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91.发明申请Semiconductor Device and Method of Mounting Pre-Fabricated Shielding Frame over Semiconductor Die 有权半导体器件和半导体模具预制屏蔽框架的安装方法公开(公告)号：US20100237477A1
公开(公告)日：2010-09-23
申请号：US12409142
申请日：2009-03-23
IPC分类号： H01L23/552 , H01L21/56 , H01L21/50
CPC分类号： H01L23/5389 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3121 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L23/552 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/96 , H01L24/97 , H01L25/105 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/32225 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/73267 , H01L2224/97 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2225/1094 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15174 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a pre-fabricated shielding frame mounted over a sacrificial substrate and semiconductor die. An encapsulant is deposited through an opening in the shielding frame around the semiconductor die. A first portion of the shielding frame to expose the encapsulant. Removing the first portion also leaves a second portion of the shielding frame over the semiconductor die as shielding from interference. A third portion of the shielding frame around the semiconductor die provides a conductive pillar. A first interconnect structure is formed over a first side of the encapsulant, shielding frame, and semiconductor die. The sacrificial substrate is removed. A second interconnect structure over the semiconductor die and a second side of the encapsulant. The shielding frame can be connected to low-impedance ground point through the interconnect structures or TSV in the semiconductor die to isolate the die from EMI and RFI, and other inter-device interference.
摘要翻译： 半导体器件包括安装在牺牲衬底和半导体管芯上的预制屏蔽框架。 通过围绕半导体管芯的屏蔽框架中的开口沉积密封剂。 屏蔽框架的第一部分以露出密封剂。 移除第一部分还将屏蔽框架的第二部分留在半导体管芯上，作为屏蔽不受干扰。 围绕半导体管芯的屏蔽框架的第三部分提供导电柱。 在密封剂，屏蔽框架和半导体管芯的第一侧上形成第一互连结构。 去除牺牲衬底。 半导体管芯上的第二互连结构和密封剂的第二侧。 屏蔽框架可以通过半导体芯片中的互连结构或TSV连接到低阻抗接地点，以将裸片与EMI和RFI以及其他器件间干扰隔离。
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92.发明申请Semiconductor Device and Method of Forming Bond Wires and Stud Bumps in Recessed Region of Peripheral Area Around the Device for Electrical Interconnection to Other Devices 有权半导体器件和在其他器件电互连的器件周围的外围区域的嵌入区域中形成接合线和螺柱凸起的方法公开(公告)号：US20100140783A1
公开(公告)日：2010-06-10
申请号：US12329800
申请日：2008-12-08
申请人： Byung Tai Do , Reza A. Pagaila , Linda Pei Ee Chua
发明人： Byung Tai Do , Reza A. Pagaila , Linda Pei Ee Chua
CPC分类号： H01L23/4952 , H01L21/6835 , H01L21/6836 , H01L23/3107 , H01L23/3185 , H01L23/49541 , H01L24/05 , H01L24/16 , H01L24/29 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2221/68327 , H01L2221/68372 , H01L2224/02333 , H01L2224/03 , H01L2224/0401 , H01L2224/04042 , H01L2224/056 , H01L2224/1134 , H01L2224/1308 , H01L2224/16 , H01L2224/29111 , H01L2224/29144 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/4848 , H01L2224/48992 , H01L2224/49111 , H01L2224/49433 , H01L2224/73265 , H01L2224/83805 , H01L2224/85001 , H01L2224/85051 , H01L2224/85951 , H01L2224/85986 , H01L2225/06506 , H01L2225/0651 , H01L2225/06513 , H01L2225/06551 , H01L2225/1023 , H01L2225/1035 , H01L2225/1058 , H01L2225/1088 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/05042 , H01L2924/12041 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19107 , H01L2924/30105 , H01L2224/85186 , H01L2924/00 , H01L2924/00012 , H01L2924/0665 , H01L2224/45099 , H01L2224/4554
摘要： A semiconductor wafer contains a plurality of semiconductor die each having a peripheral area around the die. A recessed region with angled or vertical sidewall is formed in the peripheral area. A conductive layer is formed in the recessed region. A first stud bump is formed over a contact pad of the semiconductor die. A second stud bump is formed over the first conductive layer within the recessed region. A bond wire is formed between the first and second stud bumps. A third stud bump is formed over the bond wire and first stud bump. A dicing channel partially formed through the peripheral area. The semiconductor wafer undergoes backgrinding to the dicing channel to singulate the semiconductor wafer and separate the semiconductor die. The semiconductor die can be disposed in a semiconductor package with other components and electrically interconnected through the bond wire and stud bumps.
