公开(公告)号：US08614544B2

公开(公告)日：2013-12-24

申请号：US13383815

申请日：2010-05-28

Applicant: Ryo Suzuki ,  Tadao Hayashi ,  Tomoya Tsukioka ,  Yoshikazu Takeuchi

Inventor： Ryo Suzuki ,  Tadao Hayashi ,  Tomoya Tsukioka ,  Yoshikazu Takeuchi

IPC: H01J1/00

CPC classification number: H01L33/38 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05552 ,  H01L2224/0556 ,  H01L2224/05599 ,  H01L2224/06051 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A light emitting device comprises a rectangular element mounted upon a mounting substrate via a heat-melted connecting material, wherein second substrate electrodes are formed conforming to the recesses of a first substrate electrode and a portion of the outer periphery of the first and second substrate electrodes is provided with first extended sections that extend farther outward than the outer periphery of the aforementioned element. The aforementioned first extended sections are formed in at least one or more locations per one side of the outer periphery of the aforementioned rectangular element; the aforementioned first substrate electrode is provided with second extended sections that are formed on at least one of both ends of the aforementioned recesses flanking the first extended sections of the aforementioned second substrate electrodes; and the aforementioned second extended sections extend farther outward than the outer periphery of the aforementioned element.

Abstract translation: 发光装置包括通过热熔融的连接材料安装在安装基板上的矩形元件，其中第二基板电极形成为符合第一基板电极的凹部和第一和第二基板电极的外周的一部分 设置有比上述元件的外周更向外延伸的第一延伸部。 上述第一延伸部分形成在上述矩形元件的外周的每一侧的至少一个或多个位置上; 上述第一基板电极设置有第二延伸部分，其形成在前述第二基板电极的第一延伸部分侧面的上述凹部的两端中的至少一个上; 并且上述第二延伸部分比上述元件的外周更向外延伸。

公开(公告)号：US08614139B2

公开(公告)日：2013-12-24

申请号：US13415524

申请日：2012-03-08

Applicant: Yuichiro Shishido ,  Takeshi Matsumura

Inventor： Yuichiro Shishido ,  Takeshi Matsumura

IPC: H01L21/46

CPC classification number: H01L21/6836 ,  B32B7/02 ,  B32B7/12 ,  B32B27/20 ,  B32B27/281 ,  B32B27/36 ,  B32B27/365 ,  B32B2457/14 ,  C09J7/385 ,  C09J2203/326 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/27436 ,  H01L2224/2929 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29386 ,  H01L2224/29388 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/85 ,  H01L2224/9205 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10T428/1467 ,  Y10T428/1471 ,  Y10T428/24802 ,  Y10T428/24942 ,  H01L2224/27 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/3512 ,  H01L2924/00012

Abstract: The present invention provides a dicing film with a protecting film that enables to paste a dicing film to a semiconductor wafer without a shift in position while reducing a downtime. There is provided a dicing film with a protecting film in which a dicing film and a protecting film are laminated, wherein the difference between the transmittance of the protecting film and the transmittance of the dicing film with a protecting film at a portion of the dicing film where light for detecting a film transmits first is 20% or more in a wavelength of 600 to 700 nm.

Abstract translation: 本发明提供一种具有保护膜的切割膜，其能够将切割膜粘贴到半导体晶片而不会发生位置偏移，同时减少停机时间。 提供了一种具有保护膜的切割膜，其中层压有切割膜和保护膜，其中保护膜的透射率与切割膜部分之间的保护膜的切割膜的透射率之间的差异 其中首先检测膜的光在600〜700nm的波长下为20％以上。

公开(公告)号：US08610269B2

公开(公告)日：2013-12-17

申请号：US13379273

申请日：2010-06-23

Applicant: Kenji Nanba

Inventor： Kenji Nanba

IPC: H01L23/485

CPC classification number: H01L24/11 ,  H01L23/3157 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/10126 ,  H01L2224/11424 ,  H01L2224/11464 ,  H01L2224/1184 ,  H01L2224/11845 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/27416 ,  H01L2224/27515 ,  H01L2224/2784 ,  H01L2224/27845 ,  H01L2224/29011 ,  H01L2224/29018 ,  H01L2224/29022 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81801 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/83855 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/0105 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/3512 ,  H01L2924/00

Abstract: [Problem] A semiconductor device which achieves a fine pitch, a high throughput and a high connection reliability, especially in flip-chip mounting is provided. A method for manufacturing the semiconductor device and a circuit device using the semiconductor device are also provided.[Means for solving the problem] The semiconductor device has: an electrode; an insulating part having an opening on the electrode; a protruding part formed on the electrode; a protecting part which is formed at the periphery of the protruding part and electrically isolates the protruding part; and a bonding part which is formed on the protecting part by being spaced apart from the protruding part. An upper surface of the protruding part, an upper surface of the protecting part, and an upper surface of the bonding part form the same plane.

