公开(公告)号：US20070167000A1

公开(公告)日：2007-07-19

申请号：US11712815

申请日：2007-03-01

申请人： Alan Wood ,  David Hembree

发明人： Alan Wood ,  David Hembree

IPC分类号： H01L21/4763

CPC分类号： H01L23/02 ,  B33Y70/00 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/48 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/6834 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13024 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/4554 ,  H01L2224/45565 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/4824 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48992 ,  H01L2224/49429 ,  H01L2224/78301 ,  H01L2224/85001 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85121 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06596 ,  H01L2924/00015 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/19042 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45644 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00012

摘要： A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) bonded to the substrate contact. The through wire interconnect (TWI) includes a via through the substrate contact and the substrate, a wire in the via bonded to the substrate contact, and a contact on the wire. A stacked semiconductor component includes the semiconductor substrate, and a second semiconductor substrate stacked on the substrate and bonded to a through wire interconnect on the substrate. A method for fabricating a semiconductor component with a through wire interconnect includes the steps of providing a semiconductor substrate with a substrate contact, forming a via through the substrate contact and part way through the substrate, placing the wire in the via, bonding the wire to the substrate contact, and then thinning the substrate from a second side to expose a contact on the wire. A system for fabricating the semiconductor component includes a bonding capillary configured to place the wire in the via, and to form a bonded connection between the wire and the substrate contact.

摘要翻译： 半导体部件包括具有基板接触的半导体基板和与该基板接触部接合的贯通线互连（TWI）。 通线互连（TWI）包括通过基板接触和基板的通孔，连接到基板触点的通孔中的导线和线上的触点。 堆叠的半导体部件包括半导体衬底和堆叠在衬底上并结合到衬底上的通孔互连的第二半导体衬底。 一种用于制造具有通孔布线的半导体部件的方法包括以下步骤：提供具有基板接触的半导体基板，通过基板接触形成通孔，并且部分地穿过基板，将导线放置在通孔中，将导线接合到 衬底接触，然后从第二侧使衬底变薄以暴露线上的接触。 用于制造半导体部件的系统包括被配置为将导线放置在通路中并且在导线和基板接触之间形成接合连接的接合毛细管。

公开(公告)号：US20050084986A1

公开(公告)日：2005-04-21

申请号：US10983111

申请日：2004-11-05

申请人： David Hembree ,  Alan Wood

发明人： David Hembree ,  Alan Wood

IPC分类号： H01L21/66 ,  H01L21/00

CPC分类号： H01L22/20 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/0568 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2224/05099 ,  H01L2924/013

摘要： A method for fabricating semiconductor components is performed using a laser scanner and a laser imaging process. A substrate, such as a semiconductor wafer, containing multiple semiconductor components, such as dice or packages, is provided. The components include integrated circuits, and component contacts in electrical communication with the integrated circuits. Initially, the components are tested to identify and locate good components and defective components on the substrate. Using data from the testing step and the laser scanner, patterns of conductors are then formed to either repair the defective components, to electrically isolate the defective components for burn-in, or to form component clusters containing only the good components. Alternately, using data from the testing step and the laser scanner, a matching test board can be fabricated, and used to electrically engage the good components, while the defective components remain isolated.

摘要翻译： 使用激光扫描仪和激光成像处理来执行制造半导体部件的方法。 提供了诸如骰子或包装之类的诸如半导体晶片的衬底，其包含多个半导体元件。 这些部件包括集成电路和与集成电路进行电气通信的部件触点。 最初，对组件进行测试以识别和定位衬底上的良好组件和缺陷组件。 使用来自测试步骤和激光扫描仪的数据，然后形成导体图案，以修复有缺陷的部件，将缺陷部件电隔离以进行老化，或形成仅包含良好部件的组件簇。 或者，使用来自测试步骤和激光扫描仪的数据，可以制造匹配的测试板，并且用于电气接合良好部件，同时有缺陷的部件保持隔离。

公开(公告)号：US20080042247A1

公开(公告)日：2008-02-21

申请号：US11859776

申请日：2007-09-23

申请人： Alan Wood ,  David Hembree

发明人： Alan Wood ,  David Hembree

IPC分类号： H01L23/495

CPC分类号： H01L23/02 ,  B33Y70/00 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/48 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/6834 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13024 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/4554 ,  H01L2224/45565 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/4824 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48992 ,  H01L2224/49429 ,  H01L2224/78301 ,  H01L2224/85001 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85121 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06596 ,  H01L2924/00015 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/19042 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45644 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00012