摘要翻译： 半导体晶片包含多个半导体管芯，每个半导体管芯具有围绕管芯的周边区域。 具有倾斜或垂直侧壁的凹陷区域形成在周边区域中。 在凹陷区域中形成导电层。 在半导体管芯的接触焊盘上形成第一螺柱凸块。 在凹陷区域内的第一导电层上方形成第二凸起凸块。 在第一和第二突起之间形成接合线。 在接合线和第一凸起凸起上形成第三个凸起凸块。 通过外围区域部分地形成的切割通道。 半导体晶片经历对切割通道的后研磨，以切割半导体晶片并分离半导体管芯。 半导体管芯可以配置在具有其它部件的半导体封装中，并且通过接合线和柱形凸起电互连。
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93.发明申请Semiconductor Device and Method of Forming Stepped-Down RDL and Recessed THV in Peripheral Region of the Device 有权半导体器件和在器件的外围区域中形成步进式RDL和嵌入式THV的方法公开(公告)号：US20100096731A1
公开(公告)日：2010-04-22
申请号：US12641958
申请日：2009-12-18
IPC分类号： H01L23/544 , H01L23/538
CPC分类号： H01L24/82 , H01L21/568 , H01L21/6835 , H01L23/3114 , H01L24/19 , H01L24/24 , H01L24/48 , H01L2221/68345 , H01L2224/0401 , H01L2224/04105 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/82001 , H01L2224/82039 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.
摘要翻译： 半导体管芯具有围绕管芯的周边区域。 在半导体管芯上形成绝缘层。 去除绝缘层和周边的一部分以在半导体管芯周围形成凹陷。 在绝缘层和凹槽上沉积导电层。 导电层电连接到半导体管芯上的接触焊盘，并符合入凹槽的步骤。 通过半导体管芯周围的导电层和周边区域产生间隙。 绝缘材料沉积在间隙中。 绝缘材料的一部分被去除以形成通孔（THV）。 导电材料沉积在THV中以形成导电THV。 导电THV相对于半导体管芯的表面凹陷。 导电THV与导电层电连接。
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公开(公告)号：US20090302445A1
公开(公告)日：2009-12-10
申请号：US12135830
申请日：2008-06-09
CPC分类号： H01L23/3121 , H01L21/568 , H01L23/3677 , H01L23/4334 , H01L24/19 , H01L24/48 , H01L24/82 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2224/04105 , H01L2224/05554 , H01L2224/12105 , H01L2224/32145 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/82001 , H01L2224/9222 , H01L2224/97 , H01L2225/06513 , H01L2225/06524 , H01L2225/06541 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10161 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/18162 , H01L2924/19041 , H01L2924/30105 , H01L2224/82 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor package includes a semiconductor die. Encapsulant is flowed around a portion of the semiconductor die. The encapsulant is etched and a conductive material is deposited into the etched portion of the encapsulant to form a thermally conductive structure. In one embodiment, a trench is etched into the encapsulant and a thermally conductive material is deposited into the trench to form a thermal channel. In alternative embodiments, thermally conductive through hole vias (THVs) are formed in the encapsulant. A thermally conductive pad may be formed over the semiconductor die to facilitate removal of heat energy from the hot spots of the semiconductor die. A thermally conductive trace is formed to interconnect the thermal channel and the thermally conductive pad. A heat sink may be deposited over the semiconductor package. The packages are singulated by cutting through the encapsulant or the thermal channel.
