公开(公告)号：US09816201B2

公开(公告)日：2017-11-14

申请号：US14814440

申请日：2015-07-30

Applicant: Scott M. Zimmerman ,  William R. Livesay ,  Richard L. Ross

Inventor： Scott M. Zimmerman ,  William R. Livesay ,  Richard L. Ross

IPC: C30B25/18 ,  C30B25/10 ,  C30B25/06 ,  C30B23/08 ,  C30B23/02 ,  C30B19/12 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  C30B29/42 ,  C30B29/40 ,  C30B29/16 ,  H01L31/0304 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/036 ,  H01L31/0693 ,  H01L31/0687 ,  H01L31/0735 ,  H01L31/074 ,  H01L31/18 ,  H01L33/00 ,  H01L31/0725 ,  C30B25/02 ,  H01L31/054

CPC classification number: C30B25/186 ,  C30B19/12 ,  C30B23/025 ,  C30B23/08 ,  C30B25/02 ,  C30B25/06 ,  C30B25/105 ,  C30B29/06 ,  C30B29/08 ,  C30B29/16 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B29/42 ,  C30B29/52 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/0547 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/074 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0054 ,  H01L33/0062 ,  H01L33/0075 ,  H01L33/0083 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/31678

Abstract: Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

公开(公告)号：US20170301818A1

公开(公告)日：2017-10-19

申请号：US15332727

申请日：2016-10-24

Applicant: Qorvo US, Inc.

Inventor： Kevin Wesley Kobayashi

IPC: H01L31/11 ,  H01L31/18 ,  H01L31/0312 ,  H01L31/0304 ,  H01L27/144 ,  H01L31/028 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/02

CPC classification number: H01L31/1105 ,  H01L27/1443 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/0312 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/184 ,  H01L31/1844

Abstract: Disclosed is an active photonic device having a Darlington configuration with a substrate and a collector layer that is over the substrate. The collector layer includes an inner collector region. An outer collector region substantially surrounds the inner collector region and is spaced apart from the inner collector region. A base layer is over the collector layer. A first outer base region and a second outer base region substantially surround the inner base region and are spaced apart from the inner base region and each other. An emitter layer is over the base layer. The emitter layer includes an inner emitter region that is ring-shaped and resides over and extends substantially around an outer periphery of the inner base region. A first outer emitter region and a second outer emitter region substantially surround the inner emitter region and are spaced apart from the inner emitter region and each other.

公开(公告)号：US20170301817A1

公开(公告)日：2017-10-19

申请号：US15487182

申请日：2017-04-13

Applicant: BRIAN PEARSON ,  JURGEN MICHEL ,  LIONEL KIMERLING

Inventor： BRIAN PEARSON ,  JURGEN MICHEL ,  LIONEL KIMERLING

IPC: H01L31/108 ,  H01L27/144 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L31/1085 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02645 ,  H01L27/1443 ,  H01L31/028 ,  H01L31/1808

Abstract: A germanium metal-semiconductor-metal (MSM) photodetector is fabricated by growing crystalline germanium from an amorphous silicon seed, supported by an amorphous substrate, at a temperature of about 450° C. In this fabrication, crystalline Ge is grown via selective deposition in geometrically confined channels, where amorphous silicon is disposed as the growth seed. Ge growth extends from the growth seed along the channels to a lithographically defined trench. The Ge emerging out of the channels includes crystalline grains that coalesce to fill the trench, forming a Ge strip that can be used as the active area of a photodetector. One or more Schottky contacts can be formed by a thin tunneling layer (e.g., Al2O3) deposited on the Ge strip and metal contracts formed on the tunneling layer.

公开(公告)号：US09728679B2

公开(公告)日：2017-08-08

申请号：US14971046

申请日：2015-12-16

Applicant: ALEDIA ,  Commissariat á L'Energie Atomique et aux Energies Alternatives

Inventor： Nathalie Dechoux ,  Benoit Amstatt ,  Philippe Gilet

IPC: H01L33/24 ,  B82Y40/00 ,  H01L21/02 ,  H01L31/0352 ,  H01L33/00 ,  H01L33/08 ,  H01L33/18 ,  H01L31/0296 ,  H01L31/0304 ,  B82Y20/00 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/18 ,  H01L33/38 ,  H01L33/20 ,  H01L33/32 ,  H01L33/06 ,  H01L33/44 ,  H01L33/28

CPC classification number: H01L33/24 ,  B82Y20/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/03044 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/1828 ,  H01L31/184 ,  H01L33/0054 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0083 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/20 ,  H01L33/28 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025 ,  Y02E10/544 ,  Y02P70/521

Abstract: An optoelectronic device comprises a substrate; pads on a surface of the substrate; semiconductor elements, each element resting on a pad; a portion covering at least the lateral sides of each pad, the portion preventing the growth of the semiconductor elements on the lateral sides; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair. A method of manufacturing an optoelectronic device is also disclosed.