摘要： A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) bonded to the substrate contact. The through wire interconnect (TWI) includes a via through the substrate contact and the substrate, a wire in the via bonded to the substrate contact, and a contact on the wire. A stacked semiconductor component includes the semiconductor substrate, and a second semiconductor substrate stacked on the substrate and bonded to a through wire interconnect on the substrate. A method for fabricating a semiconductor component with a through wire interconnect includes the steps of providing a semiconductor substrate with a substrate contact, forming a via through the substrate contact and part way through the substrate, placing the wire in the via, bonding the wire to the substrate contact, and then thinning the substrate from a second side to expose a contact on the wire. A system for fabricating the semiconductor component includes a bonding capillary configured to place the wire in the via, and to form a bonded connection between the wire and the substrate contact.

摘要翻译： 半导体部件包括具有基板接触的半导体基板和与该基板接触部接合的贯通线互连（TWI）。 通线互连（TWI）包括通过基板接触和基板的通孔，连接到基板触点的通孔中的导线和线上的触点。 堆叠的半导体部件包括半导体衬底和堆叠在衬底上并结合到衬底上的通孔互连的第二半导体衬底。 一种用于制造具有通孔布线的半导体部件的方法包括以下步骤：提供具有基板接触的半导体基板，通过基板接触形成通孔，并且部分地穿过基板，将导线放置在通孔中，将导线接合到 衬底接触，然后从第二侧使衬底变薄以暴露线上的接触。 用于制造半导体部件的系统包括被配置为将导线放置在通路中并且在导线和基板接触之间形成接合连接的接合毛细管。

公开(公告)号：US20070126091A1

公开(公告)日：2007-06-07

申请号：US11296057

申请日：2005-12-07

申请人： Alan Wood ,  David Hembree

发明人： Alan Wood ,  David Hembree

IPC分类号： H01L23/495

CPC分类号： H01L23/02 ,  B33Y70/00 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/48 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/6834 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13024 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/4554 ,  H01L2224/45565 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/4824 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48992 ,  H01L2224/49429 ,  H01L2224/78301 ,  H01L2224/85001 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85121 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06596 ,  H01L2924/00015 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/19042 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45644 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00012

摘要： A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) bonded to the substrate contact. The through wire interconnect (TWI) includes a via through the substrate contact and the substrate, a wire in the via bonded to the substrate contact, and a contact on the wire. A stacked semiconductor component includes the semiconductor substrate, and a second semiconductor substrate stacked on the substrate and bonded to a through wire interconnect on the substrate. A method for fabricating a semiconductor component with a through wire interconnect includes the steps of providing a semiconductor substrate with a substrate contact, forming a via through the substrate contact and part way through the substrate, placing the wire in the via, bonding the wire to the substrate contact, and then thinning the substrate from a second side to expose a contact on the wire. A system for fabricating the semiconductor component includes a bonding capillary configured to place the wire in the via, and to form a bonded connection between the wire and the substrate contact.

公开(公告)号：US20070246819A1

公开(公告)日：2007-10-25

申请号：US11409638

申请日：2006-04-24

申请人： David Hembree ,  Alan Wood

发明人： David Hembree ,  Alan Wood

IPC分类号： H01L23/04

CPC分类号： H01L24/16 ,  G01R1/06716 ,  G01R1/07307 ,  H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02125 ,  H01L2224/0233 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/0333 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/1134 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45116 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45684 ,  H01L2224/45698 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48455 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/4899 ,  H01L2224/48992 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10155 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45164 ,  H01L2924/013 ,  H01L2924/00013

摘要： A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) attached to the substrate contact. The through wire interconnect provides a multi level interconnect having contacts on opposing first and second sides of the semiconductor substrate. The through wire interconnect (TWI) includes a via through the substrate contact and the substrate, a wire in the via having a bonded connection with the substrate contact, a first contact on the wire proximate to the first side, and a second contact on the wire proximate to the second side. The through wire interconnect (TWI) also includes a polymer layer which partially encapsulates the through wire interconnect (TWI) while leaving the first contact exposed. The semiconductor component can be used to fabricate stacked-systems, module systems and test systems. A method for fabricating the semiconductor component can include a film assisted molding process for forming the polymer layer.