摘要翻译： 半导体封装包括半导体管芯。 封装剂围绕半导体管芯的一部分流动。 蚀刻密封剂，并且将导电材料沉积到密封剂的蚀刻部分中以形成导热结构。 在一个实施例中，沟槽被蚀刻到密封剂中，并且导热材料沉积到沟槽中以形成热通道。 在替代实施例中，在密封剂中形成导热通孔（THV）。 可以在半导体管芯上方形成导热焊盘，以便于从半导体管芯的热点去除热能。 形成导热迹线以互连热通道和导热焊盘。 散热器可以沉积在半导体封装上。 通过切割通过密封剂或热通道将包装分开。
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95.发明申请Semiconductor Device and Method of Shielding Semiconductor Die from Inter-Device Interference 有权半导体器件和半导体管芯从器件间干扰屏蔽的方法公开(公告)号：US20090302435A1
公开(公告)日：2009-12-10
申请号：US12133216
申请日：2008-06-04
申请人： Reza A. Pagaila , Byung Tai Do , Heap Hoe Kuan , Rui Huang
发明人： Reza A. Pagaila , Byung Tai Do , Heap Hoe Kuan , Rui Huang
IPC分类号： H01L23/552 , H01L21/50
CPC分类号： H01L21/568 , H01L21/561 , H01L23/3128 , H01L23/552 , H01L24/19 , H01L24/48 , H01L25/0652 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/05001 , H01L2224/05008 , H01L2224/05009 , H01L2224/05024 , H01L2224/05026 , H01L2224/05111 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05571 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/24137 , H01L2224/32225 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73257 , H01L2224/73259 , H01L2224/73265 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06541 , H01L2225/1023 , H01L2225/1052 , H01L2225/1058 , H01L2225/1088 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2924/19041 , H01L2924/19107 , H01L2924/3011 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A plurality of stacked semiconductor wafers each contain a plurality of semiconductor die. The semiconductor die each have a conductive via formed through the die. A gap is created between the semiconductor die. A conductive material is deposited in a bottom portion of the gap. An insulating material is deposited in the gap and over the semiconductor die. A portion of the insulating material in the gap is removed to form a recess between each semiconductor die extending to the conductive material. A shielding layer is formed over the insulating material and in the recess to contact the conductive material. The shielding layer isolates the semiconductor die from inter-device interference. A substrate is formed as a build-up structure on the semiconductor die adjacent to the conductive material. The conductive material electrically connects to a ground point in the substrate. The gap is singulating to separate the semiconductor die.
摘要翻译： 多个堆叠的半导体晶片各自包含多个半导体管芯。 半导体管芯每个都具有通过管芯形成的导电通孔。 在半导体管芯之间产生间隙。 导电材料沉积在间隙的底部。 绝缘材料沉积在间隙中并在半导体管芯上方。 间隙中的绝缘材料的一部分被去除以在延伸到导电材料的每个半导体管芯之间形成凹槽。 在绝缘材料之上和凹部中形成屏蔽层以接触导电材料。 屏蔽层将半导体管芯与器件间干扰隔离。 在与导电材料相邻的半导体管芯上形成基板作为堆积结构。 导电材料电连接到衬底中的接地点。 间隙是分离半导体管芯。
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96.发明申请公开(公告)号：US20090243045A1
公开(公告)日：2009-10-01
申请号：US12057199
申请日：2008-03-27
IPC分类号： H01L23/48 , H01L21/304
CPC分类号： H01L21/6835 , H01L21/568 , H01L23/3114 , H01L23/5389 , H01L24/12 , H01L24/13 , H01L24/19 , H01L24/25 , H01L24/28 , H01L24/81 , H01L24/94 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2221/68372 , H01L2224/02372 , H01L2224/0401 , H01L2224/04105 , H01L2224/05009 , H01L2224/0557 , H01L2224/12105 , H01L2224/13009 , H01L2224/13099 , H01L2224/16147 , H01L2224/16237 , H01L2224/19 , H01L2224/24011 , H01L2224/32145 , H01L2224/73267 , H01L2224/81141 , H01L2224/81191 , H01L2224/81801 , H01L2224/81894 , H01L2224/82039 , H01L2224/9202 , H01L2224/92244 , H01L2225/06551 , H01L2225/06558 , H01L2225/1035 , H01L2225/1058 , H01L2924/00014 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/09701 , H01L2924/12044 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2224/05552 , H01L2924/00 , H01L2224/83005