Abstract translation: [问题]提供了一种实现细间距，高吞吐量和高连接可靠性的半导体器件，特别是在倒装芯片安装中。 还提供了一种用于制造半导体器件的方法和使用该半导体器件的电路器件。 [解决问题的手段]半导体器件具有：电极; 在所述电极上具有开口的绝缘部; 形成在所述电极上的突出部; 保护部，其形成在突出部的周围，并且使突出部电隔离; 以及通过与所述突出部分间隔开地形成在所述保护部上的接合部。 突出部的上表面，保护部的上表面和接合部的上表面形成同一平面。

公开(公告)号：US08604597B2

公开(公告)日：2013-12-10

申请号：US13096634

申请日：2011-04-28

Applicant: Hunt Hang Jiang

Inventor： Hunt Hang Jiang

IPC: H01L23/495

CPC classification number: H01L23/49575 ,  H01L23/3107 ,  H01L23/49572 ,  H01L23/49816 ,  H01L23/525 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16245 ,  H01L2224/17165 ,  H01L2224/48227 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

Abstract: The present technology discloses a multi-die package. The package comprises a lead frame structure and three dies including a first flip chip die, a second flip chip die and a third flip chip die stacked vertically. The first flip chip die is mounted on the bottom surface of the lead frame structure through the flip chip bumps; the second flip chip is mounted on the top surface of the first flip chip die through flip chip bumps; and the third flip chip die is mounted on the top surface of the lead frame structure through flip chip bumps.

Abstract translation: 本技术公开了一种多管芯封装。 封装包括引线框架结构和三个管芯，其包括垂直堆叠的第一倒装芯片管芯，第二倒装芯片管芯和第三倒装芯片管芯。 第一倒装芯片通过倒装芯片凸块安装在引线框架结构的底表面上; 第二倒装芯片通过倒装芯片凸块安装在第一倒装芯片的顶表面上; 并且第三倒装芯片裸片通过倒装芯片凸块安装在引线框架结构的顶表面上。

公开(公告)号：US08586414B2

公开(公告)日：2013-11-19

申请号：US12968159

申请日：2010-12-14

Applicant: Yan Xun Xue ,  Yueh-Se Ho ,  Hamza Yilmaz ,  Anup Bhalla ,  Jun Lu ,  Kal Liu

Inventor： Yan Xun Xue ,  Yueh-Se Ho ,  Hamza Yilmaz ,  Anup Bhalla ,  Jun Lu ,  Kal Liu

IPC: H01L21/00

CPC classification number: H01L23/49562 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/49524 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor package and it manufacturing method includes a lead frame having a die pad, and a source lead with substantially a V groove disposed on a top surface. A semiconductor chip disposed on the die pad. A metal plate connected to a top surface electrode of the chip having a bent extension terminated in the V groove in contact with at least one of the V groove sidewalls.

Abstract translation: 半导体封装及其制造方法包括具有管芯焊盘的引线框架和设置在顶表面上的大致V形槽的源极引线。 设置在芯片焊盘上的半导体芯片。 连接到芯片的顶表面电极的金属板具有在V沟槽中终止的弯曲延伸部，与V沟槽侧壁中的至少一个接触。

公开(公告)号：US08575749B2

公开(公告)日：2013-11-05

申请号：US13525734

申请日：2012-06-18

Applicant: Shinya Tsujimoto

Inventor： Shinya Tsujimoto

IPC: H01L21/60

CPC classification number: H01L24/11 ,  H01L21/563 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/03474 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/0508 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05557 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/11009 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81002 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2224/05155 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor chip, an electrode pad formed on the semiconductor chip, an underlying barrier metal formed on the electrode pad, a solder bump formed on the underlying barrier metal, and an underfill material surrounding the underlying barrier metal and the solder bump. A junction interface of the solder bump with the underlying barrier metal corresponds to an upper surface of the underlying barrier metal, and a portion of the underfill material bonded to a side surface of the solder bump and an end surface of the underlying barrier metal forms a right angle or an obtuse angle.