摘要翻译： 半导体部件包括具有衬底接触的半导体衬底和附着到衬底触点的通线互连（TWI）。 通线互连提供了在半导体衬底的相对的第一和第二侧上具有触点的多电平互连。 通线互连（TWI）包括穿过基板触点和基板的通孔，通孔中的导线与基板接触具有接合连接，接近第一侧的导线上的第一触点和第二触点 电线靠近第二侧。 通线互连（TWI）还包括聚合物层，其部分地封装通孔互连（TWI），同时使第一触点暴露。 半导体组件可用于制造堆叠系统，模块系统和测试系统。 制造半导体部件的方法可以包括用于形成聚合物层的膜辅助成型工艺。

公开(公告)号：US20060261446A1

公开(公告)日：2006-11-23

申请号：US11133085

申请日：2005-05-19

申请人： Alan Wood ,  William Hiatt ,  David Hembree

发明人： Alan Wood ,  William Hiatt ,  David Hembree

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/76898 ,  H01L21/4885 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/4951 ,  H01L23/4985 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/50 ,  H01L24/78 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/86 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06102 ,  H01L2224/06136 ,  H01L2224/11003 ,  H01L2224/1131 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/2518 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/4824 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/78301 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/85001 ,  H01L2224/851 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19042 ,  Y10T29/53187 ,  Y10T29/53209 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2224/83851 ,  H01L2224/05552

摘要： A backside method for fabricating a semiconductor component with a conductive interconnect includes the step of providing a semiconductor substrate having a circuit side, a backside, and a substrate contact on the circuit side. The method also includes the steps of forming a substrate opening from the backside to the substrate contact, and then bonding the conductive interconnect to an inner surface of the substrate contact. A system for performing the method includes the semiconductor substrate, a thinning system for thinning the semiconductor substrate, an etching system for forming the substrate opening, and a bonding system for bonding the conductive interconnect to the substrate contact. The semiconductor component can be used to form module components, underfilled components, stacked components, and image sensor semiconductor components.

摘要翻译： 用于制造具有导电互连的半导体部件的背面方法包括在电路侧提供具有电路侧，背面和基板接触的半导体衬底的步骤。 该方法还包括以下步骤：从背面形成衬底开口到衬底触点，然后将导电互连件接合到衬底触点的内表面。 用于执行该方法的系统包括半导体衬底，用于使半导体衬底变薄的变薄系统，用于形成衬底开口的蚀刻系统，以及用于将导电互连件接合到衬底接触件的接合系统。 半导体元件可用于形成模块组件，底部填充组件，堆叠组件和图像传感器半导体组件。

公开(公告)号：US20070222054A1

公开(公告)日：2007-09-27

申请号：US11743660

申请日：2007-05-02

申请人： David Hembree

发明人： David Hembree

IPC分类号： H01L23/48

CPC分类号： H01L25/0657 ,  B23K20/004 ,  B23K20/005 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/50 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45565 ,  H01L2224/45644 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48455 ,  H01L2224/48471 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48992 ,  H01L2224/78301 ,  H01L2224/8121 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/85043 ,  H01L2224/85045 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2224/9202 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/06589 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/20751 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/3025 ,  H05K3/4046 ,  H05K2201/10287 ,  H05K2203/049 ,  Y10T29/49117 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49162 ,  Y10T29/49169 ,  Y10T29/53213 ,  H01L2924/20752 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A method for fabricating a semiconductor component with a through wire interconnect includes the step of providing a substrate having a circuit side, a back side, and a through via. The method also includes the steps of: threading a wire through the via, forming a contact on the wire on the back side, forming a bonded contact on the wire on the circuit side, and then severing the wire from the bonded contact. The through wire interconnect includes the wire in the via, the contact on the back side and the bonded contact on the circuit side. The contact on the back side, and the bonded contact on the circuit side, permit multiple components to be stacked with electrical connections between adjacent components. A system for performing the method includes the substrate with the via, and a wire bonder having a bonding capillary configured to thread the wire through the via, and form the contact and the bonded contact. The semiconductor component can be used to form chip scale components, wafer scale components, stacked components, or interconnect components for electrically engaging or testing other semiconductor components.