摘要： A semiconductor package includes a semiconductor die having a contact pad formed over a top surface of the semiconductor die. The semiconductor die may include an optical device. In one embodiment, a second semiconductor die is deposited over the semiconductor die. The package includes an insulating material deposited around a portion of the semiconductor die. In one embodiment, the insulating material includes an organic material. A first through hole via (THV) is formed in the insulating material using a conductive material. The first THV may form a protrusion extending beyond a bottom surface of the semiconductor die opposite the top surface and be connected to a first semiconductor device. A redistribution layer (RDL) may be deposited over the semiconductor die. The RDL forms an electrical connection between the contact pad of the semiconductor die and the first THV.
摘要翻译： 半导体封装包括具有形成在半导体管芯的顶表面上的接触焊盘的半导体管芯。 半导体管芯可以包括光学器件。 在一个实施例中，在半导体管芯上沉积第二半导体管芯。 封装包括沉积在半导体管芯的一部分周围的绝缘材料。 在一个实施例中，绝缘材料包括有机材料。 使用导电材料在绝缘材料中形成第一贯通孔（THV）。 第一THV可以形成延伸超过半导体管芯的与顶表面相对的底表面并且连接到第一半导体器件的突起。 再分配层（RDL）可以沉积在半导体管芯上。 RDL在半导体管芯的接触焊盘和第一个THV之间形成电连接。
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97.发明授权Semiconductor device and method of shielding semiconductor die from inter-device interference 有权半导体器件和屏蔽半导体管芯与器件间干扰的方法公开(公告)号：US08648448B2
公开(公告)日：2014-02-11
申请号：US13339185
申请日：2011-12-28
申请人： Reza A. Pagaila , Byung Tai Do , Heap Kuan , Rui Huang
发明人： Reza A. Pagaila , Byung Tai Do , Heap Kuan , Rui Huang
IPC分类号： H01L23/552 , H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/568 , H01L21/561 , H01L23/3128 , H01L23/552 , H01L24/19 , H01L24/48 , H01L25/0652 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/05001 , H01L2224/05008 , H01L2224/05009 , H01L2224/05024 , H01L2224/05026 , H01L2224/05111 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05571 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/24137 , H01L2224/32225 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73257 , H01L2224/73259 , H01L2224/73265 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06541 , H01L2225/1023 , H01L2225/1052 , H01L2225/1058 , H01L2225/1088 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2924/19041 , H01L2924/19107 , H01L2924/3011 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A plurality of stacked semiconductor wafers each contain a plurality of semiconductor die. The semiconductor die each have a conductive via formed through the die. A gap is created between the semiconductor die. A conductive material is deposited in a bottom portion of the gap. An insulating material is deposited in the gap and over the semiconductor die. A portion of the insulating material in the gap is removed to form a recess between each semiconductor die extending to the conductive material. A shielding layer is formed over the insulating material and in the recess to contact the conductive material. The shielding layer isolates the semiconductor die from inter-device interference. A substrate is formed as a build-up structure on the semiconductor die adjacent to the conductive material. The conductive material electrically connects to a ground point in the substrate. The gap is singulating to separate the semiconductor die.
