公开(公告)号：US09865548B2

公开(公告)日：2018-01-09

申请号：US15158963

申请日：2016-05-19

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Rajesh Katkar ,  Charles G. Woychik ,  Guilian Gao ,  Arkalgud R. Sitaram

IPC: H01L21/00 ,  H01L23/49 ,  H01L21/76 ,  H01L23/532 ,  H01L23/522 ,  H01L23/00 ,  H01L21/768 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L23/5328 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76898 ,  H01L23/49811 ,  H01L23/5226 ,  H01L24/83 ,  H01L25/0652 ,  H01L2224/0401 ,  H01L2224/131 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/4823 ,  H01L2224/73203 ,  H01L2224/73257 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2924/014

Abstract: An interconnect (124) suitable for attachment of integrated circuit assemblies to each other comprises a polymer member (130) which is conductive and/or is coated with a conductive material (144). Such interconnects replace metal bond wires in some embodiments. Other features are also provided.

公开(公告)号：US09825002B2

公开(公告)日：2017-11-21

申请号：US15208985

申请日：2016-07-13

Applicant: Invensas Corporation

Inventor： Rajesh Katkar ,  Reynaldo Co ,  Scott McGrath ,  Ashok S. Prabhu ,  Sangil Lee ,  Liang Wang ,  Hong Shen

IPC: H01L21/56 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L25/0652 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/02335 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/83005 ,  H01L2224/9222 ,  H01L2225/06506 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2225/06596 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/1032 ,  H01L2924/10329 ,  H01L2924/1037 ,  H01L2924/1436 ,  H01L2924/1438 ,  H01L2924/18162 ,  H01L2924/19107 ,  H01L2224/19

Abstract: A microelectronic assembly includes a stack of semiconductor chips each having a front surface defining a respective plane of a plurality of planes. A chip terminal may extend from a contact at a front surface of each chip in a direction towards the edge surface of the respective chip. The chip stack is mounted to substrate at an angle such that edge surfaces of the chips face a major surface of the substrate that defines a second plane that is transverse to, i.e., not parallel to the plurality of parallel planes. An electrically conductive material electrically connects the chip terminals with corresponding substrate contacts.

公开(公告)号：US09666559B2

公开(公告)日：2017-05-30

申请号：US14809036

申请日：2015-07-24

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Rajesh Katkar ,  Hong Shen

IPC: H01L21/44 ,  H01L25/065 ,  H01L23/498 ,  H01L23/00 ,  H01L23/367 ,  H01L25/18 ,  B81B7/00 ,  H01L23/538 ,  H01L21/56 ,  H01L25/00 ,  H01L23/48 ,  H01L21/768 ,  B81C1/00 ,  H01L23/31 ,  H01L25/10

CPC classification number: H01L24/09 ,  B81B7/008 ,  B81B2207/07 ,  B81C1/0023 ,  H01L21/565 ,  H01L21/76877 ,  H01L23/3107 ,  H01L23/3157 ,  H01L23/34 ,  H01L23/367 ,  H01L23/481 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/06 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/89 ,  H01L24/96 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/10 ,  H01L25/105 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/08225 ,  H01L2224/09181 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/33517 ,  H01L2224/48135 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/80001 ,  H01L2224/81005 ,  H01L2224/92124 ,  H01L2224/92133 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06548 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/1511 ,  H01L2924/15153 ,  H01L2924/15192 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/32225 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/85399

Abstract: In a multi-chip module (MCM), a “super” chip (110N) is attached to multiple “plain” chips (110F; “super” and “plain” chips can be any chips). The super chip is positioned above the wiring board (WB) but below at least some of plain chips (110F). The plain chips overlap the super chip. Further, the plain chips' low speed IOs can be connected to the WB by long direct connections such as bond wires (e.g. BVAs) or solder stacks; such connections can be placed side by side with the super chip. Such connections can be long, so the super chip is not required to be thin. Also, if through-substrate vias (TSVs) are omitted, the manufacturing yield is high and the manufacturing cost is low. Other structures are provided that combine the short and long direct connections to obtain desired physical and electrical properties.