摘要翻译： 用于通过导线互连制造半导体部件的方法包括提供具有电路侧，背面和通孔的基板的步骤。 该方法还包括以下步骤：将导线穿过通孔，在背面的导线上形成接触，在电路侧的导线上形成接合接触，然后将线从接合接触件断开。 通线互连包括通孔中的导线，背侧的触点和电路侧的接合触点。 背面的触点和电路侧的接合触点允许多个部件与相邻部件之间的电连接层叠。 用于执行该方法的系统包括具有通孔的基板和具有接合毛细管的引线接合器，所述接合毛细管被配置为使线穿过通孔，并形成接触和接合接触。 半导体部件可用于形成用于电接合或测试其它半导体部件的芯片级部件，晶片级部件，堆叠部件或互连部件。

公开(公告)号：US20060043509A1

公开(公告)日：2006-03-02

申请号：US10925502

申请日：2004-08-24

申请人： Charles Watkins ,  David Hembree ,  Peter Benson ,  Salman Akram

发明人： Charles Watkins ,  David Hembree ,  Peter Benson ,  Salman Akram

IPC分类号： H01L21/00 ,  H01L27/14 ,  H01L31/0232

CPC分类号： H01L27/14625 ,  H01L24/94 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1469 ,  H01L31/0203 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

摘要： Microelectronic imaging devices and methods of packaging microelectronic imaging devices are disclosed herein. In one embodiment, a microelectronic imaging device includes a microelectronic die having an integrated circuit, an image sensor electrically coupled to the integrated circuit, and a plurality of bond-pads electrically coupled to the integrated circuit. The imaging device further includes a cover over the image sensor and a plurality of interconnects in and/or on the cover that are electrically coupled to corresponding bond-pads of the die. The interconnects provide external electrical contacts for the bond-pads of the die. The interconnects can extend through the cover or along a surface of the cover.

公开(公告)号：US20050211236A1

公开(公告)日：2005-09-29

申请号：US11137048

申请日：2005-05-25

申请人： Salman Akram ,  Derek Gochnour ,  Michael Hess ,  David Hembree

发明人： Salman Akram ,  Derek Gochnour ,  Michael Hess ,  David Hembree

IPC分类号： B23P17/00 ,  B26D3/00 ,  B28D1/32 ,  B28D5/02 ,  H01L21/00 ,  H01L21/301 ,  H01L23/58 ,  H01L29/00 ,  H05K3/02 ,  H05K3/20 ,  H05K3/30

CPC分类号： H01L21/67092 ,  B28D5/024 ,  B28D5/029 ,  Y10T83/0222 ,  Y10T83/0363 ,  Y10T83/04 ,  Y10T83/0524 ,  Y10T83/7726 ,  Y10T83/7809 ,  Y10T83/7868

摘要： A saw for dicing substrates, such as semiconductor wafers, that has one or more variable indexing capabilities and two or more blades. One of the blades may be moved laterally or vertically, independent of one or more other blades.

摘要翻译： 用于具有一个或多个可变分度能力的切割基板（例如半导体晶片）的锯和两个或更多个叶片。 一个叶片可以横向或垂直地移动，而与一个或多个其它叶片无关。

公开(公告)号：US06365967B1

公开(公告)日：2002-04-02

申请号：US09318280

申请日：1999-05-25

申请人： Salman Akram ,  David Hembree

发明人： Salman Akram ,  David Hembree

IPC分类号： H01L2348

CPC分类号： H01L24/02 ,  H01L24/10 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/10165 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/8014 ,  H01L2224/81136 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81385 ,  H01L2224/81801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  Y10T29/49 ,  H01L2924/00

摘要： A method for forming an interconnect structure includes providing a substrate, and forming a raised contact member on the substrate. A conductive layer is formed covering at least a portion of the raised contact member. A conductive trace is formed on the substrate in electrical communication with the conductive layer, and an alignment grid is formed on the substrate proximate the raised contact member. An interconnect structure includes a substrate and a raised contact member defined in the substrate. A conductive layer covers at least a portion of the raised contact member, and a conductive trace is in electrical communication with the conductive layer. An alignment grid is proximate the raised contact member.

摘要翻译： 形成互连结构的方法包括提供衬底，以及在衬底上形成凸起的接触构件。 形成覆盖凸起接触构件的至少一部分的导电层。 导电迹线形成在与导电层电连通的衬底上，并且在靠近凸起的接触构件的衬底上形成对准栅极。 互连结构包括衬底和限定在衬底中的凸起接触构件。 导电层覆盖凸起接触构件的至少一部分，并且导电迹线与导电层电连通。 对准网格靠近凸起的接触构件。