摘要翻译： 多个堆叠的半导体晶片各自包含多个半导体管芯。 半导体管芯每个都具有通过管芯形成的导电通孔。 在半导体管芯之间产生间隙。 导电材料沉积在间隙的底部。 绝缘材料沉积在间隙中并在半导体管芯上方。 间隙中的绝缘材料的一部分被去除以在延伸到导电材料的每个半导体管芯之间形成凹槽。 在绝缘材料之上和凹部中形成屏蔽层以接触导电材料。 屏蔽层将半导体管芯与器件间干扰隔离。 在与导电材料相邻的半导体管芯上形成基板作为堆积结构。 导电材料电连接到衬底中的接地点。 间隙是分离半导体管芯。
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98.发明授权Semiconductor device and method of forming interconnect structure and mounting semiconductor die in recessed encapsulant 有权形成互连结构并将半导体管芯安装在凹形密封剂中的半导体器件和方法公开(公告)号：US08558392B2
公开(公告)日：2013-10-15
申请号：US12780268
申请日：2010-05-14
申请人： Linda Pei Ee Chua , Byung Tai Do , Reza A. Pagaila
发明人： Linda Pei Ee Chua , Byung Tai Do , Reza A. Pagaila
IPC分类号： H01L29/40 , H01L23/495 , H01L21/00
CPC分类号： H01L25/0657 , H01L21/288 , H01L21/561 , H01L21/565 , H01L21/568 , H01L21/76879 , H01L21/76885 , H01L21/78 , H01L23/13 , H01L23/3114 , H01L23/3128 , H01L23/48 , H01L23/481 , H01L23/49811 , H01L23/49816 , H01L23/49838 , H01L23/52 , H01L23/5384 , H01L23/5389 , H01L23/552 , H01L24/17 , H01L24/19 , H01L24/82 , H01L24/96 , H01L24/97 , H01L25/03 , H01L25/50 , H01L29/40 , H01L2224/0401 , H01L2224/04105 , H01L2224/05111 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/12105 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/20 , H01L2224/2518 , H01L2224/2919 , H01L2224/32145 , H01L2224/32502 , H01L2224/48091 , H01L2224/48106 , H01L2224/48228 , H01L2224/73253 , H01L2224/73259 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06517 , H01L2225/06548 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2225/1088 , H01L2924/01004 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2224/82 , H01L2224/81 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device has conductive pillars formed over a carrier. A first semiconductor die is mounted over the carrier between the conductive pillars. An encapsulant is deposited over the first semiconductor die and carrier and around the conductive pillars. A recess is formed in a first surface of the encapsulant over the first semiconductor die. The recess has sloped or stepped sides. A first interconnect structure is formed over the first surface of the encapsulant. The first interconnect structure follows a contour of the recess in the encapsulant. The carrier is removed. A second interconnect structure is formed over a second surface of the encapsulant and first semiconductor die. The first and second interconnect structures are electrically connected to the conductive pillars. A second semiconductor die is mounted in the recess. A third semiconductor die is mounted over the recess and second semiconductor die.
摘要翻译： 半导体器件具有在载体上形成的导电柱。 第一半导体管芯安装在载体之间的导电柱之间。 密封剂沉积在第一半导体管芯和载体上并且围绕导电柱。 在第一半导体管芯上的密封剂的第一表面中形成凹部。 凹槽有倾斜或阶梯。 在密封剂的第一表面上形成第一互连结构。 第一互连结构遵循密封剂中的凹部的轮廓。 载体被移除。 在密封剂和第一半导体管芯的第二表面上形成第二互连结构。 第一和第二互连结构电连接到导电柱。 第二半导体管芯安装在凹槽中。 第三半导体管芯安装在凹槽和第二半导体管芯上。
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公开(公告)号：US08557639B2
公开(公告)日：2013-10-15
申请号：US13492646
申请日：2012-06-08
CPC分类号： H01L23/3121 , H01L21/568 , H01L23/3677 , H01L23/4334 , H01L24/19 , H01L24/48 , H01L24/82 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2224/04105 , H01L2224/05554 , H01L2224/12105 , H01L2224/32145 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/82001 , H01L2224/9222 , H01L2224/97 , H01L2225/06513 , H01L2225/06524 , H01L2225/06541 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10161 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/18162 , H01L2924/19041 , H01L2924/30105 , H01L2224/82 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor package includes a semiconductor die having contact pads. An encapsulant is disposed around the semiconductor die, and conductive vias are disposed in the encapsulant. Electrically conductive traces are disposed between the contact pads and conductive vias, a thermally conductive channel is disposed in the encapsulant separate from the conductive vias, and a thermally conductive layer is disposed over an area of heat generation of the semiconductor die. A thermally conductive trace is disposed between the thermally conductive layer and thermally conductive channel. The thermally conductive layer, thermally conductive trace, and thermally conductive channel are electrically isolated from the contact pads of the semiconductor die and the electrically conductive traces. The semiconductor package further comprises broad thermal traces disposed over the encapsulant, and a thermally conductive material interconnecting the broad thermal traces and the thermally conductive layer.
