专利检索 ap:("Yasoo Harada" OR "Shigeharu Matsushita" OR "Satoshi Terada" OR "Emi Fujii" OR "Takashi Kurose" OR "Takayoshi Higashino" OR "Takashi Yamada" OR "Akihito Nagamatsu" OR "Daijirou Inoue" OR "Kouji Matsumura") AND inv:"Takashi Yamada" 第 1 页

1.

发明授权
Method of doping, semiconductor device, and method of fabricating semiconductor device 失效
标题翻译：掺杂方法，半导体器件和制造半导体器件的方法

公开(公告)号：US5557141A

公开(公告)日：1996-09-17

申请号：US220542

申请日：1994-03-30

申请人： Yasoo Harada , Shigeharu Matsushita , Satoshi Terada , Emi Fujii , Takashi Kurose , Takayoshi Higashino , Takashi Yamada , Akihito Nagamatsu , Daijirou Inoue , Kouji Matsumura

发明人： Yasoo Harada , Shigeharu Matsushita , Satoshi Terada , Emi Fujii , Takashi Kurose , Takayoshi Higashino , Takashi Yamada , Akihito Nagamatsu , Daijirou Inoue , Kouji Matsumura

IPC分类号： H01L21/18 , H01L21/22 , H01L21/225 , H01L21/285 , H01L21/314 , H01L21/324 , H01L21/329 , H01L21/335 , H01L21/338 , H01L21/8252 , H01L27/06 , H01L29/08 , H01L29/10 , H01L29/66 , H01L29/775 , H01L29/778 , H01L29/812 , H01L29/8605 , H01L23/58 , H01L29/00 , H01L29/06 , H01L31/0328

CPC分类号： B82Y10/00 , H01L21/22 , H01L21/2258 , H01L21/28587 , H01L21/28593 , H01L21/3144 , H01L21/3245 , H01L21/8252 , H01L27/0605 , H01L29/0891 , H01L29/1025 , H01L29/66075 , H01L29/66196 , H01L29/66462 , H01L29/66469 , H01L29/66856 , H01L29/66871 , H01L29/66878 , H01L29/66977 , H01L29/775 , H01L29/7787 , H01L29/812 , H01L29/8122 , H01L29/8605 , Y10S148/034 , Y10S438/962

摘要： A group III-V compound semiconductor doped with an impurity, having an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed on a crystal of Group III-V compound semiconductor in which the silicon in the SiOx film is diffused into the Group III-V compound semiconductor, thereby forming a doped layer.

摘要翻译： 在III-V族化合物半导体的晶体上形成掺杂有杂质的III-V族化合物半导体的晶体，具有SiO x的未掺杂膜和防止V族原子扩散的膜（例如SiN膜） SiO x膜中的硅扩散到III-V族化合物半导体中，从而形成掺杂层。

2.

发明授权
Method of doping a group III-V compound semiconductor 失效
标题翻译：掺杂III-V族化合物半导体的方法

公开(公告)号：US5350709A

公开(公告)日：1994-09-27

申请号：US75232

申请日：1993-06-10

申请人： Yasoo Harada , Shigeharu Matsushita , Satoshi Terada , Emi Fujii , Takashi Kurose , Takayoshi Higashino , Takashi Yamada , Akihito Nagamatsu , Daijirou Inoue , Kouji Matsumura

发明人： Yasoo Harada , Shigeharu Matsushita , Satoshi Terada , Emi Fujii , Takashi Kurose , Takayoshi Higashino , Takashi Yamada , Akihito Nagamatsu , Daijirou Inoue , Kouji Matsumura

IPC分类号： H01L21/18 , H01L21/22 , H01L21/225 , H01L21/285 , H01L21/314 , H01L21/324 , H01L21/329 , H01L21/335 , H01L21/338 , H01L21/8252 , H01L27/06 , H01L29/08 , H01L29/10 , H01L29/66 , H01L29/775 , H01L29/778 , H01L29/812 , H01L29/8605

CPC分类号： B82Y10/00 , H01L21/22 , H01L21/2258 , H01L21/28587 , H01L21/28593 , H01L21/3144 , H01L21/3245 , H01L21/8252 , H01L27/0605 , H01L29/0891 , H01L29/1025 , H01L29/66075 , H01L29/66196 , H01L29/66462 , H01L29/66469 , H01L29/66856 , H01L29/66871 , H01L29/66878 , H01L29/66977 , H01L29/775 , H01L29/7787 , H01L29/812 , H01L29/8122 , H01L29/8605 , Y10S148/034 , Y10S438/962

摘要： A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semiconductor, the sample is subjected to at least one heat treatment to cause silicon in the SiOx film to diffuse into the Group III-V compound semiconductor, thereby forming a doped layer. Using this doped layer forming method, field-effect transistors, diodes, resistive layers, two-dimensional electron gas or one-dimensional quantum wires, zero-dimensional quantum boxes, electron wave interference devices, etc. are fabricated.