公开(公告)号：US09615451B2

公开(公告)日：2017-04-04

申请号：US14887674

申请日：2015-10-20

Applicant: Invensas Corporation

Inventor： Rajesh Katkar ,  Cyprian Emeka Uzoh ,  Belgacem Haba ,  Ilyas Mohammed

IPC: H05K1/09 ,  H05K1/00 ,  H05K1/16 ,  H05K1/11 ,  H05K7/10 ,  H05K1/03 ,  H01L23/498 ,  H01L21/48 ,  H01L23/13 ,  H05K3/40 ,  H05K3/42

CPC classification number: H05K1/0306 ,  H01L21/481 ,  H01L21/4853 ,  H01L21/486 ,  H01L23/13 ,  H01L23/3731 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/5381 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386 ,  H01L24/17 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/16113 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/107 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H05K1/09 ,  H05K1/112 ,  H05K1/115 ,  H05K3/4007 ,  H05K3/42 ,  H05K2201/09545 ,  H05K2201/10378 ,  H05K2203/0323

Abstract: Interposers and methods of making the same are disclosed herein. In one embodiment, an interposer includes a region having first and second oppositely facing surfaces and a plurality of pores, each pore extending in a first direction from the first surface towards the second surface, wherein alumina extends along a wall of each pore; a plurality of electrically conductive connection elements extending in the first direction, consisting essentially of aluminum and being electrically isolated from one another by at least the alumina; a first conductive path provided at the first surface for connection with a first component external to the interposer; and a second conductive path provided at the second surface for connection with a second component external to the interposer, wherein the first and second conductive paths are electrically connected through at least some of the connection elements.

公开(公告)号：US20170069599A1

公开(公告)日：2017-03-09

申请号：US14845150

申请日：2015-09-03

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Rajesh Katkar

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/09 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/82 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L27/14618 ,  H01L27/14636 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/09181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48101 ,  H01L2224/48227 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2924/143 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: In a microelectronic package, a first wire bond wire is coupled to an upper surface of a substrate. A first bond mass is coupled to another end of the first wire bond wire. A second wire bond wire is coupled to the upper surface. A second bond mass is coupled to another end of the second wire bond wire. The first and second wire bond wires laterally jut out horizontally away from the upper surface of the substrate for at least a distance of approximately 2 to 3 times a diameter of both the first wire bond wire and the second wire bond wire. The first wire bond wire and the second wire bond wire are horizontal for the distance with respect to being co-planar with the upper surface within +/−10 degrees.

Abstract translation: 在微电子封装中，第一引线接合线耦合到衬底的上表面。 第一接合块联接到第一引线接合线的另一端。 第二线接合线连接到上表面。 第二接合块联接到第二引线接合线的另一端。 第一和第二线接合线横向突出出离开衬底的上表面至少距离第一引线接合线和第二引线接合线的直径的大约2至3倍的距离。 第一引线接合线和第二引线接合线相对于上表面在+/- 10度内相互平行的距离是水平的。

公开(公告)号：US09583426B2

公开(公告)日：2017-02-28

申请号：US14533728

申请日：2014-11-05

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Gabriel Z. Guevara ,  Rajesh Katkar ,  Cyprian Emeka Uzoh ,  Laura Wills Mirkarimi

IPC: H01L23/498 ,  H01L25/065 ,  H01L21/48 ,  H01L25/00

CPC classification number: H01L23/49822 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49805 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/09 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/15192 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399

Abstract: An interposer (110) has contact pads at the top and/or bottom surfaces for connection to circuit modules (e.g. ICs 112). The interposer includes a substrate made of multiple layers (110.i). Each layer can be a substrate (110S), possibly a ceramic substrate, with circuitry. The substrates extend vertically. Multiple interposers are fabricated in a single structure (310) made of vertical layers (310.i) corresponding to the interposers' layers. The structure is diced along horizontal planes (314) to provide the interposers. An interposer's vertical conductive lines (similar to through-substrate vias) can be formed on the substrates' surfaces before dicing and before all the substrates are attached to each other. Thus, there is no need to make through-substrate holes for the vertical conductive lines. Non-vertical features can also be formed on the substrates' surfaces before the substrates are attached to each other. Other embodiments are also provided.

