上。 在第二半导体管芯上形成散热器。 可以在第二半导体管芯上形成诸如凸块的互连结构。 去除第一半导体管芯的背面的一部分。 在第一半导体管芯的暴露表面上形成保护层。 保护层覆盖第一半导体管芯的暴露的背面和侧壁。

公开(公告)号：US08822281B2

公开(公告)日：2014-09-02

申请号：US12710995

申请日：2010-02-23

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Seung Uk Yoon

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Seung Uk Yoon

IPC分类号： H01L21/337 ,  H01L23/538 ,  H01L23/48 ,  H01L25/10 ,  H01L21/768 ,  H01L23/31 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L23/5384 ,  H01L21/568 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/10 ,  H01L24/19 ,  H01L24/48 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/2518 ,  H01L2224/48247 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a semiconductor die mounted over a carrier. An encapsulant is deposited over the semiconductor die and carrier. An insulating layer is formed over the semiconductor die and encapsulant. A plurality of first vias is formed through the insulating layer and semiconductor die while mounted to the carrier. A plurality of second vias is formed through the insulating layer and encapsulant in the same direction as the first vias while the semiconductor die is mounted to the carrier. An electrically conductive material is deposited in the first vias to form conductive TSV and in the second vias to form conductive TMV. A first interconnect structure is formed over the insulating layer and electrically connected to the TSV and TMV. The carrier is removed. A second interconnect structure is formed over the semiconductor die and encapsulant and electrically connected to the TSV and TMV.

摘要翻译： 半导体器件具有安装在载体上的半导体管芯。 密封剂沉积在半导体管芯和载体上。 在半导体管芯和密封剂上形成绝缘层。 在安装到载体上时，通过绝缘层和半导体管芯形成多个第一通孔。 在将半导体管芯安装到载体上的同时，通过绝缘层和密封剂沿与第一通孔相同的方向形成多个第二通孔。 在第一通孔中沉积导电材料以形成导电TSV，并在第二通孔中形成导电TMV。 第一互连结构形成在绝缘层上并电连接到TSV和TMV。 载体被移除。 第二互连结构形成在半导体管芯和密封剂上并电连接到TSV和TMV。

公开(公告)号：US20120112326A1

公开(公告)日：2012-05-10

申请号：US13349829

申请日：2012-01-13

申请人： Reza A. Pagaila ,  Yaojian Lin

发明人： Reza A. Pagaila ,  Yaojian Lin

IPC分类号： H01L23/552

CPC分类号： H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3121 ,  H01L23/552 ,  H01L24/19 ,  H01L24/97 ,  H01L25/03 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/20 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2224/19 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has a plurality of semiconductor die mounted to a temporary carrier. A prefabricated shielding frame has a plate and integrated bodies extending from the plate. The bodies define a plurality of cavities in the shielding frame. A penetrable material is deposited in the cavities of the shielding frame. The shielding frame is mounted over the semiconductor die such that the penetrable material encapsulates the die. The carrier is removed. An interconnect structure is formed over the die, shielding frame, and penetrable material. The bodies of the shielding frame are electrically connected through the interconnect structure to a ground point. The shielding frame is singulated through the bodies or through the plate and penetrable material to separate the die. TIM is formed over the die adjacent to the plate of the shielding frame. A heat sink is mounted over the plate of the shielding frame.

摘要翻译： 半导体器件具有安装到临时载体上的多个半导体管芯。 预制屏蔽框架具有板和从板延伸的整体。 主体在屏蔽框架中限定多个空腔。 可穿透材料沉积在屏蔽框架的空腔中。 屏蔽框架安装在半导体管芯上，使得可穿透材料封装模具。 载体被移除。 在模具，屏蔽框架和可穿透材料上形成互连结构。 屏蔽框架的主体通过互连结构电连接到接地点。 屏蔽框架通过主体或通过板和可穿透材料分离，以分离模具。 TIM与屏蔽框架的板相邻形成在模具上。 散热器安装在屏蔽框架的板上。