摘要翻译： 掺杂III-V族化合物半导体与杂质的方法，其中在未掺杂的SiOx膜和用于防止V族原子扩散的膜（例如，SiN膜）之后，依次形成在组的晶体上 III-V族化合物半导体，对该样品进行至少一次热处理以使SiOx膜中的硅扩散到III-V族化合物半导体中，从而形成掺杂层。使用这种掺杂层形成方法，制造场效应晶体管，二极管，电阻层，二维电子气或一维量子线，零维量子箱，电子波干涉装置等。

3.

发明授权
Method of fabricating MMIC semiconductor integrated circuits using the RF and DC measurements of an active device on a substrate to design the passive elements, which are then E-beam written to the substrate 失效
标题翻译：使用基板上的有源器件的RF和DC测量来制造MMIC半导体集成电路以设计无源元件的方法，然后将无源元件电子束写入衬底

公开(公告)号：US5051373A

公开(公告)日：1991-09-24

申请号：US461356

申请日：1990-01-05

申请人： Takashi Yamada , Akihito Nagamatsu , Seiichi Bamba , Tetsuro Sawai , Haruo Nakano , Kimihiko Nagami

发明人： Takashi Yamada , Akihito Nagamatsu , Seiichi Bamba , Tetsuro Sawai , Haruo Nakano , Kimihiko Nagami

IPC分类号： H01L21/822 , G06F17/50 , H01L21/338 , H01L21/82 , H01L21/8252 , H01L27/04 , H01L29/778 , H01L29/812 , H01P3/08 , H01P5/08 , H01P11/00 , H03F3/60

CPC分类号： H01L21/8252

摘要： An active device such as an HEMT is formed on a GaAs substrate, and characteristics of this active device formed are measured. A circuit pattern of a passive circuit device including a serial microstrip line is simulated on the basis of the results of this measurement, and a circuit pattern obtained by the simulation is directly drawn on a substrate to form the passive circuit device, thereby to fabricate an MMIC. Accordingly, the passive circuit device is formed in conformity with the characteristics of the active device for each chip.As a result, the variation in characteristics of the active device is canceled, to obtain an MMIC superior in matching.

摘要翻译： 在GaAs衬底上形成诸如HEMT的有源器件，并且测量形成的该有源器件的特性。基于该测量的结果，模拟包括串行微带线的无源电路装置的电路图案，并且将通过仿真获得的电路图案直接绘制在基板上以形成无源电路装置，从而制造 MMIC。因此，根据每个芯片的有源器件的特性，形成无源电路器件。结果，有源器件的特性的变化被消除，以获得匹配的MMIC优越性。

4.

发明授权
Advanced-format optical modulator with low power consumption and low-loss characteristics 有权
标题翻译：高级格式的光调制器具有低功耗和低损耗特性

公开(公告)号：US08965146B2

公开(公告)日：2015-02-24

申请号：US13381298

申请日：2010-07-09

申请人： Takashi Goh , Yoshiyuki Doi , Shinji Mino , Ken Tsuzuki , Hiroshi Yamazaki , Takashi Yamada

发明人： Takashi Goh , Yoshiyuki Doi , Shinji Mino , Ken Tsuzuki , Hiroshi Yamazaki , Takashi Yamada

IPC分类号： G02F1/035 , G02F1/03 , G02F1/225 , G02B6/12

CPC分类号： G02F1/0327 , G02B2006/12142 , G02B2006/12159 , G02F1/225 , G02F2201/126 , G02F2203/20 , G02F2203/21

摘要： In a nest MZI modulator in which each arm includes a child MZI, the power consumption is reduced. The hybrid integrated-type nest MZI modulator of the embodiment 1a is configured so that, instead of placing a relative phase adjusting section in a parent MZI, a bias electrode Bias 90° in which an electric field is applied in the same direction to the polarization direction in both of the upper and lower arms is placed in each child MZI (see FIG. 4B). The bias electrode Bias 90° provided in each child MZI constitute the entirety of a relative phase adjusting section. The optical signals are subjected to a phase change after the output from the child MZI (see FIG. 1A), because such relative phase adjusting section can subject the optical signals of the upper and lower arms of the child MZI to a shift change in the same direction, respectively.