Abstract translation: 插入器（110）在顶部和/或底部表面处具有用于连接到电路模块（例如IC 112）的接触焊盘。 插入器包括由多层（110.i）制成的衬底。 每个层可以是具有电路的衬底（110S），可能是陶瓷衬底。 基板垂直延伸。 在由对应于插入层的垂直层（310.i）制成的单个结构（310）中制造多个插入件。 沿着水平面（314）切割结构以提供插入件。 在切割之前和所有基板彼此附接之前，可以在基板表面上形成插入件的垂直导线（类似于贯穿基板通孔）。 因此，不需要对垂直导线进行贯通基板孔。 在基板彼此附接之前，也可以在基板表面上形成非垂直特征。 还提供了其他实施例。

公开(公告)号：US09524883B2

公开(公告)日：2016-12-20

申请号：US14535159

申请日：2014-11-06

Applicant: Invensas Corporation

Inventor： Charles G. Woychik ,  Eric S. Tosaya ,  Rajesh Katkar

IPC: H01L21/48 ,  H01L25/00 ,  H01L25/065 ,  H01L21/683 ,  H01L23/13 ,  H01L23/498

CPC classification number: H01L21/4853 ,  H01L21/6831 ,  H01L21/6838 ,  H01L23/04 ,  H01L23/13 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/562 ,  H01L25/00 ,  H01L25/065 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/00

Abstract: A workpiece (120) has protruding conductive features (140) at least on a first side. The second side is processed while the workpiece is held from the first side by a holder (220H). To prevent damage to the protruding features and flatten the workpiece (which could be otherwise warped), a spacer (210) is inserted between the workpiece and the holder. The spacer has holes (250) receiving the protruding features. The workpiece can be held by forces generated by the holder such as vacuum or an electrostatic force, without an adhesive. Other features and advantages are provided.

Abstract translation: 工件（120）至少在第一侧具有突出的导电特征（140）。 在第二面被保持器（220H）从第一侧保持的同时进行第二面处理。 为了防止突出特征的损坏并使工件变平（可能会扭曲），在工件和保持器之间插入间隔件（210）。 间隔件具有接收突出特征的孔（250）。 工件可以由保持器产生的力例如真空或静电力保持，而不用粘合剂。 提供其他特点和优点。

公开(公告)号：US09508638B2

公开(公告)日：2016-11-29

申请号：US14833979

申请日：2015-08-24

Applicant: INVENSAS CORPORATION

Inventor： Liang Wang ,  Hong Shen ,  Rajesh Katkar

IPC: H01L21/02 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48

CPC classification number: H01L28/60 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/5223 ,  H01L24/05 ,  H01L24/32 ,  H01L24/83 ,  H01L25/105 ,  H01L25/11 ,  H01L25/115 ,  H01L25/165 ,  H01L25/50 ,  H01L28/40 ,  H01L28/65 ,  H01L2224/05009 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/1205 ,  H01L2924/15311 ,  H01L2924/16153 ,  H01L2924/00

Abstract: A method for making an integrated circuit package includes providing a handle wafer having a first region defining a cavity. A capacitor is formed in the first region. The capacitor has a pair of electrodes, each coupled to one of a pair of conductive pads, at least one of which is disposed on a lower surface of the handle wafer. An interposer having an upper surface with a conductive pad and at least one semiconductor die disposed thereon is also provided. The die has an integrated circuit that is electroconductively coupled to a redistribution layer (RDL) of the interposer. The lower surface of the handle wafer is bonded to the upper surface of the interposer such that the die is disposed below or within the cavity and the electroconductive pad of the handle wafer is bonded to the electroconductive pad of the interposer in a metal-to-metal bond.