公开(公告)号：US20170125627A1

公开(公告)日：2017-05-04

申请号：US15408012

申请日：2017-01-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/18 ,  G02B6/12 ,  H01L31/103 ,  H01L31/0232 ,  H01L31/028

CPC classification number: H01L31/1872 ,  G02B6/12 ,  G02B6/12004 ,  H01L31/02005 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  H01L31/1864 ,  H01L2223/6627 ,  H01P1/172 ,  H01P3/16 ,  Y02E10/50

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US20170104116A1

公开(公告)日：2017-04-13

申请号：US15377294

申请日：2016-12-13

Applicant: Elenion Technologies, LLC

Inventor： Thomas Wetteland Baehr-Jones ,  Yi Zhang ,  Michael J. Hochberg ,  Ari Novack

IPC: H01L31/0352 ,  H01L31/107 ,  H01L31/18 ,  H01L31/028

CPC classification number: H01L31/0352 ,  H01L27/14638 ,  H01L27/14649 ,  H01L27/14685 ,  H01L27/14698 ,  H01L31/0256 ,  H01L31/028 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1808 ,  Y02E10/547

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz.

公开(公告)号：US09608159B2

公开(公告)日：2017-03-28

申请号：US15205418

申请日：2016-07-08

Applicant: Ashok Chaudhari

Inventor： Ashok Chaudhari

IPC: H01L31/18 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0725 ,  H01L51/42 ,  H01L27/30

CPC classification number: H01L31/1808 ,  H01L27/302 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/0725 ,  H01L51/4213 ,  Y02E10/547 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method of making a germanium perovskite/crystalline germanium thin-film tandem solar cell including the steps of depositing a textured oxide buffer layer on glass, depositing a Sn—Ge film from a eutectic alloy on the buffer layer; and depositing perovskite elements on the Sn—Ge film, thus forming a perovskite layer based on the Ge from the Sn—Ge film, incorporating the Ge into the perovskite layer.

公开(公告)号：US09601530B2

公开(公告)日：2017-03-21

申请号：US14642550

申请日：2015-03-09

Applicant: Michael Marrs

Inventor： Michael Marrs

IPC: H01L27/146 ,  H01L29/423 ,  H01L29/786 ,  H01L31/105 ,  H01L31/0288 ,  H01L31/0224 ,  H01L29/66 ,  H01L31/18 ,  H01L21/02 ,  H01L29/24 ,  H01L29/22

CPC classification number: H01L27/14612 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L27/14661 ,  H01L27/14663 ,  H01L27/14692 ,  H01L29/22 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696 ,  H01L31/022475 ,  H01L31/0288 ,  H01L31/105 ,  H01L31/1808 ,  Y02P70/521

Abstract: Some embodiments include a semiconductor device. The semiconductor device includes a transistor having a gate metal layer, a transistor composite active layer, and one or more contact elements over the transistor composite active layer. The transistor composite active layer includes a first active layer and a second active layer, the first active layer is over the gate metal layer, and the second active layer is over the first active layer. Meanwhile, the semiconductor device also includes one or more semiconductor elements forming a diode over the transistor. The semiconductor element(s) have an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Other embodiments of related systems and methods are also disclosed.

公开(公告)号：US09577136B2

公开(公告)日：2017-02-21

申请号：US15180198

申请日：2016-06-13

Applicant: FUJITSU LIMITED

Inventor： Shigekazu Okumura

IPC: H01L31/105 ,  G02B6/122 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/18 ,  H04J14/02

CPC classification number: H01L31/105 ,  G02B6/1228 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/109 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/1864 ,  H04J14/02

Abstract: The present invention pertains to a semiconductor light-receiving element and a method for manufacturing the same, enabling operation in a wide wavelength bandwidth and achieving fast response and high response efficiency. A PIN type photodiode made by sequentially layering on top of the substrate a Si layer of a first conductivity type, a non-doped Ge layer and a Ge layer of a second conductivity type that is the opposite type of the first conductivity type and a Ge current-blocking mechanism is provided in at least part of the periphery of the PIN type photodiode.

Abstract translation: 本发明涉及一种半导体光接收元件及其制造方法，能够在宽波长带宽内进行工作并实现快速响应和高响应效率。 一种PIN型光电二极管，其通过在衬底的顶部顺序层叠第一导电类型的Si层，与第一导电类型相反的第二导电类型的Ge层和Ge掺杂Ge层， 在PIN型光电二极管的周边的至少一部分中设置电流阻挡机构。

公开(公告)号：US09553222B2

公开(公告)日：2017-01-24

申请号：US15231822

申请日：2016-08-09

Applicant: Coriant Advanced Technology, LLC

Inventor： Thomas Wetteland Baehr-Jones ,  Yi Zhang ,  Michael J. Hochberg ,  Ari Novack

IPC: G01J5/20 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/107 ,  H01L31/18

CPC classification number: H01L31/0352 ,  H01L27/14638 ,  H01L27/14649 ,  H01L27/14685 ,  H01L27/14698 ,  H01L31/0256 ,  H01L31/028 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1808 ,  Y02E10/547

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz.

Abstract translation: 描述了不用金属掺杂或接合锗的Ge-on-Si光电探测器。 尽管制造工艺简单，但器件的响应度为1.24A / W，相当于99.2％的量子效率。 -4V反向偏压下的暗电流为40nA。 3 dB带宽为30 GHz。