摘要翻译： 在其中每个臂包括儿童MZI的巢MZI调制器中，功耗降低。实施例1a的混合集成型嵌套MZI调制器被配置为使得不是将相对相位调整部分放置在母MZI中，而是将偏置电极偏置90°，其中向与极化相同的方向施加电场将上臂和下臂两者的方向放置在每个子MZI中（参见图4B）。每个子MZI中设置的偏置电极偏置90°构成相对相位调整部的整体。在从子MZI（参见图1A）的输出之后，光信号经受相变，因为这种相对相位调整部分可以使子MZI的上臂和下臂的光信号在相同方向。

5.

发明申请
CHARGING DEVICE 审中-公开
标题翻译：充电设备

公开(公告)号：US20140015496A1

公开(公告)日：2014-01-16

申请号：US13933458

申请日：2013-07-02

申请人： Tadao Nishiguchi , Takashi Yamada , Hideyuki Yasugi , Masayuki Hanatani , Yusaku Ido

发明人： Tadao Nishiguchi , Takashi Yamada , Hideyuki Yasugi , Masayuki Hanatani , Yusaku Ido

IPC分类号： H02J7/00

CPC分类号： H02J7/007 , H02J7/022 , H02M1/42 , H02M3/33507 , H02M2001/007 , H02M2001/4291 , Y02B40/90 , Y02B70/12 , Y02B70/126

摘要： A charging device has an AC power supply input part that rectifies an AC voltage, a power factor correction part that converts a rectified voltage outputted from the AC power supply input part into a DC intermediate voltage, a power conversion part that converts the intermediate voltage outputted from the power factor correction part into a charge voltage, and supplies the charge voltage to a secondary battery, an input voltage acquisition unit that acquires the rectified voltage outputted from the AC power supply input part, an output voltage acquisition unit that acquires the charge voltage outputted from the power conversion part, and a storage part in which the rectified voltage, the charge voltage, and a target intermediate voltage correlated with the rectified voltage and charge voltage are stored.

摘要翻译： 充电装置具有对交流电压进行整流的交流电源输入部，将从交流电源输入部输出的整流电压转换为直流中间电压的功率因数校正部，转换输出的中间电压的功率转换部从功率因数校正部变为充电电压，并将充电电压提供给二次电池，获取从交流电源输入部输出的整流电压的输入电压获取单元，获取充电电压的输出电压获取单元以及存储与整流电压和充电电压相关的整流电压，充电电压和目标中间电压的存储部。

6.

发明申请
VEHICLE POWER-SUPPLY CONTROL DEVICE 有权
标题翻译：车辆电源控制装置

公开(公告)号：US20130334879A1

公开(公告)日：2013-12-19

申请号：US13917089

申请日：2013-06-13

申请人： Yusaku Ido , Takashi Yamada , Tadao Nishiguchi , Hideyuki Yasugi , Masayuki Hanatani

发明人： Yusaku Ido , Takashi Yamada , Tadao Nishiguchi , Hideyuki Yasugi , Masayuki Hanatani

IPC分类号： B60R16/033

CPC分类号： B60R16/033 , B60L1/00 , B60L1/003 , B60L1/14 , B60L11/1805 , B60L11/1816 , B60L11/1824 , B60L11/1868 , B60L2210/10 , B60L2210/30 , Y02T10/7005 , Y02T10/7066 , Y02T10/7072 , Y02T10/7216 , Y02T10/7241 , Y02T10/92 , Y02T90/121 , Y02T90/127 , Y02T90/14

摘要： A vehicle power-supply control device has a battery charger that converts an externally-supplied AC voltage into a DC voltage used to charge a vehicle high-voltage battery, a low-voltage power generator that converts the DC voltage output from the battery charger into a DC voltage used to drive a vehicle auxiliary machine, and a controller that controls the battery charger and the low-voltage power generator. The battery charger includes a power factor correction circuit that corrects a power factor of the AC voltage and a first DC/DC converter that generates a predetermined DC voltage based on an output of the power factor correction circuit. The low-voltage power generator includes a second DC/DC converter that steps down the DC voltage output from the battery charger and a synchronous rectifier that rectifies an output of the second DC/DC converter in synchronization with a switching operation of the second DC/DC converter.

摘要翻译： 车辆电源控制装置具有将外部供给的交流电压转换成用于对车辆用高压电池充电的直流电压的电池充电器，将从电池充电器输出的直流电压转换为低压电力的低压发电机用于驱动车辆辅助机器的DC电压，以及控制电池充电器和低压发电机的控制器。电池充电器包括校正AC电压的功率因数的功率因数校正电路和基于功率因数校正电路的输出产生预定DC电压的第一DC / DC转换器。低压发电机包括：第二DC / DC转换器，其降低从电池充电器输出的直流电压;以及同步整流器，其与第二DC / DC转换器的开关操作同步地整流第二DC / DC转换器的输出; DC转换器。

7.