公开(公告)号：US09502372B1

公开(公告)日：2016-11-22

申请号：US14701049

申请日：2015-04-30

Applicant: Invensas Corporation

Inventor： Rajesh Katkar ,  Tu Tam Vu ,  Bongsub Lee ,  Kyong-Mo Bang ,  Xuan Li ,  Long Huynh ,  Gabriel Z. Guevara ,  Akash Agrawal ,  Willmar Subido ,  Laura Wills Mirkarimi

IPC: H01L23/00 ,  H01L23/31 ,  H01L25/065 ,  H01L21/56 ,  H01L21/78

CPC classification number: H01L24/49 ,  H01L21/486 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/48 ,  H01L24/85 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/4801 ,  H01L2224/48235 ,  H01L2224/484 ,  H01L2224/4845 ,  H01L2224/49171 ,  H01L2224/49173 ,  H01L2224/49177 ,  H01L2224/73217 ,  H01L2224/73267 ,  H01L2224/85005 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/2064 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/85399

Abstract: An apparatus relates generally to a microelectronic package. In such an apparatus, a microelectronic die has a first surface, a second surface opposite the first surface, and a sidewall surface between the first and second surfaces. A plurality of wire bond wires with proximal ends thereof are coupled to either the first surface or the second surface of the microelectronic die with distal ends of the plurality of wire bond wires extending away from either the first surface or the second surface, respectively, of the microelectronic die. A portion of the plurality of wire bond wires extends outside a perimeter of the microelectronic die into a fan-out (“FO”) region. A molding material covers the first surface, the sidewall surface, and portions of the plurality of the wire bond wires from the first surface of the microelectronic die to an outer surface of the molding material.

Abstract translation: 一种装置一般涉及微电子封装。 在这种装置中，微电子管芯具有第一表面，与第一表面相对的第二表面和第一表面和第二表面之间的侧壁表面。 多个具有近端的引线接合线被耦合到微电子管芯的第一表面或第二表面，多个引线接合线的远端分别远离第一表面或第二表面 微电子模具。 多个引线接合线的一部分在微电子管芯的周边外延伸到扇出（“FO”）区域中。 成型材料覆盖第一表面，侧壁表面以及多个引线接合线从微电子管芯的第一表面到模制材料的外表面的部分。

公开(公告)号：US20160284672A1

公开(公告)日：2016-09-29

申请号：US15174338

申请日：2016-06-06

Applicant: Invensas Corporation

Inventor： Rajesh Katkar ,  Arkalgud R. Sitaram ,  Cyprian Emeka Uzoh

IPC: H01L25/065 ,  H01L23/367

CPC classification number: H01L25/0657 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/31105 ,  H01L21/76897 ,  H01L21/76898 ,  H01L23/3675 ,  H01L23/3677 ,  H01L23/42 ,  H01L23/481 ,  H01L23/5386 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/00

Abstract: An apparatus relates generally to a three-dimensional stacked integrated circuit. In such an apparatus, the three-dimensional stacked integrated circuit has at least a first die and a second die interconnected to one another using die-to-die interconnects. A substrate of the first die has at least one thermal via structure extending from a lower surface of the substrate toward a well of the substrate without extending to the well and without extending through the substrate. A first end of the at least one thermal via structure is at least sufficiently proximate to the well of the substrate for conduction of heat away therefrom. The substrate has at least one through substrate via structure extending from the lower surface of the substrate to an upper surface of the substrate. A second end of the at least one thermal via structure is coupled to at least one through die via structure of the second die for thermal conductivity.

Abstract translation: 装置一般涉及三维堆叠集成电路。 在这种装置中，三维堆叠集成电路具有至少第一管芯和第二管芯，使用管芯到管芯互连彼此互连。 第一管芯的衬底具有至少一个热通孔结构，其从衬底的下表面朝向衬底的阱延伸，而不延伸到阱并且不延伸通过衬底。 所述至少一个热通孔结构的第一端至少足够靠近所述衬底的阱，用于将热量传导出来。 衬底具有从衬底的下表面延伸到衬底的上表面的至少一个穿过衬底通孔结构。 所述至少一个热通孔结构的第二端与所述第二管芯的至少一个通孔通孔结构耦合以进行导热。