摘要翻译： 半导体封装包括具有接触焊盘的半导体管芯。 密封剂设置在半导体管芯周围，并且导电通孔设置在密封剂中。 导电迹线设置在接触焊盘和导电通孔之间，导热通道设置在与导电通孔分开的密封剂中，并且导热层设置在半导体管芯的发热区域上。 导热迹线设置在导热层和导热通道之间。 导热层，导热迹线和导热通道与半导体管芯和导电迹线的接触焊盘电隔离。 半导体封装还包括设置在密封剂上方的宽热痕迹，以及互连宽热导迹和导热层的导热材料。
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100.发明授权Semiconductor device and method of forming penetrable film encapsulant around semiconductor die and interconnect structure 有权在半导体芯片和互连结构周围形成可穿透膜密封剂的半导体器件和方法公开(公告)号：US08546193B2
公开(公告)日：2013-10-01
申请号：US12917629
申请日：2010-11-02
申请人： Byung Tai Do , Reza A. Pagaila , Linda Pei Ee Chua
发明人： Byung Tai Do , Reza A. Pagaila , Linda Pei Ee Chua
CPC分类号： H01L23/49811 , H01L21/561 , H01L21/568 , H01L23/3128 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/48 , H01L24/96 , H01L24/97 , H01L25/105 , H01L25/16 , H01L25/50 , H01L2224/02379 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/13024 , H01L2224/16225 , H01L2224/20 , H01L2224/48091 , H01L2224/73265 , H01L2224/96 , H01L2224/97 , H01L2225/1035 , H01L2225/1041 , H01L2225/1052 , H01L2225/1058 , H01L2225/107 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/18162 , H01L2924/3011 , H01L2224/19 , H01L2224/81 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has a plurality of bumps formed over a carrier. A semiconductor die is mounted to the carrier between the bumps. A penetrable film encapsulant layer having a base layer, first adhesive layer, and second adhesive layer is placed over the semiconductor die and bumps. The penetrable film encapsulant layer is pressed over the semiconductor die and bumps to embed the semiconductor die and bumps within the first and second adhesive layers. The first adhesive layer and second adhesive layer are separated to remove the base layer and first adhesive layer and leave the second adhesive layer around the semiconductor die and bumps. The bumps are exposed from the second adhesive layer. The carrier is removed. An interconnect structure is formed over the semiconductor die and second adhesive layer. A conductive layer is formed over the second adhesive layer electrically connected to the bumps.
摘要翻译： 半导体器件具有形成在载体上的多个凸块。 半导体管芯安装在凸块之间的载体上。 具有基层，第一粘合剂层和第二粘合剂层的可穿透膜包封层被放置在半导体管芯和凸块上。 将可穿透的膜包封层压在半导体管芯和凸起上，以将半导体管芯和凸块嵌入第一和第二粘合剂层内。 分离第一粘合剂层和第二粘合剂层以除去基底层和第一粘合剂层，并且将第二粘合剂层留在半导体管芯和凸起周围。 凸起从第二粘合剂层露出。 载体被移除。 在半导体管芯和第二粘合剂层上形成互连结构。 导电层形成在与凸块电连接的第二粘合剂层上。
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