发明授权
Copper alloy bonding wire for semiconductor device 有权
标题翻译：用于半导体器件的铜合金接合线

公开(公告)号：US08610291B2

公开(公告)日：2013-12-17

申请号：US11848403

申请日：2007-08-31

申请人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada

发明人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada

IPC分类号： H01L23/48 , H01L23/52 , H01L29/40

CPC分类号： H01L24/85 , B23K35/302 , B23K2103/12 , C22C9/00 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/05639 , H01L2224/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45647 , H01L2224/45663 , H01L2224/45687 , H01L2224/45693 , H01L2224/48227 , H01L2224/48247 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/85205 , H01L2224/85439 , H01L2224/85444 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/10253 , H01L2924/20752 , H01L2924/20755 , H01L2924/20756 , H01L2924/01008 , H01L2924/01004 , H01L2924/01013 , H01L2924/01025 , H01L2924/01039 , H01L2924/00015 , H01L2924/00 , H01L2924/013 , H01L2924/00014 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01055 , H01L2924/00013

摘要： The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.

摘要翻译： 本发明提供了一种廉价的材料成本的半导体器件铜合金接合线，确保了优异的球接合形状，线接合特性等，并且具有良好的环形成特性，并且具有优异的批量生产率。半导体装置铜合金接合线含有总共10〜700质量ppm的Mg和P中的至少一种，氧在6〜30质量ppm的范围内。

8.

发明授权
Bonding wire for semiconductor devices 有权
标题翻译：半导体器件用接合线

公开(公告)号：US08389860B2

公开(公告)日：2013-03-05

申请号：US12669612

申请日：2008-12-03

申请人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada

发明人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada

IPC分类号： H01B5/00 , H01B7/18 , H01B9/02

CPC分类号： C22C5/02 , B23K35/0222 , B23K35/302 , C22C5/04 , C22C5/06 , C22C9/00 , C22C9/01 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/45683 , H01L2224/48011 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48486 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/3025 , H01L2924/01004 , H01L2924/01001 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00015 , H01L2924/01202 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20655 , H01L2924/20656 , H01L2924/20658 , H01L2224/48227 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/00014 , H01L2924/0104 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006

摘要： A bonding wire for semiconductor devices includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of orientations in crystalline orientations in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the orientations have an angular difference relative to the wire lengthwise direction. The angular difference is within 15 degrees.

摘要翻译： 用于半导体器件的接合线包括由导电金属形成的芯部件和主要由不同于芯部件的面心立方金属形成在其上的表皮层。在皮肤层表面的晶面处的线长度方向上的取向<100 <方向<100>的取向比大于或等于50％，并且<100>取向具有相对的角度差到电线长度方向。角度差在15度以内。

9.

发明申请
FLUID MIXER AND APPARATUS USING FLUID MIXER 有权
标题翻译：流体混合器和使用流体混合器的装置

公开(公告)号：US20120307589A1

公开(公告)日：2012-12-06

申请号：US13577381

申请日：2010-12-21

申请人： Toshihiro Hanada , Takashi Yamada

发明人： Toshihiro Hanada , Takashi Yamada

IPC分类号： B01F5/06

CPC分类号： B01F5/0646 , B01F3/0861 , B01F5/0647 , B01F5/0656 , B01F5/0657 , B01F2003/0896

摘要： A fluid mixer includes a main flow path comprised of a first flow path and a second flow path, spiral flow paths formed around the second flow path in shapes substantially concentric with the second flow path and offset in position from each other in a circumferential direction, the spiral flow paths having first ends communicated with the first flow path, branch flow paths branched from a plurality of locations of the second flow path in a flow direction, the branch flow paths being communicated with the spiral flow paths at a plurality of locations of the spiral flow paths in the flow direction, a fluid inlet at an open end of either of the first flow path and the second flow path, and a fluid outlet at an open end of the other of the first flow path and the second flow path.

摘要翻译： 流体混合器包括由第一流动路径和第二流动路径构成的主流路，围绕第二流动路径形成的大致与第二流动路径同心的形状和在圆周方向上彼此偏移的形状的螺旋流动路径，所述螺旋流路具有与所述第一流路连通的第一端，在流动方向上从所述第二流路的多个位置分支的分支流路，所述分支流路与所述螺旋流路连通，所述多个位置在流动方向上的螺旋流动路径，在第一流动路径和第二流动路径中的任一个的开口端处的流体入口以及在第一流动路径和第二流动路径中的另一个的开口端处的流体出口。