Abstract translation: 半导体器件包括半导体芯片，形成在半导体芯片上的电极焊盘，形成在电极焊盘上的下面的阻挡金属，形成在下面的阻挡金属上的焊料凸块，以及围绕下面的阻挡金属和焊料凸块的底部填充材料 。 焊料凸块与下面的阻挡金属的接合界面对应于下面的阻挡金属的上表面，并且底部填充材料的结合到焊料凸块的侧表面的一部分和下面的阻挡金属的端面形成一个 直角或钝角。

公开(公告)号：US08531034B2

公开(公告)日：2013-09-10

申请号：US13244506

申请日：2011-09-25

Applicant: Hak-Kyoon Byun ,  Dae-Young Choi ,  Mi-Yeon Kim

Inventor： Hak-Kyoon Byun ,  Dae-Young Choi ,  Mi-Yeon Kim

IPC: H01L23/48

CPC classification number: H01L23/49827 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17179 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor package and a package on package are provided. The semiconductor package includes a substrate; a semiconductor chip attached to a surface of the substrate; connecting conductors disposed on the surface of the substrate; a mold formed on the substrate and in which the connecting conductors and the semiconductor chip are provided; and connecting via holes extending through the mold and exposing the connecting conductors. With respect to a first connecting via hole of the connecting via holes, a planar distance between a first connecting conductor exposed by the first connecting via hole and an entrance of the first connecting via hole is not uniform.

公开(公告)号：US20130221540A1

公开(公告)日：2013-08-29

申请号：US13858198

申请日：2013-04-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Stephan Kronholz ,  Markus Lenski ,  Ralf Richter

IPC: H01L23/522

CPC classification number: H01L23/5226 ,  H01L21/8221 ,  H01L23/53276 ,  H01L27/0688 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/80001

Abstract: In a stacked chip configuration, the “inter chip” connection is established on the basis of functional molecules, thereby providing a fast and space-efficient communication between the different semiconductor chips.

Abstract translation: 在堆叠式芯片配置中，基于功能分子建立“芯片间”连接，从而在不同半导体芯片之间提供快速且空间有效的通信。

公开(公告)号：US20130196471A1

公开(公告)日：2013-08-01

申请号：US13799168

申请日：2013-03-13

Applicant: Palo Alto Research Center Incorporated

Inventor： Christopher L. Chua ,  Bowen Cheng ,  Eugene M. Chow ,  Dirk De Bruyker

IPC: H01L21/50

CPC classification number: H01L21/50 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05599 ,  H01L2224/1111 ,  H01L2224/11334 ,  H01L2224/13005 ,  H01L2224/13016 ,  H01L2224/13027 ,  H01L2224/16105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/81903 ,  H01L2224/83193 ,  H01L2224/83855 ,  H01L2224/83859 ,  H01L2224/83874 ,  H01L2224/83885 ,  H01L2224/9211 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/0132 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  H05K3/321 ,  H05K3/4015 ,  H05K2201/0311 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2924/01015 ,  H01L2924/01049 ,  H01L2924/01031 ,  H01L2224/13599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A method includes providing a pad chip having contact pads, providing a spring chip having micro-springs, applying a chemical activator to one of either the pad chip or the spring chip, applying an adhesive responsive to the chemical activator on the other of the pad chip or the spring chip, aligning the pad chip to the spring chip such that the micro-springs will contact the contact pads, and pressing the pad chip and the spring chip together such that the chemical activator at least partially cures the adhesive.

Abstract translation: 一种方法包括提供具有接触焊盘的焊盘芯片，提供具有微弹簧的弹簧芯片，将化学活化剂施加到衬垫芯片或弹簧芯片中的一个上，在衬垫的另一个上施加响应于化学活化剂的粘合剂 芯片或弹簧芯片，将焊盘芯片对准弹簧芯片，使得微弹簧将接触接触焊盘，并将焊盘芯片和弹簧芯片压在一起，使得化学活化器至少部分地固化粘合剂。

公开(公告)号：US08492891B2

公开(公告)日：2013-07-23

申请号：US12765250

申请日：2010-04-22

Applicant: Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Jacky Chang ,  Chung-Shi Liu ,  Chen-Hua Yu

Inventor： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Jacky Chang ,  Chung-Shi Liu ,  Chen-Hua Yu

IPC: H01L23/48

CPC classification number: H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0346 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11906 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/13455 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A copper pillar bump has a sidewall protection layer formed of an electrolytic metal layer. The electrolytic metal layer is an electrolytic nickel layer, an electrolytic gold layer, and electrolytic copper layer, or an electrolytic silver layer.

Abstract translation: 铜柱凸起具有由电解金属层形成的侧壁保护层。 电解金属层是电解镍层，电解金层，电解铜层或电解银层。